膨胀的热夸克胶子物质的中等质量双轻子的增强

基于一个描述夸克胶子火柱演化的相对论流体力学模型,研究了夸克相、强子相互作用以及非热过程(DrellYan对、粲强子衰变)的中等质量双轻子的产生.发现由于相边对夸克胶子物质演化的影响和RHIC能量核碰撞产生的夸克胶子物质具有高的初始温度,夸克相对双轻子的贡献显著增强,比那些来自强子相互作用的贡献重要,甚至能与来自非热的贡献比较.表明中等质量双轻子的增强是一个在核碰撞中产生了夸克胶子物质的可能信号. 关键词： 夸克-胶子物质 双轻子增强 相对论流体力学模型     

Tokamak中自举电流的剖面准直性

利用Harris模型,通过求解等离子体平衡方程,计算俘获粒子份额,分别对常规剪切和中心负剪切下tokamak中的自举电流的大小和剖面准直性进行了计算和分析.自举电流分布与等离子体平衡电流分布之间的剖面准直性可以通过调整等离子体的密度、温度和电流分布参数,以及描述等离子体形状的拉长度k和三角变形因子d来获得.中心负剪切位形有利于自举电流产生,并有好的剖面准直性.通过计算比较,分别在常规剪切位形下和中心负剪切位形下获得了一组优化的等离子体参数,在这组参数下,自举电流有较大的份额和好的剖面准直性 关键词： tokamak 自举电流 剖面准直性     

PbWO4晶体空位型缺陷电子结构的研究

采用基于密度泛函理论的相对论性离散变分和嵌入团簇方法计算了PbWO4晶体中与氧空位和铅空位相关缺陷的态密度分布,并运用过渡态方法计算了其激发能.结果表明:PbWO4晶体中WO3+VO缺陷的O2p→W5d跃迁可引起350nm和420nm附近的吸收,并且发现VPb的存在可以使WO42基团的禁带宽度明显变小 关键词： PbWO4晶体 密度泛函 氧空位和铅空位 态密度分布     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

Effect of end groups on complexation kinetics between cyclodextrins and guest polymers

α‐Cyclodextrin (α‐CD) has been complexed with various poly(ethylene glycol) (PEG) derivatives in aqueous solution. It has been found that the end groups of PEG derivatives affect the complexation kinetics greatly, but have only a little influence on the thermodynamic behavior. By increasing the hydrophobicity of end groups, the complexation speeds up rapidly. On the other hand, the bulky end groups slow down the threading of polymeric guests into the cavity of CD. By changing the hydrophobicity and the size of end groups, the complexation rate can be adjusted in the range of several orders of magnitudes, which should be quite useful in the design of new supramolecular systems. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2050–2057, 2006     

无K1,r图中的哈密顿圈（英文）

本文借助对图的本质独立集和图的部分平方图的独立集的研究，对于K1,r图中哈密顿圈的存在性给出了八个充分条件。我们将利用T－插点技术对这八个充分条件给出统一的证明，本文的结果从本质上改进了C－Q.Zhang于1988年利用次形条件给出的k-连通无爪图是哈密顿图的次型充分条件，同时。G.Chen和R.H.Schelp在1995年利用次型条件给出的关于k-连通无K1，4图是哈密顿图的充分条件也被我们的结果改进并推广到无K1,r图。     

Adhesion measurement of thin films by a modified laser spallation technique: theoretical analysis and experimental investigation

Laser driven shocks can lead to a dynamic failure, called film spallation. Here, we use a modified laser spallation set-up to measure the dynamic adhesion of thin films and we propose a novel diagnostic technology. Based on correlation theory, new spallation criteria for characterizing the progressive damage at the interface between the film and the substrate are established, such as interface delamination, film spallation and film expulsion. With the help of the theory, the degree of damage and the dimension of damage (i.e. fracture), such as the minimum width of delamination radius, the thickness of the film etc., are estimated. Experiments are carried out on epoxy/stainless steel and epoxy/Al, and the experimental results show that their dynamic bonding strengths are about 25 MPa and 20 MPa, respectively. The detailed results, analyses and discussions are presented in this paper. Received: 6 February 2001 / Accepted: 3 December 2001 / Published online: 11 February 2002     

Engineering issue study of triple harmonic method for in situ flying height analysis

In situ flying height testing technology is becoming more and more important in slider–disk interaction analysis and manufacturing quality control of disk drives and head-related components. Triple harmonic method is a quite promising choice for in situ flying height analysis, compared with other in situ methods reported up to now. This paper reports results of investigations on engineering issues of applying triple harmonic method for in situ flying height analysis. The paper reports results of analysis on the effects of various testing conditions on flying height testing repeatability and accuracy. Results suggest that working at reasonable high channel density and working on the ratio between third and first harmonics will be an advantage in terms of both flying height testing sensitivity and testing repeatability. Comparing with media thickness effect, the gap-length variation among different heads will be important if it is to study flying height difference among different heads and the testing is at high channel density. Also, it is suggested to work at AC erased track, in order to reduce the non-linearity caused by hard transition.     

新型金属杂冠醚配合物18-MC-6[Mn6(4-Amashz)6(DMF)6]·12DMF的合成

合成了一种新型金属杂冠醚配合物[Mn6(4-amashz)6(DMF)6]·12DMF,并用X射线衍射法对其结构进行了表征.研究了该化合物修饰金电极催化氧还原的性质,结果表明,该化合物具有平面碟状结构,对在碱性溶液中的氧有显著的催化还原作用.     

一种新型偶氮染料在扭曲向列相液晶显示取向中的应用

研究了一种新型偶氮材料sy03在光控取向中的应用。将sy03加入聚酰亚胺SE-3310(Nissan)与N,N-二甲基甲酰胺(DMF)的混合溶液中作为90°扭曲向列相液晶显示(Twisted nematic liquid crystal display,TN-LCD)的光取向材料,测量由它作为取向膜的扭曲向列型盒的电光特性与仅用SE-3310取向的扭曲向列型盒电光特性比较,发现sy03偶氮的加入使得扭曲向列型盒的响应时间短到98 ms、阈值电压也降低到1.7 V左右。而且随曝光时间的增加,响应时间和衬比度都有所提高,电光响应曲线也更为陡峭。加热到150℃后,其电光特性并没有明显变化,证明了它良好的热稳定性。最后通过测量偏振紫外吸收光谱,分析得出液晶分子易取向方向与激发光源偏振方向垂直。