运用MATLAB程序演示点电荷系的等势面

用MATLAB程序演示了点电荷系所激发电场的等势面，并且讨论了电荷对称分布情况下，点电荷系的等势面及电场分布的特点．     

Deposition of TiN Films by Novel Filter Cathodic Arc Technique

A straight magnetic filtering arc source is used to deposit thin films of titanium nitride. The properties of the films depend strongly on the deposition process. TiN films can be deposited directly onto heated substrates in a nitrogen atmosphere or onto unbiased substrates by condensing the Ti^＋ ion beam in about 300 eV N2^＋ nitrogen ion bombardment. In the latter case, the film stoichiometry is varied from an N：Ti ratio of 0.6-1.1 by controlling the arrival rates of Ti and nitrogen ions. Meanwhile, simple models are used to describe the evolution of compressive stress as function of the arrival ratio and the composition of the ion-assisted TiN films.     

High power AlGaInP laser diodes with zinc-diffused window mirror structure

The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/A1GaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.     

在可逆循环热温比之和为零的推导中存在的问题及解决方法

关于任一可逆循环热温比之和为零的推导，许多教材上的阐述存在着不够准确和过于简单的问题，本文提出一种比较严格的推导方法。     

Preparation and Microstructure of Tantalum Nitride Thin Film by Cathodic Arc Deposition

Tantalum nitride （TAN） thin films are achieved on Si（111） and SS317L substrates by cathodic vacuum arc technique, which is rarely reported in the literature. The crystal structure, composition and surface morphology of the films are characterized by x-ray diffraction （XRD）, x-ray photoelectron spectroscopy （XPS）, auger electron spectroscopy, and atomic force microscopy, respectively. The influence of substrate negative bias on crystal structure, composition, surface morphology of the TaN films is systematically studied. At the substrate bias of 0 V and -50 V, the amorphous TaN film is obtained. As the bias increases to -100 V, cubic TaN phase can be found. Stoichiometric TaN with hexagonal lattice preferred （300） orientation is prepared at a bias of -200 V. Combine the XRD and XPS results, the binding energy value of 23.6eV of Ta 4f（7/2） is contributed to hexagonal TaN. Compared to other techniques, TaN thin films fabricated by cathodic vacuum arc at various substrate biases show different microstructures.     

有限群的中心化子指数

假定有限群A互索地作用在G上,设日≤G且x=ηG,其中x∈Irr(G),η∈Irr(H)都是A-不变的,设fA(G)=|GCG(A)|.I.M.Isaacs和G.Navarro曾猜想fA(G)≤fA(H)s,其中s是某一常数.本文证明了若G是奇阶的且可诱导的,那么存在一个标准三元组(G,R,A)满足fA(G)≤fA(R)β,其中3.24＜β＜3.25.若(G,H,A)是一个标准三元组,且不等式fA(G)≤fA(H)β对任意素阶群A都成立,其中β是一个常数,那么这一不等式对所有可解群A都成立.     

反转座因子Foxy在棉花枯萎病菌中的存在

本实验以新疆、河南分离的棉花枯萎病菌异核体菌株及其不同表型分离子菌株为材料,采用PCR法,检测到所有供试菌株均存在可转座因子Foxy.经测序分析表明,它们之间的同源性在96%.每个Foxy片段虽不编码基因,但都存在RNA聚合酶Ⅲ结合位点的两个保守区,BoxA和BoxB,并具有EcoRI酶切位点,符合反转座因子的特征,是一种短散布序列.     

人类白细胞抗原基因HLA-B*58∶01基因型的快速低成本鉴别方法

采用焦磷酸测序技术和改进的全血基因组提取方法,建立了位于6号染色体的银屑病易感基因1候选基因1(Psoriasis susceptibility 1 candidate 1,PSORS1C1)rs9263726位点的焦磷酸测序方法,检出限达到0.4 ng/μL基因组DNA,20例标本的焦磷酸法和Sanger法测序结果完全一致.利用本方法对683例标本的rs9263726位点进行测序,得到中国人群该位点野生型(GG型)分布频率为87.6％,突变的GA型分布频率为11.7％、AA型分布频率为0.7％.通过对随机选取的46例标本rs9263726位点与人类白细胞抗原基因HLA-B* 58∶01基因型的连锁关系进行分析,结果表明,该位点预测HLA-B* 58∶01基因型的灵敏度为100％、特异性为91.3％.本方法可用于HLA-B* 58∶01基因型的检测.     

细长三角翼前缘和后缘涡层的卷起及其相互作用研究

本文目的在于建立一个简单的二维理论模型,试图在电子计算机上数值地模拟出Hummel关于三角翼前缘涡和后缘涡层的卷起及其相互作用的实验结果。实验表明,在有前缘涡存在情况下,在后缘下游,后缘涡层也要卷起另外一个涡,而且前缘卷起的涡与后缘卷起的涡环量方向相反,所得计算结果与实验图象甚为相似。