直流磁控溅射一步法原位制备MgB2超导薄膜

用MgB2靶,控制直流磁控溅射工作在异常辉光放电或弧光放电状态,在SrTiO3衬底上原位一次性得到了MgB2超导薄膜,其起始转变温度为32K,零电阻温度为15K. 关键词： 高温超导体 超导薄膜 磁控溅射 二硼化镁     

纳米MOSFET迁移率解析模型

从玻尔兹曼方程出发，重新计算了纳米MOSFET沟道内的载流子所服从的分布函数，特别是考虑了纳米MOSFET横向电场和纵向电场之间的相互作用，并且以得到的非平衡状态下的分布函数为基础，考虑载流子寿命和速度的统计分布，给出了纳米MOSFET载流子迁移率的解析表达式.通过与数值模拟结果进行比较和分析，该迁移率解析模型形式简洁、物理概念清晰，且具有相当精度. 关键词： 玻尔兹曼方程 纳米MOSFET 迁移率 沟道有效电场     

不连续不可逆二维映象的动力学特性

总结两个保守映象不可逆地分段连续链接(称为类耗散系统)以及一个保守映象与一个耗散映象不可逆地分段连续链接(称为半耗散系统)情况下得到的五项共同动力学特征：不连续边界象集构成的随机网成为唯一的混沌轨道；由于某些相点具有两个逆象而导致的相空间塌缩(类耗散)；由于系统的不连续不可逆性质而出现的胖分形禁区网；在具有吸引子共存时占据不连续边界象集随机网和胖分形禁区网区域的点滴状吸引域以及由此导致的吸引子不可预言性；即使在传统强耗散存在的情况下点滴状吸引域仍由类耗散机制主宰.以一个累积-触发电路为例，说明这五项系统动 关键词： 随机网 禁区网 点滴状吸引域     

Kolmogorov Width of Classes of Smooth Functions on the Sphere

Let ^d−1{(x₁,…,x_d) ^d:x²₁+···+x²_d=1} be the unit sphere of the d-dimensional Euclidean space ^d. For r>0, we denote by B^r_p (1p∞) the class of functions f on ^d−1 representable in the formwhere dσ(y) denotes the usual Lebesgue measure on ^d−1, and P^λ_k(t) is the ultraspherical polynomial.For 1p,q∞, the Kolmogorov N-width of B^r_p in L^q( ^d−1) is given bythe left-most infimum being taken over all N-dimensional subspaces X_N of L^q( ^d−1).The main result in this paper is that for r2(d−1)²,where A_NB_N means that there exists a positive constant C, independent of N, such that C⁻¹A_NB_NCA_N.This extends the well-known Kashin theorem on the asymptotic order of the Kolmogorov widths of the Sobolev class of the periodic functions.     

On the stability of Riemannian manifold with parallel spinors

Inspired by the recent work [HHM03], we prove two stability results for compact Riemannian manifolds with nonzero parallel spinors. Our first result says that Ricci flat metrics which also admit nonzero parallel spinors are stable (in the direction of changes in conformal structures) as the critical points of the total scalar curvature functional. Our second result, which is a local version of the first one, shows that any metric of positive scalar curvature cannot lie too close to a metric with nonzero parallel spinor. We also prove a rigidity result for special holonomy metrics. In the case of SU(m) holonomy, the rigidity result implies that scalar flat deformations of Calabi-Yau metric must be Calabi-Yau. Finally we explore the connection with a positive mass theorem of [D03], which presents another approach to proving these stability and rigidity results. Dedicated to Jeff Cheeger for his sixtieth birthday     

Analysis on Shack–Hartmann wave-front sensor with Fourier optics

In Shack–Hartmann wavefront sensor (SHWS), the behavior of the irradiance pattern produced by the micro-lens array is important for an accurate centroid estimation. In this paper, the behavior of a micro-lens array in SHWS is analyzed using Fourier optics, and reveals that in addition to the main, expected spots, secondary spots with smaller intensities also appeared as a result of diffraction by the small dimensions of the micro-lens and interference from the different micro-lenses. This result is confirmed by comparing with a irradiance pattern taken from an actual SHWS. The additional error in centroid estimation caused by these secondary spots is discussed and relationship to the parameters of the micro-lens of SHWS is analyzed.     

成分和厚度的依赖

通过调整Mn的成分，系统地研究了Ni81Fe19/Ni100-xMnx双层膜的磁学性质，特别是交换偏置场(Hex)的变化.当Ni100-xMnx中Mn的原子百分比在534%到600%之间时，对于150nm的Ni81Fe19，得到了最大的交换偏置场175kA/m，同时由于Mn对Ni81Fe19层的扩散所造成的磁矩的降低小于20%；高角x射线衍射证明Ni100-xMnx的晶格常数随着Mn成分的改变而变化，Mn含量越多，其晶格常数越大；制备态Ni100-xMnx膜晶格常数与θ相NiMn膜晶格常数的接近程度与NiMn膜θ相形成的容易程度相对应.也研究了交换偏置场随着Ni１００-xMnx厚度的变化，第一次得到了当Ni100-xMnx中Mn的原子百分比为706%时，Ni81Fe19(150nm)/Ni100-xMnx(90nm)双层膜在经过240℃，5h退火后，可以有80kA/m的交换偏置场，此时铁磁层磁矩的大小几乎不变. 关键词： Ni81Fe19/Ni100-xMnx 交换偏置场     

多结超导环在外磁场中的行为

分析和计算了双结超导环在无偏置电流时的磁通、环流、自由能与外磁场的关系.发现双结环与单结环在磁场中的行为有所不同.当两个结的Ic相等时，双结环在1＜β=2πLIcΦ0＜2时，若无偏置电流，总磁通Φ、环流I与外磁通Φe的关系仍然是非回滞的曲线.仅当β≥2时，曲线才出现回滞.另外双结环有两支解，并且每支解的周期为2Φ0. 关键词： 双结环 双支解 2Φ0周期 回滞     

Giant Magneto-Impedance of Co50Ni22Ga28 Alloy with High Chemical Ordering

The microstructure of CosoNi22Ga28 ribbon with the L10 structure is examined. The band-like morphology is observed. These bands with the width in a range of 40-200 nm appear along the transverse direction of the ribbon. The giant magnetoimpedance （GMI） effect in this alloy is measured. The results show that Co5oNi22Ga28 exhibits a sharp peak of the GAI effect. The maximum GAH ratio up to 360% is detected. The GMI effect measured versus temperature shows large jumps of the magnetoimpedance amplitude at the reversal martensitic transformation temperature 240℃ and Curie temperature 375℃C respectively. The jump ratios of the magnetoimpedance amplitude examined at these temperatures are about 5 and 10, respectively.     

Classical in-plane negative magnetoresistance and quantum positive magnetoresistance in undoped InSb thin films on GaAs (1 0 0) substrates

Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ₀13 meV, the electron effective mass of m^*0.10m₀ seven times of the band edge mass in bulk InSb and the effective g-factor of |g^*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory.