C(膜)/Si(SiO2 )(纳米微粒)/C(膜)热处理的形态及结构分析

用直流辉光溅射+真空镀膜法制备了一种新型结构的硅基纳米发光材料- C(膜)/Si(SiO2)(纳米微粒)/C(膜)夹层膜,并对其进行了退火处理.用TEM、 SEM、 XRD和XPS对其进行了形态结构分析.TEM观察表明: Si(SiO2)纳米微粒基本呈球形,粒径在30 nm左右.SEM观察表明: 夹层膜样品总厚度约为50 μm,膜表面比较平整、致密.400℃退火后,样品表面变得凹凸不平,出现孔状结构; 650℃退火后,样品表面最平整、致密且颗粒均匀.XRD分析表明:制备出的夹层膜主要由SiO2和Si组成,在C原子的还原作用和氧气的氧化作用的共同作用下, SiO2和Si的含量随加热温度的升高而呈现交替变化: 400℃时, C的还原作用占主导地位, SiO2几乎全部被还原成了Si,此时Si含量最高; 400～650℃时,氧化作用占主导地位, Si又被氧化成SiO2, Si含量降低, SiO2含量逐渐上升,在650℃达到最高.XPS分析表明: 在加热过程中, C原子逐渐扩散进入Si(SiO2)微粒层,在650℃与Si反应生成了新的SiC.     

无机盐溶液源溶胶-凝胶法制备锶铋钽铁电陶瓷薄膜过程研究

采用可溶性无机盐Sr(NO₃)₂,Bi(NO₃)₃及HTaF6为原料,以柠檬酸、乙二醇及乙二胺四乙酸(EDTA)为络合剂,利用溶胶-凝胶旋转涂覆工艺,分别在Al₂O₃和Pt/Ti/SiO₂/Si的衬底上制备了SrBi₂Ta₂O₉(SBT)铁电陶瓷薄膜.采用SEM,XRD及FTIR等微观分析手段,对制备的SBT溶胶与薄膜过程机理进行了实验研究.结果表明,由无机盐溶液原料络合合成SBT溶胶是此方法制膜的关键,其中络合剂的种类、用量和pH值的控制等是重要的影响因素.制备了相组成均一、薄膜表面致密、均匀、无开裂、晶粒尺寸为150nm的多晶膜,获得了剩余极化(2P_r)与矫顽电场强度(2E_c)分别为9.6μC/cm²与76kV/cm铁电性能较好的薄膜材料.     

Preparation and Magnetic Properties of Submicron CrO2 Thin Film on Poly-crystal TiO2 Film

The submicron chromium dioxide(CrO₂) thin film was fabricated on a poly-crystal titania(TiO₂) film using Si wafers as substrates by atmospheric pressure chemical vapor deposition(CVD) method. X-Ray diffraction patterns show that the CrO₂ films were pure rutile structure. Scanning electron microscopy(SEM) images indicate that the CrO₂ films consisted of submicron grains with a grain size of 250―750 nm. The magnetic researches reveal that the magnetic easy axis is parallel to the films, and at room temperature, the CrO₂ films show linear magnetoresistance.     

Recent advances in characterization of CaCu3Ti4O12 thin films by spectroscopic ellipsometric metrology

CaCu3Ti4O12 (CCTO) thin films were successfully grown on LaAlO3(100) and Pt/TiO2/SiO2/Si(100) substrates by a novel MOCVD approach. Epitaxial CCTO(001) thin films have been obtained on LaAlO3(100) substrates, while polycrystalline CCTO films have been grown on Pt/TiO2/SiO2/Si(100) substrates. Surface morphology and grain size of the different nanostructured deposited films were examined by AFM, and spectroscopic ellipsometry has been used to investigate the electronic part of the dielectric constant (epsilon2). Looking at the epsilon2 curves, it can be seen that by increasing the film structural order, a greater dielectric response has been obtained. The measured dielectric properties accounted for the ratio between grain volumes and grain boundary areas, which is very different in the different structured films.     

纳米二氧化钒薄膜的制备及红外光学性能

采用双离子束溅射方法在Si3N4/SiO2/Si基底表面沉积氧化钒薄膜, 在氮气气氛下热处理获得二氧化钒薄膜. 利用X射线衍射(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱(XPS)研究了热处理温度对氧化钒薄膜晶体结构、表面形貌和组分的影响, 利用傅里叶变换红外光谱(FT-IR)对二氧化钒薄膜的红外透射性能进行了测试分析. 结果表明, 所制备的氧化钒薄膜以非晶态V2O5和四方金红石结构VO2为主, 经400 ℃、2 h热处理后获得了(011)择优取向的单斜金红石结构纳米VO2薄膜, 提高热处理温度至450 ℃, 纳米结构VO2薄膜的晶粒尺寸减小. FT-IR结果显示,纳米VO2薄膜透射率对比因子超过0.99, 高温关闭状态下透射率接近0. 小晶粒尺寸纳米VO2薄膜更适合在热光开关器件领域应用.     

Direct precursor conversion reaction for densely packed Ag2S nanocrystal thin films

Successful realization of highly crystalline and densely packed Ag2S nanocrystal (NC) films has been achieved by directly converting precursor molecules, Ag(SCOPh), on preheated substrates. When an aliquot of Ag(SCOPh) solution dissolved in trioctylphosphine (TOP) is applied on preheated solid substrates at 160 degrees C, such as SiO2/Si, H-terminated Si, and quartz. Ag2S NC thin films have been formed with instant phase and color changes of the precursor solutions from pale yellow homogeneous solution to black solid films. The average diameter of individual Ag2S NCs forming thin films is ca. 25 nm, as confirmed by examining both isolated Ag2S NCs from thin films and as-made thin film samples by using transmission electron microscopy (TEM) and scanning electron microscopy (SEM), respectively. Powder X-ray diffraction (XRD) pattern shows that the synthesized Ag2S NCs have well-defined monoclinic acanthite phase. Direct precursor conversion process has resulted in densely packed Ag2S NCs with reduced interparticle distances owing to efficient removal of TOP during the reaction. Compared to the devices fabricated by the drop-coating process, Ag2S thin film devices fabricated by direct precursor conversion process have shown a ca. 300-fold increased conductance. Such Ag2S NC devices have also displayed reliable photoresponses upon white light illumination with high photosensitivity (S approximately equal to 1).     

Characterization of silver selenide thin films grown on Cr‐covered Si substrates

Thermal stability of silver selenide thin films formed from the solid‐state reaction of Ag‐Se diffusion couples on Si substrates covered with a thin Cr film, is investigated. Glancing angle X‐ray diffraction (GXRD), XPS, atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS) are used to characterize the as‐deposited films and those annealed at 100, 200, 300, and 400 °C. The results reveal the formation of polycrystalline orthorhombic silver selenide films that remain stable without compositional change upon thermal annealing, in marked contrast to the agglomeration exhibited by silver selenide films deposited on Si without Cr film. The improvement in the thermal stability is attributed to compressive stress relief by a grainy morphology with large surface area, the formation of which is promoted by partially oxidized Cr adhesion film. Copyright © 2008 John Wiley & Sons, Ltd.     

电沉积-烧结法制备Y2O3:Eu荧光薄膜的研究

平板显示是显示技术发展的方向,发光材料的薄膜化是显示技术发展的重要研究对象.本研究采用电沉积-烧结方法制备出了氧化钇铕红色荧光薄膜.在0.1 mol/L硝酸钇溶液中加入4%(摩尔分数)0.1 mol/L硝酸铕掺杂,用三电极体系进行阴极电沉积,工作电极的电位为-1.2 V(相对于Ag/AgCl电极),温度65℃,沉积时间为400 s,500℃灼烧2 h,制备出的发光薄膜与高温固相法制备的薄膜对比,其发射光谱的峰位相同.XRD检测显示经不同温度灼烧后,随温度的升高,氧化钇晶相逐渐完整.经SEM扫描,薄膜沉积均匀平整.     

Oriented SrFe12O19 thin films prepared by chemical solution deposition

Thin films of SrFe₁₂O₁₉ (SrM) were prepared from a solution of iron and strontium alkoxides through the chemical solution deposition method on both amorphous (glassy SiO₂), and single crystal substrates (Si(100), Si(111), Ag(111), Al₂O₃(001), MgO(111), MgAl₂O₄(111), SrTiO₃(111)) substrates. The process of crystallization was investigated by means of powder diffraction, atomic force microscopy and scanning electron microscopy. Magnetization measurements, ferromagnetic and nuclear magnetic resonance were used for evaluation of anisotropy in the films. Whilst amorphous substrates enabled growth of randomly oriented SrM phase, use of single crystal substrates resulted in samples with different degree of oriented growth. The most pronounced oriented growth was observed on SrTiO₃(111). A detailed inspection revealed that growth of SrM phase starts through the breakup of initially continuous film into isolated grains with expressive shape anisotropy and hexagonal habit. A continuous film with epitaxial relations to the substrate was produced by repeating recoating and annealing.     

Polarization-controlled leakage current and photovoltaic effect in highly preferentially oriented BiFeO3 film

Highly preferentially oriented polycrystalline BiFeO₃ thin film was grown on FTO/glass substrate by a sol–gel method annealed at 500 °C. XRD result showed that the film adopts highly (100) preferential orientation. SEM results indicate that the film is composed of large grains of 40–200 nm and the thickness is about 320 nm. Room temperature saturated polarization and large Pr ~55 μC/cm² were obtained. Leakage current was substantially reduced by the controlling of ferroelectric polarization. Polarization-modulated conduction mechanism was studied. Moreover, substantial photovoltaic effect was observed.     

Barium Sodium Niobate Powders and Thin Films: Preparation and Ferroelectric Behavior

Powders and thin films of barium sodium niobate, Ba₄Na₂Nb₁₀O₃₀, of filled tungsten bronze type ferroelectric were processed by a sol-gel route using barium metal, niobium ethoxide and sodium methoxide as precursors. Polycrystalline powder resulted after heat treating the gel powder at or above 650°C. Thin films of Ba₄Na₂Nb₁₀O₃₀ showed no preferred orientation on Si(100), Pt/Si(100) and sapphire substrates. Hysteresis measurements at 1 kHz for the thin films annealed at 750°C, obtained using a prehydrolyzed precursor solution, and gave remanent polarization of 17.34 µC/cm² and coercive field of 62.5 kV/cm. Microstructural investigation of surface morphology of these films revealed grains about 0.3 µm in size. Prehydrolysis of the precursor solution was found to be necessary to achieve dense films with ferroelectric properties.     

Influences on the rotated structure of diiron dithiolate complexes: electronic asymmetry vs. secondary coordination sphere interaction

In the pursuit of a "rotated" structure, and exploration of the influence of the aza nitrogen lone pair, the Fe(I)Fe(I) model complexes wherein two Fe(CO)(3-x)P(x) moieties are significantly twisted from the ideal configuration (torsion angle >30°) are reported. [Fe(2)(μ-S(CH(2))(2)N(i)Pr(X)(CH(2))(2)S)(CO)(4)(κ(2)-dppe)](2)(2+) (X = H, 4; Me, 5) prepared from protonation and methylation, respectively, of [Fe(2)(μ-S(CH(2))(2)N(i)Pr(CH(2))(2)S)(CO)(4)(κ(2)-dppe)](2), 1, possess Φ angles of 34.1 and 35.4° (av.), respectively. Such dramatic twist is attributed to asymmetric substitution within the Fe(2) unit in which a dppe ligand is coordinated to one Fe site in the κ(2)-mode. In the presence of the N···C(CO(ap)) interaction, the torsion angle is decreased to 10.8°, suggesting availability of lone pairs of the aza nitrogen sites within 1 is in control of the twist. Backbones of the bridging diphosphine ligands also affect distortion. For a shorter ligand, the more compact structure of [Fe(2)(μ-S(CH(2))(2)N(i)Pr(CH(2))(2)S)(μ-dppm)(CO)(4)](2), 7, is formed. Dppm in a bridging manner allows achievement of the nearly eclipsed configuration. In contrast, dppe in [Fe(2)(μ-S(CH(2))(2)N(i)Pr(CH(2))(2)S)(μ-dppe)(CO)(4)](2), 6, could twist the Fe(CO)(3-x)L(x) fragment to adopt the least strained structure. In addition, the NC(CO(ap)) interaction would direct the twist towards a specific direction for the closer contact. In return, the shorter N···C(CO(ap)) distance of 3.721(7) ? and larger Φ angle of 26.5° are obtained in 6. For comparison, 3.987(7) ? and 3.9° of the corresponding parameters are observed in 7. Conversion of (μ-dppe)[Fe(2)(μ-S(CH(2))(2)N(i)Pr(CH(2))(2)S)(CO)(5)](2), 2, to complex 1 via an associative mechanism is studied.     

Crystallization of textured PbTiO3 films deposited from gels

Sol-gel processed PbTiO₃ thin films have been deposited by spin coating onto different subtrates; Si[111], Si/Al, Si/SiO₂/Cr/Pt, MgO[100], SrTiO₃[100] and sapphire. Interactions between the substrate and PbTiO₃ films after heat treatment have been studied by X-ray diffraction and Rutherford Back Scattering. When deposited onto sapphire and Si[111], PbTiO₃ films exhibit a preferred orientation with (101) perpendicular to the substrate. These films become oriented along (100) onto MgO and (001) onto SrTiO₃[100] substrates. A strong channelling effect is observed by the RBS technique when the film is oriented along the c axis on SrTiO₃[100] suggesting that these films are epitaxially grown. The diffusion of metal atoms during the thermal treatment gives rise to the formation of lead silicate on Si[111] substrates. As a result a pyrochlore phase is formed. Lead titanate films on Si/SiO₂/Cr/Pt and Si/Al substrates are polycrystalline and do not exhibit any texture.     

中温固体氧化物燃料电池LaNi0.6Fe0.4O3-δ阴极材料的制备及性能表征

以硝酸镧、硝酸镍和硝酸铁为原料,柠檬酸作燃料低温燃烧合成固体氧化物燃料电池阴极材料LaNi0.6Fe0.4O3-δ.X射线衍射（XRD）图谱显示,600℃煅烧可形成单一的LaNi0.6 Fe0.4 O3-δ钙钛矿相.电子显微镜（TEM和SEM）照片看出,其颗粒尺寸〈100 nm.电池交流阻抗谱图表明,在1050℃烧结制...     

预沉积Ge对Si(111)衬底上SSMBE外延生长SiC薄膜的影响

利用固源分子束外延(SSMBE)生长技术, 在Si(111)衬底上预沉积不同厚度(0、0.2、1 nm)Ge, 在衬底温度900 ℃, 生长SiC单晶薄膜. 利用反射式高能电子衍射仪(RHEED)、原子力显微镜(AFM)和傅立叶变换红外光谱(FTIR)等实验技术, 对生长的样品进行了研究. 结果表明, 预沉积少量Ge(0.2 nm)的样品, SiC薄膜表面没有孔洞存在, AFM显示表面比较平整, 粗糙度比较小, FTIR结果表明薄膜内应力比较小. 这说明少量Ge的预沉积抑制了孔洞的形成, 避免衬底Si扩散, 因而SiC薄膜的质量比较好. 没有预沉积Ge的薄膜, 结晶质量比较差, SiC薄膜表面有孔洞且有Si存在. 然而预沉积过量Ge (1 nm) 的样品, 由于Ge的岛状生长,导致生长的SiC表面粗糙度变大, 结晶质量变差, 甚至导致多晶产生.     

Variation of lattice dimensions in epitaxial SnS films on MgO(001)

Epitaxial and polycrystalline SnS films were prepared on MgO(001) and glass substrates using molecular beam epitaxy. The films were characterized by X-ray diffraction method. The orientations of epitaxial films were (010)[100]SnS||(001)[100]MgO or (010)[001]SnS||(001)[100]MgO. Lattice parameters of the polycrystalline film closely resembled those of bulk SnS at room temperature. However, the lattice parameters of epitaxial films varied widely and were very different from those of bulk SnS at room temperature. Considering the lattice dimensions and a/c ratio, the films roughly correspond to bulk SnS at elevated temperatures from 371 to 666 K. SEM images of the films showed needle- or circular-like SnS crystallites segregated from the epitaxial films. Respective energies of indirect band gaps of the films and refractive index of the polycrystalline film were estimated using results of optical transmission experiments.     

Fe3+-TiO2/SiO2薄膜催化剂的结构对其光催化性能影响

以硅胶为载体,采用溶胶-凝胶法制备了掺杂不同量Fe3+的TiO2光催化剂(Fe3+-TiO2/SiO2),以氙灯为光源,罗丹明B为目标降解物,对其光催化活性进行了研究.结果表明,Fe3+-TiO2/SiO2比TiO2纳米粉有更好的催化活性,Fe3+的最佳掺入量为0.03％.罗丹明B在粉体和膜催化剂的作用下遵循不同的光催化反应机理.根据XRD,SEM,Raman,XPS和FTIR的表征结果可认为,TiO2在SIO2表面薄膜化和Ti-O-Si键的形成是催化活性提高和降解机理不同的主要原因.     

Synthetic and structural investigations of linear and macrocyclic nickel/iron/sulfur cluster complexes

Three series of new Ni/Fe/S cluster complexes have been prepared and structurally characterized. One series of such complexes includes the linear type of (diphosphine)Ni-bridged double-butterfly Fe/S complexes [(μ-RS)(μ-S═CS)Fe(2)(CO)(6)](2)[Ni(diphosphine)] (1-6; R = Et, t-Bu, n-Bu, Ph; diphosphine = dppv, dppe, dppb), which were prepared by reactions of monoanions [(μ-RS)(μ-CO)Fe(2)(CO)(6)](-) (generated in situ from Fe(3)(CO)(12), Et(3)N, and RSH) with excess CS(2), followed by treatment of the resulting monoanions [(μ-RS)(μ-S═CS)Fe(2)(CO)(6)](-)with (diphosphine)NiCl(2). The second series consists of the macrocyclic type of (diphosphine)Ni-bridged double-butterfly Fe/S complexes [μ-S(CH(2))(4)S-μ][(μ-S═CS)Fe(2)(CO)(6)](2)[Ni(diphosphine)] (7-9; diphosphine = dppv, dppe, dppb), which were produced by the reaction of dianion [{μ-S(CH(2))(4)S-μ}{(μ-CO)Fe(2)(CO)(6)}(2)](2-) (formed in situ from Fe(3)(CO)(12), Et(3)N, and dithiol HS(CH(2))(4)SH with excess CS(2), followed by treatment of the resulting dianion [{μ-S(CH(2))(4)S-μ}{(μ-S═CS)Fe(2)(CO)(6)}(2)](2-) with (diphosphine)NiCl(2). However, more interestingly, when dithiol HS(CH(2))(4)SH (used for the production of 7-9) was replaced by HS(CH(2))(3)SH (a dithiol with a shorter carbon chain), the sequential reactions afforded another type of macrocyclic Ni/Fe/S complex, namely, the (diphosphine)Ni-bridged quadruple-butterfly Fe/S complexes [{μ-S(CH(2))(3)S-μ}{(μ-S═CS)Fe(2)(CO)(6)}(2)](2)[Ni(diphosphine)](2) (10-12; diphosphine = dppv, dppe, dppb). While a possible pathway for the production of the two types of novel metallomacrocycles 7-12 is suggested, all of the new complexes 1-12 were characterized by elemental analysis and spectroscopy and some of them by X-ray crystallography.     

Photochemistry on ultrathin metal films: strongly enhanced cross sections for NO2 on Ag/Si(100)

The surface photochemistry of NO(2) on ultrathin Ag(111) films (5-60 nm) on Si(100) substrates has been studied. NO(2), forming N(2)O(4) on the surface, dissociates to release NO and NO(2) into the gas phase with translational energies exceeding the equivalent of the sample temperature. An increase of the photodesorption cross section is observed for 266 nm light when the film thickness is decreased below 30 nm despite the fact that the optical absorptivity decreases. For 4.4 nm film thickness this increase is about threefold. The data are consistent with a similar effect for 355 nm light. The reduced film thickness has no significant influence on the average translation energy of the desorbing molecules or the branching into the different channels. The increased photodesorption cross section is interpreted to result from photon absorption in the Si substrate producing electrons with no or little momenta parallel to the surface at energies where this is not allowed in Ag. It is suggested that these electrons penetrate through the Ag film despite the gap in the surface projected band structure.     

Textured PLCT Thin Films Prepared on Pt/Ti/SiO2/Si Substrate by Metal-Organic Decomposition

Textured calcium modified (Pb,La)TiO₃ (PLCT) films were deposited on Pt/Ti/SiO₂/Si substrates by using a metal-organic decomposition (MOD) process. The PLCT films exhibit good ferroelectric properties, a very low leakage current and a sharp PLCT/Pt interface. The (100) texture of the PLCT film is growth-controlled; the (100) oriented grains grow preferentially so as to minimize the surface energy. Particularly, the (100) preferred orientation is easy to form in the PLCT film with a layered structure for which the substrate almost does not affect the nucleation and growth of the film.