ZnO纳米线形态对其光致发光性能的影响

以多孔氧化铝膜为模板,电化学沉积出Zn纳米线,再通过高温氧化得到ZnO纳米线阵列。通过改变制备多孔氧化铝模板的工艺参数来改变模板纳米孔径,进而改变ZnO纳米线的直径,得到不同形态的ZnO纳米线阵列。应用X射线衍射仪、透射电子显微镜测试技术表征了ZnO纳米线的结构与形貌。结果发现,X射线衍射时会出现随ZnO纳米线直径增大衍射峰增多和增强的现象。采用荧光光谱仪测试样品的光致发光性能,通过Gaussian原理对谱峰的拟合分析了ZnO纳米线形态对其光致发光光谱的影响。结果表明,随着纳米线直径从30nm至60nm依次增大,其结晶性和化学计量比逐渐变好。近紫外区和蓝光区的发射峰随着纳米线直径的增大而蓝移,而纳米线直径为60nm的样品则出现随直径增大而红移的现象。结果可见,直径在55~60nm间的某点将是ZnO纳米线的结构和光致发光性能变化的临界点。     

氧化铝模板中Ag纳米线阵列的选择性生长

利用Ag离子与Br离子之间的化学沉积作用在孔隙中充满明胶的阳极氧化铝(AAO)模板中制备了AgBr/AAO纳米介孔复合材料.材料选择性曝光后,利用原位显影液对其进行化学显影,在AAO模板中选择性得到Ag纳米线阵列.实验结果表明:Ag纳米线是连续的、致密的,且具有多晶结构,充满了曝光部分的模板孔隙.本文还对影响Ag纳米线选择性生长的因素进行了简单讨论.     

DNA Assisted Assembly of Multisegmented Nanowires

This work demonstrates a highly specific and selective assembly of multisegmented nanowires on prepatterned gold electrodes using DNA hybridization. Multisegmented Au/Pd/Au nanowires were synthesized using template‐directed electrodeposition. Two complementary single‐stranded DNAs modified with thiol tags adsorb on gold electrodes and gold segments of nanowires, and enable the nanowires to assemble across electrodes. The assembled nanowires show ohmic contact with minimum contact resistance. Using these nanowires, the temperature dependent electrical resistance and the sensing performance toward hydrogen were investigated. The temperature coefficient of resistance of nanowires was lower than bulk polycrystalline counterpart, because of higher electron scattering at the surface and grain boundaries of nanowires. The nanowires were sensitive toward hydrogen gas at room temperature with a detection limit of 0.5%.     

以DNA为模板构造苯胺-DNA复合物纳米线和聚苯胺纳米导线

在溶液中, 以DNA为模板构造出了线性的苯胺-DNA复合物纳米线. 用压缩气流将得到的复合物纳米线拉直并固定到云母基底上. 用原子力显微镜(AFM)可观察到形貌规整的苯胺-DNA复合物纳米线. 苯胺单体在溶液中能从各个方向上组装到DNA分子上, 从而使DNA模板分子的表面包裹了一层苯胺. 以苯胺-DNA复合物纳米线为前驱体通过进一步化学氧化聚合得到了以DNA为模板的聚苯胺纳米导线.     

Ag核Au壳双金属复合纳米线的制备及其表面增强拉曼光谱研究

采用氧化铝模板结合交流电沉积技术制备纯银纳米线, 然后通过化学还原方法, 并控制加入的金盐的量, 在已制备好的银线表面包裹不同厚度的金壳层, 得到具有核壳结构的Ag_核Au_壳复合纳米线. 采用电子显微镜(SEM, TEM)和表面增强拉曼光谱对该复合结构纳米线进行相关表征, 纳米线的表面形貌与加入的金盐的量有关. 以苯硫酚(TP)和对巯基苯胺(PATP)为探针分子, 研究了此类复合纳米线的表面增强拉曼散射效应. 并以PATP在金银纳米线表面吸附的表面增强拉曼光谱的差别为探针, 表征了复合纳米线表面金的包裹程度, 结果表明一定厚度的包裹程度可制备无针孔效应的核壳结构金银复合纳米线.     

不同孪晶界密度银纳米线拉伸形变行为的分子动力学模拟

采用分子动力学方法模拟了不同孪晶界密度银纳米线的拉伸形变行为,分析了孪晶界密度对多晶银纳米线屈服强度、弹性模量和塑性变形机理的影响.在弹性形变区域,孪晶界的存在对杨氏模量变化的作用不明显.在塑性形变阶段,首先从表面边缘开始产生位错成核,然后延伸并受阻于孪晶界.在进一步拉伸载荷作用下,孪晶界将作为位错源产生新的位错.模拟结果表明,银纳米线的强度与孪晶界和晶粒的尺寸有关.孪晶界密度较小(即晶粒的长径比大于1)时,此纳米线的屈服应力比单晶纳米线还要小,只有当孪晶界密度较大时(即晶粒的长径比小于1),孪晶界使得纳米线得到强化.综合分析了孪晶界和晶粒尺寸对银纳米线的影响,为构建高强度金属纳米线打下基础.最后讨论了温度和拉伸速度对孪晶纳米线屈服应力所产生的影响,随着温度的升高,孪晶纳米线与单晶纳米线的屈服应力差先升高后趋于稳定;当拉伸速度逐渐增大,孪晶纳米线与单晶纳米线的屈服应力差先稳定后增大.     

High-quality ultralong Bi2S3 nanowires: structure, growth, and properties

A simple one-step hydrothermal method for large-scale synthesis of ultralong single-crystalline Bi2S3 nanowires was reported, and the nanowires were comprehensively characterized. The diameters of the nanowires are about 60 nm, and their lengths range from tens of microns to several millimeters. The structure of the nanowires was determined to be of the orthorhombic phase, the growth direction was along [001], and the growth mechanism was investigated based on extensive high-resolution transmission electron microscopy observations. Optical absorption experiments revealed that the Bi2S3 nanowires are narrow-band semiconductors with a band gap E(g) approximately 1.33 eV. Electrical transport measurements on individual nanowires gave a resistivity of about 1.2 ohms cm and an emission current of 3.5 microA at a bias field of 35 V/microm. This current corresponds to a current density of about 10(5) A/cm2, which makes the Bi2S3 nanowire a potential candidate for applications in field-emission electronic devices.     

Catalytic synthesis and photoluminescence of gallium nitride nanowires

Single crystalline wurzite GaN nanowires were successfully synthesized on the NiO catalyzed alumina substrate through a simple thermal chemical vapor deposition method. The mixture of Ga and GaN powder was used as the source material of Ga for synthesizing GaN nanowires. The diameter of nanowires ranged 50–60 nm and the length was about hundreds of micrometers. The nanowires were single crystal with hexagonal wurzite structure. The peaks of Raman spectra of GaN nanowires appeared broadened and asymmetric compared with those of bulk GaN. PL spectra under excitation at 325 nm showed a strong emission at 3.315 eV from near band-edge transition and a broad weak emission at 2.695 eV related to deep level defects.     

Magnetic nanowires via template electrodeposition

The magnetic NiFe_x nanowires were prepared via template-guided electrodeposition. Anodized nanoporous aluminum was used as a template. The pore density and dimensions of alumina templates can be controlled by anodization conditions. Magnetic nanorods (or nanowires) with various aspect ratios were prepared by controlling the electrodeposition time. SEM and TEM micrographs revealed the wire and rod shape morphologies with 50 nm in diameter and 1.5 ~ 10 μm in length. Elemental analysis and ESCA studies suggested that NiFe₃ magnetic alloy was formed. The X-ray diffraction pattern indicates that all the nanowires are stabilized in a BCC structure with a [1 1 0] texture oriented along the long axis of the nanowires. The magnetic measurement showed no hysteresis loops for the whole aspect ratios of the nanowires. Nevertheless, the magnetization is more temperature sensitive for nanowires with lower aspect ratio. This is caused by the fact that the easy magnetization axis is always parallel to the long axis of the nanowires.     

利用表面修饰调制GaAs纳米线的电子结构

采用第一性原理的密度泛函方法,研究了利用表面修饰来调制GaAs纳米线的电子结构.在计算中考虑了几种不同的表面钝化材料(H、F、Cl、Br和I)对GaAs纳米线电子结构的影响.计算结果表明,不同的原子修饰GaAs纳米线时对其能带结构的调制主要取决于它们对纳米线表面态的饱和能力.表面修饰不仅可以调节GaAs纳米线的能隙大小,而且也可以调制其能隙类型.GaAs纳米线的电子结构由表面效应和量子限制效应共同来决定.使用不同材料修饰表面的GaAs纳米线的能隙随直径的变化幅度并不相同.表面修饰为实现同种直径和同种结构的GaAs纳米线的能带工程提供了一种新的途径.     

模板法合成金银核壳纳米线及电化学表征

采用氧化铝模板由交流电沉积制备纯银纳米线.然后借助化学还原法,在已制备好的银线表面包裹不同厚度的金壳层,得到具有核壳结构的AgcoreAushell复合纳米线.电子显微镜(SEM,TEM)显示该复合结构纳米线表面形貌与加入的金盐量有关,而且包裹层较薄的复合纳米线表面存在大量的孔洞.循环伏安测试表明,具有孔洞效应的复合纳米线经多次循环扫描后即可过渡到无孔洞效应的表面.以对巯基苯胺(PATP)作为探针分子的表面增强拉曼光谱,可用于表征纳米材料的表面结构.     

Au nanowire fabrication from sequenced histidine-rich peptide

A new biological approach to fabricate Au nanowires was examined by using sequenced histidine-rich peptide nanowires as templates. The sequenced histidine-rich peptide molecules were assembled as nanowires, and the biological recognition of the sequenced peptide toward Au lead to efficient Au coating on the nanowires. Monodisperse Au nanocrystals were uniformly coated on the histidine peptide nanowires with the high-density coverage, and the crystalline phases of the Au nanocrystals were observed as (111) and (220). The uniformity of the Au coating on the nanowires without contamination of precipitated Au aggregates is advantageous for the fabrication of electronics and sensor devices when the nanowires are used as the building blocks. We believe this simple metal nanowire fabrication method can be applied to various metals and semiconductors with peptides whose sequences are known to mineralize specific ions.     

Optical and field emission properties of thin single-crystalline GaN nanowires

Thin high-quality gallium nitride (GaN) nanowires were synthesized by a catalytic chemical vapor deposition method. The synthesized GaN nanowires with hexagonal single-crystalline structure had thin diameters of 10-50 nm and lengths of tens of micrometers. The thin GaN nanowires revealed UV bands at 3.481 and 3.285 eV in low-temperature PL measurements due to the recombination of donor-bound excitons and donor-acceptor pairs, respectively. The blue shifts of UV bands in the low-temperature PL measurement were observed, indicating quantum confinement effects in the thin GaN nanowires which have smaller diameters than the exciton Bohr radius, 11 nm. For field emission properties of GaN nanowires, the turn-on field of GaN nanowires was 8.5 V/microm and the current density was about 0.2 mA/cm(2) at 17.5 V/microm, which is sufficient for the applications of field emission displays and vacuum microelectronic devices. Moreover, the GaN nanowires indicated stronger emission stability compared with carbon nanotubes.     

不同孪晶界密度银纳米线拉伸形变行为的分子动力学模拟

采用分子动力学方法模拟了不同孪晶界密度银纳米线的拉伸形变行为, 分析了孪晶界密度对多晶银纳米线屈服强度、弹性模量和塑性变形机理的影响. 在弹性形变区域, 孪晶界的存在对杨氏模量变化的作用不明显. 在塑性形变阶段, 首先从表面边缘开始产生位错成核, 然后延伸并受阻于孪晶界. 在进一步拉伸载荷作用下, 孪晶界将作为位错源产生新的位错. 模拟结果表明, 银纳米线的强度与孪晶界和晶粒的尺寸有关. 孪晶界密度较小(即晶粒的长径比大于1)时, 此纳米线的屈服应力比单晶纳米线还要小, 只有当孪晶界密度较大时(即晶粒的长径比小于1), 孪晶界使得纳米线得到强化. 综合分析了孪晶界和晶粒尺寸对银纳米线的影响, 为构建高强度金属纳米线打下基础. 最后讨论了温度和拉伸速度对孪晶纳米线屈服应力所产生的影响, 随着温度的升高, 孪晶纳米线与单晶纳米线的屈服应力差先升高后趋于稳定; 当拉伸速度逐渐增大, 孪晶纳米线与单晶纳米线的屈服应力差先稳定后增大.     

利用表面修饰调制GaAs纳米线的电子结构

采用第一性原理的密度泛函方法,研究了利用表面修饰来调制GaAs纳米线的电子结构. 在计算中考虑了几种不同的表面钝化材料（H、F、Cl、Br 和I）对GaAs纳米线电子结构的影响. 计算结果表明,不同的原子修饰GaAs 纳米线时对其能带结构的调制主要取决于它们对纳米线表面态的饱和能力. 表面修饰不仅可以调节GaAs纳米线的能隙大小,而且也可以调制其能隙类型. GaAs纳米线的电子结构由表面效应和量子限制效应共同来决定. 使用不同材料修饰表面的GaAs纳米线的能隙随直径的变化幅度并不相同. 表面修饰为实现同种直径和同种结构的GaAs纳米线的能带工程提供了一种新的途径.     

Gold-catalyzed low-temperature growth of cadmium oxide nanowires by vapor transport

Ultralong cadmium oxide nanowires were synthesized in high yield on gold-coated silicon substrates by using a vapor transport process. Cadmium vapor generated by the carbothermal reduction of CdO powder in a tube furnace heated to 500 degrees C was carried to the substrate zone by an argon flow with a trace amount of oxygen. The CdO nanowires grew via a vapor-liquid-solid growth mechanism. The diameters of the nanowires are approximately 40-80 nm, and can reach lengths of 30-50 mum. Because the nanowire formation was gold particle catalyzed, patterned nanowire growth on substrates can be achieved. These nanowires grew along the [111] direction and have slightly rough surfaces due to the presence of crystalline CdO shells formed via a physical vapor deposition process. Interesting CdO nanowires with a necklace-like morphology were also observed in a small region of the substrate, where the oxygen supply may be ample to facilitate the lateral growth of rhombohedron-shaped crystals over the straight wires. Electron diffraction and high-resolution TEM results suggest that these side crystals should grow epitaxially on the wire surfaces. The band gap of the CdO nanowires with smoother surfaces was determined to be approximately 2.53 eV. These nanowires exhibit a relatively weak emission band centered at approximately 550 nm.     

ZnO-聚苯胺同轴纳米线及其列阵的制备和表征

以阳极氧化铝膜 (AAO)作模板 ,制备聚苯胺 (PANI)纳米管和PANI纳米管列阵 ;同时利用溶胶_凝胶法制备ZnO_PANI同轴纳米线和同轴纳米线列阵 .PANI纳米管和ZnO_PANI同轴纳米线的形貌通过透射电子显微镜表征 .PANI纳米管的外径约 3 0nm ,内径约 1 0nm ;ZnO_PANI同轴纳米线直径约 60nm .实验发现 ,较之ZnO纳米线 ,同轴AAO模板中纳米线列阵的可见光发射谱带兰移 ,强度显著增强 ,这可能和PANI链上的NH基团与表面Zn2 +离子之间的相互作用有关 ,以及由于ZnO纳米微粒在PANI上富集、PANI的光生载流子部分转移给ZnO微粒所致 .实验还发现分散在NaOH溶液中的同轴纳米线 ,其可见光发射谱带比AAO模板中同轴纳米线的谱带兰移更甚     

Disproportionation of thermoelectric bismuth telluride nanowires as a result of the annealing process

P-type thermoelectric bismuth telluride nanowires were fabricated by pulsed electrodeposition in anodic aluminium oxide (AAO) membranes. Subsequently, the nanowires were annealed at 423, 523 and 673 K in an inert atmosphere for 4 h. With increasing temperature, it was observed that the Te compound incongruently sublimates due to its high vapor pressure, leading to disproportionation (from Bi(2)Te(3) to Bi(4)Te(3)via Bi(4)Te(5)). The crystalline structure of the nanowires was then investigated using XRD and SAED, with nanowire compositions investigated using an EDX attached to a TEM. The crystallinity of the nanowires was found to be enhanced with increased annealing temperature, and nanowires annealed at 673 K were stably maintained in the Bi(4)Te(3) phase. Additionally, the Seebeck coefficient was determined and the thermopower of nanowires annealed at a temperature of 423 K was shown to be slightly enhanced. Significantly suppressed Seebeck values for annealing temperatures of 523 K and 673 K were also observed.     

Polymorph-tuned synthesis of α- and β-Bi2O3 nanowires and determination of their growth direction from polarized Raman single nanowire microscopy

We report polymorph-tuned synthesis of α- and β-Bi(2)O(3) nanowires and their single nanowire micro-Raman study. The single crystalline Bi(2)O(3) nanowires in different phases (α and β) were selectively synthesized by adjusting the heating temperature of Bi precursor in a vapor transport process. No catalyst was employed. Furthermore, at an identical precursor evaporation temperature, α- and β- phase Bi(2)O(3) nanowires were simultaneously synthesized along the temperature gradient at a substrate. The growth direction of α-Bi(2)O(3) nanowires was revealed by polarized Raman single nanowire spectra. For thin β-Bi(2)O(3) nanowires with a very small diameter, the polarized Raman single nanowire spectrum was strongly influenced by the shape effect.     

Synthesis and Photoluminescence of Amorphous Silicon Oxycarbide Nanowires

Synthesis of amorphous SiCO nanowires was carried out by means of direct current arc discharge. Free-standing SiCO nanowires were deposited on the surface of a graphite crucible without any catalyst and template. The SiCO nanowires were analyzed by XRD, SEM, TEM, XPS, and FTIR. The SiCO nanowires were typically 20—100 μm in length and 10—100 nm in diameter as measured by SEM and TEM. The XPS and FTIR spectroscopy analysis confirmed that the Si atoms share bonds with O and C atoms in mixed SiCO units. The PL spectrum of the SiCO nanowires showed strong and stable white emissions at 454 and 540 nm. A plasma-assisted vapor-solid growth mechanism is proposed to be responsible for the formation of the SiCO nanowires.