C波段平面异向介质设计及其后向波特性验证

提出了一种工作在C波段的新型平面结构异向介质，它除了带宽宽和损耗小外，还具有体积小、结构简单的优点，而且能够实现工作频段的平移，频率平移范围为4—20 GHz.基于电磁波由自由空间入射半无限大异向介质平板的传输和反射数据，计算出了电波在其中传播时的相速随频率的变化曲线，结果表明所讨论的异向介质确实在预想的频段上表现出后向波特性；同时利用相位观察法进一步验证了上述的后向波特性，从而肯定了异向介质的存在. 关键词： 异向介质 宽频带 小单元 后向波特性     

40Ar+诱导无定形碳到金刚石纳米晶相变的研究

通过60 keV的⁴⁰Ar⁺辐照无定形碳靶合成了大量尺寸不同的金刚石纳米颗粒.高分辨透射电子显微镜配合能量色散X射线谱和电子衍射以及Raman谱分析的结果表明，这些嵌于具有扰动石墨结构薄膜中的纳米金刚石颗粒，其成核率很高(约为10¹³/cm²)，而且可以生长到较大的尺寸，有的甚至可以达到微米量级.对其相转变过程也进行了初步探讨. 关键词： 离子束 金刚石纳米晶 相变 透射电子显微镜     

PRACTICAL STABILITY IN TERMS OF TWO MEASURES FOR DISCRETE SYSTEMS

Practical stability in terms of two measures for difference equations is discussed by using the Lyapunov function and a new comparison theorem.     

有Edgeworth展式的分布的随机加权逼近的重对数律

本文研究了未知分布的逼近问题，利用随机加权法，给出了有Edgeworth展式的一类（未知）分布的模拟分布，证明了在一定条件下，模拟分布与未知分布的逼近精度达到O(n^-1√lnlnn），称之为随机加权逼近的重对数律。     

斜角入射沉积法制备渐变折射率薄膜的折射率分析

斜角入射沉积法是一种制备薄膜的新颖方法,它可以用来制备渐变折射率薄膜.本文首先探讨了膜料的沉积入射角为α,薄膜柱状生长倾斜角为β时的薄膜的填充系数;之后利用drude理论,分析研究了斜角入射沉积法制备渐变折射率薄膜的折射率与薄膜的入射角和生长方向的关系. 关键词： 斜角入射沉积 渐变折射率 填充系数     

Ca+-Pyridine络合物的光解反应

使用反射式飞行时间质谱仪,得到 Ca~ -pyridine 络合物在412～ 690nm 的光解谱.从谱图可见,反应有两个通道,一个是 Ca~ 与 pyridine 分子解离开的非反应淬灭过程,这个通道在所有波段都有,且占优势；生成产物 Ca~ NH_2的通道不仅所占比例小,且在530～590nm 波段关闭. 作为激光波长函数的 Action spectrum 显示出明显的峰,对应于络合物的跃迁.反应的分支比也支持了光解谱图的结论.     

苝二酸酐与嘧啶衍生物的氢键组装

用半经验AM1方法对苝二酸酐与嘧啶衍生物的1:1及1:2氢键复合物进行理论研究,表明随着氢键数目增多,弱相互作用能变大,主体上的供电基和客体上的吸电基有利于氢键相互作用,氢键导致电子从主体流向客体.用INDO/SCI方法计算配合物的电子光谱,表明其长波吸收峰与主体相比发生兰移,各配合物的长波吸收峰位置相差不大,与实验一致.讨论吸收峰兰移的原因并对电子跃迁进行理论指认,同时得到了配合物的双质子转移势能曲线,给出了相对于N-H键的过渡态和活化能.     

Initial study on the structure and photoluminescence properties of SiC films doped with Al

SiC films doped with aluminum (Al) were prepared by the rf-magnetron sputtering technique on p-Si substrates with a composite target of a single crystalline SiC containing several Al pieces on the surface. The as-deposited films were annealed in the temperature range of 400-800 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The results show that the introduction of Al into films hinders crystalline formation process. And with the increase of annealing temperature, more Si particles are formed in the films, which strongly affect the optical absorption properties. The photoluminescence (PL) spectra of the samples show two peaks at 370 nm and 412 nm. The intensities of the PL peaks are evidently improved after Al doped. We attribute the origin of the two PL peaks to a kind of Si-related defect centres. The obtained results are expected to have important applications in modern optoelectronic devices.     

Robust locally testable codes and products of codes

We continue the investigation of locally testable codes, i.e., error‐correcting codes for which membership of a given word in the code can be tested probabilistically by examining it in very few locations. We give two general results on local testability: First, motivated by the recently proposed notion of robust probabilistically checkable proofs, we introduce the notion of robust local testability of codes. We relate this notion to a product of codes introduced by Tanner and show a very simple composition lemma for this notion. Next, we show that codes built by tensor products can be tested robustly and somewhat locally by applying a variant of a test and proof technique introduced by Raz and Safra in the context of testing low‐degree multivariate polynomials (which are a special case of tensor codes). Combining these two results gives us a generic construction of codes of inverse polynomial rate that are testable with poly‐logarithmically many queries. We note that these locally testable tensor codes can be obtained from any linear error correcting code with good distance. Previous results on local testability, albeit much stronger quantitatively, rely heavily on algebraic properties of the underlying codes. © 2006 Wiley Periodicals, Inc. Random Struct. Alg., 2006     

VOn±(n=0,1,2)的势能函数与光谱常数研究

用密度泛函B3LYP/6-311++G(d,p)方法和相对论有效实势(Lanl2dz基组)对VO^n±(n=0,1,2)分子离子的势能函数及光谱常数进行了分析. 结果表明它们都能稳定存在, 其基态电子状态分别是:⁴Σ(VO^2-), ³Σ(VO^-), ⁴Σ(VO), ³Σ(VO⁺)和²Σ(VO²⁺). 其中VO^2-和VO²⁺的势能函数曲线呈“火山口”型, 属于亚稳态分子离子. 用七参数Murell-Sorbie势拟合VO^2-和VO²⁺分子亚稳态双原子分子离子势能函数, 发现其拟合曲线与势能函数曲线符合得很好. 同时,讨论了电荷对势能函数和能级的影响. 关键词： 分子离子 密度泛函理论 势能函数 能级