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Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation. 相似文献
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P.A. Sinclair 《Discrete Mathematics》2004,286(3):177-184
Let G be a connected graph with minimum degree at least 3. We prove that there exists an even circuit C in G such that G−E(C) is either connected or contains precisely two components one of which is isomorphic to a 1-bond. We further prove sufficient conditions for there to exist an even circuit C in a 2-connected simple graph G such that G−E(C) is 2-connected. As a consequence of this, we obtain sufficient conditions for there to exist an even circuit C in a 2-connected graph G for which G−E(C) is 2-connected. 相似文献
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Philip Sinclair 《Discrete Mathematics》2004,286(3):171-175
Let G be a 2-connected graph with minimum degree at least 3. We prove that there exists an even circuit C in G with factorization F={F1,F2} such that G−E(F1) is 2-connected. 相似文献
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We calculate the loss induced in a single-mode rectangular optical waveguide by the presence of a second waveguide, perpendicular to the first, which crosses over the first waveguide at a variable distance d. Our calculation is applied to the analysis of several doped silica waveguides of practical importance for optical circuit design. 相似文献
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P.A. Postigo A.R. Alija L.J. Martínez M.L. Dotor D. Golmayo J. Snchez-Dehesa C. Seassal P. Viktorovitch M. Galli A. Politi M. Patrini L.C. Andreani 《Photonics and Nanostructures》2007,5(2-3):79-85
Two-dimensional photonic crystal lasers have been fabricated on III–V semiconductor slabs. Tuning of the spontaneous emission in micro and nanocavities has been achieved by accurate control of the slab thickness. Different structures, some of them of new application to photonic crystal lasers, have been fabricated like the Suzuki-phase or the coupled-cavity ring-like resonators. Laser emission has been obtained by pulsed optical pumping. Optical characterization of the lasing modes have been performed showing one or more laser peaks centred around 1.55 μm. Far field characterization of the emission pattern has been realized showing different patterns depending on the geometrical shape of the structures. These kinds of devices may be used as efficient nanolaser sources for optical communications or optical sensors. 相似文献
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Michael Höft Jochen Weinzierl Rolf Judaschke 《International Journal of Infrared and Millimeter Waves》2002,23(7):1127-1146
Holography is a promising technique for power combining applications in the frequency range of short millimeter and submillimeter waves. In this paper, quasi-optical holographic power combining circuits are investigated. An equivalent network is utilized which rigorously models horn arrays and biperiodic dielectric structures in order to design computer-generated holograms. We apply the network model to a 5-element quasi-optical power combiner and demonstrate its capability. The hologram is designed for 150 GHz and has an efficiency of 92.5 % with a 90 % bandwidth of 5.3 %. With the aid of a broadband waveguide power divider and a vector field measurement system, the circuit is analyzed. 相似文献