Preparation and properties of ternary ZnMgO nanowires

Zn0.84Mg0.16O and Zn0.12Mg0.88O nanowires with different morphology have been synthesized by a catalyst-free thermal evaporation method using Zn and Mg metals as the raw materials. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), and room-temperature photoluminescence (PL) measurements were used to determine the structure and optical properties of the obtained products. The obtained nanowires have diameters in a range of 30 nm-80 nm, crystallized well as hexagonal and cubic phase, with preferred orientation along the c-axis and a-axis for the two samples of Zn0.84Mg0.16O and Zn0.12Mg0.88O, respectively. Room-temperature PL at wavelengths of 384.4 and 495.8 nm has been observed for the sample of Zn0.84Mg0.16O. Upon annealing in Ar ambient, the emission peaks in PL spectra show a clearly blue shift.     

Sol-gel template synthesis and photoluminescence of n- and p-type semiconductor oxide nanowires.

A sol-gel template technique has been put forward to synthesize single-crystalline semiconductor oxide nanowires, such as n-type SnO2 and p-type NiO. Scanning electron microscopy and transmission electron microscopy observations show that the oxide nanowires are single-crystal with average diameters in the range of 100-300 nm and lengths of over 10 microm. Photoluminescence (PL) spectra show a PL emission peak at 401 nm for n-type semiconductor SnO2, and a PL emission at 407 nm for p-type semiconductor NiO nanowires, respectively. Correspondingly, the observed violet-light emission at room temperature is attributed to near-band-edge emission for SnO2 nanowires and the 3d(7)4s-->3d8 transition of Ni2+ for NiO nanowires.     

Bi3.25La0.75Ti3O12纳米线的可见光催化性能

研究了用一步水热法制备的掺镧钛酸铋(Bi_3.25La_0.75Ti₃O₁₂, BLT)纳米线的光学和可见光催化性能, 并对其晶体结构和微观结构用X射线衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)等手段进行了表征. 结果表明, 制备的纳米线为纯相的Bi_3.25La_0.75Ti₃O₁₂, 平均直径约为25 nm. 室温光致发光谱(PL)显示BLT纳米线在433和565 nm附近有较强的发射峰, 分别对应激子发射和表面缺陷发光. 紫外-可见漫反射光谱(UV-Vis DRS)表明BLT样品的带隙能约为2.07 eV. 利用可见光(λ>420 nm)照射下的甲基橙降解实验评价了BLT样品的光催化性能. 结果表明, BLT的光催化活性比商用TiO₂催化剂P25、掺氮TiO₂和纯相钛酸铋(Bi₄Ti₃O₁₂, BIT)高得多. BLT光催化剂具有更高催化活性的原因是La³⁺离子掺杂拓展了BIT对可见光的吸收范围, 同时抑制了BIT的光生电子-空穴的复合.     

Synthesis, characterization, and photoluminescence property of LaCO3OH microspheres

Novel LaCO3OH microspheres with the hexagonal phase were synthesized by a hydrothermal method using La(NO3)(3).6H2O and urea CO(NH2)2 as the starting materials. Various experimental parameters were examined, such as the reaction temperature, the reaction time, and the molar ratios of the starting reagents. The as-synthesized products were characterized by powder X-ray diffraction, transmission electron microscopy, field-emission scanning electron microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and photoluminescence (PL). The PL result showed one broad emission band centered at 438 nm (lambdaex=365 nm) of the pure LaCO3OH microspheres. In addition, a possible formation mechanism of LaCO3OH microspheres and the PL property of pure LaCO3OH microspheres were discussed.     

Synthesis and characterization of ZnO nanowires by thermal oxidation of Zn thin films at various temperatures

In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and photoluminescence (PL) measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002), and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. SEM results indicate that by increasing the oxidation temperature, the dimensions of the ZnO nanowires increase. The optimum temperature for synthesizing high density, ZnO nanowires was determined to be 600 °C. EDX results revealed that only Zn and O are present in the samples, indicating a pure ZnO composition. The PL spectra of as-synthesized nanowires exhibited a strong UV emission and a relatively weak green emission.     

In2O3八面体的碳还原法制备及其发光性能研究

In₂O₃ octahedrons were synthesized by carbothermal reduction using In₂O₃ nanoparticles as the source material. The as-synthesized products were characterized by X-ray powder diffraction (XRD), energy dispersive X-ray(EDX), scanning electron microscopy(SEM), transmission electron microscopy(TEM), high-resolution transmission electron microscopy (HRTEM), selected-area electron diffraction analysis(SAED) and Room-temperature photoluminescence(PL) spectroscopy. The results show that the products are single-crystalline In₂O₃ octahedrons, the length of the octahedrons is in the range of 400～3 000 nm; the PL patterns display two peaks located at 447nm and 555 nm upon excitation at 380 nm, and the other two peaks located at 444 nm and 550 nm upon excitation at 325 nm; the excitation pattern shows two peaks located at 274 nm and 371 nm, respectively. The growth mechanism of the In₂O₃ octahedrons is discussed, and the high supersaturation ratio is considered as the key factor.     

ZnO纳米线阵列的电沉积法制备及表征(英文)

利用直流电沉积方法在多孔氧化铝模板的孔洞中生成锌纳米线,在氧气氛围中,于800°C下氧化2h,将氧化铝中的锌氧化成氧化锌.本研究利用氧气氛围进行锌的氧化,大大提高了传统方法的氧化锌纳米线的制备效率.用场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)和X射线衍射仪(XRD)对其形貌及成分进行表征和分析,结果表明,氧化铝模板的有序孔洞中填充了大尺寸、均匀连续的多晶态氧化锌纳米线.纳米线具有约1000:1的高纵横比,其长度等于氧化铝模板的厚度,直径约为80nm.光致发光(PL)光谱表明,氧化锌纳米线在504nm处有由于氧空位引起的较强蓝绿光发射.这为进一步研究ZnO/AAO组装体发学性质和开发新型功能器件提供了基础.     

Ultralong cadmium hydroxide nanowires: synthesis, characterization, and transformation into CdO nanostrands

Ultralong Cd(OH)2 nanowires were fabricated by a hydrothermal method from Cd(CH3COO)2 x H2O (0.01 mol/L) and C6H12N4 (0.015 mol/L) aqueous solution at 95 degrees C for 16 h without using any templates and were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and high-resolution transmission electron microscopy (HRTEM). The length of the nanowires reached several micrometers, giving an aspect ratio of a few thousands. The formation mechanism of the nanowires is attributed to the oriented attachment of small particles. The growth method for the 1D nanostructure presented here offers an excellent tool for the design of other advanced materials with anisotropic properties. The Cd(OH)2 nanowires efficiently captured negatively charged dye, and the adsorbed dye molecules can be released after the addition of EDTA. The Cd(OH)2 nanowires as template compounds were further transformed into CdO semiconductor nanomaterials with similar morphology by calcination under 350 degrees C in air for 3 h.     

Bluish-white emission from radical carbonyl impurities in amorphous Al(2)O(3) prepared via the Pechini-type sol-gel process

Many efforts have been devoted to exploring novel luminescent materials that do not contain expensive or toxic elements, or do not need mercury vapor plasma as the excitation source. In this paper, amorphous Al2O3 powder samples were prepared via the Pechini-type sol-gel process. The resulting samples were characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, field emission scanning electron microscopy (FESEM), photoluminescence (PL) excitation and emission spectra, kinetic decay, and electron paramagnetic resonance (EPR). The obtained amorphous Al2O3 powder samples annealed at 500 and 600 degrees C exhibit bright bluish-white emission centered at 430 and 407 nm, respectively. The luminescent mechanisms of the amorphous Al2O3 powder samples can be ascribed to the carbon-related impurities such as radical carbonyl species. The calculated band structure of the defective amorphous Al2O3 agrees well with the results of spectral analysis and the proposed luminescent mechanism.     

A simple large-scale synthesis of very long aligned silica nanowires

A simple method based on the thermal oxidation of Si wafers has been discovered to provide a large-scale synthesis of very long, aligned silica nanowires. The as-grown product was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and photoluminescence. The obtained SiO₂ nanowires had no metal contaminations, ultralong lengths of millimeters, and most diameters of ∼50 nm. The PL spectra of the SiO₂ nanowires showed a strong and stable green emission at 540 nm. The nucleation and growth of the SiO₂ nanowires were investigated.     

利用牛血清蛋白合成CdS纳米棒和网状纳米线

采用简单易控、对环境友好的矿化方法, 利用牛血清蛋白(BSA)做模板, 通过Cd2+与硫代乙酰胺(TAA)反应制备了形貌均一的CdS纳米棒和网状纳米线. 分别采用透射电子显微镜(TEM)、X射线能谱(EDS)、X射线衍射(XRD)、荧光(PL)发射谱和导电原子力显微镜(C-AFM)等方法对不同实验温度下制备的CdS样品的结构形貌、成分组成和光学性质及微区电子传输行为进行了表征. 结果表明: 在实验反应温度为20 ℃时, 得到的产物为单分散性好的CdS 纳米棒, 长度为250 nm, 直径为30 nm; 在50 ℃时, 得到网状CdS纳米线, 其长度为2-3 μm; CdS纳米棒和网状纳米线均为立方相闪锌矿结构. 荧光性质的测试表明, CdS纳米棒和网状纳米线具有优良的荧光性能, 电流-电压(I-V)特性的表征表明CdS纳米线具有很好的电导特性.     

N2流量对GaN的形貌及光学和电学性能的影响

采用化学气相沉积法(CVD)在Si(100)衬底上以Ni为催化剂,金属Ga和NH3为原料合成了GaN微纳米结构,并研究了N2流量对产物GaN的形貌及光学和电学性能的影响。利用场发射扫描电子显微镜(SEM)、透射电镜(TEM)、X射线衍射仪(XRD)、Xray能谱仪(EDS)、光致发光谱(PL)和霍尔效应测试仪(HMS-3000)等测试手段对样品的形貌、结构、成分、光学和电学性能进行了分析。结果表明,随着N2流量的增加,产物GaN的形貌发生了由微米棒到蠕虫状线再到光滑纳米线的转变;生成的GaN均为六方纤锌矿结构;样品均表现出383 nm的近带边紫外发射峰和470 nm左右的蓝光发射峰;所有样品均为p型;并对产物GaN的形貌转变机理进行了分析。     

N2流量对GaN的形貌及光学和电学性能的影响

采用化学气相沉积法(CVD)在Si(100)衬底上以Ni为催化剂, 金属Ga和NH₃为原料合成了GaN微纳米结构, 并研究了N₂流量对产物GaN的形貌及光学和电学性能的影响。利用场发射扫描电子显微镜(SEM)、透射电镜(TEM)、X射线衍射仪(XRD)、X-ray能谱仪(EDS)、光致发光谱(PL)和霍尔效应测试仪(HMS-3000)等测试手段对样品的形貌、结构、成分、光学和电学性能进行了分析。结果表明, 随着N₂流量的增加, 产物GaN的形貌发生了由微米棒到蠕虫状线再到光滑纳米线的转变;生成的GaN均为六方纤锌矿结构;样品均表现出383 nm的近带边紫外发射峰和470 nm左右的蓝光发射峰;所有样品均为n型;并对产物GaN的形貌转变机理进行了分析。     

Electrospinning synthesis and luminescence properties of one-dimensional La(9.33)(SiO4)6O2: Ln3+ (Ln = Ce, Eu, Tb) microfibers

One-dimensional La(9.33)(SiO(4))(6)O(2): Ln(3+) (Ln = Ce, Eu, Tb) microfibers were fabricated by a simple and cost-effective electrospinning method. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL) and low voltage cathodoluminescence (CL) as well as kinetic decay were used to characterize the resulting samples. SEM and TEM results indicated that the diameter of the microfibers annealed at 1000 °C for 3 h was 200-245 nm. The microfibers were further composed of fine and closely linked nanoparticles. La(9.33)(SiO(4))(6)O(2): Ln(3+) (Ln = Ce, Eu, Tb) phosphors showed the characteristic emission of Ce(3+) (5d → 4f), Eu(3+) ((5)D(0)→(7)F(J)) and Tb(3+) ((5)D(3,4)→(7)F(J)) under ultraviolet excitation and low-voltage electron beams (3-5 kV) excitation. An energy transfer from Ce(3+) to Tb(3+) was observed in the La(9.33)(SiO(4))(6)O(2): Ce(3+), Tb(3+) phosphor under ultraviolet excitation and low-voltage electron beam excitation. Luminescence mechanisms were proposed to explain the observed phenomena. Blue, red and green emission can be realized in La(9.33)(SiO(4))(6)O(2): Ln(3+) (Ln = Ce, Eu, Tb) microfibers by changing the doping ions. So the La(9.33)(SiO(4))(6)O(2): Ln(3+) (Ln = Ce, Eu, Tb) phosphors have potential applications in full-color field emission displays.     

ZnxCd1-xS纳米线的可控合成及其可调的光学性质

采用简单的气相沉积法,合成了不同组成的Zn_xCd_1-xS (0< x <1)纳米线. 利用扫描电子显微镜、透射电子显微镜和电子能谱研究了所制得的纳米线的表面形貌和组成. 该方法以Au为催化剂,简单控制起始物质的相对用量和沉积温度,可以获得可控的Zn/Cd 比例. X射线衍射结果表明所制得的Zn_xCd_1-xS纳米线具有纤维锌矿的单晶结构. 根据制得纳米线的表面形貌讨论了纳米线可能的生长机理为“底部生长”机理. 利用拉曼光谱和光致发光光谱研究了Zn_xCd_1-xS纳米线的光学性质,其纵向光学(LO)声子的拉曼位移频率随着组成的变化在ZnS和CdS的拉曼位移频率之间连续变化. 光致发光光谱中同时存在带边发光和缺陷发光. Zn_xCd_1-xS纳米线的带间跃迁的频率可随着组成的调节而调节,纳米线的禁带宽度介于ZnS (3.63 eV)和CdS (2.41 eV)的禁带宽度之间.     

表面活性剂辅助合成CdWO4纳米棒和纳米线

以Na₂WO₄•2H₂O和CdCl₂ 为主要原料, 分别在十六烷基三甲基溴化铵(CTAB)和十二烷基苯磺酸钠(SDBS)表面活性剂中, 在180 ℃反应16 h, 水热制备了CdWO₄纳米棒和纳米线. 利用X射线粉末衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)等手段对产物进行了表征, 并对其在室温下的发光特性进行了测定. 实验结果表明: 产物均为具有单斜结构的单相CdWO₄. 其中CdWO₄纳米棒具有单晶属性, 平均粒径约为63 nm, 长度近1 µm; 而CdWO₄纳米线具有多晶特性, 平均粒径约为12 nm, 长度达十几微米. 当激发波长为253 nm时均有460 nm强的发射峰, 其中CdWO₄单晶纳米棒的发光强度大于CdWO₄多晶纳米线. 分别对CdWO₄纳米棒和纳米线形成的可能机理进行了初步分析.     

Er3+和Ce3+/Ce4+掺杂β-BaB2O4纳米棒的制备、结构与发光性质

以Ba(NO3)2、NaBH4、Er2O3和CeO2为原料, 在十六烷基三甲基溴化铵(CTAB)表面活性剂辅助下, 采用水热法制备了β-BaB2O4 (β-BBO)纳米棒, 稀土离子Er3+单掺杂的β-BBO(β-BBO:Er3+)及Er3+和Ce3+/Ce4+共掺杂的β-BBO(β-BBO:Er3+/Ce3+/Ce4+)纳米棒. 通过X射线粉末衍射(XRD)、傅里叶变换红外(FTIR)光谱、拉曼光谱、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线光电子能谱(XPS)和光致发光(PL)光谱分别对样品的物相、结构、形貌、成分及光致发光性质进行了表征. 研究结果表明: 微量稀土离子掺杂并不改变β-BBO的结构, 制得的纳米棒尺寸均匀, 长度在200-500 nm 之间, 直径在10-20 nm 之间; β-BBO:Er3+和β-BBO:Er3+/Ce3+/Ce4+纳米棒在400nm光激发下, 在可见光范围内都观察到中心波长为515和542 nm的绿光. 对发光机理的初步研究表明: 发光分别对应于Er3+的2H11/2→4I15/2, 4S3/2→4I15/2跃迁, 铈离子以Ce3+和Ce4+两种形式存在于体系中, Ce3+对Er3+起敏化作用, 可以显著增强β-BBO:Er3+/Ce3+/Ce4+纳米棒的发光强度, 存在Ce3+→Er3+的能量传递过程.     

泡沫镍载 NiCO2O4电极的制备及其催化 H2O2电氧化的性能

本文以水热法结合热处理法原位制备了泡沫镍载 NiCo₂O₄纳米线电极,使用XRD、SEM和TEM对合成的 NiCo₂O₄纳米线进行了表征,NiCo₂O₄纳米线直径约80 nm,长度约 3 ~ 5 μm. 使用循环伏安和计时电流法测试了泡沫镍载NiCo₂O₄纳米线催化H₂O₂的电氧化性能,结果表明泡沫镍载NiCo₂O₄纳米线对H₂O₂电氧化有着优良的催化活性、稳定性和传质性能,在0.3 V电位下0.4 mol·L ^-1 H₂O₂和2 mol·L ^-1 NaOH溶液中氧化电流可达380 mA·cm ^-2.     

Mg掺杂GaN纳米线的结构及其特性

利用类似Delta掺杂技术在硅衬底上沉积Mg:Ga2O3薄膜, 然后在850 ℃下对薄膜进行氨化, 反应后制备出大量Mg掺杂GaN纳米线. 采用扫描电子显微镜(SEM)、X射线衍射(XRD)、傅里叶变换红外(FTIR)光谱和高分辨透射电子显微镜(HRTEM)对样品进行分析.结果表明, Mg掺杂GaN纳米线具有六方纤锌矿单晶结构, 纳米线的直径在30-50 nm范围内, 长度为几十微米.     

Annealing effects on the structure, photoluminescence, and magnetic properties of GaN/Mn3O4 core-shell nanowires

Nanowires consisting of GaN/Mn₃O₄ were prepared using a two-step approach that involved dipping the as-synthesized GaN nanowires into an aqueous manganese acetate solution. To examine the effects of annealing, GaN/Mn₃O₄ core-shell nanowires were heated thermally to 700 °C in N₂ ambient. Transmission electron microscopy showed that the continuous Mn₃O₄ shell layer had agglomerated to expose a bare GaN core surface after thermal annealing. The magnetic measurements showed that the ferromagnetic behavior of the GaN nanowires had been suppressed by coating with the Mn₃O₄ shell, without significant change by the subsequent thermal annealing. The GaN/Mn₃O₄ core-shell nanowires exhibited blue, green, and red photoluminescence (PL) emission. The red emission was enhanced by thermal annealing. This paper discusses the associated mechanism for the variations in PL and magnetic properties of GaN/Mn₃O₄ core-shell nanowires.