运输网络中最小饱和流的求解

运输网络中常常由于流量的不可控易发生堵塞现象.网络发生堵塞时的饱和流值达不到最大流值.最小饱和流是运输网络,尤其是紧急疏散网络设计中很重要的一个参数.通过建立网络的割集矩阵来确定网络的堵塞截面,基于此提出了求解最小饱和流的线性规划模型及算法.举例分析表明,利用该算法计算网络最小饱和流更加简便、更加实用.     

Fusion Proteins Cpn10-E^rns with Properties of Generating CSFV-Neutralized Antibodies

IntroductionClassical swine fever(CSF), included in the listA of the Office International des Epizooties(OIE), is ahighly contagious disease of domestic pigs and is con-sidered as the mostharmful disease occurring in pigs allover the world[1]. Outbreaks o…     

Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films

Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition＇parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of （002） crystal planes of the He-charged Ti film shifts to a lower angle and that of （100） crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.     

中物院远红外自由电子激光实验研究

中国工程物理研究院基于射频直线加速器技术的远红外自由电子激光(FIR-FEL)实验取得阶段性进展,于2005年3月24晚8时30分首次出光, 并多次重复. 中心波长115μm, 谱宽1%.介绍了实验系统的主要组成部分和主要实验结果.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

牛顿弦截法预估校正迭代格式的收敛阶

研究如下形式的牛顿弦截法的预估校正(P.C.)格式:P(预估):~xk+1=xk-(xk-xk-1)f(xk)f(xk)-f(xk-1)C(校正):xk+1=xk-(~xk+1-xk)f(xk)f~(xk+1)-f(xk)证明了它的收敛阶为2.618.     

基于平稳小波变换及奇异值分解的湖底回波分类

提出一种水下目标回波的特征提取方法。该方法根据平稳小波变换的冗余性和奇异值的稳健性,将湖底回波信号的平稳小波变换系数矩阵的奇异值作为特征向量。它本质上是利用平稳小波变换将信号分解到多个子空间,再采用K-L变换实现对子信号的特征压缩。实测数据分析表明,本文方法与子带能量特征法相比: (1)在相同的样本集和类内距条件下,得到的类间距大于后者, (2)不论所选测试样本和训练样本是否属于同次湖试所得,分类正确识别率均高于后者, (3)随样本集的变动,其正确识别率抖动程度远小于后者。因此,该方法能得到更加稳健、有效的特征以及更好的分类效果。     

同位网格上不可压流动的反欠松弛压力修正算法

本文提出了同位网格上的不可压流动压力修正算法,其中压力修正值由压力方程所求得。设计了分离式的动量插值方法,有效地避免了松弛因子对计算结果的影响和不合理压力场的出现。提出了构造压力方程的反欠松弛方法,该方法建立了稳定和加速计算收敛的一般途径。对经典算例的计算得到了满意的结果。     

阵列幅相误差条件下的目标方位估计

本文研究了一种改进的MUSIC法，可在一定阵列幅相误差条件下对多目标实现高分辨方位估计，有效地改善了原算法的参数估计性能，具有稳健性高、适用范围广以及工程实现简单等特点，通过大量的计算机仿真和水池实验表明，该方法具有较好的多目标分辨能力和方位估计精度，工程应用前景良好。     

Difference discrete connection and curvature on cubic lattice Dedicated to Professor Sheng GONG on the occasion of his 75th birthday

In a way similar to the continuous case formally, we define in different but equivalent manners the difference discrete connection and curvature on discrete vector bundle over the regular lattice as base space. We deal with the difference operators as the discrete counterparts of the derivatives based upon the differential calculus on the lattice. One of the definitions can be extended to the case over the random lattice. We also discuss the relation between our approach and the lattice gauge theory and apply to the discrete integrable systems.