In、Sc掺杂对SrTiO_3电子结构和光学性质的影响(英文)

采用基于密度泛函理论的第一性原理平面波超软赝势计算方法,研究了In、Sc p型掺杂对SrTiO_3母体化合物稳定性、电子结构和光学性质的影响.计算结果表明:掺杂后,SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3的稳定性降低,体系显示p型简并半导体特征,掺杂仅引起杂质原子近邻区域的几何结构发生变化.同时,SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3体系的光学带隙分别展寬0.35、0.30 eV,光学吸收边发生蓝移,在1.25.2.00 eV的能量区间出现新的吸收峰,该吸收峰与体系Drude型自由载流子的激发相关.此外,SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3体系的可见光透过率有了明显的提高,在350-625 nm波长范围透过率高于85%.掺杂原子在费米能级处低的电子态密度限制了跃迁概率和光吸收.大的禁带宽度、小的跃迁概率和弱的光吸收是SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3体系具有较高光学透明度的原因.     

Mn掺杂GaN的电子结构及光学性质

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法(PWP)计算Mn掺杂GaN(Ga1-xMnN)晶体的电子结构及光学性质,详细讨论掺杂后电子结构的变化.计算表明,Mn掺杂GaN使得Mn 3d与N 2p轨道杂化,产生自旋极化杂质带,Ga1-xMnxN表现为半金属性,非常适于自旋注入,说明该种材料是实现自旋电子器件的理想材料.另结合实验结果分析掺杂后体系的光学性质,发现吸收谱在1.3 eV处出现吸收峰,吸收系数随Mn2+浓度增加而增大.分析表明,该峰是源于Mn2+离子e态与t2态间的带内跃迁.     

N掺杂TiO_2光催化剂的微结构与吸光特性研究

以紫外可见漫反射光谱(UV-VIS-DRS)和X射线光电子能谱(XPS)分析和研究了四种方法制备的N掺杂TiO2光催化剂的结构,即水解法(N/TiO2-H)、氨热还原法(N/TiO2-A)、机械化学法(N/TiO2-M)和尿素热处理法(N/TiO2-T)等.结果表明,N/TiO2-H和N/TiO2-T两种催化剂在490 nm处有吸收带边,可见光激发途径是掺杂的N以填隙方式形成的杂质能级吸收电子发生的跃迁引起的;而N/TiO2-A和N/TiO2-M两种催化剂在整个可见光区域内具有可见光吸收,其对可见光的激发途径是掺杂N和氧空缺共同作用的结果.理论计算的N杂质能级位于价带上0.75 eV,与实验观察到的吸收带边结果十分吻合.XPS结果表明,几种催化剂的N1 s结合能位置都在399 eV附近,显示为填隙掺杂的N原子.填隙掺杂的N/TiO2,其Ti原子的2p结合能与未掺杂的TiO2相比增加了+0.3-+0.6 eV,而O1s电子的结合能增加了+0.2-+0.5eV,这是因为填隙的N原子夺取Ti和O的电子,Ti和O原子周围的电子密度降低了.电子能谱和吸光特性的研究都表明,掺杂的机理是在TiO2晶格内形成N原子的填隙.     

Ti(Ⅳ)掺杂Bi_2O_3电子结构和可见光催化活性的原理

密度泛函理论(DFT)计算对掺杂体系新型环境光催化剂设计开发具有指导意义.基于DFT框架下的第一性原理平面波超软赝势方法(USPP),对α、β、γ、δ-Bi2O3晶体几何结构分别进行了优化计算,从理论上得到了Bi2O3的总体态密度(TDOS)和Bi、O原子的分波态密度(PDOS).在此基础上对Bi2O3超晶胞进行Ti(IV)的掺杂计算,讨论了Ti(IV)掺杂对各种Bi2O3的电子结构和光吸收特性的影响.结果表明Ti(IV)掺杂Bi2O3晶体后,Ti(IV)的3d轨道进入禁带并与O2p、Bi6p轨道作用,使禁带宽度(Eg)变小,Bi2O3的吸收边红移,从而有助于Bi2O3光催化活性的改善.通过水热合成法制备的Ti(IV)掺杂Bi2O3样品的紫外-可见光漫反射光谱验证了计算的结果.在光催化降解有机染料结晶紫的实验中,光催化剂活性的改善进一步得到证实.     

Ni 掺杂ZnO纳米线的电子结构与磁性

采用自旋极化密度泛函理论系统研究了Ni掺杂ZnO纳米线的电子结构、磁学和光学性质.磁学性质计算结果显示六种Ni掺杂ZnO纳米线的磁性耦合体系出现了铁磁(FM)、反铁磁(AFM)和顺磁(PM)二种不同的耦合状态.能量计算结果表明Ni原子在纳米线外表面沿[0001]方向替代Zn原子时能量最低,体系的AFM耦合相对稳定,AFM体系表现出金属性.态密度计算结果显示FM耦合在费米能级附近出现了明显的自旋极化现象,发生了强烈的Ni 3d和O 2p杂化效应,掺杂产生的磁矩主要来源于Ni 3d未成对轨道电子和部分O 2p轨道电子的贡献,FM耦合表现出半金属性.另外,光学性质计算结果显示Ni掺杂ZnO纳米线的远紫外吸收峰发生了红移现象,而380 nm附近的近紫外吸收峰发生了明显的蓝移现象,在整个紫外区都表现出了优异的发光性能.以上结果表明Ni掺杂ZnO纳米线是一种很有前途的磁光电子材料.     

Cu掺杂MgF2晶体的电子结构及光学特性

基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法,计算了纯的MgF2晶体和掺杂不同原子分数(2.08%,4.16%,6.24%)Cu的MgF2晶体结构、电学性质以及光学性质.结果表明:Cu的掺入导致MgF2晶体禁带宽度逐渐变窄,并且Cu掺杂使得MgF2晶体折射率和吸收峰增加,特别是在4eV附近区域出现了新吸收峰.同时也给出了引起体系性质变化的物理机制,Cu掺杂MgF2晶体在光电化学方面有着潜在的应用价值.     

ZnSe掺Cu与Zn空位缺陷的稳定性、电子结构与光学性质

采用基于密度泛函理论框架下的第一性原理平面波超软雁势方法, 对ZnSe闪锌矿结构本体、掺入p型杂质Cu(Zn_0.875Cu_0.125Se)及Zn空位(Zn_0.875Se)超晶胞进行结构优化处理. 计算并详细分析了缺陷体系的形成能和三种体系下ZnSe材料的态密度、能带结构、集居数、介电和吸收光谱. 结果表明: 在Zn空位与Cu掺杂ZnSe体系中, 由于空位及杂质能级的引入, 禁带宽度有所减小, 吸收光谱产生红移; 单空位缺陷结构不易形成, Zn_0.875Se结构不稳定, Cu掺杂ZnSe结构相对更稳定.     

钛铁矿型六方相ZnTiO3的电子结构和光学性质

分别采用基于密度泛函理论(DFT)的局域密度近似(LDA)和广义梯度近似(GGA)方法对钛铁矿型六方相ZnTiO₃的电子结构进行了第一性原理计算, 并在局域密度近似下计算了六方相ZnTiO₃的光学性质, 并将计算结果与实验数据进行了对比. 结果表明, 在局域密度近似下计算得到的结构参数更接近实验数据. 理论预测六方相ZnTiO₃属于直接带隙半导体材料, 其禁带宽度(布里渊区Z 点)为3.11 eV. 电子态密度和Mulliken 电荷布居分析表明Zn―O键是典型的离子键而Ti―O键是类似于钙钛矿型ATiO₃ (A=Sr, Pb, Ba)的Ti―O共价键. 在50 eV的能量范围内研究了ZnTiO₃的介电函数、吸收光谱和折射率等光学性质, 并基于电子能带结构和态密度对光学性质进行了解释.     

A density functional theory study of the noble metal adsorption on the CeO2(111) surface

利用密度泛函理论系统研究了贵金属原子(Au、Pd、Pt和Rh)在CeO2( 111)表面的吸附行为.结果表明,Au吸附在氧顶位最稳定,Pd、Pt倾向吸附于氧桥位,而Rh在洞位最稳定.当金属原子吸附在氧顶位时,吸附强度依次为Pt ＞Rh＞ Pd＞Au.Pd、Pt与Rh吸附后在Ce 4 f、O2p电子峰间出现掺杂峰;Au未出现掺杂电子峰,其d电子峰与表面O2p峰在-4 -1 eV重叠.态密度分析表明,Au吸附在氧顶位、Pd与Pt吸附在桥位、Rh吸附在洞位时,金属与CeO2(111)表面氧原子作用较强,这与Bader电荷分析结果相一致.     

不同SnO2晶体结构的力学性能及电子结构

采用基于密度泛函理论(DFT)的平面波超软赝势法, 用广义梯度近似(GGA)PBE交换相关泛函, 对高压相变产生五种不同SnO2晶体结构的电子结构和力学性质进行了第一性原理计算. 计算结果表明, Pnam型SnO2的形成相对困难, 体模量较大, Pbca和Pnam型SnO2的维氏硬度值相差不明显. 不同晶体结构的带隙存在差异, 导带区域电子分布和弥散程度大于价带区域,局域性差. 五种SnO2晶体结构的价带部分约在-10 - 0 eV和-20 - -15 eV处, 主要贡献来自于O 2p、2s轨道. 光学性质计算表明, Pnam结构对紫外波段光的吸收最明显, 同时给出电子轨道跃迁规律.     

Enhancing effect of Sn doping for the optical absorption of BaO/BaTiO3 interphase by first principles calculations

A narrow bandgap and high optical absorption are significantly important for the development of ferroelectric photovoltaic (FE-PV). Nine lateral interface structures, which consist of Sn-doped BaO (BSO) and BaTiO₃ (BTO), are constructed in this work. The bandgap of BSO/BTO decreases to 1.20 eV from 2.46 eV of BTO based on first principles calculations. The electronic structures show that the Sn doping plays a very important role for the bandgap decrease of BaO/BTO. The optical adsorption coefficient of BSO/BTO remarkably increases compared with that of BTO.     

Ferromagnetism and structural deformation in monolayer alpha lead oxide induced by N and F doping: New insights from first principles

We study the structural, electronic, and magnetic properties of monolayer α-PbO_0.875A_0.125 (A = N, F), which are calculated using first principles. As a result, N doping induces local ferromagnetism centered at the N²⁻ site, originating from the spin-down N 2p valence states. On the other hand, F doping induces nonmagnetism and induces ab-plane deformation, where F⁻ receives one electron to its nearest-neighboring Pb^1.75+ ions. N doping redshifts the bandgap of the undoped system and transforms it to be indirect, while F doping blueshifts the bandgap through the Burstein-Moss effect. The hybridization of Pb 6p and O 2p orbitals is stronger near the A site than that of the crystal structure edge. Our result shows new insights, predicting possible experimental results for future functional device applications.     

Communication: strong excitonic and vibronic effects determine the optical properties of Li2O2

The band structure and optical absorption spectrum of lithium peroxide (Li(2)O(2)) is calculated from first-principles using the G(0)W(0) approximation and the Bethe-Salpeter equation, respectively. A strongly localized (Frenkel type) exciton corresponding to the π(?)→σ(?) transition on the O(2)(-2) peroxide ion gives rise to a narrow absorption peak around 1.2 eV below the calculated bandgap of 4.8 eV. In the excited state, the internal O(2)(-2) bond is significantly weakened due to the population of the σ(?) orbital. As a consequence, the bond is elongated by almost 0.5 ? leading to an extreme Stokes shift of 2.6 eV. The strong vibronic coupling entails significant broadening of the excitonic absorption peak in good agreement with diffuse reflectance data on Li(2)O(2) which shows a rather featureless spectrum with an absorption onset around 3.0 eV. These results should be important for understanding the origin of the high potential losses and low current densities, which are presently limiting the performance of Li-air batteries.     

Doping effects on proton incorporation and conduction in SrZrO3

The doping effects on the proton incorporation and protonic conductivity of perovskite-type SrZrO3 were investigated using the density functional theory (DFT) with the generalized gradient approximation (GGA). The optimized geometries, formation energies of hydrogen defect and activation energies for hydrogen diffusion in SrZrO3 doped with Al, Sc, Ga, Y, Rh, In, and Yb were calculated. It was shown that the doping leads to large local distortions around hydrogen and dopant ion, affecting the protonic conduction in these oxides. The alignment of hydrogen levels varies with the dopant introduced into the SrZrO3. In In-, Y-, Sc-, Ga-, and Al-doped SrZrO3, the H+ is the lowest energy state in all the bandgap. But for Yb- and Rh-doped SrZrO3, the H+ is the lowest energy state only when the Fermi energy below 2.37 and 2.66 eV, respectively. The estimates of the activation energy show good agreement between the measured and calculated activation energies. Also, the hydrogen diffusion seems to become more difficult as the distance between hydrogen and dopant ion decreases.     

Electronic and magnetic properties of all 3d transition‐metal‐doped ZnO monolayers

Stable geometries, electronic structures, and magnetic properties of the ZnO monolayer doped with 3d transition‐metal (TM) (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, and Cu) atoms substituting the cation Zn have been investigated using first‐principles pseudopotential plane wave method within density functional theory (DFT). It is found that these nine atomic species can be effectively doped in the ZnO monolayer with formation energies ranging from ?6.319 to ?0.132 eV. Furthermore, electronic structures and magnetic properties of ZnO monolayer can be modified by such doping. The results show that the doping of Cr, Mn, Fe, Co, Ni, and Cu atoms can induce magnetization, while no magnetism is observed when Sc, Ti, and V atoms are doped into the ZnO monolayer. The magnetic moment is mainly due to the strong p–d mixing of O and TM (Cr, Mn, Fe, Co, Ni, and Cu) orbitals. These results are potentially useful for spintronic applications and the development of magnetic nanostructures. © 2013 Wiley Periodicals, Inc.     

Fe_3O_4/SrTiO_3复合光催化剂降解甲基橙

用共沉淀法制备了SrTiO3光催化剂及Fe3O4/SrTiO3复合光催化剂.通过紫外-可见漫反射光谱、XRD、SEM-EDX对其进行表征,以甲基橙为探针分子考察其光催化性能.结果表明,适量Fe3O4的掺入可明显提高Sr-TiO3光催化剂对可见光的吸收,从而增强其光催化性能;在光降解甲基橙的反应中,掺杂10%Fe3O4的SrTiO3光催化剂其催化活性是纯SrTiO3光催化剂的两倍.     

Dopant ion size and electronic structure effects on transparent conducting oxides. Sc-doped CdO thin films grown by MOCVD

A series of Sc-doped CdO (CSO) thin films have been grown on both amorphous glass and single-crystal MgO(100) substrates at 400 degrees C by MOCVD. Both the experimental data and theoretical calculations indicate that Sc3+ doping shrinks the CdO lattice parameters due to its relatively small six-coordinate ionic radius, 0.89 angstroms, vs 1.09 angstroms for Cd2+. Conductivities as high as 18100 S/cm are achieved for CSO films grown on MgO(100) at a Sc doping level of 1.8 atom %. The CSO thin films exhibit an average transmittance >80% in the visible range. Sc3+ doping widens the optical band gap from 2.7 to 3.4 eV via a Burstein-Moss energy level shift, in agreement with the results of band structure calculations within the sX-LDA (screened-exchange local density approximation) formalism. Epitaxial CSO films on single-crystal MgO(100) exhibit significantly higher mobilities (up to 217 cm2/(V x s)) and carrier concentrations than films on glass, arguing that the epitaxial CSO films possess fewer scattering centers and higher doping efficiencies due to the highly textured microstructure. Finally, the band structure calculations provide a microscopic explanation for the observed dopant size effects on the structural, electronic, and optical properties of CSO.