Dibenzoannelated tetrathienoacene: synthesis, characterization, and applications in organic field-effect transistors

Two structural isomers of six-fused-ring sulfur-containing molecules were synthesized as active materials for p-type organic field-effect transistors, and their optical and electrochemical properties were characterized. Field-effect transistors based on these compounds were fabricated to investigate the relationships between structures and semiconductor properties.     

有机单晶场效应晶体管

有机单晶场效应晶体管的研究对于探索电子的本质特性具有十分重要的意义。近几年来,不管是在制备技术还是在器件性能的研究方面,有机单晶场效应晶体管均取得了很大的进步,并由此引起了社会的广泛关注,成为场效应晶体管领域的一个重要研究方向。本文主要介绍了有机单晶的生长方法、有机场效应器件的各种制备技术、器件的迁移率及其影响因素,并对有机单晶场效应晶体管的发展前景和面临的一些问题作了简要的讨论。     

Simple circuit to improve electric field homogeneity in contour-clamped homogeneous electric field chambers.

We redesigned contour-clamped homogeneous electric field (CHEF) circuitry to eliminate crossover distortion, to set identical potentials at electrodes of each equipotential pair and to drive pairs with transistors in emitter follower stages. An equipotential pair comprised the two electrodes set at the same potential to provide electric field homogeneity inside of the hexagonal array. The new circuitry consisted of two identical circuits, each having a resistor ladder, diodes and transistors. Both circuits were interconnected by diodes that controlled the current flow to electrodes when the array was energized in the 'A' or 'B' direction of the electric field. The total number of transistors was two-thirds of the total number of electrodes. Average voltage deviation from potentials expected at electrodes to achieve a homogeneous electric field was 0.06 V, whereas 0.44 V was obtained with another circuit that used transistors in push-pull stages. The new voltage clamp unit is cheap, generated homogeneous electric field, and gave reproducible and undistorted DNA band patterns.     

有机单晶场效应晶体管

有机单晶场效应晶体管的研究对于探索电子的本质特性具有十分重要的意义。近几年来，不管是在制备技术还是在器件性能的研究方面，有机单晶场效应晶体管均取得了很大的进步，并由此引起了社会的广泛关注，成为场效应晶体管领域的一个重要研究方向。本文主要介绍了有机单晶的生长方法、有机场效应器件的各种制备技术、器件的迁移率及其影响因素，并对有机单晶场效应晶体管的发展前景和面临的一些问题作了简要的讨论。     

Charge carrier transport in high purity perylene single crystal studied by time-of-flight measurements and through field effect transistor characteristics

Electronic transport has been studied by measuring the characteristics of field effect transistors using high purity perylene and the results have been compared with those from time-of-flight measurements. The purity of the material has been monitored by carrier trapping time and delayed fluorescence lifetime. Three types of field effect transistors have been studied: (1) thin film transistor, (2) transistor prepared by placing a single crystal flake on a substrate and (3) transistor fabricated on a single crystal by depositing electrodes and insulating layer onto it. Compared to thin film transistors prepared by evaporating perylene onto a SiO₂/Si substrate, higher mobility values were obtained with transistors using single crystals, but the electrical characteristics of the transistors were far from ideal: large threshold gate voltage observed in the second class of FETs indicated that a high density of traps are present at the interface between the organics and the insulator. A transistor of the third class showed that it functioned indeed as a FET with a reasonably high mobility, but the operation was not stable enough to allow reliable measurements. Much remains to be improved in the design and construction of a perylene FET before the potentiality of the material is fully developed. Also, it remains to be explored to what extent the bulk purity and the molecular order at the organics/insulator interface influence the transport of the charge carriers in an organic FET.     

吲哚方酸菁半导体在场效应晶体管中的应用

研究了2,3,3-三甲基-1-H-吲哚方酸菁的场效应性质, 通过X射线衍射证实了方酸菁分子内电荷分离结构以及分子间面面堆积模式, 并在Si/SiO₂基片上通过真空蒸镀和旋涂的方法制备了p型晶体管器件. 通过对器件性能与沟道形态的研究, 我们发现退火处理能促进方酸菁薄膜由无定形态向多晶态转变, 从而使薄膜晶体管的迁移率从10^-5 cm²?V^-1?s^-1量级提高到10^-3 cm²?V^-1?s^-1量级. 顶接触结构单晶器件获得了7.8×10^-2 cm²?V^-1?s^-1的迁移率. 未封装的方酸菁晶体管在大气中也表现出较好的稳定性.     

Phthalocyanine-based field-effect transistors as gas sensors

In this review molecular field-effect transistors are described and compared with their gate-modified inorganic counterparts. The different processes involved in gas sensing are summarized. The advantages of transistors on resistors are demonstrated. The sensitivity of molecular field-effect transistors to strong oxidizing species, for example ozone, is detailed and compared with their sensitivity to humidity and volatile organic compounds. Application to ozone monitoring in urban atmospheres is also described.     

N‐Heterocyclic‐Carbene‐Treated Gold Surfaces in Pentacene Organic Field‐Effect Transistors: Improved Stability and Contact at the Interface

N‐Heterocyclic carbenes (NHCs), which react with the surface of Au electrodes, have been successfully applied in pentacene transistors. With the application of NHCs, the charge‐carrier mobility of pentacene transistors increased by five times, while the contact resistance at the pentacene–Au interface was reduced by 85 %. Even after annealing the NHC–Au electrodes at 200 °C for 2 h before pentacene deposition, the charge‐carrier mobility of the pentacene transistors did not decrease. The distinguished performance makes NHCs as excellent alternatives to thiols as metal modifiers for the application in organic field‐effect transistors (OFETs).     

Sol-Gel Composites-Based Flexible and Transparent Amorphous Indium Gallium Zinc Oxide Thin-Film Synaptic Transistors for Wearable Intelligent Electronics

In this study, we propose the fabrication of sol-gel composite-based flexible and transparent synaptic transistors on polyimide (PI) substrates. Because a low thermal budget process is essential for the implementation of high-performance synaptic transistors on flexible PI substrates, microwave annealing (MWA) as a heat treatment process suitable for thermally vulnerable substrates was employed and compared to conventional thermal annealing (CTA). In addition, a solution-processed wide-bandgap amorphous In-Ga-Zn (2:1:1) oxide (a-IGZO) channel, an organic polymer chitosan electrolyte-based electric double layer (EDL), and a high-k Ta₂O₅ thin-film dielectric layer were applied to achieve high flexibility and transparency. The essential synaptic plasticity of the flexible and transparent synaptic transistors fabricated with the MWA process was demonstrated by single spike, paired-pulse facilitation, multi-spike facilitation excitatory post-synaptic current (EPSC), and three-cycle evaluation of potentiation and depression behaviors. Furthermore, we verified the mechanical robustness of the fabricated device through repeated bending tests and demonstrated that the electrical properties were stably maintained. As a result, the proposed sol-gel composite-based synaptic transistors are expected to serve as transparent and flexible intelligent electronic devices capable of stable neural operation.     

Electrolyte-gated transistors based on conducting polymer nanowire junction arrays

In this study, we describe the electrolyte gating and doping effects of transistors based on conducting polymer nanowire electrode junction arrays in buffered aqueous media. Conducting polymer nanowires including polyaniline, polypyrrole, and poly(ethylenedioxythiophene) were investigated. In the presence of a positive gate bias, the device exhibits a large on/off current ratio of 978 for polyaniline nanowire-based transistors; these values vary according to the acidity of the gate medium. We attribute these efficient electrolyte gating and doping effects to the electrochemically fabricated nanostructures of conducting polymer nanowires. This study demonstrates that two-terminal devices can be easily converted into three-terminal transistors by simply immersing the device into an electrolyte solution along with a gate electrode. Here, the field-induced modulation can be applied for signal amplification to enhance the device performance.     

Cyclodimers and Cyclotrimers of 2,3 -Bisalkynylated Anthracenes,Phenazines and Diazatetracenes

The synthesis of novel (N−)acene-based cyclooligomers is reported. Glaser-Hay coupling of the bisethynylated monomers results in cyclodimers and cyclotrimers that are separable by column and gel-permeation chromatographies. For the diazatetracene, the use of sec-butyl-silylethynyl groups is necessary to achieve solubility. Diazatetracene-based cyclodimers and cyclotrimers were used as semiconductors in thin-film transistors. Although their optoelectronic properties are quite similar, their electron mobilities in proof-of-concept thin-film transistors differ by an order of magnitude.     

2,5-二(2-菲基)-[3,2-b]并二噻吩的合成、表征及在有机薄膜晶体管中的应用

本文合成了2,5-二(2-菲基)-[3,2-b]并二噻吩(PhTT), 表征了其基本的物理和化学性质, 制备了相应的有机薄膜晶体管.     

聚合物场效应晶体管材料及其器件

导电聚合物因为可以大面积成膜、器件制作工艺简单,近年来在有机场效应晶体管的研究中受到越来越多的关注。有的聚合物场效应晶体管其性能已经可以和无定型硅晶体管相比拟。本文回顾了聚合物场效应晶体管的发展历程,概述了聚合物场效应晶体管的材料、器件制作、性能及工作机理。同时,对聚合物场效应晶体管的发展前景和目前存在的问题作了简单的总结。     

聚合物场效应晶体管材料及其器件

导电聚合物因为可以大面积成膜、器件制作工艺简单,近年来在有机场效应晶体管的研究中受到越来越多的关注.有的聚合物场效应晶体管其性能已经可以和无定型硅晶体管相比拟.本文回顾了聚合物场效应晶体管的发展历程,概述了聚合物场效应晶体管的材料、器件制作、性能及工作机理.同时,对聚合物场效应晶体管的发展前景和目前存在的问题作了简单的总结.     

ZnO nanowire transistors

ZnO nanowire field-effect transistors (FETs) were fabricated and studied in vacuum and a variety of ambient gases from 5 to 300 K. In air, these n-type nanowire transistors have among the highest mobilities yet reported for ZnO FETs (mu(e) = 13 +/- 5 cm(2) V(-1) s(-1)), with carrier concentrations averaging 5.2 +/- 2.5 x 10(17) cm(-3) and on-off current ratios ranging from 10(5) to 10(7). Four probe measurements show that the resistivity of the Ti/Au-ZnO contacts is 0.002-0.02 Omega.cm. The performance characteristics of the nanowire transistors are intimately tied to the presence and nature of adsorbed surface species. In addition, we describe a dynamic gate effect that seems to involve mobile surface charges and causes hysteresis in the transconductance, among other effects.     

Floating-potential dielectrophoresis-controlled fabrication of single-carbon-nanotube transistors and their electrical properties

We present a floating-potential dielectrophoresis method used for the first time to achieve controlled alignment of an individual semiconducting or metallic single-walled carbon nanotube (SWCNT) between two electrical contacts with high repeatability. This result is significantly different from previous reports, in which bundles of SWCNTs were aligned between electrode arrays by a conventional dielectrophoresis process where the results were only collected from the control electrode regions. In this study, our alignment focus is not only on the regions of the control electrodes but also on those of the floating electrodes. Our results indicate that bundles of carbon nanotubes along with impurities were first moved into the region between two control electrodes while individual nanotubes without impurities were straightened and aligned between two floating electrodes. The measurements for the back-gated nanotube transistors made by this method displayed an on-off ratio and transconductance of 10(5) and 0.3 microS, respectively. These output and transport properties are comparable with those of nanotube transistors made by other methods. Most importantly, the findings in this study show an effective way to separate individual nanotubes from bundles and impurities and advance the processes for site-selective fabrication of single-SWCNT transistors and related electrical devices.     

High-performance low-cost organic field-effect transistors with chemically modified bottom electrodes

The characteristics of organic field-effect transistors (OFETs) were dramatically improved by chemically modifying the surface of the bottom-contact Ag or Cu source-drain (D-S) electrodes with a simple solution method. The contact resistance and energetic mismatch typically observed with Ag D-S electrodes in pentacene bottom-contact OFETs can be properly eliminated when modified by the Ag-TCNQ (TCNQ = 7,7,8,8-tetracyanoquinodimethane). The pentacene transistors with low-cost Ag-TCNQ-modified Ag bottom-contact electrodes exhibit outstanding electrical properties, which are comparable with that of the Au top-contact devices. It thus provides a novel way toward high-performance low-cost bottom-contact OFETs.     

小分子场效应晶体管

近几年来，作为新一代半导体晶体管的有机场效应晶体管(OFET)在制备技术和器件性能上都取得了很大的进步,并引起了有机半导体领域研究人员的广泛关注。本文主要介绍了常见的小分子材料在场效应晶体管中的应用，并对几种有机小分子材料的结构和场效应性能做了总结。     

高迁移率有机薄膜晶体管材料进展

对近几年来高迁移率有机薄膜晶体管材料研究的主要发展作了简要介绍和评述,讨论了高迁移率有机半导体材料存在的问题和发展方向．     

Chemical and biological sensors based on organic thin-film transistors

The application of organic thin-film transistors (OTFTs) to chemical and biological sensing is reviewed. This review covers transistors that are based on the modulation of current through thin organic semiconducting films, and includes both field-effect and electrochemical transistors. The advantages of using OTFTs as sensors (including high sensitivity and selectivity) are described, and results are presented for sensing analytes in both gaseous and aqueous environments. The primary emphasis is on the major developments in the field of OTFT sensing over the last 5–10 years, but some earlier work is discussed briefly to provide a foundation.