V含量对ZnO薄膜结构及光学特性的影响

0引言氧化锌是一种六角纤锌矿结构的直接宽带隙半导体,其室温下禁带宽度为3.37eV。它具有多种优良的物理性能,在声表面波[1,2]、透明电极[3,4]、光电材料[5]、蓝光器件[6]等方面都有较大的应用潜力。氧化锌价格低廉,不仅能制成良好的半导体和压电薄膜,亦能够制成良好的透明导电薄膜。理论计算表明[7],氧化锌掺杂V、Cr、Fe、Co、N i元素能够产生自旋极化,形成高于室温的稀磁性透明半导体,是下一代微电子和光电子领域自旋电子学器件有重要价值的材料之一。根据理论计算,V掺杂的ZnO膜具有最高的居里温度。V yatkin实验小组[8]用钒离子注入…     

含三苯胺的二苯乙烯化合物的合成及其电致发光性能

电致发光器件在光通讯、光信息处理、视频器件、测控仪器等光电子领域有着广泛而重要的应用价值.无机半导体二极管、半导体粉末、半导体薄膜等电致发光器件尽管已取得了令人注目的成就,但由于其复杂的器件制备工艺,高驱动电压、低发光效率,不能大面积平板显示,能耗较高以及难以解决短波长(如蓝光)等问题,使得无机电致发光材料的进一步发展受到一定的影响.相比之下,有机化合物可通过分子设计的方法合成数量巨大、种类繁多的有机化合物发光材料,使得有机材料构成的电致发光器件有着众多的优势,并成为目前电致发光领域的前沿研究课题之一.有关材料的制备^[1~3],发光机理^[4,5],电致发光器件的制备和性能^[6,7]的研究工作取得了相当大的进展.得到了各种发光颜色的器件,器件的发光亮度也较高.但由于电/光转换效率(量子效率)较低(小于10%),而且稳定性差,目前还只能制备出一些原型器件.     

双长链烷基Dawson结构钼磷酸复合薄膜的制备、结构及光致变色性质

近年来 ,无机 -有机复合材料由于其独特的结构和特殊的光、电和磁功能特性而引起科研工作者的广泛关注 [1,2 ] .杂多化合物为均一的无机多聚物 ,具有笼状结构 ,结构中均有 M3O13三金属氧簇 ,能够接受电子生成杂多蓝或杂多棕 ,加之其在水和有机溶剂中的溶解性和稳定性 ,使其在光电变色材料领域中具有潜在的应用价值 [3～ 5] .但这类化合物难于加工成实际应用的器件 ,因而限制了其进一步的应用 .利用有机组分调控的超分子自组装技术可构建光致变色同多酸或杂多酸纳米薄膜材料 ,从而为开发变色响应快、稳定性好、变色可调控的新型光电变色高密…     

Gd2O3:Eu3+ X射线溶胶-凝胶发光薄膜的制备与表征

高分辨率X射线成像系统要求其发光材料同时具有X射线截止本领强、光产额高、余辉短以及与光电器件波长匹配好等特性. Gd2O3:Eu3 因其优越的发光性能和Eu3 红光发射等优点而在高能射线激发发光材料中占有重要地位. 近几年发展起来的透明X射线薄膜发光材料具有更高的衬度和空间分辨率、热传导率、均匀性和附着力等优点[1], 因而有望成为取代传统荧光粉的新一代X射线成像材料. 在各种薄膜制备工艺中, 溶胶-凝胶法以其价格低廉、工艺简单、制备温度低、均匀性好、可实现微量掺杂等优点而日益受到人们重视, 通过该方法并辅以适当的后处理工艺可制备出透明、致密的薄膜.     

反胶束法合成氧化锌微晶及其荧光特性

0引言材料的结构(微结构)、尺寸和形貌等因素对其特性及其实际应用具有重要的影响。对无机材料特别是氧化物半导体进行结构控制的研究近年来引起了人们极大的关注。氧化锌作为一种宽带隙(3.2eV)半导体材料,可广泛应用于压电材料、气体传感器、橡胶添加剂和光学器件等领域,而且还因其在室温下可产生激射现象使其成为纳米光学材料研究领域中的一大热点[1￣6]。目前,除了传统的固相-气相(V S)反应外,用于氧化锌微晶的制备方法主要有共沉淀法[7]、多羟基化合物水解法[8]、有机金属气相沉积法[9￣12]和水热法[13]等。通过选择不同的制备方法和…     

双硫腙后处理诱导的钙钛矿膜二次结晶和钝化

有机-无机杂化钙钛矿较低的缺陷形成能和表面的悬挂键会导致其薄膜中产生铅缺陷。这些深能级缺陷会直接引起载流子的非辐射复合,导致有机-无机杂化钙钛矿光伏器件的界面接触和载流子传输效率变差,最终降低了器件的综合性能。采用双硫腙作为钙钛矿薄膜表面的二次结晶诱导剂和铅缺陷钝化剂,通过对钙钛矿膜进行后处理的方法实现对钙钛矿薄膜的形貌调控和缺陷钝化。进一步的研究结果表明,双硫腙通过与铅离子配位的方式有效地钝化了铅缺陷,并诱导了表面钙钛矿晶体的二次结晶,改善了薄膜质量,进而提高了器件的综合性能。     

旋转涂布法制备MoO3变色薄膜的研究

近二十年来,过渡金属氧化物半导体薄膜因其具有光致变色/电致变色特性,可作为无机变色材料广泛应用于信息存储、显示以及灵敏器件等方面,而成为材料科学领域的研究热点之一^[1～4].     

利用室温固态反应制备球霰石型CaCO3粒子

合成形态、大小及结构可人为调控的无机材料是现代材料科学的重要研究方向[1]. 借助于各类有机添加剂及模板剂的调控作用, 可利用溶液合成方法制备出形貌与结构受到有效调控的无机粒子[2,3]. 室温固态化学反应已被成功地应用于多种无机纳米粒子[4]及纳米线[5]的合成, 并显示出高效、节能、无污染和操作简便等优点, 因而在材料合成领域具有应用前景[6].     

吡唑啉衍生物的电化学性质及其能带结构

有机 /聚合物电致发光是当今世界上的热门研究领域[1 ,2 ] ,因而有机 /聚合物电致发光材料的能带结构成为非常重要的研究课题[3] .目前 ,确定有机 /聚合物电致发光材料的能带结构的方法主要有电化学法[4] ,光谱法[5] ,量子化学计算法[6] ,紫外光电子能谱法[7] ,光电子发射法[8] 等 .这些方法中 ,由于电化学方法操作简单 ,对仪器设备要求不高 ,故被广泛使用 .虽然不同的测试方法测得的能带数据存在一定的系统误差 ,但由于电发光器件中考虑的是材料间的能带匹配 ,因此 ,在不同的条件下测定的能带数据相对来说是可信的 .吡唑啉化合物具有较高的…     

新型过渡金属取代层状磷酸铝[C_4H_(11)N]_(0.77)[C_4H_(12)N]_(0.23)[C_3H_(12)N_2]_2[H_3O]_2·[Co_(0.23)Al_(5.77)P_8O_(32)]的共模板法合成及表征

采用共模板法以二乙胺和1,2-丙二胺为模板剂,合成了过渡金属取代的二维层状磷酸铝化合物[C4H11N]0.77[C4H1 2N]0.23[C3H12N2]2[Co0.2 3Al5.77P8O32][H3O]2(1).通过X射线衍射(XRD)、热重分析(TG)、元素分析(ICP-AES及CHN)、固体紫外-可见分析(Solid-UV-Vis)及扫描电子显微镜(SEM)等对化合物1进行了表征.该化合物属三斜晶系,P 1-空间群,晶胞参数a=0.95029(19)nm,b=1.2689(3)nm,c=1.2987(3)nm,α=118.70(3)°,β=97.64(3)°,γ=99.72(3)°,V=1.3117(5)nm3,Z=1.其无机骨架由铝(或钴)氧四面体(AlO4或CoO4)和磷氧四面体PO3(O)严格交替连接形成4,6,12-网层结构,无机层沿[001]方向堆砌成一维十二元环孔道.Co无序取代Al的位置,其Co/Al摩尔比约为1∶25.1.运用分子动力学模拟的方法,通过计算有机模板剂和无机骨架的相互作用,讨论了2种有机胺分子的共模板作用.     

XPS study of impurities in Si‐doped AlN film

This paper reports an XPS study of impurities in a 100‐nm‐thick AlN film grown by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n‐type 6H‐SiC substrate. The Si‐doped AlN film was characterized by the X‐ray photoelectron spectroscopy (XPS) in a high vacuum system, which reveals the content distribution and chemical states of impurities along depth. The XPS analysis of AlN film before and after argon‐ion etching indicates that there always exist Ga, O and C contaminations in AlN film. Especially, O contamination on the AlN film surface is mostly introduced during the growth of AlN layer by MOCVD. Meanwhile, most of O atoms bind with Al or Ga in Al―O and Ga―O chemical states. In particular, the Ga atoms in AlN film are always in two chemical states, i.e. Ga―Ga bond and Ga―O bond, which demonstrates that the aggregation of Ga is accompanying with AlN growth. Copyright © 2016 John Wiley & Sons, Ltd.     

XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy

Ten samples of crystalline aluminum nitride (AlN) film were deposited on sapphire and silicon substrates by a plasma source molecular beam method. The samples were analyzed using X‐ray photoelectron spectroscopy (XPS) depth profiling and high‐resolution X‐ray diffraction. Oxygen levels were observed to decrease exponentially from the surface into the bulk film. Aluminum, nitrogen and oxygen peaks were fitted with subpeaks in a consistent manner and the subpeaks were assigned to chemical states. AlN subpeaks were observed at 73.5 eV for Al2p and 396.4 eV for N1s. An N1s subpeak at 395.0 eV was assigned to N? N defects. No direct N? O bonds are assigned; rather it is proposed that an N? Al? O bond sequence is the source of higher binding energy N1s subpeaks. The observations in this study support a model in which oxygen is bound only to aluminum in the form of Al? O octahedral complexes dispersed or clustered throughout the main AlN matrix or as Al? O bonds on the crystal grain boundaries. The data also suggest that the AlN lattice parameters are related to oxygen content, since the c‐axis is observed to increase with increasing oxygen content. Copyright © 2008 John Wiley & Sons, Ltd.     

Auger peak shape analysis of AlN film grown by ammonia plasma

An AlN film was grown using ammonia plasma and characterized with Auger electron spectroscopy in depth profile mode using argon sputtering. After growth of AlN on a 6061 Al substrate in a plasma chamber, the sample was removed from the vacuum and transported to an ultrahigh vacuum surface analysis system. Detailed AES spectra of Al, O and N are presented as a function of sputtering time (depth). Relative concentration changes were observed for the KLL O and KLL N signals but there were no significant lineshape changes, however significant relative concentration and lineshape changes associated with the LVV Al signal were observed. Lineshape analysis indicates the presence of the following bonds: Al–O (56 eV), Al–N (59 eV) and Al–Al (68 eV). Copyright © 2003 John Wiley & Sons, Ltd.     

胶原蛋白-葡甘聚糖-壳聚糖(CKCS)共混膜的表面性质

生物材料植入人体后,其生物学性能主要由人体组织和体液等与材料表面的相互作用决定。本文通过对CKCS-2的CKCS-5膜的X-射线光电子能谱分析和静态接触角测定,考察胶原蛋白-葡甘聚糖-壳聚糖共混膜的表面性质,为共混膜在生物医学领域的应用提供理论依据。     

Oxidation Behaviour of PACVD-(Ti,Al)N Wear Resistance Layers

 Sputtered (Ti,Al)N hard coatings are successfully used for dry high speed cutting. These films show a lower oxidation rate than TiN or TiC coatings. In our work (Ti,Al)N films were deposited on WC-6%Co substrates at a temperature of 490°C by plasma-assisted chemical vapour deposition (PACVD) using a gas mixture of TiCl₄/AlCl₃/N₂/Ar/H₂. Investigation of microstructure, crystalline structure and chemical composition was carried out using SEM, WDXS, TEM, AES and XRD techniques. The chemical composition of the deposited films showed a Al to Ti ratio of 1.33. The film thickness was 5.5 μm. Films showed a fine crystalline size, the metastable fcc crystal structure and a columnar growth. The film surface was under low compressive stress up to several 100 MPa. For (Ti,Al)N/WC-Co compounds the oxidation behaviour up to 1100°C (high temperature range) was studied. Therefore, samples were annealed or rapidly heated in air and under high vacuum condition using the laser shock method. The results show decomposition of the (Ti,Al)N structure to the TiN and the AlN phases at temperature values above 900°C. Heating in air causes growing of a thin aluminum oxide layer at the film surface, which is a barrier for further oxygen diffusion to the alumina-film boundary. Additionally, at temperatures above 900°C oxidation of the WC-6%Co substrate surface was obtained in regions of opened cracks and film delamination.     

Surface analysis by X-ray photoelectron spectroscopy of sol-gel silica modified with covalently bound peptides

Chemical surface characterization of biologically modified sol-gel derived silica is critical but somewhat limited. This work demonstrates the ability of x-ray photoelectron spectroscopy (XPS) to characterize the surface chemistry of peptide modified sol-gel thin films based on the example of four different free peptide-silanes, denoted RGD, NID, KDI ,and YIG. The N 1s and C 1s peaks were found to be good fingerprints of the peptides, whereas O 1s overlapped with the signal of substrate oxygen and, therefore, the O 1s peak was not informative in the case of the thin films. The C 1s peak was fitted and the contribution of the residual hydrocarbons was sorted out. The curve-fitting procedure of the C 1s peak accounted for the different chemical states of carbon atoms in the peptide structure. The curve-fitting procedure was validated by analyzing free peptides in the powder form and was then applied to the characterization of the peptide-modified thin films. The XPS measured ratio between nitrogen and carbon for the peptide thin film was similar to the corresponding value calculated from the peptide structures. Angle resolved XPS confirmed the surface nature of peptides in modified thin films. The coverage and thickness of the peptides on the thin film surface depended on the peptide sequence. The coverage was in the range of 10% of a monolayer, and the layer thickness varied from 10 to 30 A. We believe that the different thicknesses and surface coverage are due to the local structure of the peptides, with the RGD and NID peptides taking a globule conformation and the YIG and KDI peptides adopting a more linear structure.     

XPS和AES研究锡表面的防变色膜

通过比较多种防锡变色剂的防变色效果,发现乙二胺四甲叉膦酸(EDTMP)是一种优良的防锡变色剂。用XPS、AES及Raman光谱探讨了EDTMP的防变色机理,结果表明EDTMP在锡表面形成了一种耐蚀性保护膜。在深度剖析曲线的元素组成近似恒定区测得膜的相对原子浓度(A.C.％)为:O 48.0％;Sn 10.7％;N 7.7％;C 23.1％;P 10.5％。     

Epitaxial growth of AlN films on single-crystalline Ta substrates

We have demonstrated the first epitaxial growth of AlN films on single-crystalline Ta substrates by the use of a low-temperature growth technique based on pulsed laser deposition (PLD). Although previous AlN films grown on Ta(100) and (111) substrates have exhibited quite poor crystallinity, an epitaxial AlN(0001) film with an in-plane epitaxial relationship of AlN[112¯0]//Ta[001] has been obtained on a Ta(110) substrate at a growth temperature of 450 °C. We found that the full-width at half-maximum values for the crystal orientation distribution in the tilt and twist directions of the AlN film were 0.37° and 0.41°, respectively. Grazing-incidence X-ray reflection (GIXR) and X-ray photoelectron spectroscopy (XPS) measurements have revealed that the AlN/Ta heterointerface is quite abrupt, and that its abruptness remains unchanged even after annealing at 1000 °C.     

Surface modification of aromatic polyamide film by oxygen plasma

The surface of poly(p-phenylene terephthalamide) (PPTA) films was modified by oxygen plasma, and the modified film surface was analyzed by an advancing contact meter and X-ray photoelectron spectroscopy (XPS). The advancing contact measurement showed that the oxygen plasma treatment made the surface of the PPTA film hydrophilic. The XPS analyses also showed the increase in the O/C and N/C atom ratio, especially the O/C atom ratio, at the PPTA film surface by the oxygen plasma treatment. A main oxygen functionality formed by the oxygen plasma treatment is a carboxylic acid group, and a main nitrogen functionality formed is a protonated amino group. The formation of the oxygen and nitrogen functionalities formed by the oxygen plasma treatment is not restricted to the surface of the PPTA film, but penetrates at least 35 Å deep from the film surface. The formation of these carboxylic acid and protonated amino groups is a result of the bond scission of the amide linkages in the PPTA film. Interactions of photons in the oxygen plasma rather than interactions of electrons and activated oxygen atoms contribute greatly to the bond scission. © 1995 John Wiley & Sons, Inc.     

Epitaxial growth of single-crystalline Al(2)O(3) films on Cr(2)O(3)(0001)

Thin, crystallographically oriented single-crystalline Al2O3 films can be grown epitaxially on Cr2O3(0001) by codeposition of Al vapor and O2 at a substrate temperature of 825 K. The properties and growth of these films were monitored by Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), low-energy ion scattering (LEIS), and X-ray photoelectron spectroscopy (XPS). Two routes of preparation were investigated: (i) stepwise growth by alternating deposition of Al at room temperature and subsequent exposure to O2 at elevated temperatures; (ii) codeposition of Al and O2 at T > 800 K. The first route was consistently found to result in the growth of a complex interfacial oxide followed by the growth of polycrystalline Al2O3. The second mode of preparation provided homogeneous and ordered, probably (0001)-oriented, films of Al2O3 that maintained a LEED pattern up to a thickness around 10 A. The surface sensitive Cr MVV Auger transition at 34 eV was completely attenuated once the Al2O3 layer had reached a thickness of 6 A, pointing to film homogeneity at an early stage. This was confirmed by the absence of a significant Cr signal in LEIS spectra.