The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation

A challenging approach, but one providing a key solution to material growth, remote epitaxy (RE)—a novel concept related to van der Waals epitaxy (vdWE)—requires the stability of a two-dimensional (2-D) material. However, when graphene, a representative 2-D material, is present on substrates that have a nitrogen atom, graphene loss occurs. Although this phenomenon has remained a hurdle for over a decade, restricting the advantages of applying graphene in the growth of III-nitride materials, few previous studies have been conducted. Here, we report the stability of graphene on substrates containing oxygen or nitrogen atoms. Graphene has been observed on highly decomposed Al₂O₃; however, graphene loss occurred on decomposed AlN at temperatures over 1300 °C. To overcome graphene loss, we investigated 2-D hexagonal boron nitride (h-BN) as an alternative. Unlike graphene on AlN, it was confirmed that h-BN on AlN was intact after the same high-temperature process. Moreover, the overgrown AlN layers on both h-BN/AlN and h-BN/Al₂O₃ could be successfully exfoliated, which indicates that 2-D h-BN survived after AlN growth and underlines its availability for the vdWE/RE of III-nitrides with further mechanical transfer. By enhancing the stability of the 2-D material on the substrate, our study provides insights into the realization of a novel epitaxy concept.

A challenging approach, but one providing a key solution to material growth, remote epitaxy (RE)—a novel concept related to van der Waals epitaxy (vdWE)—requires the stability of a two-dimensional (2-D) material.     

Layer‐Dependent Nonlinear Optical Properties and Stability of Non‐Centrosymmetric Modification in Few‐Layer GaSe Sheets

Gallium selenide, an important second‐order nonlinear semiconductor, has received much scientific interest. However, the nonlinear properties in its two‐dimensional (2D) form are still unknown. A strong second harmonic generation (SHG) in bilayer and multilayer GaSe sheets is reported. This is also the first observation of SHG on 2D GaSe thin layers. The SHG of multilayer GaSe above five layers shows a quadratic dependence on the thickness; while that of a sheet thinner than five layers shows a cubic dependence. The discrepancy between the two SHG responses is attributed to the weakened stability of non‐centrosymmetric GaSe in the atomically thin flakes where a layer–layer stacking order tends to favor centrosymmetric modification. Importantly, two‐photon excited fluorescence has also been observed in the GaSe sheets. Our free‐energy calculations based on first‐principles methods support the observed nonlinear optical phenomena of the atomically thin layers.     

Revealing the Preferred Interlayer Orientations and Stackings of Two‐Dimensional Bilayer Gallium Selenide Crystals

Characterizing and controlling the interlayer orientations and stacking orders of two‐dimensional (2D) bilayer crystals and van der Waals (vdW) heterostructures is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) crystals that result from different layer stackings provide an ideal platform to study the stacking configurations in 2D bilayer crystals. Through a controllable vapor‐phase deposition method, bilayer GaSe crystals were selectively grown and their two preferred 0° or 60° interlayer rotations were investigated. The commensurate stacking configurations (AA′ and AB stacking) in as‐grown bilayer GaSe crystals are clearly observed at the atomic scale, and the Ga‐terminated edge structure was identified using scanning transmission electron microscopy. Theoretical analysis reveals that the energies of the interlayer coupling are responsible for the preferred orientations among the bilayer GaSe crystals.     

Si衬底上生长的铁硅化合物结构和取向分析

采用分子束外延法分别在650-920 ℃的Si（110）和920 ℃的Si（111）衬底表面生长出铁的硅化物纳米结构,并主要分析了920 ℃高温下纳米结构的形貌、组成相及其与Si 衬底的取向关系. 扫描隧道显微镜（STM）研究表明,920 ℃高温下,Si（110）衬底上生长的铁硅化合物完全以纳米线的形式存在,且其尺寸远大于650 ℃低温下外延生长的纳米线尺寸;Si（111）衬底上生长出三维岛和薄膜两种形貌的铁硅化合物,其中三维岛具有金属特性且直径约300 nm、高约155 nm,薄膜厚度约2 nm. 电子背散射衍射研究表明920 ℃高温下Si（110）衬底上生长的纳米线仅以β-FeSi₂的形式存在,且β-FeSi₂相与衬底之间存在唯一的取向关系：β-FeSi₂（101）//Si（111）;β-FeSi₂ [010]//Si[110];Si（111）衬底上生长的三维岛由六方晶系的Fe₂Si 相组成,Fe₂Si 属于164 空间群,晶胞常数为a=0.405 nm,c=0.509 nm;与衬底之间的取向关系为Fe₂Si（001）∥Si（111）和Fe₂Si[120]//Si[112].     

具有SiC缓冲层的Si衬底上直接沉积碳原子生长石墨烯

石墨烯是近年发现的一种新型多功能材料.在合适的衬底上制备石墨烯成为目前材料制备的一大挑战.本文利用分子束外延(MBE)设备,在Si 衬底上生长高质量的SiC 缓冲层,然后利用直接沉积C原子的方法生长石墨烯,并通过反射式高能电子衍射(RHEED)、拉曼(Raman)光谱和近边X 射线吸收精细结构谱(NEXAFS)等实验技术对不同衬底温度(800、900、1000、1100 °C)生长的薄膜进行结构表征.实验结果表明,在以上衬底温度下都能生长出具有乱层堆垛结构的石墨烯薄膜.当衬底温度升高时,碳原子的活性增强,其成键的能力也增大,从而使形成的石墨烯结晶质量提高.衬底温度为1000 °C时结晶质量最好.其原因可能是当衬底温度较低时,碳原子活性太低不足以形成有序的六方C-sp2环.但过高的衬底温度会使SiC 缓冲层的孔洞缺陷增加,衬底的Si 原子有可能获得足够的能量穿过SiC薄膜的孔洞扩散到衬底表面,与沉积的碳原子反应生成无序的SiC,这一方面会减弱石墨烯的生长,另一方面也会使石墨烯的结晶质量变差.     

Density Functional Theory Calculations Revealing Metal‐like Band Structures for Ultrathin Germanium (111) and (211) Surface Layers

To find out if germanium possesses facet‐dependent electrical‐conductivity properties, surface‐state density functional theory (DFT) calculations were performed on one to six layers of germanium (100), (110), (111), and (211) planes. Tunable Ge(100) and Ge(110) planes always present the same semiconducting band structure with a band gap of 0.67 eV expected of bulk germanium. In contrast, one, two, four, and five layers of Ge(111) and Ge(211) plane models show metal‐like band structures with continuous density of states (DOS) throughout the entire band. For three and six layers of Ge(111) and Ge(211) plane models, the normal semiconducting band structure was obtained. The plane layers with metal‐like band structures also show Ge−Ge bond‐length deviations and bond distortions, as well as significantly different 4s and 4p frontier‐orbital electron counts and relative percentages integrated over the valence and conduction bands from those of the semiconducting state. These differences should contribute to strikingly dissimilar band structures. The calculation results suggest the observation of facet‐dependent electrical‐conductivity properties of germanium materials; when making transistors from germanium, the facet effects with shrinking dimensions approaching 3 nm may also need to be considered.     

Si衬底上生长的铁硅化合物结构和取向分析

采用分子束外延法分别在650-920℃的Si(110)和920℃的Si(111)衬底表面生长出铁的硅化物纳米结构,并主要分析了920℃高温下纳米结构的形貌、组成相及其与Si衬底的取向关系.扫描隧道显微镜(STM)研究表明,920℃高温下,Si(110)衬底上生长的铁硅化合物完全以纳米线的形式存在,且其尺寸远大于650℃低温下外延生长的纳米线尺寸;Si(111)衬底上生长出三维岛和薄膜两种形貌的铁硅化合物,其中三维岛具有金属特性且直径约300 nm、高约155 nm,薄膜厚度约2 nm.电子背散射衍射研究表明920℃高温下Si(110)衬底上生长的纳米线仅以β-FeSi2的形式存在,且β-FeSi2相与衬底之间存在唯一的取向关系:β-FeSi2(101)//Si(11 1);β-FeSi2[010]//Si[110];Si(111)衬底上生长的三维岛由六方晶系的Fe2Si相组成,Fe2Si属于164空间群,晶胞常数为a=0.405 nm,c=0.509 nm;与衬底之间的取向关系为Fe2Si(001)∥Si(111)和Fe2Si[1 20]//Si[112].     

IV-VI semiconductor growth on silicon substrates and new mid-infrared laser fabrication methods

This paper reviews results from research conducted at the University of Oklahoma on the development of new IV-VI semiconductor (lead salt) epitaxial growth and laser fabrication procedures that can ultimately lead to dramatic increases in mid-IR laser operating temperatures. Work has focused on growth of IV-VI semiconductor laser structures on silicon substrates using buffer layers that contain BaF2. Recent experiments show that it is possible to obtain high crystalline quality IV-VI semiconductor layer structures on (111)-oriented silicon substrates using molecular beam epitaxy (MBE) or on (100)-oriented silicon using a combination of MBE and liquid phase epitaxy (LPE). Experimental data for IV-VI semiconductor layer structures grown on silicon substrates including crystalline quality information as determined by high resolution X-ray diffraction (HRXRD) measurements and absorption edge information as determined by Fourier transform infrared (FTIR) transmission measurements are presented. Results show that these materials can be used to fabricate lasers that cover the 3 microns (3333 cm-1) to 16 microns (625 cm-1) spectral range. Removal of IV-VI semiconductor laser structures from the silicon growth substrate by dissolving BaF2 buffer layers with water is also demonstrated. This allows epitaxially-grown laser structures to be sandwiched between two heat sinks with a minimum of thermally resistive IV-VI semiconductor material. Theoretical modeling predicts that IV-VI lasers fabricated this way will have maximum continuous wave (cw) operating temperatures at least 60 degrees higher than those of IV-VI lasers fabricated on PbSe or PbTe substrates.     

User-friendly methodology for chemical vapor deposition –grown graphene-layers transfer: Design and implementation

An ecofriendly wet-chemical methodology for the transfer of chemical vapor deposition–grown, two-dimensional (2D) graphene layers onto desired surfaces is proposed and demonstrated by transferring the graphene monolayers (GMLs) onto Si/SiO₂ substrates. The quality and purity of transferred graphene layers along with their uniformity and electrical characteristics were examined. Furthermore, the areal uniformity of the transferred layers is explored by fabricating the devices with a configuration of graphene/insulator/metal (GIM). The transferred GMLs over Si/SiO₂ substrates exhibited good uniformity with high chemical purity along with excellent electrical characteristics. The GIM-based devices fabricated over planar substrates showed high conductivity and low leakage current density. Based on these demonstrated outcomes, it is emphasized that the proposed methodology can be adopted for the transfer of any 2D materials irrespective of their size by avoiding chemical exposure and failure of the fabrication process that are the major hurdles in the conventional approach.     

PbTe(111)薄膜的分子束外延生长及其表面结构特性

采用分子束外延(MBE)方法在Ba F_2(111)衬底上直接外延生长了Pb Te薄膜。反射高能电子衍射(RHEED)实时监控的衍射图样揭示了Pb Te在Ba F_2(111)表面由三维生长向二维生长的变化过程。转动对称性的研究结合第一性原理密度泛函理论(DFT)的计算揭示了在富Pb及衬底温度(Tsub)为350°C的生长条件下,得到的Pb Te(111)薄膜具有稳定的(2×1)重构表面。Pb Te(111)-(2×1)表面覆盖Te膜后,通过300°C的退火处理,重构表面可完全复原,这为大气环境下Pb Te薄膜表面结构的保护提供了有效的方法。     

Control of microstructure and functional properties of PZT thin films via UV assisted pyrolysis

The influence of ultraviolet (UV) light during pyrolysis of sol-gel fabricated Pb(Zr_0.52Ti_0.48)O₃ thin films on (111)Pt/Ti/SiO₂/Si substrates has been investigated. The UV treated films show a homogeneous fine grain structure with (100) preferential orientation, whereas a bimodal grain structure and (111) preferential orientation were found for the untreated film. This is explained in terms of specific template layers formed during pyrolysis. The ferroelectric, dielectric and piezoelectric properties are also reported for both films. It is shown that while the ferroelectric properties are higher for the (111) films, the (100) films show better dielectric and piezoelectric properties with an effective piezoelectric coefficient, d _33eff, of 183 pm/V vs. 101.8 pm/V for the (111) films.     

MOF‐on‐MOF: Oriented Growth of Multiple Layered Thin Films of Metal–Organic Frameworks

The precise alignment of multiple layers of metal–organic framework (MOF) thin films, or MOF‐on‐MOF films, over macroscopic length scales is presented. The MOF‐on‐MOF films are fabricated by epitaxially matching the interface. The first MOF layer (Cu₂(BPDC)₂, BPDC=biphenyl‐4,4′‐dicarboxylate) is grown on an oriented Cu(OH)₂ film by a “one‐pot” approach. Aligned second (Cu₂(BDC)₂, BDC=benzene 1,4‐dicarboxylate, or Cu₂(BPYDC)₂, BPYDC=2,2′‐bipyridine‐5,5′‐dicarboxylate) MOF layers can be deposited using liquid‐phase epitaxy. The co‐orientation of the MOF films is confirmed by X‐ray diffraction. Importantly, our strategy allows for the synthesis of aligned MOF films, for example, Cu₂(BPYDC)₂, that cannot be grown on a Cu(OH)₂ surface. We show that aligned MOF films furnished with Ag nanoparticles show a unique anisotropic plasmon resonance. Our MOF‐on‐MOF approach expands the chemistry of heteroepitaxially oriented MOF films and provides a new toolbox for multifunctional porous coatings.     

Electron Probe Microanalysis of HfO2 Thin Films on Conductive and Insulating Substrates

Quantitative electron probe microanalysis of highly insulating materials is a complicated problem, partially solved by coating samples with grounded thin conductive layers or using novel scanning electron microscopy (SEM) techniques, such as low-voltage and/or variable pressure SEM. In this work, some problems of quantitative X-ray microanalysis of thin HfO₂ films, in particular the possibility to determine mass thickness correlated to the density of the layer material, are discussed. For comparison, Al₂O₃, Ta₂O₅ and TiO₂ films grown onto both semiconductive Si and insulating quartz substrates were also analysed. All the films studied were synthesized by atomic layer deposition method.     

单原子Ge助剂修饰Cu(111)晶面上CO2加氢制甲醇的机理研究

针对CO₂热催化转化制甲醇过程中CO₂吸附、活化较困难及副产物较多的问题,提出采用单原子Ge助剂修饰Cu(111)晶面的解决思路,通过密度泛函理论(DFT)计算研究了CO₂在Ge-Cu(111)晶面上加氢合成甲醇的反应机理。结果表明,单原子Ge助剂的电子调控增加了与其相邻的 Cu 原子的电子云密度,使 CO₂分子在含 Ge 活性界面上的吸附能力显著增强:CO₂在 Ge-Cu(111)晶面上的吸附能约为Cu(111)晶面的1.5倍,约为Pd改性Cu(111)晶面的2.4倍,进而使逆水煤气变换(RWGS)反应路径速控步骤的活化能降低了近 20 kJ·mol^-1,同时衍生出 3条生成甲醇的 RWGS新路径;此外,Ge-Cu(111)晶面上甲酸盐路径由于速控步骤活化能大幅上升而被禁阻,进而CO及烃类等副产物选择性大幅降低,Ge-Cu(111)晶面上CO₂加氢制甲醇选择性升高。     

单原子Ge助剂修饰Cu(111)晶面上CO2加氢制甲醇的机理研究

针对CO₂热催化转化制甲醇过程中CO₂吸附、活化较困难及副产物较多的问题,提出采用单原子Ge助剂修饰Cu (111)晶面的解决思路,通过密度泛函理论(DFT)计算研究了CO₂在Ge-Cu(111)晶面上加氢合成甲醇的反应机理。结果表明,单原子Ge助剂的电子调控增加了与其相邻的Cu原子的电子云密度,使CO₂分子在含Ge活性界面上的吸附能力显著增强：CO₂在Ge-Cu(111)晶面上的吸附能约为Cu (111)晶面的1.5倍,约为Pd改性Cu(111)晶面的2.4倍,进而使逆水煤气变换(RWGS)反应路径速控步骤的活化能降低了近20 kJ·mol^-1,同时衍生出3条生成甲醇的RWGS新路径;此外,Ge-Cu(111)晶面上甲酸盐路径由于速控步骤活化能大幅上升而被禁阻,进而CO及烃类等副产物选择性大幅降低,Ge-Cu(111)晶面上CO₂加氢制甲醇选择性升高。     

Hard X-ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces

We present a study of buried GaP/Si(001) heterointerfaces by hard X-ray photoelectron spectroscopy. Well-defined thin (4–50 nm) GaP films were grown on Si(001) substrates with 2° miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested.     

预沉积Ge对Si(111)衬底上SSMBE外延生长SiC薄膜的影响

利用固源分子束外延(SSMBE)生长技术, 在Si(111)衬底上预沉积不同厚度(0、0.2、1 nm)Ge, 在衬底温度900 ℃, 生长SiC单晶薄膜. 利用反射式高能电子衍射仪(RHEED)、原子力显微镜(AFM)和傅立叶变换红外光谱(FTIR)等实验技术, 对生长的样品进行了研究. 结果表明, 预沉积少量Ge(0.2 nm)的样品, SiC薄膜表面没有孔洞存在, AFM显示表面比较平整, 粗糙度比较小, FTIR结果表明薄膜内应力比较小. 这说明少量Ge的预沉积抑制了孔洞的形成, 避免衬底Si扩散, 因而SiC薄膜的质量比较好. 没有预沉积Ge的薄膜, 结晶质量比较差, SiC薄膜表面有孔洞且有Si存在. 然而预沉积过量Ge (1 nm) 的样品, 由于Ge的岛状生长,导致生长的SiC表面粗糙度变大, 结晶质量变差, 甚至导致多晶产生.     

Dynamic structural changes at LiMn2O4/electrolyte interface during lithium battery reaction

Gaining a thorough understanding of the reactions on the electrode surfaces of lithium batteries is critical for designing new electrode materials suitable for high-power, long-life operation. A technique for directly observing surface structural changes has been developed that employs an epitaxial LiMn(2)O(4) thin-film model electrode and surface X-ray diffraction (SXRD). Epitaxial LiMn(2)O(4) thin films with restricted lattice planes (111) and (110) are grown on SrTiO(3) substrates by pulsed laser deposition. In situ SXRD studies have revealed dynamic structural changes that reduce the atomic symmetry at the electrode surface during the initial electrochemical reaction. The surface structural changes commence with the formation of an electric double layer, which is followed by surface reconstruction when a voltage is applied in the first charge process. Transmission electron microscopy images after 10 cycles confirm the formation of a solid electrolyte interface (SEI) layer on both the (111) and (110) surfaces and Mn dissolution from the (110) surface. The (111) surface is more stable than the (110) surface. The electrode stability of LiMn(2)O(4) depends on the reaction rate of SEI formation and the stability of the reconstructed surface structure.     

Thermochemical Properties and Vapor Growth of Hg1-xCdx Te on CdTe

Based on a thermodynamic analysis, the vapor phase of the Hg_1-xCd_xTe—HgI₂—CdTe epitaxy system consists predominantly of Hg(g) and HgI₂(g) through which nutrient species migrate from the source to the CdTe substrate. Growth experiments in the 590° → 535°C temperature gradient showed that Hg_1-xCd_xTe layers can be grown on CdTe substrates using a preannealed, ternary source material in the presence of HgI₂.     

Highly rectified ion transport through 2D WSe2/MoS2 bi-layered membranes

Through a two-step vacuum-filtration process, WSe₂ and MoS₂ nanosheets were sequentially deposited onto a polymeric nanoporous support, forming WSe₂/MoS₂ bi-layered heterostructure. Highly rectified ion transport phenomenon is observed through the heterogeneous 2D layered membranes.