近紫外LED用绿色荧光粉Ba0.11Sr2.89-2x-2yCexTbyNax+yAlO4F发光特性及Ce3+→Tb3+之间能量传递

高温固相法合成Ba0.11Sr2.89-2x-2yCexTbyNax+yAlO4F荧光粉,并用X射线衍射(XRD)、荧光光谱(PL)测定分析了其晶体结构及光谱性质。结果表明:当Tb3+掺杂量x=0.07时,发光强度最高,发射主峰位于545 nm,并进一步研究了Ce3+,Tb3+共掺的样品中Ce3+→Tb3+能量传递过程。其次,测试由近紫外LED(~380 nm)和三基色荧光粉(Ba0.11Sr2.89Ce0.01Tb0.07Na0.08AlO4F,BAM and Sr2Si5N8:Eu2+)封装的白光LED光电性能,其色品坐标(x=0.3223,y=0.3408),色温5500 K,显色指数为86.26。因此,Ba0.11Sr2.89-2x-2yCexTbyNax+yAlO4F可作为一种潜在的适用于近紫外LED激发的荧光材料。     

白色荧光粉NaGd（MoO4）2:Dy3+,Eu3+的水热合成及发光性能

采用谷氨酸辅助水热法合成了八面体形NaGd(MoO4)2:Dy3+,Eu3+白色荧光粉.X射线衍射结果表明,合成的样品为四方晶系的NaGd(MoO4)2纯相.扫描电子显微镜照片显示所制备的粒子为八面体形,各边长约为2μm.荧光光谱结果表明,在NaGd(MoO4)2:4%Dy3+,yEu3+(y=0,0.5%,0.6%,0.7%,0.8%,0.9%,1.0%)样品中,随着Eu3+掺入量的增加,Dy3+的发射峰逐渐减弱,而Eu3+的发射峰逐渐增强,说明Dy3+-Eu3+之间存在能量传递.通过色坐标图可知,当Eu3+掺杂量y=0.9%时,荧光粉的色坐标(0.338,0.281)与标准的白光色坐标(0.33,0.33)接近,表明NaGd(MoO4)2:4%Dy3+,0.9%Eu3+是很好的近紫外光激发下的白色荧光粉.     

Eu~(2+),Mn~(2+)共激活碱土镁硅酸盐基红色荧光粉的发光性能

制备了以R3MgSi2O8(R=Ba,Sr,Ca)为基,Eu2+,Mn2+共激活的红色荧光粉并研究了其荧光性质。分别以Ba3MgSi2O8,Sr3MgSi2O8,Ca3MgSi2O8为基质时,由于晶体场环境不同,发光强度、发射峰产生相应变化。研究了以(Ba,Sr)3MgSi2O8为基的荧光粉中Ba,Sr相对量,及Eu2+,Mn2+浓度对发光性质的影响并探讨了Eu2+,Mn2+在基质中所处格位;结果表明,红光是由基质中处于九配位的Eu2+将能量传递给八面体六配位的Mn2+,而由Mn2+所发射的。     

Sr1-x Znx Y2 S4:Er3+,Eu2+荧光粉的合成与发光特性的研究

采用碳酸盐前躯体高温分解法合成了Sr1-xZnxY2S4:Er3+, Sr1-xZnxY2S4:Eu2+和Sr1-xZnxY2S4:Er3+, Eu2+红色荧光粉. XRD图谱表明, Zn2+掺杂量x<0.2 mol 时, 粉末样品为CaFe2O4型正交晶体. Zn2+离子在Sr1-xZnxY2S4:Er3+, Eu2+中的固溶量(x mol)对荧光粉的发射强度影响很大. 随着Zn2+离子掺杂浓度的增加, Sr1-xZnxY2S4:Er3+, Eu2+(SZYSEE)紫外区激发峰(200～413 nm)发生红移, 并与可见光激发带(413～600 nm)形成一个连续的宽带谱, 与紫外和GaN基LED芯片辐射都有良好的匹配性. 当Zn2+掺杂量为0.1 mol时, SZYSEE的发光强度达到最大, 其发光强度比未掺Zn2+的增强10.7倍. Sr0.9Zn0.1Y1.76S4:0.24Er3+, 0.006Eu2+是一种潜在的白光LED用红色荧光粉.     

(Ca1-x-yLuy)MoO4∶xEu3+红色荧光粉的化学共沉淀合成与光致发光

使用NH4HCO3-NH3.H2O混合沉淀剂,采用化学共沉淀法合成(Ca1-x-yLuy)MoO4:xEu3+红色荧光粉,通过XRD、EDS、荧光光谱和CIE色度图研究该荧光粉的晶体结构、成分组成及发光性能。结果表明,实验按照理论化学计量比成功合成了(Ca1-x-yLuy)MoO4:xEu3+红色荧光粉,该荧光粉为CaMoO4白钨矿结构;(Ca1-x-yLuy)MoO4:xEu3+具有7F0→5L6(394 nm)和7F0→5D2(465 nm)的强电子吸收,且在613 nm处可发射高强度红光,其色坐标为(0.666 5,0.332 9),明显优于传统的Y2O2S:Eu3+红色荧光粉;此外,当Lu含量为30mol%时,荧光粉发光强度最佳。     

(Y,Gd)VO_4∶Eu~(3+)的紫外-真空紫外发光特性

用高温固相法合成了Y1-xGdxVO4∶Eu3 (0≤x≤1)系列单相样品并研究了其发光特性。在254nm激发下,观察到最大强度位于619nm的红色发射峰且其强度在Y/Gd=0.4/0.6时达到最大。在147nm激发下的发射峰与紫外下的一致,发射强度也是在Y/Gd=0.4/0.6时达到最大,大约是商用(Y,Gd)BO3∶Eu3 荧光体的65%。619nm监控下的真空紫外激发光谱由峰值位于158nm,204nm,247nm以及300nm的系列激发带组成,归属于钒酸根的基质吸收以及Gd3 、Y3 和Eu3 的电荷迁移带吸收。相对(Y,Gd)BO3∶Eu3 中Eu3 占据中心对称格位,(Y,Gd)VO4∶Eu3 中Eu3 占据非中心对称格位,其真空紫外下光谱色纯度更好。色坐标分别为(0.632,0.355),(0.672,0.328)。     

Ce3+,Tb3+,Eu3+共掺杂Sr2MgSi2O7体系的白色发光和能量传递机理

通过正交试验,采用高温固相法制备了Sr2-x-y-zMgSi2O7∶xCe3+,yTb3+,zEu3+系列样品.使用X射线衍射仪和荧光光谱仪表征了样品的物相和发光性质,并讨论了Ce3+-Tb3+-Eu3+共掺杂Sr2MgSi2O7体系中的能量传递过程.实验结果表明,在327 nm波长激发下,所合成荧光粉的发射峰主要位于387 nm(蓝紫)、542nm(绿)和611 nm(红)处;分别以387,542和611 nm为监控波长,所得激发光谱显示荧光粉在327 nm处有最好的激发.在327 nm光激发下,系列样品发光进入白光区.最优化的荧光粉为Sr1.91MgSi2O7∶0.01Ce3+,0.05Tb3+,0.03Eu3+,其色坐标为(0.337,0.313),是一种潜在的发光二极管(LED)用白色荧光粉.     

Sr2+含量对红色荧光粉Ca0.85-xSrxMoO4:Eu3+0.075,Li+0.075发光性能的影响

采用溶胶-凝胶法制备了Ca0.85-xSrxMoO4:Eu3+0.075,Li+0.075(x=0,0.05,0.1,0.15,0.2,0.3,0.4)系列红色荧光粉.对样品前驱体的热重分析表明:温度升高到540℃后样品质量基本上保持稳定,不再发生失重现象;此外,还对样品的结构和发光性能进行表征,实验结果表明:适量Sr2+取代部分的Ca2+不但没有改变Ca0.85MoO4:Eu3+,Li+的物相结构,而且明显提高了荧光粉Ca0.85MoO4:Eu3+,Li+的相对发光强度,其主要是由于加入少量的Sr2+使晶体发生了畸变,从而导致发光强度的增加.实验结果表明,Sr2+的最佳掺杂量为15%(原子分数).     

NaY(WO4)2:Eu3+/Tb3+/Tm3+白色荧光粉的制备与发光性能

采用溶剂热法合成了一种单一相白色荧光粉NaY(WO4)2:Eu3+,Tb3+,Tm3+.通过X射线衍射(XRD)、扫描电镜(SEM)、X射线能谱(EDS)及荧光光谱(PL)对制备的系列样品的物相、形貌和荧光性质进行了表征.结果表明:在荧光粉NaY(WO4)2:x％Eu3+,4％Tb3+,1％Tm3+(x=5,10,15,20)中,随着Eu3+掺入量的增加,发光从绿光区进入白光区.同时观察到Tb3+到Eu3+的有效能量传递.     

(Y,Gd)BO3:Eu3+荧光粉的合成及粒度控制

使用草酸共沉淀法合成了钇钆铕氧化物生粉, 以此为原料合成了PDP用(Y,Gd)BO3:Eu3 荧光粉; 研究了各种因素对(Y,Gd)BO3:Eu3 荧光粉相对亮度及粒度的影响. 结果表明, 加入适当的添加剂可以有效控制荧光粉的粒度和颗粒形貌, 但加入量过多会影响荧光粉的亮度; 温度、保温时间、预烧、硼酸配比等参数均对荧光粉度及粒度有较大影响. 给出了优化的工艺参数, 按此工艺可以直接合成粒度2～4 μm的荧光粉, 无须球磨分散. 在λex=147 nm激发时,该荧光粉色坐标x=0.644,y=0.356.     

Preparation, characterization and photoluminescence properties of BaB2O4: Eu3+ red phosphor

A new red emitting BaB2O4: Eu3+ phosphor was synthesized by solid-state reaction method. X-ray powder diffraction (XRD) analysis confirmed the monoclinic formation of BaB2O4. Field-emission scanning electron-microscopy (FE-SEM) observation indicated that the microstructure of the phosphor consisted of irregular grains with heavy agglomerate phenomena. Upon excitation with 394 nm light, the BaB2O4: Eu3+ phosphor shows bright red emissions with the highest photoluminescence (PL) intensity at 611 nm due to 5D0→7F2 transitions of Eu3+ ions. The CIE chromaticity coordinates are calculated from the emission spectrum to be x=0.64, y=0.35. The effects of the Eu3+ concentration on the PL were investigated. The results showed that the optimum concentration of Eu3+ in BaB2O4 host is 6 mol% and the dipole-dipole interaction plays the major role in the mechanism of concentration quenching of Eu3+ in BaB2O4: Eu3+ phosphor. The effect of charge compensation on the emission intensity was also studied. The charge compensations of Li+, Na+ and K+ anions all increased the luminescent intensity of BaB2O4: Eu3+. K+ anion gave the best improvement to enhance the intensity of the emission, indicating K+ is the optimal charge compensator. All properties show that this phosphor could serve as a potential candidate for application as a red phosphor for NUV chip LED.     

New SrAl2B2O7:Eu2+, Mn2+ phosphors for white light-emitting diodes

A series of Eu(2+) and Mn(2+) co-doped SrAl(2)B(2)O(7) phosphors were prepared by solid-state reaction method. X-ray powder diffraction (XRD) and photoluminescence excitation and emission were employed to characterize the phosphors. The results show that energy transfers between Eu(2+)and Mn(2+) ions. As the content of Ca(2+) ions in Ca(x)Sr(0.92-x)Al(2)B(2)O(7):Eu(2+)(0.06), Mn(2+)(0.02) phosphors increased, the CIE coordinates decreased and close to the white color standard mandated by the National Television Standard Committee (NTSC). Meanwhile, a white LED (light-emitting diode) was fabricated by combining the Ca(0.5)Sr(0.42)Al(2)B(2)O(7):Eu(2+)(0.06), Mn(2+)(0.02) phosphors with a 370 nm InGaN chip. The color coordinate of the fabricated white LED was also close to the white color standard, indicating that the Ca(0.5)Sr(0.42)Al(2)B(2)O(7):Eu(2+)(0.06), Mn(2+)(0.02) phosphor is a promising single-host phosphor that can be used in white LEDs.     

橙红色荧光粉BaZnP2O7∶Eu3+的制备与发光特性

采用高温固相法合成了BaZnP2O7∶Eu3+荧光粉, 并对其发光性质进行了研究.     

GdVO_4∶Eu~(3 )的真空紫外激发光谱研究

报道了GdVO4∶Eu3 的光致发光光谱和真空紫外 紫外激发光谱。GdVO4∶Eu3 是高效率的真空紫外 紫外激发荧光材料。GdVO4∶Eu3 在6 0～ 35 0nm真空紫外 紫外波段的激发可能主要来源于基质的吸收 ,有明显的Eu3 及Gd3 的 4fn - 1 5d吸收。在GdVO4∶Eu3 中 ,存在如下能量传递过程 :VO3 - 4 →Eu3 ,Gd3 →Eu3 ,Gd3 →VO3 - 4 →Eu3 ;通过后两个过程 ,Gd3 Eu3 可实现量子剪裁。     

Vacuum Ultraviolet Excited Photoluminescence Properties of Y202S:Eu3+,Bi3+ Phosphor

As an Hg-free lamp using phosphor,the Bi3+ and Eu3+ co-doped Y2O2S phosphors were prepared and their luminescence properties under vacuum uitraviolet(VUV) excitation were investigated.The VUV photolumineseent intensity of Y2O2S:Eu3+ was weak,however,considerably stronger red emission at 626 nm with good color purity was observed in Y2O2S:Eu3+,Bi3+ systems.Investigation on the photoluminescence reveals that the strong VUV luminescence of Y2O2S:Eu3+,Bi3+ at 147 nm is mainly because the Bi3+ acts as a medium and effectively performs the energy transfer process: Y3+-O2→Bi3+→Eu3+,while the intense emission band at 172 nm is attributed to the absorption of the characteristic 1So-1P1 transition of Bi3+ and the direct energy transfer from Bi3+ to Eu3+.The Y2O2S:Eu3+,Bi3+ shows excellent VUV optical properties compared with the commercial (Y,Gd)BO3:Eu3+.Thus,the Y2O2S:Eu3+,Bi3+ can be a potential red VUV-excited candidate applied in Hg-free lamps for backlight of liquid crystal display.     

单掺杂与共掺杂离子对Sr2Mg(BO3)2磷光体热释发光的影响

通过高温固相法合成了Sr2Mg(BO3)2磷光体, 并研究了Li＋, Bi3＋, Gd3＋, Ti4＋共掺杂对Sr2Mg(BO3)2∶Dy磷光体热释发光的影响. 研究发现: Li＋的共掺杂使Sr2Mg(BO3)2∶Dy磷光体的热释光主峰强度增加, 而 Bi3＋, Gd3＋或Ti4＋的掺入使样品的热释光强度降低. 在Li＋, Bi3＋, Gd3＋或Ti4＋共掺杂的Sr2Mg(BO3)2∶Dy磷光体高温热释光发射谱中, 我们观察到了480, 579, 662和755 nm的发射峰, 为特征Dy3＋离子的4F9/2→6H15/2, 4F9/2→6H13/2, 4F9/2→6H11/2和4F9/2→6H9/2跃迁, 与Sr2Mg(BO3)2∶Dy磷光体的发射一致. 利用峰形法, 我们评估了Sr2Mg(BO3)2∶ , ( )热释光磷光体234 ℃发光峰的动力学参数, 陷阱深度E＝1.1 eV, 频率因子s＝6.3×109 s－1, 遵循二级动力学.     

Highly effective synthesis and photoluminescence of Sr2Si5N8:Eu2+ red-emitting phosphor for LEDs

We developed a highly effective and self-sustaining route for synthesizing Sr(2)Si(5)N(8):Eu(2+) red-emitting phosphor particles for use in light emitting diodes (LEDs). The phosphors thus synthesized showed excellent emission characteristics under a blue excitation wavelength of 450 nm, had a uniform particle size distribution, and showed high performance in LED packages.     

Novel yellow-emitting Sr8MgLn(PO4)7:Eu2+ (Ln=Y, La) phosphors for applications in white LEDs with excellent color rendering index

Eu(2+)-activated Sr(8)MgY(PO(4))(7) and Sr(8)MgLa(PO(4))(7) yellow-emitting phosphors were successfully synthesized by solid-state reactions for applications in excellent color rendering index white light-emitting diodes (LEDs). The excitation and reflectance spectra of these phosphors show broad band excitation and absorption in the 250-450 nm near-ultraviolet region, which is ascribed to the 4f(7) → 4f(6)5d(1) transitions of Eu(2+). Therefore, these phosphors meet the application requirements for near-UV LED chips. Upon excitation at 400 nm, the Sr(8)MgY(PO(4))(7):Eu(2+) and Sr(8)MgLa(PO(4))(7):Eu(2+) phosphors exhibit strong yellow emissions centered at 518, 610, and 611 nm with better thermal stability than (Ba,Sr)(2)SiO(4) (570 nm) commodity phosphors. The composition-optimized concentrations of Eu(2+) in Sr(8)MgLa(PO(4))(7):Eu(2+) and Sr(8)MgY(PO(4))(7):Eu(2+) phosphors were determined to be 0.01 and 0.03 mol, respectively. A warm white-light near-UV LED was fabricated using a near-UV 400 nm chip pumped by a phosphor blend of blue-emitting BaMgAl(10)O(17):Eu(2+) and yellow-emitting Sr(8)MgY(PO(4))(7):0.01Eu(2+) or Sr(8)MgLa(PO(4))(7):0.03Eu(2+), driven by a 350 mA current. The Sr(8)MgY(PO(4))(7):0.01Eu(2+) and Sr(8)MgLa(PO(4))(7):0.03Eu(2+) containing LEDs produced a white light with Commission International de I'Eclairage (CIE) chromaticity coordinates of (0.348, 0.357) and (0.365, 0.328), warm correlated color temperatures of 4705 and 4100 K, and excellent color rendering indices of 95.375 and 91.75, respectively.