Diffusion reaction of oxygen in HfO2/SiO2/Si stacks

We study the oxidation mechanism of silicon in the presence of a thin HfO2 layer. We performed a set of annealing in 18O2 atmosphere on HfO2/SiO2/Si stacks observing the 18O distribution in the SiO2 layer with time-of-flight secondary ion mass spectrometry (ToF-SIMS). The 18O distribution in HfO2/SiO2/Si stacks upon 18O2 annealing suggests that what is responsible for SiO2 growth is the molecular O2, whereas no contribution is found of the atomic oxygen to the oxidation. By studying the dependence of the oxidation velocity from oxygen partial pressure and annealing temperature, we demonstrate that the rate-determining step of the oxidation is the oxygen exchange at the HfO2/SiO2 interface. When moisture is chemisorbed in HfO2 films, the oxidation of the underlying silicon substrate becomes extremely fast and its kinetics can be described as a wet silicon oxidation process. The silicon oxidation during O2 annealing of the atomic layer deposited HfO2/Si is fast in its early stage due to chemisorbed moisture and becomes slow after the first 10 s.     

Adsorption of silanes bearing nitrogenated Lewis bases on SiO2/Si (100) model surfaces

The present paper describes the one-pot procedure for the formation of self-assembled thin films of two silanes on the model oxidized silicon wafer, SiO2/Si. SiO2/Si is a model system for other surfaces, such as glass, quartz, aerosol, and silica gel. MALDI-TOF MS with and without a matrix, XPS, and AFM have confirmed the formation of self-assembled thin films of both 3-imidazolylpropyltrimethoxysilane (3-IPTS) and 4-(N-propyltriethoxysilane-imino)pyridine (4-PTSIP) on the SiO2/Si surface after 30 min. Longer adsorption times lead to the deposition of nonreacted 3-IPTS precursors and the formation of agglomerates on the 3-IPTS monolayer. The formation of 4-PTSIP self-assembled layers on SiO2/Si is also demonstrated. The present results for the flat SiO2/Si surface can lead to a better understanding of the formation of a stationary phase for affinity chromatography as well as transition-metal-supported catalysts on silica and their relationship with surface roughness and ordering. The 3-IPTS and 4-PTSIP modified SiO2/Si wafers can also be envisaged as possible built-on-silicon thin-layer chromatography (TLC) extraction devices for metal determination or N-heterocycle analytes, such as histidine and histamine, with "on-spot" MALDI-TOF MS detection.     

喹哪啶酸合铕/二氧化硅发光材料的溶胶-凝胶法合成与性能

通过红外光谱、紫外可见光谱、荧光光谱和X射线粉末衍射等测试手段,对溶液中合成的喹哪啶酸合铕(Eu-qina)配合物进行了表征,且将溶胶-凝胶法合成出的Eu-qina/SiO2杂化发光材料,与溶液中合成的配合物Eu-qina进行对比.结果表明,配合物Eu-qina中由于喹哪啶酸能有效地将能量传递给Eu3+离子,使Eu3+发出较强的红色特征荧光,而杂化材料Eu-qina/SiO2因SiO2的加入使荧光强度增大.当Eu-qina配合物的掺杂量达到一定值时,Eu-qina/SiO2发较强的红光,并由晶态的Eu-qina转化为非晶态的Eu-qina/SiO2.     

Electric field control and analyte transport in Si/SiO2 fluidic nanochannels

This article presents an analysis of the electric field distribution and current transport in fluidic nanochannels fabricated by etching of a silicon chip. The channels were overcoated by a SiO2 layer. The analysis accounts for the current leaks across the SiO2 layer into the channel walls. Suitable voltage biasing of the Si substrate allows eliminating of the leaks or using them to modify the potential distribution of the fluid. Shaping the potential in the fluid can be utilized for solute focusing and separations in fluidic nanochannels.     

荧光素掺杂的溶胶凝胶SiO2/甲基硅油复合薄膜的制备和光谱特性

采用溶胶-凝胶(Sol-Gel)法制备了掺杂荧光素(FL)的SiO₂/甲基硅油(MSO)复合薄膜,并且测定了这种薄膜的光谱特性.实验表明,荧光素掺杂的SiO₂薄膜在350nm~450nm波长范围内激发,在520nm附近有最强的荧光发射峰;与常规SiO₂膜相比较,SiO₂/甲基硅油(MSO)复合薄膜的荧光发射强度可增加50%;在70℃下的加速老化实验表明,常规SiO₂薄膜20天后开始出现严重的荧光猝灭现象,而复合膜放置一个月后荧光强度仅下降了15%.     

甲基三乙氧基硅烷修饰的Ti3+/SiO2复合薄膜的发光性能

采用溶胶-凝胶(Sol-Gel)法, 以正硅酸乙酯(TEOS)和甲基三乙氧基硅烷(MTES)为先驱物, 盐酸为催化剂, 用二步水解法制备了Ti3+/SiO2薄膜和甲基三乙氧基硅烷修饰的Ti3+/SiO2复合薄膜. 采用红外光谱仪、X射线衍射仪、椭偏仪、荧光光谱仪等对膜层性质进行了分析. 结果表明, 掺杂Ti3+的SiO2薄膜分别在250 nm附近有一弱的激发峰, 294 nm附近有一强的激发峰, 在393 nm附近出现一强的发射峰. IR光谱发现, MTES修饰的Ti3+/SiO2复合薄膜的Si—OH的吸收峰强度比Ti3+/SiO2薄膜的略减小, Si—O—Si的吸收峰明显增强, 表明复合薄膜硅氧网络结构更规则, 有利于Ti3+的均匀分散. Ti3+/SiO2薄膜与复合薄膜的孔隙率分别为13.64%和6.66%, 表明MTES的加入使薄膜更致密. 在空气中陈放30 d后, Ti3+/SiO2薄膜已经检测不到荧光发射峰, 而MTES修饰的Ti3+/SiO2复合薄膜荧光强度只下降了18%. 在氮气中陈放30 d后, 普通薄膜与复合薄膜的荧光强度均仅下降了10%. 表明Ti3+的荧光猝灭的主要原因是由于Ti3+被氧化造成的. 溶胶中加入MTES后, 薄膜表面结构得到改善, 有效地防止了Ti3+的氧化, 荧光强度更稳定.     

Density Functional Theory Study on the Structural and Electronic Properties of Ge（SiO_2）_n Clusters

The geometry,stability,binding energy and electronic properties of(SiO2)n and Ge(SiO2)n clusters(n = 7) have been investigated by Density functional theory(DFT).The results show that the lowest energy structures of Ge(SiO2)n are obtained by adding one Ge on the end site of the O atom or the Si near end site of the O atom in(SiO2)n.The chemical activation of Ge-(SiO2)n is improved compared with(SiO2)n.The calculated second-order difference of energies and fragmentation energies show that the Ge(SiO2)n clusters with n = 2 or 5 are stable.     

Mg-SiO_2体系制备Mg_2Si/AZ91D复合材料的研究

采用原位合成技术制备了Mg2Si/AZ91D复合材料,并通过光学显微镜(OM)、扫描电镜(SEM)、能谱仪(EDS)和X射线衍射仪(XRD)等对添加碱土、稀土元素的影响进行了研究。结果表明:AZ91D镁合金中加入SiO2(其中Si占合金质量的3%)后,出现多边形状或树枝晶状的初生Mg2Si相,以及汉字状的共晶Mg2Si相,树枝晶状Mg2Si的平均尺寸约25~50μm,汉字状Mg2Si的平均尺寸约12~15μm;Mg2Si对镁合金中的β-Mg17Al12相有细化作用。添加Ca,Sr,Y对Mg2Si形貌、尺寸有明显的改善,当添加0.9%Ca,0.1%Sr,0.5%RE(80%Y)变质处理后,Mg2Si形貌全部变为多边形状,平均尺寸约0.8~5μm。     

Synthesis and assembly of SiO2-coated Bi2S3 nanofibers

The SiO2 coating of Bi2S3 nanofibers using the alkaline hydrolysis of Si(OEt)4 is reported. A comparative study on the optical and morphological properties of the starting Bi2S3 nanofibers and the final SiO2 coated nanomaterials are presented and discussed. A SiO2 cap covering homogeneously single Bi2S3 nanofibers was obtained when the hydrolysis of Si(OEt)4 was performed under sonication treatment to maintain the fibers well separated during the coating process. These coated nanofibers were then used in a layer-by-layer deposition process to produce multilayered nanostructured films.     

In situ coating of flame-made TiO2 particles with nanothin SiO2 films

Rutile TiO2 particles made by flame spray pyrolysis (FSP) were coated in a single step with SiO2 layers in an enclosed flame reactor. This in situ particle coating was accomplished by a hollow ring delivering hexamethyldisiloxane (HMDSO) vapor (precursor to SiO2) through multiple jets in swirl cross-flow to Al-doped nanostructured rutile TiO2 aerosol freshly made by FSP of a solution of titanium tetraisopropoxide and aluminum sec-butoxide in xylene. The as-prepared powders were characterized by (scanning) transmission electron microscopy (STEM and TEM), energy dispersive X-ray analysis, X-ray diffraction, nitrogen adsorption, electrophoretic mobility, DC plasma optical emission (DCP-OES), and Fourier transform infrared (FT-IR) spectroscopy. The coating quality was assessed further by the photocatalytic oxidation of isopropyl alcohol to acetone. The effect of HMDSO injection point and vapor concentration on product particle morphology was investigated. The titania particles were uniformly SiO2-coated with controlled and uniform thickness at a production rate of about 30 g h(-1) and exhibited limited, if any, photoactivity. In contrast, spraying and combusting equivalent mixtures of the above Si/Al/Ti precursors in the above reactor (without delivering HMDSO through the hollow ring) resulted in particles segregated in amorphous (SiO2) and crystalline (TiO2) domains which exhibited high photocatalytic activity.     

耐环境性SiO2/SiO2-TiO2 增透膜的设计与制备

根据膜层设计理论设计出以K9玻璃为基体的耐环境性的双层增透膜, 这种增透膜在特定波长处具有超高的透过率. 以盐酸为催化剂, 分别以正硅酸乙酯和钛酸丁酯为前驱体制备了SiO2和TiO2溶胶, 将SiO2和TiO2溶胶按一定比例混合得到SiO2-TiO2复合溶胶. 通过改变复合溶胶中SiO2的含量调节复合膜的折射率, 通过改变提拉速度控制薄膜的厚度. 实验结果表明, 双层增透膜在550 nm处的透过率达到99.9%. 增透膜经较强机械摩擦后峰值透过率基本保持不变, 表明该增透膜具有优良的耐摩擦性. 进一步采用六甲基二硅氮烷对增透膜表面进行修饰, 修饰后增透膜的接触角增大至98.3°, 增透膜的疏水性及环境稳定性得到较大提高.     

Direct formation of micro-/nanocrystalline 2,5-dimethyl-N,N'-dicyanoquinonediimine complexes on SiO2/Si substrates and multiprobe measurement of conduction properties

Multiprobe measurements were performed on tiny single crystals of DMe-DCNQI complexes prepared directly on SiO2/Si substrates. The differences in conduction properties between the micro- and nanocrystals and bulk crystals were observed.     

C(膜)/Si(SiO2 )(纳米微粒)/C(膜)热处理的形态及结构分析

用直流辉光溅射+真空镀膜法制备了一种新型结构的硅基纳米发光材料- C(膜)/Si(SiO2)(纳米微粒)/C(膜)夹层膜,并对其进行了退火处理.用TEM、 SEM、 XRD和XPS对其进行了形态结构分析.TEM观察表明: Si(SiO2)纳米微粒基本呈球形,粒径在30 nm左右.SEM观察表明: 夹层膜样品总厚度约为50 μm,膜表面比较平整、致密.400℃退火后,样品表面变得凹凸不平,出现孔状结构; 650℃退火后,样品表面最平整、致密且颗粒均匀.XRD分析表明:制备出的夹层膜主要由SiO2和Si组成,在C原子的还原作用和氧气的氧化作用的共同作用下, SiO2和Si的含量随加热温度的升高而呈现交替变化: 400℃时, C的还原作用占主导地位, SiO2几乎全部被还原成了Si,此时Si含量最高; 400～650℃时,氧化作用占主导地位, Si又被氧化成SiO2, Si含量降低, SiO2含量逐渐上升,在650℃达到最高.XPS分析表明: 在加热过程中, C原子逐渐扩散进入Si(SiO2)微粒层,在650℃与Si反应生成了新的SiC.     

聚酰亚胺／SiO_2杂化材料的硅核磁共振波谱和电光性质的研究

以含氟的二胺5,5’-(六氟异丙基)-二-(2-氨基苯酚)(6FHP)及二酐4, 4’-(六氟异丙基)-苯二酸酐(6FDA)或均苯四甲酸酐(PMDA)为单体,以分散红 1(DR1)为活性生色分子合成具有非线性光学特性的含氟聚酰亚胺,并采用溶胶-凝胶(Sol-Gel)法合成相应的聚酰亚胺／SiO2杂化材料．采用固态29 Si MAS NMR谱研究了含氟聚酰亚胺／SiO2杂化材料的交联结构,结果表明杂化材料中是以T3、Q3、Q4结构为主,说明在杂化材料中形成了交联网状结构．采用衰减全反射(ATR)测定了聚酰亚胺和杂化材料在832 nm处的电光系数,其值分别为 32、28、34和29 pm／V,结果表明具有较高的电光系数．     

Ni2P/SiO2 和Ni/SiO2 催化剂甘油氢解反应性能比较:催化剂活性及产物选择性影响因素的探讨（英文）

采用浸渍法及程序升温还原法制备了Ni2P/SiO2和Ni/SiO2催化剂,利用N2吸附-脱附、X射线衍射、X射线荧光、CO化学吸附、氢气程序升温脱附及氨气程序升温脱附等手段对催化剂进行了表征并用于甘油氢解反应.结果表明,Ni2P/SiO2和Ni/SiO2具有相近的表面Ni密度,但前者表面酸中心和表面氢物种(包括吸附氢和溢流氢)密度明显更高,且在甘油氢解反应中的活性也更高,这与其酸性中心与金属中心之间的协同作用有关.Ni2P/SiO2催化剂上主要产物为1,2-丙二醇及1-丙醇,而Ni/SiO2催化剂上主要产物为1,2-丙二醇、乙二醇和乙醇.提高反应温度和H2压力不能促进Ni2P/SiO2上乙醇和乙二醇的生成,但促进了1,2-丙二醇进一步氢解转化为1-丙醇.由此可见,Ni2P/SiO2具有较强的C-O键断裂活性及较弱的C-C键断裂活性,这可能分别与其较多酸性中心和电子及几何结构性质密切相关.     

Anisotropic polymerization of a long-chain diacetylene derivative Langmuir-Blodgett film on a step-bunched SiO2/Si surface

Alternating facet/terrace nanostructures were fabricated on a SiO2 surface by step-bunching and thermal oxidation of a vicinal Si(111) substrate, and their influence upon the polymerization direction of a long-chain diacetylene derivative monolayer film was investigated by angle-dependent polarized near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. It was found that the peak intensity of the C 1s-pi transition was stronger when the electric vector plane of the incident X-ray was parallel to the direction of the periodic facet/terrace structures rather than perpendicular to them. On the contrary, a polymer film fabricated on a flat SiO2 surface showed no in-plane anisotropy of the peak intensity. These results indicate that the diacetylene groups in the diacetylene derivative monolayer are preferentially photopolymerized in the direction not across but along the periodic one-dimensional structures on the step-bunched and thermally oxidized SiO2/Si(111) surface.     

X-ray photoelectron spectroscopic analysis of Si nanoclusters in SiO2 matrix

We investigated silicon nanoclusters Si(nc) in a SiO2 matrix prepared by the plasma-enhanced chemical vapor deposition technique, using X-ray photoelectron spectroscopy (XPS) with external voltage stimuli in both static and pulsed modes. This method enables us to induce an additional charging shift of 0.8 eV between the Si2p peaks of the oxide and the underlying silicon, both in static and time-resolved modes, for a silicon sample containing a 6 nm oxide layer. In the case of the sample containing silicon nanoclusters, both Si2p peaks of Si(nc) and host SiO2 undergo a charging shift that is 1 order of magnitude larger (>15 eV), with no measurable difference between them (i.e., no differential charging between the silicon nanoclusters and the oxide matrix could be detected). By use of a measured Auger parameter, we estimate the relaxation energy of the Si(nc) in the SiO2 matrix as -0.4 eV, which yields a -0.6 eV shift in the binding energy of the Si(nc) with respect to that of bulk Si in the opposite direction of the expected quantum size effect. This must be related to the residual differential charging between the silicon nanoclusters and the oxide host. Therefore, differential charging is still the biggest obstacle for extracting size-dependent binding energy shifts with XPS when one uses the oxide peak as the reference.     

NiO-MoO3/SiO2光催化剂的结构与光吸收性能

采用表面改性法制备了负载型复合半导体NiO-MoO3/SiO2, 用程序升温还原、 X射线衍射、 拉曼光谱、 透射电镜、 比表面积测定和紫外-可见光漫反射光谱技术对固体材料的组成结构和光吸收性能进行了表征. 结果表明, NiO-MoO3/SiO2的平均粒径约为10 nm, 在载体表面存在xNiO·MoO3复合氧化物的微晶, NiO和MoO3在固体材料表面产生相互修饰作用. NiO的加入有助于提高MoO3在载体SiO2表面的分散程度, 抑制MoOx的聚合, 减小微晶尺寸, 而且可以增强固体材料的光吸收性能, 提高复合半导体对光能的利用率.     

Surface oxidation states in Si/SiO2 nanostructures prepared from Si/SiO2 mixtures

Silica nanospheres have been produced by a novel technique where surface Si oxidation states can be adjusted using the ratio of metalloid ions/metalloid atoms in the starting mixture. When the proportions of Si4+/Si0 are equal in the synthesis, the resulting solid is considerably more reactive than Cab-O-Sil toward the phenol hydroxylation reaction and the surface shows an average Si oxidation state of +3. On the other hand, those silica nanospheres, produced from a mixture of Si4+/Si0 = 0.25, showed a lower reactivity comparable to that of Cab-O-Sil which XPS demonstrates has a surprisingly low average Si oxidation state close to +1. We speculate that the silicon surface oxidation state and the number of surface silanol groups play important roles in determining the activity of the solid toward the phenol hydroxylation reaction. In expanding our earlier report4 on the copper-silica system, we establish that the surface chemistry of the silica nanospheres is apparently different from that of fumed, amorphous silica. These results suggest that we are developing a technique that can be generalized to create supported, mixed metal oxides having tunable average surface oxidation states.     

TiO2/SiO2气凝胶微球的制备及其表征

以TiOSO4和硅溶胶为原料, 加入甲酰胺作为干燥控制化学添加剂, 采用W/O乳状液中的溶胶-凝胶法制备TiO2/SiO2凝胶微球, 通过正硅酸乙酯母液浸泡、溶剂交换、陈化和常压干燥技术制备TiO2/SiO2气凝胶微球, 采用光学显微镜、SEM、TEM和BET比表面及孔分布测定等手段对所得样品进行表征. 典型的气凝胶微球样品是由粒径15 nm左右, 粒度分布相当均匀的球状纳米粒子构成的轻质纳米多孔材料, 表观密度为177 kg•m-3, 比表面积372 m2•g-1, 平均孔径22.78 nm, 孔隙率高达92.0％, 微球的宏观粒径为50 m. 依据制备条件的变化, TiO2/SiO2气凝胶微球的宏观粒径可控在10～200 m之间, 表观密度为150～300 kg•m-3, 比表面积为300～400 m2•g-1, 平均孔径在18.71～22.78 nm之间变化.