首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   14689篇
  免费   2636篇
  国内免费   1582篇
化学   10181篇
晶体学   142篇
力学   967篇
综合类   99篇
数学   1886篇
物理学   5632篇
  2024年   25篇
  2023年   316篇
  2022年   378篇
  2021年   564篇
  2020年   625篇
  2019年   548篇
  2018年   511篇
  2017年   458篇
  2016年   675篇
  2015年   710篇
  2014年   816篇
  2013年   1097篇
  2012年   1269篇
  2011年   1348篇
  2010年   925篇
  2009年   872篇
  2008年   933篇
  2007年   862篇
  2006年   773篇
  2005年   641篇
  2004年   481篇
  2003年   400篇
  2002年   367篇
  2001年   324篇
  2000年   266篇
  1999年   305篇
  1998年   283篇
  1997年   216篇
  1996年   237篇
  1995年   233篇
  1994年   199篇
  1993年   170篇
  1992年   143篇
  1991年   156篇
  1990年   162篇
  1989年   115篇
  1988年   97篇
  1987年   84篇
  1986年   63篇
  1985年   63篇
  1984年   30篇
  1983年   34篇
  1982年   26篇
  1981年   23篇
  1980年   13篇
  1979年   10篇
  1978年   8篇
  1977年   10篇
  1974年   7篇
  1973年   9篇
排序方式: 共有10000条查询结果,搜索用时 406 毫秒
41.
Regular Semigroups with Inverse Transversals   总被引:24,自引:0,他引:24  
  相似文献   
42.
本文通过使用化多时滞为单时滞的技巧,研究了一类广泛的非线性泛函微分方程解的振动性,所得结果包含和改进了Hunt,Yorke等多人的结果.  相似文献   
43.
本文介绍一种直接测量散热率新方法.进而测出不良导体的热系数。该方法,减小了由间接测量散热率所带来的误差,实验装置简单,操作方便,参数少,测量结果的精确性和重复性都有较大提高,更重要的是这一新的实验方法突出了物理思想。  相似文献   
44.
Two types of mechanisms are proposed for mound coarsening during unstable epitaxial growth: stochastic, due to deposition noise, and deterministic, due to mass currents driven by surface energy differences. Both yield the relation H=(RWL)2 between the typical mound height W, mound size L, and the film thickness H. An analysis of simulations and experimental data shows that the parameter R saturates to a value which discriminates sharply between stochastic () and deterministic () coarsening. We derive a scaling relation between the coarsening exponent 1/z and the mound-height exponent which, for a saturated mound slope, yields . Received: 11 November 1997 / Revised in final form: 28 November 1997 / Accepted: 28 November 1997  相似文献   
45.
唐西林  刘仲奎 《数学杂志》1997,17(3):397-403
本文利用逆半群上的同余扩张,讨论了一类逆半群的亚直可约性,并刻划了这类逆半群的幂等元集的特征。  相似文献   
46.
It has been found that by the addition of low concentrations of an amphiphilic block copolymer to an epoxy resin, novel disordered morphologies can be formed and preserved through curing. This article will focus on characterizing the influence of the block copolymer and casting solvent on the templated morphology achieved in the thermoset sample. The ultimate goal of this work is to determine the parameters that would control the microphase morphology produced. Epoxy resins blended with a series of amphiphilic block copolymers based on hydrogenated polyisoprene (polyethylene-alt-propylene or PEP) and polyethylene oxide (PEO), specifically, were investigated. In this article, the cure-induced order–order phase transition from the spherical to wormlike micelle morphology will also be discussed. It is proposed that the formation of the wormlike micelle structure from the spherical micelle structure is similar to the phase transition behavior that occurs in dilute block copolymer solutions as a function of the influence of the solvent on micelle morphology. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 3338–3348, 2007  相似文献   
47.
48.
The effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge2Sb2Te5 film. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge2Sb2Te5 film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge2Sb2Te5 film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.  相似文献   
49.
In this paper,we use Daubechies scaling functions as test functions for the Galerkin method,and discuss Wavelet-Galerkin solutions for the Hamilton-Jacobi equations.It can be proved that the schemesare TVD schemes.Numerical tests indicate that the schemes are suitable for the Hamilton-Jacobi equations.Furthermore,they have high-order accuracy in smooth regions and good resolution of singularities.  相似文献   
50.
An implicit iterative method is applied to solving linear ill‐posed problems with perturbed operators. It is proved that the optimal convergence rate can be obtained after choosing suitable number of iterations. A generalized Morozov's discrepancy principle is proposed for the problems, and then the optimal convergence rate can also be obtained by an a posteriori strategy. The convergence results show that the algorithm is a robust regularization method. Copyright © 2006 John Wiley & Sons, Ltd.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号