Selective degradation of chemical bonds: from single-source molecular precursors to metallic Ag and semiconducting Ag2S nanocrystals via instant thermal activation

Selective formation of metallic Ag and semiconducting Ag(2)S nanocrystals has been achieved via a modified hot-injection process from a single-source precursor molecule, Ag(SCOPh), which can potentially generate both [Ag] and [AgS] fragments simultaneously. When the precursor molecules are injected into a preheated reaction system at 160 degrees C, spherical Ag(2)S nanocrystals are directly obtained even without a molecular activator, such as alkylamines. Mixtures of Ag and Ag(2)S or pure metallic Ag nanocrystals are obtained if the precursor molecules are injected at lower than 160 degrees C or room temperature. These results are attributed to the direct transfer of thermal energies to precursor molecules, which are enough to dissociate S-C as well as Ag-S bonds simultaneously. Detailed characterizations about the produced nanocrystals have been performed using powder X-ray diffraction (XRD), transmission electron microscopy (TEM), as well as energy-dispersive X-ray (EDX) spectrum.     

Ceramic Films via Organometallic Complex as Single Source Precursor

Fe2(CO)6(μ-S2) was used as a single source precursor in attempt to produce FeS film via MOCVD. Pyrolysis of Fe2(CO)6(μ-S2) at temperature below 500℃ produced Fe1-xS or Fe7S8 powder as indicated by its powder X-ray spectra. At 750 ℃, polycrystalline FeS powder was obtained. In film deposition, polycrystalline Fe1-xS or Fe7Ss films were obtained on Si(100) and Ag/Si(100) substrates below 500 ℃. SEM micrographs showed the film on Si(100) substrate containing whisker like grains. However, pillar like grains were obtained on Ag/Si(100) substrate.Deposition rates are also different for different substrates as evaluated by the thickness of the films, which were obtained by SEM micrographs of the cross section of the films. At 750℃, similar polycrystalline Fe1-xS or Fe7S8 film was obtained.     

纳米二氧化钒薄膜的制备及红外光学性能

采用双离子束溅射方法在Si3N4/SiO2/Si基底表面沉积氧化钒薄膜, 在氮气气氛下热处理获得二氧化钒薄膜. 利用X射线衍射(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱(XPS)研究了热处理温度对氧化钒薄膜晶体结构、表面形貌和组分的影响, 利用傅里叶变换红外光谱(FT-IR)对二氧化钒薄膜的红外透射性能进行了测试分析. 结果表明, 所制备的氧化钒薄膜以非晶态V2O5和四方金红石结构VO2为主, 经400 ℃、2 h热处理后获得了(011)择优取向的单斜金红石结构纳米VO2薄膜, 提高热处理温度至450 ℃, 纳米结构VO2薄膜的晶粒尺寸减小. FT-IR结果显示,纳米VO2薄膜透射率对比因子超过0.99, 高温关闭状态下透射率接近0. 小晶粒尺寸纳米VO2薄膜更适合在热光开关器件领域应用.     

含杂原子的并五苯类似物合成及场效应性能研究

以N,N'-二苯基-1,4-苯二胺为原料, 合成了含硫和氮杂原子的并五苯类似物, 用可见-紫外吸收光谱和电化学测试对这类化合物进行表征, 确定了其光学带隙及轨道能级, 与并五苯相比它们具有低的最高占用分子轨道能级. 得到了三苯并二噻嗪的单晶结构, 分子具有平面结构, 分子间具有强的π…π相互作用和N…S相互作用. 首次将该类并五苯类似物应用于有机薄膜场效应晶体管中, 器件显示好的场效应特性, 迁移率为0.01 cm²·V^-1·s^-1.     

Nanostructural properties of zinc oxide thin films grown on non‐planar substrates

The crystallographic structure of zinc oxide thin films grown on optical fibres using single source chemical vapour deposition (SSCVD) was analysed using near edge X‐ray absorption fine structure (NEXAFS). Zinc diethyl carbamate was used as a precursor for the growth of highly conformal films in a one‐step deposition process without substrate rotation and at substrate temperatures of 400–575 °C. It was found that the growth temperatures greatly affected the crystallographic structure of the film with no preferred crystallographic orientation and negligible crystallinity at low temperatures and very high crystallinity with pure c‐axis orientation at high temperatures. Cross‐sectional analysis of the films by scanning electron microscopy (SEM) showed the presence of a film at all points around the fibre. These films generally consisted of densely packed columns that bore a strong resemblance to c‐axis‐oriented films grown on planar substrates. Copyright © 2005 John Wiley & Sons, Ltd.     

8.01% CuInGaSe2 solar cells fabricated by air-stable low-cost inks

CuInGaSe(2) (CIGS), a promising thin film solar cell material, has gained lots of attention in decades due to its high energy conversion efficiency and potential lower manufacture cost over conventional Si solar cells. As a cheaper processing method compared to vacuum-based techniques, solution-based deposition has been successfully applied to fabricate electronic devices, such as transistors and solar cells. In this paper, we reported CIGS thin film solar cells with an energy conversion efficiency reaching up to 8.01% using air-stable, low-cost inks. The newly developed inks consist of commercially available, low-cost compounds and solvents and can be processed using a variety of printing and coating techniques. More importantly, the inks can produce CIGS films free of copper selenides and amorphous carbon, two common by-products from solution-based CIGS processes. The mechanism for the transformation from metal salt precursor films to CIGS absorber thin films and the influence of selenium vapour pressure on absorber film quality and photovoltaic device performance were investigated and discussed. High-quality CIGS films with micrometer-sized crystals were obtained by using higher selenization partial pressure.     

Preparation of Doped Ceria Electrolyte Films for SOFCs by Spray Coating Method

Spray coating method is a cost-effective technique suitable for the preparation of uniform and large-area thin films. This article presents findings on the preparation of dense electrolyte thin films by spray coating method. Dense, crack-free Gd-doped CeO₂ (GDC) thin films with a thickness of approximately 2 µm were successfully prepared on porous NiO-GDC substrates. The influence of the dispersion of GDC nanopowders in susupension on the microstructure of the thin films was investigated. Results show that agglomeration of GDC nanopowders in suspension resulted in a porous microstructure and a densely packed microstructure was obtained for the film prepared from a well-dispersed suspension.     

Colloidal iron pyrite (FeS2) nanocrystal inks for thin-film photovoltaics

Iron pyrite (FeS2) is a promising earth-abundant semiconductor for thin-film solar cells. In this work, phase-pure, single-crystalline, and well-dispersed colloidal FeS2 nanocrystals (NCs) were synthesized in high yield by a simple hot-injection route in octadecylamine and then were subjected to partial ligand exchange with octadecylxanthate to yield stable pyrite NC inks. Polycrystalline pyrite thin films were fabricated by sintering layers of these NCs at 500?600 °C under a sulfur atmosphere.     

Monitoring carbon nanotube growth by formation of nanotube stacks and investigation of the diffusion-controlled kinetics

A novel method is presented to monitor carbon nanotube (CNT) growth by formation of CNT stacks. By this process, CNT growth kinetics are investigated for densely packed CNT films in the gas-diffusion-controlled regime. CNT stacks are fabricated by water-assisted selective etching and the cyclic introduction of ethylene into the chemical vapor deposition (CVD) reactor. Formation of the CNT stacks allows monitoring of the CNT growth evolution, thereby providing insight into the growth kinetics. A parabolic increase of CNT length versus time is observed, indicating a gas-diffusion-controlled growth mode. The densely packed, well-aligned CNT films act as porous barrier layers to the diffusion of ethylene precursor to the catalyst nanoparticles, since these films form via a base-growth mode under the conditions invoked in our system. By adjustment of CNT growth time and temperature, a quantitative time-evolution analysis is performed to investigate the CNT growth model and extract the gas precursor mass transfer coefficient in the CNT films. The self-diffusion of gases in the densely packed CNT films is found to be Knudsen diffusion with a diffusion coefficient on the order of 10(-4) cm(2)/s.     

Low-temperature preparation of highly conductive thin films from acrylic acid-stabilized silver nanoparticles prepared through ligand exchange

The preparation of AcA-stabilized Ag nanoparticles and its application to make highly conductive thin films are reported. The AcA-stabilized Ag nanoparticles were prepared through a ligand exchange of original oleylamine (OLA)-coated Ag nanoparticles with acrylic acid (AcA), which acted as both an antisolvent and a modifying ligand during the ligand exchange process. Efficiencies of the ligand exchange as well as the properties of Ag nanoparticles were analyzed using various techniques including TEM, FT-IR, XPS, TGA, and UV-vis methods. The thin films were fabricated by annealing spin-coated AcA-stabilized Ag nanoparticles. Further, the effects of annealing temperature, time, and film thickness on both the film morphology and electrical conductivity have been investigated. In this work, due to the low boiling temperature of stabilizer (AcA) and adjustment of annealing conditions, high electrical conductivity was obtained for the Ag thin films. For example, when annealing at 175 °C for 30 min, a 70 nm thick film showed a maximum electrical conductivity of 1.12 × 10(5) S cm(-1). A conductive layer on a flexible polymer substrate (e.g., PET) sheet has been successfully prepared by annealing a spin-coated film at 140 °C for 30 min. The combined advantages of long-term stability of the AcA-stabilized Ag nanoparticles, low annealing temperature, and high conductivity of the prepared thin films make this relatively simple method attractive for applications in flexible electronics.     

Scrutinizing the facile growth of β-Ag2Se fine films

Silver selenide thin film is one of the best candidates for thermoelectric devices. In the previous report, we demonstrated that high-performanced [201] oriented β-Ag₂Se thin films can be prepared by direct metal surface element reaction (DMSER) solution selenization in a really short time at room temperature. However, the underlying mechanism of the fast reaction process were not discussed in depth. Herein, based on hard soft acid base (HASB) theory and strong oxidation, we further explored the possible reaction mechanism of the in-situ growth of β-Ag₂Se thin films as the function of the reaction time. The time-dependent experimental results showed that the formation of the β-Ag₂Se on elemental Ag precursor (∼690 nm thick) in Se/Na₂S precursor solution is in a growth driven mode with no obvious orientation or growth rate selections to the elemental Ag precursors. Our investigations provide a prerequisite for the further preparation of thermoelectric materials with excellent properties.     

Optimizing the Atomic Layer Deposition of Alumina on Perovskite Nanocrystal Films by Using O2 As a Molecular Probe

Encapsulation methods have shown to be effective in imparting improved stability to metal-halide perovskite nanocrystals (NCs). Atomic layer deposition (ALD) of metal oxides is one of the promising approaches for such encapsulation, yet better control on the process parameters are required to achieve viable lifetimes for several optoelectronic and photocatalytic applications. Herein, we optimize the ALD process of amorphous aluminum oxide (AlO_x) as an encapsulating layer for CsPbBr₃ NC thin films by using oxygen (O₂) as a molecular diffusion probe to assess the uniformity of the deposited AlO_x layer. When O₂ reaches the NC surface, it extracts the photogenerated electrons, thus quenching the PL of the CsPbBr₃ NCs. As the quality of the ALD layer improves, less quenching is expected. We compare three different ALD deposition modes. We find that the low temperature/high temperature and the exposure modes improve the quality of the alumina as a gas barrier when compared with the low temperature mode. We attribute this result to a better diffusion of the ALD precursor throughout the NC film. We propose the low temperature/high temperature as the most suitable mode for future implementation of multilayered coatings.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Fabrication of CuInS2 films from electrodeposited Cu/In bilayers: effects of preheat treatment on their structural, photoelectrochemical and solar cell properties

Polycrystalline CuInS(2) films were fabricated by sulfurization of electrodeposited Cu and In metallic precursor films in a Cu-rich composition at 520 °C in H(2)S (5% in Ar). Structural analyses revealed that the adherence of the thus-formed CuInS(2) film to the Mo substrate was strongly dependent on heating profiles of the Cu/In bilayer film: a CuInS(2) film with poor adherence having many crevices was formed when the Cu/In bilayer film was heated monotonously from room temperature to 520 °C in Ar within 25 min followed by sulfurization, whereas CuInS(2) films with good adherence were obtained when the Cu/In films were pretreated at 110 °C in Ar for 10-60 min just before increasing the temperature up to 520 °C for sulfurization. It was also clarified that the CuInS(2) film obtained without 110 °C pretreatment had pinholes inside the film, whereas the CuInS(2) films formed after 110 °C pretreatment showed no notable pinholes. Photoelectrochemical responses of these CuInS(2) films in an electrolyte solution containing Eu(III) indicated that the CuInS(2) films obtained after 110 °C pretreatment had higher external quantum efficiency (EQE) values than those of films obtained without 110 °C pretreatment, mainly due to better adherence of 110 °C pretreated CuInS(2) films to the Mo substrate than the CuInS(2) film obtained without 110 °C pretreatment. The performance of solar cells with an Al:ZnO/Zn(S,O)/CdS/CuInS(2)/Mo structure also depended on the structural characteristics of the CuInS(2) films, i.e., preliminary conversion efficiencies of ca. 5% were obtained for devices based on the CuInS(2) films obtained after 110 °C pretreatment, whereas the device prepared by the CuInS(2) film without 110 °C pretreatment showed the conversion efficiency less than 1.5%.     

Preparation of Y2O3 nanoparticulate thin films using an emulsion liquid membrane system

Y2O3 nanoparticulate thin films have been prepared using an emulsion liquid membrane (water-in-oil-in-water (W/O/W) emulsion) system, consisting of Span 83 (sorbitan sesquioleate) as a surfactant and VA-10 (2-methyl-2-ethylheptanoic acid) as an extractant (cation carrier). Yttrium ions were extracted from the external water phase and stripped into the internal water phase to make precursor oxalate nanoparticles. Y2O3 nanoparticulate thin film was prepared by casting the W/O emulsion, separated from the external phase and containing the Y oxalate nanoparticles, on a Si substrate, followed by calcination in air. Well-arranged thin-layer nanoparticulate film, consisting of Y2O3 nanoparticles smaller than 20 nm, was obtained via spin coating of the W/O emulsion. A multilayer nanoparticulate thin film was also fabricated via a simple procedure of repeated coating and subsequent calcination.     

Growth and characterization of (K<Subscript>0.5</Subscript> Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript> thin films by a sol–gel method

(K_0.5 Na_0.5)NbO₃ (KNN) perovskite materials have been developed as a promising lead-free piezoelectric material for environmentally benign piezoelectric devices. KNN films with about 320 nm thickness were fabricated on Pt(111)/SiO₂/Si(100) substrates by a sol–gel method from stoichiometric and A-site ion excess precursor solutions. Two different annealing methods were also used to investigate the crystallographic evolution of the films. A layer-by-layer annealing process results in highly (001) oriented KNN from the annealing temperature of 550 °C, while the final annealing method leads to weaker crystalline peaks with a random orientation. The KNN films from the K and Na excess precursor solutions show similar crystallization behavior. However, the ferroelectric hysteresis loops of the films were greatly improved by compensating for an A-site vacancy. In particular, the KNN films from K-excess precursor solutions show better ferroelectric properties compared to the films prepared from Na excess solutions.     

Ag-PVA和Ag-PVA/TiO2复合超薄膜的制备及性能研究

用3种方法制备了银纳米粒子-聚乙烯醇复合体系,其中用加热还原法所得体系中Ag纳米粒子的尺寸较大(15nm),其表面等离子体共振吸收峰较宽,最大吸收波长位于420nm;用室温硼氢化钠还原法得到的复合体系的吸收峰蓝移至409nm,且峰形较窄,Ag纳米粒子的平均粒径为8.7nm;低温NaBH4还原法所得体系吸收峰进一步蓝移至397nm,此时Ag纳米粒子粒径最小(3.5nm).将室温还原法所得Ag-PVA复合体系旋涂成膜,所得薄膜光滑、透明、均匀性好,该法适用于制备多层薄膜,以调控薄膜的厚度和光谱性质.将Ag-PVA复合体系与钛酸四丁酯(Ti(O_nBu)₄)的乙醇溶液交替旋涂得到Ag-PVA/TiO₂有机/无机复合薄膜.紫外-可见吸收光谱研究表明,随着Ag-PVA层数的增加,薄膜的表面等离子体共振吸收强度呈线性增加,但是TiO₂层数的增加对吸收光谱没有明显影响.Ag-PVA/TiO₂有机/无机复合薄膜将金属纳米粒子、有机高分子与无机半导体材料结合在一起,这种多层纳米结构在光电、催化功能薄膜等方面具有潜在的应用前景.     

Nanocrystalline TiO2/ZnO thin films: fabrication and application to dye-sensitized solar cells

Nanocrystalline TiO2 thin films composed of densely packed grains were deposited onto indium-doped tin oxide (ITO)-coated glass substrates at room temperature using a chemical bath deposition technique. A layer-by-layer (LbL) process was utilized to obtain a 1.418-microm-thick TiO2/ZnO structure. The TiO2 surface was super-hydrophilic, but its hydrophilicity decreased considerably after ZnO deposition. Other TiO2/ZnO films were studied to assess their suitability as photoelectrodes in dye-sensitized solar cells (DSSCs).     

Grain-Boundary-Free Super-Proton Conduction of a Solution-Processed Prussian-Blue Nanoparticle Film

A porous crystal family has been explored as alternatives of Nafion films exhibiting super-proton conductivities of ≥10⁻² S cm⁻¹. Here, the proton-conduction natures of a solution-processed film of nanoparticles (NPs) have been studied and compared to those of a Nafion film. A mono-particle film of Prussian-blue NPs is spontaneously formed on a self-assembled monolayer substrate by a one-step solution process. A low-temperature heating process of the densely packed, pinhole-free mono-particle NP film enables a maximum 10⁵-fold enhancement of proton conductivity, reaching ca. 10⁻¹ S cm⁻¹. The apparent highest conductivity, compared to previously reported data of the porous crystal family, remains constant against humidity changes by an improved water-retention ability of the film. In our proposed mechanism, the high-performing solution-processed NP film suggests that heating leads to the self-restoration of hydrogen-bonding networks throughout their innumerable grain boundaries.     

Thiocyanate-capped nanocrystal colloids: vibrational reporter of surface chemistry and solution-based route to enhanced coupling in nanocrystal solids

Ammonium thiocyanate (NH(4)SCN) is introduced to exchange the long, insulating ligands used in colloidal nanocrystal (NC) synthesis. The short, air-stable, environmentally benign thiocyanate ligand electrostatically stabilizes a variety of semiconductor and metallic NCs in polar solvents, allowing solution-based deposition of NCs into thin-film NC solids. NH(4)SCN is also effective in replacing ligands on NCs after their assembly into the solid state. The spectroscopic properties of this ligand provide unprecedented insight into the chemical and electronic nature of the surface of the NCs. Spectra indicate that the thiocyanate binds to metal sites on the NC surface and is sensitive to atom type and NC surface charge. The short, thiocyanate ligand gives rise to significantly enhanced electronic coupling between NCs as evidenced by large bathochromic shifts in the absorption spectra of CdSe and CdTe NC thin films and by conductivities as high as (2 ± 0.7) × 10(3) Ω(-1) cm(-1) for Au NC thin films deposited from solution. NH(4)SCN treatment of PbTe NC films increases the conductivity by 10(13), allowing the first Hall measurements of nonsintered NC solids, with Hall effect mobilities of 2.8 ± 0.7 cm(2)/(V·s). Thiocyanate-capped CdSe NC thin films form photodetectors exhibiting sensitive photoconductivity of 10(-5) Ω(-1) cm(-1) under 30 mW/cm(2) of 488 nm illumination with I(photo)/I(dark) > 10(3) and form n-channel thin-film transistors with electron mobilities of 1.5 ± 0.7 cm(2)/(V·s), a current modulation of >10(6), and a subthreshold swing of 0.73 V/decade.