氧杂氟表面活性剂及其与同电性碳氢表面活性剂混合溶液的表面吸附和胶团形成

研究了四种氧杂氟表面活性及其与同电性直链碳氢表面活性剂混合体系的表面活性;考察了混合体系中的表面吸附和胶团形成现象.在吸附层中分子间有明显的互疏作用,在溶液中倾向于各自形成胶团.还讨论了反离子结合度不同对理想混合胶团的组成CMC的计算的影响,提出了一般的计算式,实验测得这些氧杂氟表面活性剂有较低的胶团反离子结合度.     

氧杂氟表面活性剂及其与同电性碳氢表面活性剂混合溶液的表面吸附和胶团形成

研究了四种氧杂氟表面活性剂及其与同电性直链碳氢表面活性剂混合体系的表面活性;考察了混合体系中的表面吸附和胶团形成现象.在吸附层中分子间有明显的互疏作用,在溶液中倾向于各自形成胶团.还讨论了反离子结合度不同对理想混合胶团的组成及cmc的计算的影响,提出了一般的计算式.实验测得这些氧杂氟表面活性剂有较低的胶团反离子结合度.     

Co3O4/CoO/Co/石墨复合材料的制备及其电容性能研究

以葡萄糖为前驱物,采用水热法合成了胶态碳球,然后利用胶态碳球制备了Co3O4/CoO/Co/石墨复合材料.此复合材料与其它研究者采用类似方法制备的物质相比具有完全不同的结构,它们是由多层不同物质组成的球形结构,其最外层是Co3O4,第二层是CoO,第三层是Co,最里面一层是石墨.采用循环伏安和恒电流充放电等方法对Co3...     

新型阴离子Gemini表面活性剂与非离子表面活性剂C10E6混合溶液的胶团化的研究

研究了烷基苯磺酸盐Gemini表面活性剂Ia与非离子表面活性剂C10E6溶液混合胶团中分子间的相互作用. 通过表面张力法测定了Ia 和C10E6不同比例不同温度下的临界胶束浓度(cmc). 结果表明, 两种表面活性剂以任何比例复配的cmc比单一表面活性剂的cmc都低, 表现出良好的协同效应. 传统型非离子表面活性剂C10E6、Gemini表面活性剂Ia及混合物的cmc都随着温度升高而降低. 而且, 任何配比的混合胶团中两种表面活性剂分子间的相互作用参数β都是负值, 这说明两种表面活性剂在混合胶团中产生了相互吸引的作用. 混合表面活性剂体系的胶团聚集数比单一Ia的大, 但比单一C10E6的小. 向Gemini表面活性剂Ia胶束中加入非离子表面活性剂C10E6会使胶束的微观极性变小.     

全氟丁基磺酸钠与辛基三乙基溴化铵的相互作用

通过测定辛基三乙基溴化铵(C8H17N(CH2CH3)3Br,C8NE)与全氟丁基磺酸钠(C4F9SO3Na,C4F)组成的不同混合比的碳氢-碳氟正负离子表面活性剂混合体系的表面张力,得到不同摩尔比时C8NEC4F体系的临界胶束浓度(cmc)、cmc处的表面张力(γcmc)、总饱和吸附量、不同表面张力时表面吸附层的组成,利用Gibbs-Duhem方程求得cmc处的胶团组成。 采用规则溶液理论计算了胶团中分子间相互作用参数(βm),并求得cmc以上的胶团组成。 实验表明,C8NEC4F复配体系的cmc远远小于单体系的cmc,这也体现在该体系的βm负值很大,胶团内分子相互作用很强。 但是C4F与C8NE复配后γcmc较C4F单体系的变化幅度不是特别大(γcmc降低2~4 mN/m),这是由于C8NEC4F碳链的不对称性导致部分C8NE的碳链在溶液表面弯曲而覆盖了C4F端基CF3基团。 表面吸附层中氟表面活性剂相对于本体溶液是富集的,即使对于C8NE大大过量的体系,表面吸附层组成也在等摩尔附近;对于C4F过量的体系,C4F在表面吸附层中的比例比溶液中的略高。 随着表面张力的降低,表面吸附层的组成相对更偏向于氟表面活性剂。 cmc处的胶团组成随着体系中C4F含量的增大偏向于形成显著富含C4F的胶团,对于C8NE大大过量的体系,胶团组成接近等摩尔。 cmc之后的胶团组成接近等摩尔,主要归因于此时静电相互作用占主导,这和溶液配制过程中发现复配体系超过cmc一定浓度后就易生成沉淀的现象是相符的。     

低碳醇对季铵盐二聚表面活性剂C_(12)-2-C_(12)·2Br胶团化行为的影响

随着丙、丁、戊、已醇的加入，与季铵盐二聚表面活性剂C_(12)-2-C_(12)· 2Br组成了混合胶团，醇分子以烷烃链插入胶团中，羟基则位于胶团栅栏层处。这 减弱了表面活性剂离子头基间的静电排斥力，使临界胶团浓度(cmc)降低，同时使 胶团表面反离子解离度增大。随着醇分子的烷烃链增长，这种影响更为显著。     

不等链长的碳氟、碳氢正负离子表面活性剂混合体系的表面活性

研究了全氟辛酸钠与溴化十四烷基三甲铵混合水溶液的表面活性. 测定了不同比例混合物水溶液的表面张力-浓度曲线, 得出临界胶团浓度(cmc)及监 界胶团浓度时的溶液表面张力(γcmc)值. 应用Gibbs吸附公式及吸附层中两表面活性剂分子相互作用参数法求出表面总吸附量、吸附层组成及两表面活性剂分别吸附量等. 指示此吸附层具有多分子层性质. 这可能是碳氢、碳氟正负离子混合体系的特点.     

不同结构氧化锌对CIIR/ENR共混胶的气体阻隔性能和力学性能的影响

以重量比为90∶10的氯化丁基橡胶/环氧天然橡胶共混胶为基体,用密炼法将三种不同结构的氧化锌（普通条状氧化锌、片状氧化锌和纳米结构氧化锌）分散到基体中,研究不同结构的氧化锌对共混胶力学性能和气体阻隔性能的影响.结果表明片状氧化锌和纳米氧化锌复合胶比普通氧化锌复合胶强度下降,伸长率提高.片层氧化锌复合体系硫磺用量提高到2.0份,综合力学性能达到最好,且片状氧化锌能够赋予复合胶最佳的气体阻隔性能,比普通氧化锌体系提高了50％.     

烷基磷（膦）酸萃取剂钠盐与非离子表面活性剂AEO_9混合体系胶团的形成和分子间的相互作用

本文研究了烷基磷（膦）酸萃取剂钠盐ＮａＥＨＥＨＰ，ＮａＤＴＭＰＰ，Ｎａ_２（ＭＥＨＰ）与非离子表面活性剂ＡＥＯ_９以不同比例复配后水溶液胶团的形成及分子间的相互作用，结果表明混合胶团的形成使ＣＭＣ大大降低。分子间在胶团中的相互作用强弱为：Ｎａ_２（ＭＥＨＰ）体系＞ＮａＤＴＭＰＰ体系＞ＮａＥＨＥＨＰ体系，分子间在表面层的吸引作用小于同体系分子间在胶团中的相互作用，这一结果有利于混合胶团的形成。     

烷基磷（膦）酸萃取剂钠盐与非离子表面活性剂AEO9混合体系胶团的…

本文研究了烷基磷（膦）酸萃取剂钠盐ＮａＥＨＥＨＰ，ＮａＤＴＭＰＰ，Ｎａ２（ＭＥＨＰ）与非离子表面活性剂ＡＥＯ９以不同比例复配后水溶液胶团的形成及分子间的相互作用结果表明混合胶团的形成使ＣＭＣ大大降低，分子间在胶团中的相互中弱为，Ｎａ２（ＭＥＨＰ）体系〉ＮａＤＴＭＰＰ体系〉ＮａＥＨＥＨＰ体系，分子间在表面层的作用小于同体系分子间在胶团中的相互作用，这一结果有利于混合胶团的形成。     

Outgassing analysis of molecular glass photoresists under EUV irradiation

A device was designed and assembled to analyze the outgassing of molecular glass(MG)photoresists under extreme ultraviolet(EUV)exposure.The outgassing of the photoresists with different components and different concentrations of tert-butoxycarbonyl(t-Boc),photo-generated acid(PAG),and acid quencher was systematically investigated.Based on experiments,some solutions for reducing the outgassing of MG photoresists were proposed.     

用于光致抗蚀剂的聚对羟基苯乙烯的合成及其进展

随着集成电路芯片的发展,生产物理和化学性质均一的高分子光阻剂得到了各信息产业国的重视.到目前为止,含对羟基苯乙烯基的高分子光阻剂已成为光刻蚀0.11μm线宽芯片的关键技术.本文综述了目前合成窄分布的含对羟基苯乙烯基的高分子光阻剂的各种方法,在此基础上比较了各种合成方法的优缺点,为合成窄分布的含对羟基苯乙烯基的高分子光阻剂提供了必要的指导.     

先进光刻胶材料的研究进展

本文简述了光刻技术及光刻胶的发展过程,并对应用于193纳米光刻和下一代EUV光刻的光刻胶材料的研究进展进行了综述,特别对文献中EUV光刻胶材料的研发进行了较为详细的介绍,以期对我国先进光刻胶的研发工作有所帮助.     

Dynamic examinations at photoresists by reflectance spectroscopy

Summary An optical device is introduced, which allows the observation of the changes of chemical and physical properties of photoresists during irradiation. The photoresists are fixed as thin films at the surface of either semiconductor elements or circuit boards. The apparatus allows on-line process control during the photochemical reactions taking place in photoresists. By use of fiber optics and a photodiode array the spectral reflectance can be measured repetitively within 15 ms. This fast repetition rate allows on-line process control even during short radiation times, which are usual in practice to produce a pattern in the photoresists for the micro structuring of circuit boards or semiconductor wafers. The possibilities of the method and details of the apparatus are demonstrated at given examples of photoresists.

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Dynamische Untersuchungen an Photoresisten über Reflexionsspektroskopie

     

Photoresists comparative analysis using soft X-ray synchrotron radiation and time-of-flight mass spectrometry

Positive photoresists are widely used in lithographic process for the fabrication of relief components. When exposed to UV radiation they suffer chemical reactions modifying their chemical and physical properties. Aiming to follow molecular modifications among two different photoresists unexposed and previously exposed to ultraviolet light we have employed spectroscopic techniques coupled with mass spectrometry in the study of the AZ-1518 and AZ-4620 photoresists. The photon stimulated ion desorption (PSID) technique following the S K-edge NEXAFS spectrum was employed at the brazilian synchrotron light source (LNLS), during single-bunch operation and using time-of-flight mass spectrometry (TOF-MS) for ion analysis. NEXAFS and PSID mass spectra on both AZ-1518 and AZ-4620 photoresists (unexposed and exposed) were obtained and relative desorption ion yield curves determined for the main fragments as a function of the photon energy. They present marked different PSID spectra. Fragments related to the photochemical decomposition of the AZ-1518 photoresist could be clearly identified differently from the AZ-4620. Studies on the hardness of both photoresists were performed using O₂ plasma reactive ion etching (RIE) technique, analyzed by scanning electron microscopy (SEM) and used to explain different desorption yields in the PSID spectra. These results show that the PSID technique is adequate to investigate structural changes in molecular level in different unexposed and exposed photoresists, which is crucial for improving our knowledge about the breakup process.     

AZ-1518 Photoresist analysis with synchrotron radiation using high-resolution time-of-flight mass spectrometry

With the aim of identifying molecular modifications among photoresists unexposed and previously exposed to the ultraviolet light the photon stimulated ion desorption (PSID) technique was employed in the study of the AZ-1518 photoresist. Data acquisition was performed at the Brazilian Synchrotron Light Source (LNLS), during a single-bunch operation mode of the storage ring and using high-resolution time-of-flight mass spectrometry (TOF-MS) for ion analysis. PSID mass spectra on both photoresists (unexposed and exposed) were obtained following the S K-shell photoexcitation and desorption ion yield curves have been determined for the main fragments as a function of the photon energy. The AZ-1518 photoresists presented different PSID spectra, showing characteristic fragments. Most of the analyzed ions showed larger relative yields for the exposed photoresist. Fragments related to the photochemical decomposition of the photoresist could be clearly identified. These results showed that the PSID technique is adequate to investigate structural changes in molecular level in unexposed and exposed photoresists.     

It's in the Fine Print: Erasable Three‐Dimensional Laser‐Printed Micro‐ and Nanostructures

3D printing, on all scales, is currently a vibrant topic in scientific and industrial research as it has enormous potential to radically change manufacturing. Owing to the inherent nature of the manufacturing process, 3D printed structures may require additional material to structurally support complex features. Such support material must be removed after printing—sometimes termed subtractive manufacturing—without adversely affecting the remaining structure. An elegant solution is the use of photoresists containing labile bonds that allow for controlled cleavage with specific triggers. Herein, we explore state‐of‐the‐art cleavable photoresists for 3D direct laser writing, as well as their potential to combine additive and subtractive manufacturing in a hybrid technology. We discuss photoresist design, feature resolution, cleavage properties, and current limitations of selected examples. Furthermore, we share our perspective on possible labile bonds, and their corresponding cleavage trigger, which we believe will have a critical impact on future applications and expand the toolbox of available cleavable photoresists.     

248nm深紫外光刻胶

本文从化学增幅技术的产生,深紫外248nm胶主体树脂及PAG发展历程、溶解抑制剂、存在的工艺问题及解决途径多个方面综述了深紫外248nm胶的发展与进步.     

Polyphenol derivatives of porphyrins containing fluorene units: Synthesis and positive-tone photoresists for 22-nanometer lithography

A new strategy was proposed for the synthesis of polyphenol derivatives of fluorene-containing porphyrins to be used as the base for positive-tone photoresists for lithography with exposure at 13.5 nm wavelength, which allow fabrication of microchips with a size of down to 22 nm. Polyphenols based on fluorenecontaining porphyrins were synthesized for the first time. It was shown that these polyphenol derivatives can be used to obtain positive-tone photoresists with a resolution of 22 nm.     

含POSS光刻胶材料研究进展

光致抗蚀剂又称光刻胶,是微电子加工过程中的关键材料。多面体低聚倍半硅氧烷（POSS）是一种具有规则的笼型结构的聚合物增强材料,由POSS改性的聚合物实现了有机-无机纳米杂化,POSS刚性结构的引入阻碍了聚合物分子的运动,可以显著提高聚合物的玻璃化转变温度（T_g）,降低聚合物的介电常数,提高聚合物的力学性能,也提高了含POSS光致抗蚀剂的耐蚀刻性。基于这些优点,含POSS的光刻胶材料得到广泛关注。本文对含POSS光刻胶的研究进展作了简要介绍。