ZnO氧缺陷的电子结构和光学性质

采用基于密度泛函理论的平面波超软赝势方法对ZnO_0.875的电子结构和光学性质进行了计算. 用第一性原理对含氧空位的ZnO晶体进行了结构优化处理, 计算了完整的和含氧空位的ZnO晶体的电子态密度. 结合精确计算的电子态密度分析了带间跃迁占主导地位的ZnO_0.875 材料的介电函数、吸收系数、折射系数、湮灭系数和反射系数, 并对光学性质和极化之间的联系做了详细讨论. 结果表明ZnO_0.875晶体是单轴晶体, 并且在低能区域存在因氧缺陷而造成的一些特性. 我们的研究结果为ZnO的发光特性提供新的视野, 同时为ZnO的光电子材料的设计和应用提供理论基础.     

第一性原理研究MgZn2相的电子结构及磁性质

运用密度泛函理论的第一性原理计算分析了MgZn₂相的电子结构及相关磁性质。能带结构和态密度分析表明Zn4s和Zn4p轨道、Mg3s和Mg3p轨道分别发生sp态杂化,然后杂化态之间相互作用而形成Zn-Mg键;Mulliken布居分布计算显示:Zn₁-Mg(Zn₁是处于晶格边缘的Zn原子)和Zn₂-Mg(Zn₂是处于晶格内部的Zn原子)电子云重叠布居数接近0,电子密度分析显示Zn-Mg之间电子密度分布具有明显的定域性。结合上述结果与Zn、Mg原子的电负性差异,确定Zn-Mg键为极性共价键。分态密度(PDOS)分析显示,Zn₁-Mg键和Zn₂-Mg键的差异主要表现在Zn₂4s轨道在-10~-6 eV区域对成键的贡献度高于Zn₁4s轨道,而Zn₁4s轨道在2~5 eV区域对成键的贡献度高于Zn₂4s轨道。进一步对MgZn₂的积分自旋态密度和磁矩计算表明:MgZn₂磁性质表现为顺磁性,其磁性主要来源于Zn₁-Mg键中的2个自旋相同的未配对电子;MgZn₂的顺磁性特性将使Al-Zn-Mg-Cu(7xxx系)高强铝合金产生磁致塑性效应。     

碱土金属氧化物掺杂氧化铈基电解质材料中的晶格缺陷

基于能量最小化算法，对碱土金属氧化物(MgO、CaO、SrO、BaO)掺杂的氧化铈基电解质缺陷进行模拟计算. 研究了掺杂离子与空位缺陷形成能和氧空位跃迁能之间的关系. 结果说明，在碱土金属氧化物掺杂氧化铈的固溶反应中，氧空位缺陷是电荷补偿缺陷的首选形式，CaO和SrO较MgO和BaO 易溶于CeO₂; Ca²⁺掺杂离子与氧空位缺陷对[CaCe″•VO^••]×的结合能最高；复合缺陷[VO•••MCe″•VO••]••在CeO₂中的状态不稳定；氧空位在次近邻间的跃迁能最低，因此最容易实现跃迁.     

硫脲修饰ZnSe:Cu量子点的水相合成及荧光特性

以3-巯基丙酸为稳定剂在水相中合成了Cu掺杂的ZnSe量子点(QDs), 并利用硫脲(CH₄N₂S)对其进行表面修饰, 制备出核壳结构的ZnSe:Cu/ZnS 量子点. 制得的量子点呈闪锌矿结构, 尺寸约为5 nm, 有较好的分散性, 其荧光发射峰在460 nm左右. 经CH₄N₂S修饰后, 量子点表面形成了宽禁带的ZnS包覆层, 将电子和空穴限域在了ZnSe:Cu 核内, 减少了表面发生非辐射复合的载流子, 显著提高了量子点的荧光强度. 与Na₂S、硫代乙酰胺(TAA)等常用硫源相比, 以CH₄N₂S为硫源制得的ZnSe:Cu/ZnS 量子点壳层厚度可控, 表面钝化效果更好, 显示出更佳的荧光效率和稳定性. ZnSe:Cu/ZnS 量子点经过紫外线照射后消除了表面的悬空键, 进一步提高了其量子产率, 最终获到了具有较好荧光性质的ZnSe:Cu/ZnS量子点.     

锌掺杂OV-β-Bi2O3可见光催化活性的提高:能带结构的调节和电荷分离的促进

采用溶胶-凝胶-原位碳热还原处理的方法,制备了一种含有氧空位（OV）的新型Zn掺杂β-Bi₂O₃纳米材料（OV-Zn：Bi₂O₃）,氧空位的浓度可以通过改变Zn²⁺的掺杂量进行调节。作为参照,只有氧空位没有Zn²⁺的新型β-Bi₂O₃（OV-β-Bi₂O₃）也通过类似的方法制得。通过紫外可见漫反射光谱、X射线光电子能谱、电子顺磁共振、光致发光光谱和光电化学测试,系统研究了氧空位和Zn²⁺掺杂对OV-Zn：Bi₂O₃降解亚甲基蓝（MB）和2,4,6-三氯苯酚（2,4,6-TCP）可见光催化活性的综合影响。结果表明,氧空位的引入不仅可以使光吸收向长波方向拓展,而且可以促进光生载流子的分离。因此,与传统的β-Bi₂O₃相比,OV-β-Bi₂O₃对亚甲基蓝（MB）和2,4,6-三氯苯酚（2,4,6-TCP）的降解活性显著增强。对于OV-Zn：Bi₂O₃催化剂,Zn²⁺掺杂可使光催化剂的价带边缘向下移动,增强了光激发空穴的氧化能力,并且适量的锌掺杂也能提高光生载流子的分离效率。因此,OV-Zn：Bi₂O₃的可见光活性优于OV-β-Bi₂O₃,而且当Zn与Bi物质的量之比为0.3时,OV-Zn：Bi₂O₃-0.3对MB和2,4,6-TCP的降解活性最高。     

第一性原理研究MgZn2相的电子结构及磁性质

运用密度泛函理论的第一性原理计算分析了MgZn₂相的电子结构及相关磁性质。能带结构和态密度分析表明Zn₄s和Zn₄p轨道、Mg₃s和Mg₃p轨道分别发生sp态杂化,然后杂化态之间相互作用而形成Zn-Mg键;Mulliken布居分布计算显示:Zn₁-Mg(Zn₁是处于晶格边缘的Zn原子)和Zn₂-Mg(Zn₂是处于晶格内部的Zn原子)电子云重叠布居数接近0,电子密度分析显示Zn-Mg之间电子密度分布具有明显的定域性。结合上述结果与Zn、Mg原子的电负性差异,确定Zn-Mg键为极性共价键。分态密度(PDOS)分析显示,Zn₁-Mg键和Zn₂-Mg键的差异主要表现在Zn₂4s轨道在-10~-6eV区域对成键的贡献度高于Zn₁4s轨道,而Zn₁4s轨道在2~5eV区域对成键的贡献度高于Zn₂4s轨道。进一步对MgZn₂的积分自旋态密度和磁矩计算表明:MgZn₂磁性质表现为顺磁性,其磁性主要来源于Zn₁-Mg键中的2个自旋相同的未配对电子;MgZn₂的顺磁性特性将使Al-Zn-Mg-Cu(7×××系)高强铝合金产生磁致塑性效应。     

Zn-Mg合金的结构分析和Zn-Mg扩散体系的物相分布

分子动力学(MD)模拟常采用径向分布函数(RDF)、Honeycutt-Anderson (HA)键型指数法、原子团类型指数法(CTIM)表征物相的微观结构. 本文依据CTIM 理论, 对CTIM 进一步发展, 使CTIM 不仅能够表征bcc\fcc\hcp\非晶体, 也能表征其它晶系的晶体结构. 本文采用CTIM 完成Zn-Mg 合金标准晶体的结构表征和Zn-Mg扩散体系物相分布的分析. 结果表明: 合金组元的CTIM指数不仅反映了Mg₂₁Zn₂₅、MgZn₂、Mg₂Zn₁₁晶体结构的差异, 也说明了Mg₄Zn₇、MgZn₂晶体结构十分相近. Zn-Mg扩散体系两步法模拟后, 体系两端交替分布着hcp 与fcc 结构; 体系中部形成大量的非晶体; Zn原子端交替分布着hcp 与fcc 结构的界面区域主要是Zn12-C类原子.     

过渡金属元素Sc、Cr和Mn对Mg2Ge掺杂的第一性原理研究

基于密度泛函理论(DFT)的第一性原理计算,研究了过渡金属元素Sc、Cr和Mn掺杂对Mg₂Ge晶体光、电、磁性质的影响。结果表明,Sc掺杂能使Mg₂Ge的费米能级进入导带,呈n型简并半导体;Cr和Mn掺杂能使Mg₂Ge能带结构和态密度在费米能级附近产生自旋劈裂而形成净磁矩,表现为半金属磁体和稀磁半导体,体系净磁矩均来自杂质原子3d轨道电子及其诱导极化的Ge4p态和Mg2p态自旋电子。与本征Mg₂Ge相比,掺杂体系静态介电常数增大,扩展了吸收光谱,提升了近红外光波段吸收能力。     

Sb掺杂ZTO透明导电薄膜的结构和性能

采用溶胶凝胶法和旋涂法制备Sb掺杂钙钛矿结构ZTO（ZnSnO₃）透明电薄膜,并借助XRD、SEM、XPS、UV-Vis和Hall效应测试等手段研究了其结构和性能。比较了Sb离子单独置换ZnSnO₃晶体中的Zn²⁺或Sn⁴⁺,以及同时置换Zn²⁺和Sn⁴⁺等3种置换方式所得薄膜的结晶状态,分析了不同置换方式形成的薄膜中Sb离子实际占有的晶格位置,以及Sb⁵⁺与Sb³⁺的比例变化。探讨了不同置换方式晶体中氧空位（V_O^..）、锌间隙（Zn_i^..）和锡离子变价（Sn_Sn"）等结构缺陷相应的含量变化,并研究Sb离子掺杂浓度对薄膜晶体结构、结构缺陷和电阻率的影响。研究表明,3种置换方式的Sb掺杂ZTO薄膜均保持单一ZnSnO₃晶相,并且Sb离子均按设计的方案进入了相应的晶格位置,但不同置换方式的薄膜中,Sb⁵⁺与Sb³⁺的比例不同,并且会随Sb离子浓度增大而逐渐减小。研究证明Sb离子置换方式以及掺杂浓度均会显著影响薄膜中载流子的浓度和迁移率,从而影响其电性能。在所制备的薄膜中,Sb离子单独置换Zn²⁺且组成为Sb_0.15Zn_0.35Sn_0.5O_1.5的薄膜电阻率最低,为0.423 Ω·cm。此外,所有Sb掺杂ZTO薄膜在360~800 nm波长范围内透过率均在78%以上。     

Ni离子掺杂锐钛矿相TiO2体系的第一性原理研究

采用自旋密度泛函理论的第一性原理方法并结合晶体配位场理论,研究了Ni离子掺杂锐钛矿相TiO₂体系（Ni_xTi_1-xO₂;Ni_xTiO₂）的几何结构、缺陷形成能、电子结构以及磁性特征等问题。结果表明：实验上发现的有关Ni掺杂TiO₂体系的很多矛盾,如：晶粒体积的增减、掺杂Ni离子的不同价态、吸收光谱带边移动方向和体系磁性特征的差异等问题都可归因于Ni离子掺杂类型的不同（Ni_Ti;Ni_in）。分析表明,不同的Ni离子掺杂类型导致所成Ni-O键的键长和电荷布居不同,从而使Ni离子呈现不同的价态,这也是体系宏观电学和磁学性能差异的根本原因。形成能计算表明,通过控制Ni-TiO₂晶体生长过程中的氧环境,可以人为的控制Ni离子的掺杂类型。     

The electronic structure and properties of Ni1−xLixO1−y (0⩽x⩽1/4, 0⩽y⩽1/8)

The electronic structures of NiO, Ni_0.875O, NiO_0.875, Ni_0.875Li_0.125O, Ni_0.875Li_0.125O_0.875 and Ni_0.75Li_0.25O_0.875 with a NaCl-type crystal structure have been calculated using the ab initio linear muffin-tin orbitals method in the LSDA+U approximation. The effect of vacancies in the metal and metalloid sublattices and lithium ions on parameters of the NiO electronic spectrum (the energy gap and the valence band widths, etc.) has been analyzed. It is shown that the defects like the dipole LiV_O and the tripole LiV_OLi impaired stability and could reduce electrical conductivity of the nickel–oxide-based phases.     

Synthesis and Growth of Flower-Like Zn-Doped CdSe Microstructures

Hexagonal phase flower-like Zn-doped CdSe (Cd_1-xZn_xSe, x = 0.3) semiconductor microstructures from the solid air-stable precursor have been achieved in the mixed solution of ethylenediamine (en) and ethylene glycol (EG) at 180°C for 12 hours. Characterized by powder x-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy dispersive spectrum (EDS), and UV-vis absorption spectroscopy, it can be seen that the as-synthesized Cd_0.7Zn_0.3Se is hexagonal phase, and each flower-like Cd_0.7Zn_0.3Se microstructure is made up of many Cd_0.7Zn_0.3Se nanoflakes. From the UV-vis absorption spectrum of the product, it was observed that the optical band gap energies of flower-like Cd_0.7Zn_0.3Se microstructures shift toward shorter wavelengths compared with CdSe.     

Hydrothermal synthesis and characterization of Nd-doped ZnSe nanoparticles with enhanced visible light photocatalytic activity

In the present study, Nd³⁺-doped ZnSe nanoparticles with variable Nd contents were successfully synthesized via a hydrothermal process using Neodymium (III) chloride hexahydrate as the doping source. X-ray diffraction, UV–Vis diffuse reflectance spectroscopy (DRS), scanning electron microscopy and transmission electron microscopy were used for characterization of the synthesized nanoparticles. It was confirmed by the DRS analysis that both of the undoped and Nd-doped ZnSe samples had significant optical absorption in the visible light range. The photocatalytic performance of as-synthesized nanoparticles was investigated towards the decolorization of C. I. Acid Orange 7 solution under visible light irradiation. Results indicated that the loading of Nd dopant into ZnSe nanoparticles significantly enhanced the photocatalytic activity of pure ZnSe with increasing Nd loading up to 6 mol% (color removal efficiency of 24.31 % for ZnSe and 84.20 % for Nd_0.06Zn_0.94Se after 120 min of treatment) and then the photocatalytic activity began to decrease.     

Investigating the Mechanism by Which Intragap States Tailor Light Emission: Case of Copper Deficient and Zn Doped Cu−In−Se Quantum Dots**

The large structural tolerance of I–III–VI group quantum dots (QDs) to off-stoichiometry allows their photoluminescence properties to be adjusted via doping, thereby enabling application in different fields. However, the photophysical processes underlying their photoluminescence mechanism remain significantly unknown. In particular, the transition channels of CuInSe₂ QDs, which are altered by intrinsic and extrinsic intragap states, remain poorly reported. Herein, we investigated the photophysical processes associated with intragap states via electrochemical and optical techniques by using copper deficient Cu−In−Se QDs as well as Zn doped Cu−In−Se QDs. When the Cu/In molar ratios of Cu−In−Se QDs increased from 0.3 : 1 to 0.9 : 1, the photoluminescence spectra displayed a red-shift from 700 nm to 1050 nm. Although there was a blue-shift after the introduction of Zn²⁺ dopants in Cu−In−Se QDs, a significant red-shift occurred (from 660 nm to 760 nm) when the Zn/Cu molar ratios decreased from 0.7 : 0.3 to 0.3 : 0.7. The Gaussian deconvolution results of the photoluminescence spectra and the band gap derived from absorption spectra by fitting supported the fact that the optical transition channels are dependent on the Cu/In and Zn/Cu molar ratios. After the introduction of the Zn²⁺ ions, the alloyed-resultant blue-shift of the emission spectra was observed, primarily due to the enlarged band gap; however, the radiative recombination of prominent intrinsic intragap states is still observed; and only a small proportion of the band-edge exciton undergoes recombination for the sample with low Zn content. Cyclic voltammetry measurements revealed well-defined extrinsic Zn_Cu intragap states (Zn substitution on Cu sites) and intrinsic Cu^x (x= 1+/2+) states in the band gap. The results presented here provide a better understanding of the varying effects of dopant on photoluminescence in terms of I–III–VI group QDs.     

Emission Properties of the Plasma in Mixtures of Helium with Diethylzinc and Hydrogen Selenide Vapors

The emission properties in the range 200-600 nm of the low-temperature plasma in mixtures of He with Et₂Zn and H₂Se vapors were studied. The spectrum of emission accompanying decomposition of Et₂Zn includes 26 identified lines of Zn atoms and strong emission of electronically excited CH* radicals, and in the case of decomposition of H₂Se two emission lines of Se atoms and an emission band of SeH* radicals are observed. The rate constants of quenching of the levels He 4d ³ D _2,1 and 3p ¹ P ₁ on introduction into the He plasma of Et₂Zn and H₂Se vapors were determined; Et₂Zn is a stronger quenching agent than H₂Se. Analytical lines allowing monitoring of ZnSe film deposition were selected. Direct plasmochemical decomposition of mixtures of Et₂Zn with H₂Se results in growth of textured ZnSe(cub) layers with substantial inclusions of the hexagonal phase and with carbon-containing inclusions. The photoluminescence spectra of the films obtained exhibit a strong edge band at 460 nm, overlapping with a strong self-activated band centered at 540 nm.     

Polyol-mediated synthesis of Cu2ZnSn(S,Se)4 kesterite nanoparticles and their use in thin-film solar cells

Cu₂ZnSnS₄ kesterite nanoparticles (CZTS) with a particle diameter of 10–20 nm are prepared by a polyol-mediated synthesis with diethylene glycol as the liquid phase. The polyol – a high-boiling multidentate alcohol − allows controlling the particle size and agglomeration as well as preparing readily crystalline nanoparticles. The as-prepared kesterite nanoparticles exhibit an overall composition of Cu_1.56Zn_1.29Sn_1.16S_4.59 and a band gap of 1.37 eV. As a first test, thin-film solar cells are manufactured after layer deposition of the as-prepared CZTS nanoparticles and conversion to Cu₂ZnSn(S,Se)₄ (CZTSSe) via gas-phase selenization. The volume increase of about 15% due to the CZTS-to-CZTSSe conversion supports the formation of a dense layer, reduces the interparticulate surfaces and leads to a reduction of the band gap to 1.14 eV. The chemical composition of the as-prepared CZTS nanoparticles and of the deposited CZTSSe thin film prior and after selenization are studied in detail by energy-dispersive X-ray spectroscopy, Raman spectroscopy and X-ray fluorescence analysis. All these methods confirm the intended copper-poor and zinc-/tin-rich CZTS/CZTSSe composition. The resulting thin-film solar cells show an open-circuit voltage of 247.3 mV, a short-circuit current density of 21.3 mA/cm², a fill factor of 41.1% and a power-conversion efficiency of 2.2%.     

Influence of partial substitution of zinc for copper on electronic structures of YBa2Cu3O y

Summary By use of an approximate band-structure treatment based on the EHMO approach, the energy band structures for the Zn-doped superconductor YBa₂Cu_3–x Zn _x O _y were calculated in the present paper and the influence of partial substitution of zinc for copper on the electronic structures for orthorhombic YBa₂Cu₃O_y was studied. From analysis of the band structures and the densities of states for YBa₂Cu_3–x Zn _x O _y , it was demonstrated that the 2D Cu-O planes in the Y-Ba-Cu-O superconducting system have a direct and dominant influence on superconductivity, whereas the role of the 1D Cu-O ribbons and the O(4) atoms is also of some importance.     

Photoelectronic properties of Cu3PS4 and Cu3PS3Se single crystals

Single crystals of Cu₃PS₄ and Cu₃PS₃Se grown by chemical vapor transport were shown to be diamagnetic p-type semiconductors. Electrical measurements showed room temperature resistivities ranging from 1 to 5 ohm-cm and carrier concentrations of 10¹⁷ cm^?3. Both materials were shown to be active as cathodes for the photoelectrolysis of water. Spectral response measurements show that substitution of selenium for sulfur lowers the optical band gap from 2.38(5) eV for Cu₃PS₄ to 2.06(4) eV for Cu₃PS₃Se.     

In、Sc掺杂对SrTiO3电子结构和光学性质的影响

采用基于密度泛函理论的第一性原理平面波超软赝势计算方法, 研究了In、Sc p型掺杂对SrTiO3母体化合物稳定性、电子结构和光学性质的影响. 计算结果表明:掺杂后, SrIn0.125Ti0.875O3和SrSc0.125Ti0.875O3的稳定性降低, 体系显示p型简并半导体特征, 掺杂仅引起杂质原子近邻区域的几何结构发生变化. 同时, SrIn0.125Ti0.875O3和SrSc0.125Ti0.875O3体系的光学带隙分别展宽0.35、0.30 eV, 光学吸收边发生蓝移, 在1.25-2.00 eV的能量区间出现新的吸收峰, 该吸收峰与体系Drude型自由载流子的激发相关. 此外, SrIn0.125Ti0.875O3和SrSc0.125Ti0.875O3体系的可见光透过率有了明显的提高, 在350-625 nm波长范围透过率高于85%. 掺杂原子在费米能级处低的电子态密度限制了跃迁概率和光吸收. 大的禁带宽度、小的跃迁概率和弱的光吸收是SrIn0.125Ti0.875O3和SrSc0.125Ti0.875O3体系具有较高光学透明度的原因.     

The Influence of Dopant Concentration on Optical-Electrical Features of Quantum Dot-Sensitized Solar Cell

In this study, TiO₂/CdS/Cd_xCu_1−xSe, TiO₂/CdS/Cd_xMn_1−xSe, and TiO₂/CdS/Cd_xAg_2−2xSe thin films were synthesized by chemical bath deposition for the fabrication of photoanode in quantum-dot-sensitized solar cells. As a result, the structural properties of the thin films have been studied by X-ray diffraction, which confirmed the zinc Blende structure in the samples. The optical films were researched by their experimental absorption spectra with different doping concentrations. Those results were combined with the Tauc correlation to estimate the absorption density, the band gap energy, valence band and conduction band positions, steepness parameter, and electron–phonon interaction. Furthermore, the electrical features, electrochemical impedance spectrum and photocurrent density curves were carried out. The result was used to explain the enhancing performance efficiency.