Infinitely Many Solutions of Nonlocal Kirchhoff-Type Equations via Perturbation Methods

Mathematical Notes - We study the multiplicity of weak solutions to the boundary-value problem $$\begin{alignedat}{2} - M\biggl(\iint_{\mathbb R^{2N}}|u(x)-u(y)|^2 K(x-y)\,d x\,d y\biggr)\mathscr...     

Structural verification of a tetrahydrotetrazole compound

Tetrahydrotetrazoles are five‐membered‐ring heterocycles containing four contiguous saturated nitrogen atoms. Very few examples of such compounds have been reported in the literature. Our previous attempt at the synthesis of a member of this class of compound suggested that the N—N bonds may be more labile than expected. This finding raised the question as to whether the structures of any of the previously reported tetrahydrotetrazoles had been properly assigned. We have reproduced the synthesis of a reported tetrahydrotetrazole, namely 1,2‐di‐tert‐butyl 3‐phenyl‐1H,2H,3H,10bH‐[1,2,3,4]tetrazolo[5,1‐a]isoquinoline‐1,2‐dicarboxylate, C₂₅H₃₀N₄O₄, and have now confidently confirmed its structure via X‐ray crystallography. However, while sufficiently stable in the crystal phase, we discovered that it remains very labile in solution (having a half‐life of only 15 min at 20 °C in CDCl₃). A tentative reaction pathway for its dissociation based on ¹H NMR spectral evidence is provided.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Structure of Zinc Nanotubes

Crystallography Reports - The formation of Zn-based nanotubes by electrochemical synthesis in pores of template polymer matrices is considered. It is established that the number of defects in the...     

Nanostructured Crystals of Fluorite Phases Sr1 – xRxF2 + x (R Are Rare-Earth Elements) and Their Ordering. 13: Crystal Structure of SrF2 and Concentration Dependence of the Defect Structure of Nonstoichiometric Phase Sr1 – xLaxF2 + x As Grown (x = 0.11, 0.20, 0.32, 0.37, 0.47)

Crystallography Reports - The defect structure of as-grown SrF2 and nonstoichiometric phases Sr1 – xLaxF2 + x (x = 0.11, 0.20, 0.32, 0.37, 0.47) single...     

Formation and Characterization of Concentration Inhomogeneities in Melt-Grown Crystals

Crystallography Reports - The specific features of the formation of concentration inhomogeneities in crystals grown by the Czochralski method (GaSb:Te, Ge:Ga) and by the Bridgman method...     

Broadening and Shift of the D1 and D2 Lines of Rb Atoms by Neon: Resolving Hyperfine Components in a Half-Wave Cell Using Double Differentiation with Respect to Frequency

Optics and Spectroscopy - A cell with a submicron thickness was used to measure the broadening and shift of the D1 and D2 lines of Rb atoms by neon. The resolution of hypefine components...     

Unbounded Solutions to Systems of Differential Equations at Resonance

Journal of Dynamics and Differential Equations - We deal with a weakly coupled system of ODEs of the type $$\begin{aligned} x_j'' + n_j^2 \,x_j + h_j(x_1,\ldots ,x_d) = p_j(t), \qquad...     

A tight Hermite–Hadamard inequality and a generic method for comparison between residuals of inequalities with convex functions

Periodica Mathematica Hungarica - We present a tight parametrical Hermite–Hadamard type inequality with probability measure, which yields a considerably closer upper bound for the mean value...     

On the Distributivity and Modularity Properties of the Lattice of Fitting Classes

Mathematical Notes - It is proved that the lattice of all Fitting classes of finite groups is not distributive, and conditions under which Fitting classes satisfy the distributive and modular laws...