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Surface oxidation states in Si/SiO2 nanostructures prepared from Si/SiO2 mixtures
Authors:Gole James L  Shinall Brian D  Iretskii Alexei V  White Mark G  Erickson Ann S
Institution:School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA. jame.gole@physics.gatech.edu
Abstract:Silica nanospheres have been produced by a novel technique where surface Si oxidation states can be adjusted using the ratio of metalloid ions/metalloid atoms in the starting mixture. When the proportions of Si4+/Si0 are equal in the synthesis, the resulting solid is considerably more reactive than Cab-O-Sil toward the phenol hydroxylation reaction and the surface shows an average Si oxidation state of +3. On the other hand, those silica nanospheres, produced from a mixture of Si4+/Si0 = 0.25, showed a lower reactivity comparable to that of Cab-O-Sil which XPS demonstrates has a surprisingly low average Si oxidation state close to +1. We speculate that the silicon surface oxidation state and the number of surface silanol groups play important roles in determining the activity of the solid toward the phenol hydroxylation reaction. In expanding our earlier report4 on the copper-silica system, we establish that the surface chemistry of the silica nanospheres is apparently different from that of fumed, amorphous silica. These results suggest that we are developing a technique that can be generalized to create supported, mixed metal oxides having tunable average surface oxidation states.
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