镨和镱掺杂Ba2SiO4∶Eu^2＋荧光材料的合成与发光性能

采用高温固相反应法分别合成了变价稀土镨和镱离子掺杂的绿色荧光粉[Ba（2-n-1.5x）REx]SiO4∶nEu^2＋（n=0.03,RE=Pr,Yb;x=0,0.02,0.05,0.10）。结果表明：所有合成荧光粉的激发峰均为250-400 nm的宽峰,与近紫外LED的发射光波长相匹配。发射峰位于450-550 nm之间,是Eu2＋的5d-4f跃迁的典型发射。Pr^3＋和Yb3＋的掺入并未改变Ba2SiO4∶Eu^2＋的相组成,但对荧光强度的影响大,且与掺杂元素、掺杂量和煅烧温度相关。当掺杂Pr^3＋和Yb3＋的量为x=0.02时,经1150℃煅烧所得荧光粉的发光强度分别是未掺杂时的595%和168%。证明三价稀土离子掺杂可以导致基质中的电荷缺陷而敏化Eu^2＋离子的发光,而变价稀土离子的掺杂可以大大提高电荷缺陷,导致荧光强度的进一步提高。     

Zn2SiO4基体掺杂稀土离子纳米粉体的制备和光谱特性

采用sol-gel法在Zn2SiO4基体中掺杂稀土离子Eu^3 和Y，制备了Zn2SiO4:Eu及Zn2SiO4:Eu,Y纳米粉体，研究不同稀土离子浓度对荧光强度的影响，并采用热重－差热分析，X射线粉末衍射，荧光光谱分析等技术手段进行表征，目标产物的平均粒径分别为31nm和27nm。     

空气中合成固溶体荧光粉Ba_2(Zn,Mg)Si_2O_7∶Eu~(2+),Eu~(3+),Ce~(3+)及其发光特性

采用高温固相法在空气中合成了Ba1.97-yZn1-xMgxSi2O7∶0.03Eu,y Ce3+系列荧光粉。分别采用X-射线衍射和荧光光谱对所合成荧光粉的物相和发光性质进行了表征。在紫外光330~360 nm激发下,固溶体荧光粉Ba1.97-yZn1-xMgxSi2O7∶0.03Eu的发射光谱在350~725 nm范围内呈现多谱峰发射,360和500 nm处有强的宽带发射属于Eu2+离子的4f 65d1-4f 7跃迁,590~725 nm红光区窄带谱源于Eu3+的5D0-7FJ(J=1,2,3,4)跃迁,这表明,在空气气氛中,部分Eu3+在Ba1.97-yZn1-xMgxSi2O7基质中被还原成了Eu2+;当x=0.1时,荧光粉Ba1.97Zn0.9Mg0.1Si2O7∶0.03Eu的绿色发光最强,表明Eu3+被还原成Eu2+离子的程度最大。当共掺入Ce3+离子后,形成Ba1.97-yZn0.9Mg0.1Si2O7∶0.03Eu,y Ce3+荧光粉体系,其发光随着Ce3+离子浓度的增大由蓝绿区经白光区到达橙红区;发现名义组成为Ba1.96Zn0.9Mg0.1Si2O7∶0.03Eu,0.01Ce3+的荧光粉的色坐标为(0.323,0.311),接近理想白光,是一种有潜在应用价值的白光荧光粉。讨论了稀土离子在Ba2Zn0.9Mg0.1Si2O7基质中的能量传递与发光机理。     

Sr2SiO4:Eu3+发光材料的制备及其光谱特性

采用溶胶-凝胶法制备了Sr2SiO4:Eu3+发光材料. 测量了Sr2SiO4:Eu3+材料的激发与发射光谱, 发射光谱主峰位于618 nm处;监测618 nm发射峰时, 所得激发光谱主峰分别为320、397、464 和518 nm. 研究了Sr2SiO4:Eu3+材料在618 nm的主发射峰强度随Eu3+浓度的变化情况. 结果显示, 随Eu3+浓度的增大, 发射峰强度先增大; 当Eu3+浓度为7%时(x), 峰值强度最大; 而后随Eu3+浓度的增大, 峰值强度减小. 在Eu3+浓度为7%的情况下, 研究了电荷补偿剂Li+的掺杂浓度(x(Li+))对Sr2SiO4:Eu3+材料发射光谱强度的影响. 结果显示, 随x(Li+)的增大, 材料发射光谱强度先增大后减小, 当x(Li+)为8%时, 峰值强度最大.     

纳米荧光粉Eu_(0.12)Y_(1.88-x)Mg_xO_(3-δ)的光致发光特性

使用超声波作用下的均匀沉淀法,制备了掺杂Mg2+的纳米荧光粉Y2O3:Eu3+.考察了不同Mg2+掺杂含量下Eu0.12Y1.88-xMgxO3-δ(x=0～0.18,δ代表氧空位)的晶格常数变化,研究了掺杂含量对样品发射光谱及激发光谱的影响.结果表明,Eu0.12Y1.88-xMgxO3-δ的晶格常数在1.0604～1.062 3 nm之间,晶粒尺寸在25.9～40.7 nm之间.掺杂Mg2+后,当x=0.14时,样品Eu0.12Y1.74Mg0.14O3-δ的激发光谱中电荷迁移带(CTS)最大峰强度最高且色纯度最好.     

Eu2+/Mn2+激活的M3MgSi2O8-M2SiO4(M=Ba,Ca)荧光粉的发光特性

采用高温固相法制备了Eu2+/Mn2+单激活和共激活的M3MgSi2O8-M2SiO4(M=Ba,Ca)两相荧光粉.通过X射线衍射(XRD)和荧光光谱(PL)对样品材料的晶体结构和光谱性能进行了表征.XRD测试结果表明所合成的样品具有M3MgSi2O8和M2SiO4两种晶相结构.PL测试显示,Eu2+在Ba3MgSi2O8-Ba2SiO4体系中发射442和502nm两个波带的光;而Eu2+在Ca2+部分取代Ba2+的BaCa2MgSi2O8-Ba1.31Ca0.69SiO4体系中发射420～520nm的连续波带,并且激发光谱向长波扩展,更加适用于被InGaN芯片(395 nm)激发.通过改变Mn2+的掺杂量可制得颜色可调的BaCa2MgSi2O8-Ba1.31Ca0.69SiO4:Eu2+,Mn2+白光荧光粉.     

Li2Sr0.995-xSiO4:0.005Eu2+,xLa3+荧光粉的晶体结构与发光特性

采用高温固相反应法在还原气氛下制备了Li2Sr0.995-x SiO4:0.005Eu2+,xLa3+荧光粉。利用X射线衍射仪、荧光光谱仪和紫外可见分光光度计对样品的晶体结构、激发光谱、发射光谱与荧光衰减寿命以及漫反射光谱进行测试分析。实验结果表明:所制得的样品为单一相的Li2SrSiO4晶体结构化合物。Li2Sr0.995-x SiO4:0.005Eu2+,xLa3+荧光粉的激发光谱均呈现出宽激发带,其中最强的激发峰位于408 nm左右。在此波长激发下可得到峰值位于570 nm左右的宽波段单峰发射光谱,其对应于Eu2+离子4f65d1→4f7电子跃迁。La3+掺杂Li2SrSiO4:Eu2+荧光粉基质产生了晶格缺陷[2La·Sr·V″Sr],其可以吸收光能并将能量传递给发光中心离子Eu2+,进而增强Li2Sr0.995SiO4:0.005Eu2+荧光粉的发光强度。漫反射光谱和荧光衰减寿命测试结果也证实La3+掺杂能够增加Eu2+的激发态吸收能量,延长发光中心Eu2+离子荧光衰减寿命。     

白光LED用荧光材料Ba3 Gd( BO3 )3:Eu3+的发光性能研究

用高温固相反应法制备了稀土离子Eu3+ 掺杂的三元稀土硼酸盐Ba3Gd(BO3)3发光材料, 通过X射线衍射 (XRD) 、荧光光谱和扫描电镜 (SEM) 等测试手段对Ba3Gd(BO3)3:Eu3+ 荧光粉的制备条件、发光性能以及形貌进行了研究. XRD结果表明, 在1000 ℃时可得到Ba3Gd(BO3)3 纯相. 扫描电镜照片显示颗粒基本为球形, 粒径约为200～400 nm. 发光光谱测试表明, Ba3Gd(BO3)3:Eu3+荧光粉在近紫外区(UV) (396 nm)和蓝光区(466 nm)可以被有效地激发, 分别用255和396 nm的紫外光激发样品时, 以Eu3+ 的 5D0-7F2 (611和616 nm) 超灵敏跃迁为主要发射峰. 当Eu3+的掺杂浓度为10%(摩尔分数)时, Ba3Gd(BO3)3:Eu3+ 在611和616 nm处的发光强度最大. 因此, 这种荧光粉是一种可能应用在白光LED上的红色荧光材料.     

KSrBP2O8:RE(RE=Eu2+,Tb3+,Eu3+)荧光粉的制备与发光性能研究

采用高温固相反应法制备了KSrBP2O8:RE(RE=Eu2+,Tb3+,Eu3+)系列荧光粉。利用X射线衍射仪对样品的物相结构进行了分析,结果表明:稀土离子的掺入没有改变荧光粉的主晶相。利用荧光光谱仪对样品的发光性能进行了测试,发现在近紫外光激发下掺杂Eu2+离子的样品具有宽带发射峰,最强发射位于450 nm左右,对应于Eu2+离子的4f65d1→4f7辐射跃迁。随着Eu2+掺杂量的增加,发射光从蓝光逐渐转变到蓝白光。另外,KSrBP2O8:Tb3+和KSrBP2O8:Eu3+能够在近紫外光激发下分别发射出绿光和红光,其最佳掺杂浓度分别为0.04%和0.08%(摩尔分数)。     

红色长余辉荧光粉Ca_2Zn_4Ti_(16)O_(38)∶Pr~(3+)的水热辅助合成及发光性质

采用水热法辅助合成了纯相Ca2Zn4Ti16O38∶Pr3+荧光粉,初始nCa∶nZn∶nTi=2∶4.1∶15,煅烧条件为1 050℃空气气氛烧结5 h。并以X射线衍射、扫描电镜、紫外可见漫反射光谱和荧光光谱表征了样品的物相组成、微观形貌和光谱性质。合成的荧光粉在高温煅烧后仍较好地保持了球形的微观形态,优化的Pr3+掺杂浓度为0.015。Ca2Zn4Ti16O38∶Pr3+荧光粉在471 nm波长激发下发射红光,发射谱通过高斯分峰拟合得到位于605、620和645 nm的3个发射峰,分别对应于Pr3+的1D2→3H4,3P0→3H6和3P0→3F2跃迁。在471 nm波长激发下,Ca2Zn4Ti16O38∶Pr3+的614 nm红光发射表现出超长余辉特性,表明该荧光粉是一种能被可见光有效激发的红色长余辉荧光粉。     

Sc2MgGa2 and Y2MgGa2

Scandium magnesium gallide, Sc₂MgGa₂, and yttrium magnesium gallide, Y₂MgGa₂, were synthesized from the corresponding elements by heating under an argon atmosphere in an induction furnace. These intermetallic compounds crystallize in the tetragonal Mo₂FeB₂‐type structure. All three crystallographically unique atoms occupy special positions and the site symmetries of (Sc/Y, Ga) and Mg are m2m and 4/m, respectively. The coordinations around Sc/Y, Mg and Ga are pentagonal (Sc/Y), tetragonal (Mg) and triangular (Ga) prisms, with four (Mg) or three (Ga) additional capping atoms leading to the coordination numbers [10], [8+4] and [6+3], respectively. The crystal structure of Sc₂MgGa₂ was determined from single‐crystal diffraction intensities and the isostructural Y₂MgGa₂ was identified from powder diffraction data.     

Substituted 2-methyl- and 2-methyleneindolines. 2. Nitro- and amino-substituted 2-methyl- and 2-methylene-indolines

From 5- and 6-aminotetramethylindolines, 2-methyleneindolines have been synthesized; these compounds can be condensed with other heterocyclic systems. The nitration of 1,2,3,3-tetramethylindoline under different conditions was studied.For communication 1, see [1].Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 7, pp. 919–923, July, 1989.     

Structure and properties of single crystalline CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2

Single crystals of CaMg(2)Bi(2), EuMg(2)Bi(2), and YbMg(2)Bi(2) were obtained from a Mg-Bi flux cooled to 650 °C. These materials crystallize in the CaAl(2)Si(2) structure-type (P ?3m1, No. 164), and crystal structures are reported from refinements of single crystal and powder X-ray diffraction data. EuMg(2)Bi(2) displays an antiferromagnetic transition near 7 K, which is observed via electrical resistivity, magnetization, and specific heat capacity measurements. Magnetization measurements on YbMg(2)Bi(2) reveal a weak diamagnetic moment consistent with divalent Yb. Despite charge-balanced empirical formulas, all three compounds are p-type conductors with Hall carrier concentrations of 2.0(3) × 10(19) cm(-3) for CaMg(2)Bi(2), 1.7(1) × 10(19) cm(-3) for EuMg(2)Bi(2), and 4.6(7) × 10(19) cm(-3) for YbMg(2)Bi(2), which are independent of temperature to 5 K. The electrical resistivity decreases with decreasing temperature and the resistivity ratios ρ(300 K)/ρ(10 K) ≤ 1.6 in all cases, indicating significant defect scattering.     

Homopolymerization of 2-alkyl- and 2-aryl-2-oxazolines

2-Aryl- and 2-alkyl-2-oxazolines have been polymerized to poly-(N-aroyl)aziridines and poly(N-acyl)aziridines, respectively, in the presence of boron trifluoride. The polymers obtained were glassy, light yellow resins with molecular weights ranging from 3500 to 7500 (35–50 oxazoline units per chain). The polymerization rates have been determined for several of these monomers. A polymerization mechanism is proposed.     

The alkali hypophosphites KH2PO2, RbH2PO2 and CsH2PO2

The structures of the hypophosphites KH₂PO₂ (potassium hypophosphite), RbH₂PO₂ (rubidium hypophosphite) and CsH₂PO₂ (caesium hypophosphite) have been determined by single‐crystal X‐ray diffraction. The structures consist of layers of alkali cations and hypophosphite anions, with the latter bridging four cations within the same layer. The Rb and Cs hypophosphites are isomorphous.