函数模拟法求解锥形模超塑挤压的力学场——超塑挤压解析理论之一

本文首次用模拟位移函数的方法,给出锥形模超塑挤压力学场的解析式以及应变、应变速率和应力的约束方程。由于实验选用的是典型超塑性合金ZnAl₅,所以结果有相当的包络性。即使对于非典型超塑性材料,这种方法亦有普遍意义。     

A complete global solution to the pressure gradient equation

We study the domain of existence of a solution to a Riemann problem for the pressure gradient equation in two space dimensions. The Riemann problem is the expansion of a quadrant of gas of constant state into the other three vacuum quadrants. The global existence of a smooth solution was established in Dai and Zhang [Z. Dai, T. Zhang, Existence of a global smooth solution for a degenerate Goursat problem of gas dynamics, Arch. Ration. Mech. Anal. 155 (2000) 277-298] up to the free boundary of vacuum. We prove that the vacuum boundary is the coordinate axes.     

p+209Bi核反应微观数据的理论计算

利用光学模型、激光模型、蒸发模型及扭曲波玻恩近似理论,对入射能量从阈能到300MeV,p+²⁰⁹Bi的中子反应截面、剩余核截面、出射粒子的多重数进行了理论计算及分析,并将计算结果与实验数据进行了比较.同时得到一组能量到50?0MeV与实验数据符合很好的光学势参数.     

北京七色光儿童艺术剧院的声学设计

北京七色光儿童艺术剧院是一个以演出儿童话剧为主，同时还可以进行歌舞、音乐等其他文艺形式的演出的多功能剧场，该剧院形式活泼，音质良好。本文从音质和噪声控制的几个方面对其声学设计进行了介绍。     

BEPC中电子云导致的束团横向尺寸增长研究

多束团正电子储存环中可能发生电子云不稳定性. 由于电子云导致的束团横向尺寸增长已经成为提高对撞机对撞亮度的主要限制因素之一. 介绍了在BEPC储存环中, 利用条纹相机直接测量由于电子云导致的束团横向尺寸增长结果, 并与模拟计算进行了比较.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

数码相机引入科技照像实验

介绍了数码相机的系统结构和工作原理，通过与传统相机的对比分析，在科技照相实验中应该使用数码相机。     

有界连通区域上Dirichlet空间及其算子

本文主要讨论了有界连通区域Dirichlet空间上Toeplitz算子的Fredholm性质,计算了符号在C1中的Toeplitz算子的本性谱和Fredholm指标．     

A TVD Type Wavelet-Galerkin Method for Hamilton-Jacobi Equations

In this paper,we use Daubechies scaling functions as test functions for the Galerkin method,and discuss Wavelet-Galerkin solutions for the Hamilton-Jacobi equations.It can be proved that the schemesare TVD schemes.Numerical tests indicate that the schemes are suitable for the Hamilton-Jacobi equations.Furthermore,they have high-order accuracy in smooth regions and good resolution of singularities.     

An implicit method for linear ill‐posed problems with perturbed operators

An implicit iterative method is applied to solving linear ill‐posed problems with perturbed operators. It is proved that the optimal convergence rate can be obtained after choosing suitable number of iterations. A generalized Morozov's discrepancy principle is proposed for the problems, and then the optimal convergence rate can also be obtained by an a posteriori strategy. The convergence results show that the algorithm is a robust regularization method. Copyright © 2006 John Wiley & Sons, Ltd.