有机单晶场效应晶体管

有机单晶场效应晶体管的研究对于探索电子的本质特性具有十分重要的意义。近几年来,不管是在制备技术还是在器件性能的研究方面,有机单晶场效应晶体管均取得了很大的进步,并由此引起了社会的广泛关注,成为场效应晶体管领域的一个重要研究方向。本文主要介绍了有机单晶的生长方法、有机场效应器件的各种制备技术、器件的迁移率及其影响因素,并对有机单晶场效应晶体管的发展前景和面临的一些问题作了简要的讨论。     

有机单晶场效应晶体管

有机单晶场效应晶体管的研究对于探索电子的本质特性具有十分重要的意义.近几年来,不管是在制备技术还是在器件性能的研究方面,有机单晶场效应晶体管均取得了很大的进步,并由此引起了社会的广泛关注,成为场效应晶体管领域的一个重要研究方向.本文主要介绍了有机单晶的生长方法、有机场效应器件的各种制备技术、器件的迁移率及其影响因素,并对有机单晶场效应晶体管的发展前景和面临的一些问题作了简要的讨论.     

有机微纳晶场效应晶体管

有机单晶中分子排列长程有序、无晶界且杂质和缺陷很少,是揭示有机半导体材料本征性能和制备高迁移率器件的最佳选择。因此,有机单晶材料对于构筑高性能电子器件和电路等方面具有无可比拟的优势。同时,有机单晶材料也为揭示半导体材料微观分子堆积与宏观电性能关系提供了重要手段。有机分子间以弱的范德华力相结合,因此,有机半导体单晶多以微纳晶形式存在。目前,种类繁多的有机微纳晶半导体材料被广泛应用于高性能场效应晶体管器件,这些器件的研究不仅可以筛选出高性能的有机半导体材料,也为科研人员提供更多的机会来理解有机半导体中电荷传输的物理内涵。本综述介绍了有机单晶场效应晶体管的基本结构和运行机理;微纳晶制备、表征方法以及器件构筑方法;总结了近三年来有机微纳晶半导体材料与器件取得的最新研究进展;探讨了当前有机微纳晶研究的热点和趋势并分析了面临的挑战。     

小分子场效应晶体管

近几年来，作为新一代半导体晶体管的有机场效应晶体管(OFET)在制备技术和器件性能上都取得了很大的进步,并引起了有机半导体领域研究人员的广泛关注。本文主要介绍了常见的小分子材料在场效应晶体管中的应用，并对几种有机小分子材料的结构和场效应性能做了总结。     

溶液法大面积制备有机小分子场效应晶体管

作为柔性电子器件的基本构筑元件,有机场效应晶体管(OFETs)近年来受到深入研究并在高性能材料研发和器件多功能应用等方面取得了长足的进展。溶液加工技术以其温和的操作条件和灵活多样的工艺流程,成为实现高性能有机场效应晶体管器件低成本、大面积制备的优良选择。与聚合物相比,小分子有机半导体材料具有较高的固态堆积有序度及紧密程度和材料纯度,更易加工出性能优良的器件。然而小分子材料的成膜性较差,溶液加工潜能欠佳。如何通过不同的溶液加工技术制备取向均一的大面积连续小分子半导体薄膜,进而构筑高性能大面积器件阵列,成为了领域内的研究重点。本文概述了近年来可溶液加工且性能优良的小分子有机半导体材料研究进展,并依据工艺特点,分别介绍了溶液滴注、弯液面引导涂布和打印这三类可实现大面积制备的溶液加工技术,最后对溶液法大面积制备有机小分子场效应晶体管领域的发展前景进行了展望。     

有机发光晶体管的关键材料和器件研究※

有机发光晶体管(organic light-emitting transistor, OLET)是一种变革性的小型化有机光电器件, 其在同一器件中集成了场效应晶体管和发光二极管的两种器件功能, 在材料的基础物性研究、新型柔性显示/照明、有机电泵浦激光以及片上集成光电子器件等方面都具有着重要的研究意义. OLET独特的器件结构及工作模式使其对核心的关键材料和器件制备提出了新的要求, 而高性能OLET器件的构筑需要从材料和器件两个方面同时进行优化与改善. 近五年作者课题组和合作者在全面调研和分析OLET领域整体研究背景和存在基本科学问题基础上, 聚焦于高迁移率发光有机半导体关键材料的开发和高效OLET器件(线光源和面光源发光模式)的构筑两个方面开展了初步的探索性研究, 发展了系列特别是基于蒽和芴的高迁移率发光/激光有机半导体材料, 构筑了高性能的单组分有机单晶OLET器件和新型平面OLET面光源发射显示器件, 为进一步推动OLET及其相关领域发展奠定了重要的材料和器件研究基础.     

基于CH_3NH_3Pbl_3单晶的Ta_2O_5顶栅双极性场效应晶体管（英文）

具有无机-有机杂化钙钛矿结构的CH_3NH_3Pbl_3通常偏向于显示n型半导体特性,本文以五氧化二钽(Ta_2O_5)作为绝缘层,制备了基于钙钛矿CH_3NH_3Pbl_3单晶的顶栅结构场效应晶体管,暗态下更明显地观察到了CH_3NH_3Pbl_3所具有的p型场效应特性,空穴场效应迁移率达到8.7×10~(-5)cm~2·V~(-1)·s~(-1),此暗态空穴迁移率比原有报道的基于CH_3NH_3Pbl_3多晶薄膜的SiO_2底栅场效应晶体管提高了一个数量级。此外,光照对CH_3NH_3Pbl_3单晶场效应晶体管的性能有强烈影响。与底栅结构CH_3NH_3Pbl_3多晶场效应晶体管不同,即使有栅极和绝缘层的遮挡,5.00 mW·cm~(-2)的光照仍可使CH_3NH_3Pbl_3单晶场效应晶体管的空穴电流提高一个数量级(V_(GS)(栅源电压)=V_(DS)(漏源电压)=20 V),光响应度达到2.5 A·W~(-1)。本文工作实现了对CH_3NH_3Pbl_3场效应晶体管载流子传输的选择性调控,表明在没有外部因素的参与下,通过合适的器件设计,CH_3NH_3Pbl_3同样具有制备成双极性晶体管的潜力。     

基于有机(高分子)半导体和光致变色分子的场效应晶体管

作为有机电子学重要的研究内容,有机场效应晶体管(OFETs)的研究近年来得到了广泛的关注.随着应用场景的多元化,研究者对具有多功能,尤其是对特定外场刺激具有响应及存储功能的场效应晶体管的研究越来越重视.其中,在光照下发生器件性能可逆变化的有机场效应晶体管在神经突触模拟、多稳态记忆器件、非易失性存储器等功能器件领域具有潜...     

聚合物场效应晶体管材料及其器件

导电聚合物因为可以大面积成膜、器件制作工艺简单,近年来在有机场效应晶体管的研究中受到越来越多的关注。有的聚合物场效应晶体管其性能已经可以和无定型硅晶体管相比拟。本文回顾了聚合物场效应晶体管的发展历程,概述了聚合物场效应晶体管的材料、器件制作、性能及工作机理。同时,对聚合物场效应晶体管的发展前景和目前存在的问题作了简单的总结。     

聚合物场效应晶体管材料及其器件

导电聚合物因为可以大面积成膜、器件制作工艺简单,近年来在有机场效应晶体管的研究中受到越来越多的关注.有的聚合物场效应晶体管其性能已经可以和无定型硅晶体管相比拟.本文回顾了聚合物场效应晶体管的发展历程,概述了聚合物场效应晶体管的材料、器件制作、性能及工作机理.同时,对聚合物场效应晶体管的发展前景和目前存在的问题作了简单的总结.     

Recent progress in organic field-effect transistor-based integrated circuits

Organic integrated circuits are undergoing rapid development with the extensive research on organic semiconducting materials and the performance improvement of organic field-effect transistors. Organic integrated circuits not only cover all the major circuit types, their complexity, degree of integration, and performance have also been improved in recent years. In this review, recent advances in the design and fabrication of integrated circuits based on organic field-effect transistors are reported. The circuits are categorized into digital and analog, which are discussed in detail centering on the structure, fabrication process, and performance. In addition, progress in the modeling and simulation of organic integrated circuits are discussed as well, as they are key issues for the future development of organic electronics.     

Organic thin-film transistors as transducers for (bio) analytical applications

The use of organic thin-film transistors (OTFTs) in sensorics is relatively new. Although electronic noses, electronic textiles and disposable biochemical sensors appear to be viable applications for this type of devices, the benefits of the technology still have to be proven. This paper aims to provide a review of the recent advances in the area of chemically sensitive field-effect devices based on organic thin-film transistors (OTFTs), with emphasis on bioanalytical applications. Detection principle, device configuration, materials and fabrication processes as well as sensor performances will be discussed, with emphasis on the potential for implementation in real applications and the important challenges ahead.     

Air-stable ambipolar field-effect transistors based on copper phthalocyanine and tetracyanoquinodimethane

The fabrication of air-stable ambipolar organic field-effect transistors with sandwich-type and bilayer architecture based on copper phthalocyanine and 7,7,8,8-tetracyanoquin odimethane is reported. In comparison with bilayer devices, the sandwich-type configuration enhances the performance and reproducibility of ambipolar devices, which is mainly ascribed to the double conductive channels in the sandwich-type structure. The measured p-channel and n-channel mobility of sandwich-type devices are comparable to that of copper phthalocyanine and 7,7,8,8-tetracyanoquinodimethane single layer devices, respectively.     

掺杂在有机场效应晶体管中的应用进展

有机场效应晶体管(OFETs)作为一种新型的电子器件,以其柔性、可大规模简单制备等优势获得了广泛的关注。 但是,OFETs面临着器件性能不足、调控手段复杂等问题。人们尝试使用掺杂对这些问题加以解决。 本文结合本课题组的相关工作,对掺杂技术在OFETs上的应用进行归纳、总结和展望。     

Crystallization and Organic Field-Effect Transistor Performance of a Hydrogen-Bonded Quaterthiophene

Crystalline thin films of π-conjugated molecules are relevant as the active layers in organic electronic devices. Therefore, materials with enhanced control over the supramolecular arrangement, crystallinity, and thin-film morphology are desirable. Herein, it is reported that hydrogen-bonded substituents serve as additional structure-directing elements that positively affect crystallization, thin-film morphology, and device performance of p-type organic semiconductors. It is observed that a quaterthiophene diacetamide exhibits a denser packing than that of other quaterthiophenes in the single-crystal structure and, as a result, displays enhanced intermolecular electronic interactions. This feature was preserved in crystalline thin films that exhibited a layer-by-layer morphology, with large domain sizes and high internal order. As a result, organic field-effect transistors of these polycrystalline thin films showed mobilities in the range of the best mobility values reported for single-crystalline quaterthiophenes. The use of hydrogen-bonded groups may, thus, provide an avenue for organic semiconducting materials with improved morphology and performance.     

High-performance air-stable n-type transistors with an asymmetrical device configuration based on organic single-crystalline submicrometer/nanometer ribbons

High-performance air-stable n-type field-effect transistors based on single-crystalline submicro- and nanometer ribbons of copper hexadecafluorophthalocyanine (F(16)CuPc) were studied by using a novel device configuration. These submicro- and nanometer ribbons were synthesized by a physical vapor transport technique and characterized by the powder X-ray diffraction pattern and selected area electron diffraction pattern of transmission electron microscopy. They were found to crystallize in a structure different from that of copper phthalocyanine. These single-crystalline submicro- and nanometer ribbons could be in situ grown along the surface of Si/SiO(2) substrates during synthesis. The intimate contact between the crystal and the insulator surface generated by the "in situ growing process" was free from the general disadvantages of the handpicking process for the fabrication of organic single-crystal devices. High performance was observed in devices with an asymmetrical drain/source (Au/Ag) electrode configuration because in such devices a stepwise energy level between the electrodes and the lowest unoccupied molecular orbital of F(16)CuPc was built, which was beneficial to electron injection and transport. The field-effect mobility of such devices was calculated to be approximately 0.2 cm(2) V(-)(1) s(-)(1) with the on/off ratio at approximately 6 x 10(4). The performances of the transistors were air stable and highly reproducible.