Melting temperature and enthalpy variations of phase change materials (PCMs): a differential scanning calorimetry (DSC) analysis

Differential scanning calorimetry (DSC) analysis is a standard thermal analysis technique used to determine the phase transition temperature, enthalpy, heat of fusion, specific heat and activation energy of phase change materials (PCMs). To determine the appropriate heating rate and sample mass, various DSC measurements were carried out using two kinds of PCMs, namely N-octadecane paraffin and calcium chloride hexahydrate. The variations in phase transition temperature, enthalpy, heat of fusion, specific heat and activation energy were observed within applicable heating rates and sample masses. It was found that the phase transition temperature range increased with increasing heating rate and sample mass; while the heat of fusion varied without any established pattern. The specific heat decreased with the increase of heating rate and sample mass. For accuracy purpose, it is recommended that for PCMs with high thermal conductivity (e.g. hydrated salt) the focus will be on heating rate rather than sample mass.     

二维缺陷GaAs电子结构和光学性质第一性原理研究

采用基于密度泛函理论的第一性原理方法计算了存在Ga空位缺陷和掺杂B原子的二维GaAs的能带结构、态密度和光学性质.计算结果表明空位缺陷二维GaAs显示出金属特性,B原子的引入使体系变为间接带隙半导体,禁带宽度为0.35 eV.态密度计算发现体系低能带主要由Ga的s态、p态、d态和As的s态、p态构成;高能带主要由Ga和As的s态、p态构成.掺杂B原子与存在空位缺陷的二维GaAs相比,静态介电常数相对较低,变为8.42,且易于吸收紫外光,在3.90～8.63 eV能量范围具有金属反射特性,反射率达到52%.     

Motion generation of RCCC mechanism using numerical atlas

This article presents a synthesis method for the motion generation of RCCC mechanism using the numerical atlas. Based on the Fourier series theory, the geometrical model of the rigid body rotation angle of RCCC mechanism is established. Through harmonic analysis, the rotation angle output characteristics were observed to be dependent on the rigid body rotation angle operator. Subsequently, two numerical atlas databases are constructed. The theoretical formulas to calculate the real size and installing dimensions were proposed. On the basis of the theoretical formulas and two numerical atlas databases, the problem of rigid body guided synthesis of RCCC is solved.     

Tens of GHz Tantalum pentoxide‐based micro‐ring all‐optical modulator for Si photonics

A tantalum pentoxide‐based (Ta₂O₅‐based) micro‐ring all‐optical modulator was fabricated. The refractive index inside the micro‐ring cavity was modified using the Kerr effect by injecting a pumped pulse. The transmittance of the ring resonator was controlled to achieve all‐optical modulation at the wavelength of the injected probe. When 12 GHz pulses with a peak power of 1.2 W were coupled in the ring cavity, the transmission spectrum of the Ta₂O₅ resonator was red‐shifted by 0.04 nm because of the Kerr effect. The relationship between the modulation depth and gap of the Ta₂O₅ directional coupler is discussed. An optimized gap of 1100 nm was obtained, and a maximum buildup factor of 11.7 with 84% modulation depth was achieved. The nonlinear refractive index of Ta₂O₅ at 1.55 μm was estimated as 3.4 × 10^?14 cm²/W based on the Kerr effect, which is almost an order of magnitude higher than that of Si₃N₄. All results indicate that Ta₂O₅ has potential for use in nonlinear waveguide applications with modulation speeds as high as tens of GHz.

     

Cu2O/ZnO的形貌可控制备及光催化性能

以CuSO₄和ZnCl₂为原料, 采用温和的液相还原法制备得到Cu₂O/ZnO微米结构高效光催化剂. 研究了不同[Cu²⁺]/[Zn²⁺]比条件下所得Cu₂O/ZnO复合物的形貌和光催化活性. 通过5.5 h的光照, Cu₂O/ZnO光催化剂对甲基橙染料的降解率为(77.5±0.1)%. 将多形貌Cu₂O/ZnO复合物作为阳极, 铂片作为对电极, 中间注入甲基橙溶液, 组装“三明治”结构拟电池, 研究了复合物的光降解机制.     

低阈值单横模852nm半导体激光器

基于波导理论、等效折射率方法,设计并制备了非对称波导隔离双沟结构脊型边发射激光器,最终获得了低闽值单基侧模852 nm激光器.详细研究了不同脊型台深宽比参数设计对激光器侧向模式特性的影响规律,实现了腔面未镀膜情况下脊型波导边发射激光器的单基侧模稳定输出,同时激射波长可以精确调谐到852 nm;工作电流达到150 mA,工作温度30℃;斜率效率最高可达0.89 nW/mA,光谱半宽小于1 nm.研究结果为进一步实现超窄线宽激光器提供了参考和借鉴,并且为实现激光器稳定输出提供了实验基础.     

灰气体加权和辐射模型综合评估及分析

在O_2/CO_2气氛下,参与性介质的非灰气体辐射特性表现出不同于空气气氛下的特性,因此,非灰气体辐射模型的选择和应用在换热过程中将变得十分重要.基于统计窄谱带模型,本文综合评估近年发展应用较广的灰气体加权和(WSGG)模型.结果表明,几种WSGG模型的预测值总体趋势正确,但仍存在着一定的差别.对于发射率,Dorigon等(2013 Int.J.Heat Mass Transfer 64 863)和Bordbar等(2014 Combust.Flame 161 2435)的WSGG模型与基准模型符合较好,相对误差小于20%.与离散坐标法结合,本文求解了PH_2O/PCO_2=1,2时的一维平行平板间辐射换热问题.结果显示,由Dorigon等和Bordbar等的WSGG模型得到的辐射热源和热流密度分布的相对误差均较小(10%左右).Johansson等(2011 Combust.Flame 158893)和Bordbar等的WSGG模型具有更广的适用范围.     

六角星形MoSe_2双层纳米片的制备及其光致发光性能

采用化学气相沉积法,以三氧化钼作为钼源,硒粉作为硒源,在H_2/Ar气氛下生长出硒化钼纳米片.扫描电镜、X射线衍射表征结果表明,MoSe_2产物呈六角星状,横向尺寸约10μm,具有很好的晶体质量和结构.拉曼光谱表征其结构,确定其为双层纳米片.研究表明,高温反应时间对双层纳米片的生长具有重要的影响.通过对双层纳米片的生长机理的探究,推测其经历了3个生长过程:在高温下,Mo源和Se源被气化成气态分子并发生硒化反应形成晶核;晶核呈三角形外延生长;当反应时间持续增加,在空间位阻效应的影响下,晶体以中心原子岛为核,外延耦合生长出第二层三角形,最终形成六角星状双层纳米片.光致发光光谱结果表明,六角星状MoSe_2双层纳米片在1.53 eV处具有直接带隙和1.78 eV处具有间接带隙,其较宽范围的激发光谱响应预测其在光电探测器件领域具有潜在的应用前景.     

低阈值852nm半导体激光器的温度特性

通过金属有机化学气相淀积(MOCVD)和半导体后工艺技术制备了852 nm半导体激光器,它在室温下的阈值电流为57.5 m A,输出的光谱线宽小于1 nm。测试分析了激光器的输出光功率、阈值电流、电压、输出中心波长随温度的变化。测试结果表明,当温度变化范围为293~328 K时,阈值电流的变化速率为0.447m A/K,特征温度T0为142.25 K,输出的光功率变化率为0.63 m W/K。通过计算求得理想因子n为2.11,激光器热阻为77.7 K/W,中心波长漂移速率是0.249 29 nm/K,实验得出的中心波长漂移速率与理论计算结果相符。实验结果表明,该半导体器件在293~303 K的温度范围内,各特性参数能够保持相对良好的状态。器件如果工作在高温环境,需要添加控温设备以保证器件在良好状态下运行。