石墨烯中的Stone-wales缺陷对铂原子催化解离氧分子的影响

采用密度泛函理论中的UB3LYP方法,研究了石墨烯中的Stone-wales缺陷对铂原子催化解离氧气分子的影响.通过计算发现,氧气分子在以Stone-wales缺陷石墨烯片为载体的铂上(Pt-SW)形成3种吸附结构,通过4条路径,最终生成两种产物.氧气分子最易通过[2+1]环加成作用,吸附在以Stone-wales缺陷石墨烯片为载体的Pt的表面上,吸附能(Eads)为-0.64eV.由于石墨烯片上的Stone-wales缺陷的存在,氧气分子在Pt-SW上解离的4条路径中最有利的解离路径中的决速步能垒都明显高于氧气在以完美石墨烯为载体的Pt(Pt/Graphene)上解离的能垒(1.51eV vs 1.35eV),相应吸收的热量也高于在Pt/Graphene上吸收的热量(0.79eVvs0.15eV).     

PtFe掺杂石墨烯抗CO中毒性能的理论研究

基于密度泛函理论第一性原理研究了以单空位缺陷(SV)石墨烯为载体的Pt,Fe及PtFe二元金属催化剂的抗CO中毒能力.结果表明,对于单金属原子Pt和Fe,Fe更易吸附在SV石墨烯上;而对于PtFe二元金属催化剂,SV石墨烯对其固定能力明显好于Pt-SV,即Pt催化剂中掺杂Fe大大增加了SV石墨烯对金属催化剂的稳定性.Pt,Fe及PtFe二元金属催化剂抗CO中毒能力的研究结果表明,PtFe-6结构的抗CO中毒能力明显强于Pt-SV,接近于Fe-SV的抗CO中毒能力,在所有二元金属催化剂中PtFe-6的稳定性最好,明显优于Pt在SV石墨烯上的稳定性.通过在Pt中加入非贵金属Fe既可提高DMFC中阳极Pt催化剂的抗CO中毒能力,又可提高其催化活性.     

(H_2O)_n(n=0～2)催化HS和HOCl反应机理的理论研究

在CCSD(T)/6-311+G(3df,2p)//M06-2X/6-311+G(3df,2p)水平上研究了(H_2O)n(n=0~2)催化HS和HOCl的反应机理.结果表明,HS与HOCl反应中HS夺取HOCl上的H原子形成产物H_2S和ClO.在无水催化时,该反应存在2种不同的路径(分别经过过渡态TS1和TS2,二者互为顺反结构),对应的能垒分别为100.28和100.91kJ/mol,到达产物(H_2S+ClO)需吸收18.99kJ/mol能量,反应不易发生;在单个水分子参与时,水分子可通过形成弱相互作用或者作为H原子转移桥梁影响反应机理,获得了4种水催化路径,能垒(间于53.97~92.39kJ/mol之间)均低于无水催化过程.同时发现,在反应到达产物前,水分子可以与产物形成中间体IM,IM相对能仅为0.46kJ/mol,有利于产物形成;有2个水分子参与反应时,找到了3条催化路径,最优反应路径过渡态TS7的能垒为45.05kJ/mol,低于无水催化过程,相比单个水分子最优路径能垒(53.97kJ/mol)并无显著降低.     

四氯化硅催化氢化合成三氯氢硅机理研究

针对四氯化硅催化氢化过程采用第一性原理机理对其进行模拟研究,结果表明:没有催化剂时,SiCl4与H2反应能垒为464.45 kJ/mol,反应能量为74.94 kJ/mol,与热力学计算结果 71.85 kJ/mol一致.负载在HZSM-5分子筛上的氯化钡可催化四氯化硅氢化反应,其最具催化活性表面为(111)面;H2在BaCl2(111)面上表现排斥性;SiCl4表现为吸附性,可在BaCl2(111)表面稳定吸附并生成.SiCl3自由基,过程吸附能为448.33 kJ/mol;在催化剂BaCl2存在条件下,SiCl4与H2反应为自由基反应,反应步骤能垒为400.23 kJ/mol;氢化过程能垒降为184.97kJ/mol;催化氢化反应过程所需能量为64.20 kJ/mol.催化氢化过程反应条件相对无催化剂过程更为温和.     

n‐Butane Monomolecular Cracking on Acidic Zeolites: A Density Functional Study

采用5T簇模型,利用密度泛函理论在B3LYP/6-311+G(3df,2p)//B3LYP/6-31G(d)水平下研究正丁烷在酸性分子筛上的单分子催化裂解反应。本文重点详细研究了正丁烷在分子筛表面不同C位的脱氢反应。在B3LYP/6-311+G(3df,2p)//B3LYP/6-31G(d)水平下计算所得第一和第二位C-C键裂解的活化能垒分别为 238、217 kJ/mol。而第一第二序位脱氢反应能垒分别为296、242 kJ/mol。正丁烷不同序位脱氢反应的活化能垒相差54 kJ/mol。从计算结果可以看出,正丁烷在分子筛上催化裂解脱氢反应优先发生在第二位C原子上。此外,本文还讨论了簇模型结构与酸性的关系,结果显示改变封端Si-H键的键长的方法可以用来模拟分子筛酸性变化。最后研究了分子筛酸性变化与正丁烷催化裂解反应能垒的关系。     

水在Au1/CeO2单原子催化剂上吸附与解离的理论研究

自Haruta和Hutchings发现负载的纳米金催化剂的催化活性后,负载型金催化剂一直是非均相催化的研究重点之一.近年来,单原子催化剂因其优异的活性、选择性,超高的原子利用效率,引起了科学家们的广泛关注.越来越多的单原子金催化剂被成功制备,并被证实具有很好的催化活性.水,作为环境中最常见的物质,在实际的催化体系中往往难以避免,即使在超高真空环境中也会有痕量的水气存在.水的解离不仅是水煤气反应的重要步骤之一,而且对别的反应也有一定的促进作用.尽管水和纳米团簇催化剂之间的研究已经颇有成效,但水和单原子金催化剂之间的作用还不是非常清晰.因此,我们采用密度泛函理论从原子尺度研究了水和Au1/CeO2单原子催化剂的相互作用.我们首先研究了水在完美CeO2表面和含有一个氧空位的CeO2–x表面上的解离过程,研究发现分子态的水和解离态的水在完美CeO2表面可以共存,而一旦在表面形成氧空位后,由于较低的能垒和极大的放热,解离态的水将占据绝对优势.接下来探索了水在完美Au1/CeO2表面和含有一个氧空位的Au1/CeO2–x表面上的解离过程,发现结论恰好和CeO2表面相反.水的解离过程在完美的Au1/CeO2表面几乎是一个无能垒的过程,并且解离会放出大量的热量.而一旦在表面形成氧空位后,单原子Au的轨道处于满占状态,无法提供水的吸附位点.水的解离过程在Ce位点进行,分子吸附能与解离吸附能相当,分子态与解离态共存.为了进一步理解单原子金在水的解离过程中起到的作用,我们分析了水和Au1/CeO2之间的电子相互作用.研究结果表明,单原子金不仅为水的吸附提供了位点,金的5d轨道和水的2p轨道之间的相互作用还有效减弱了水中氧氢键的强度,使水的解离更容易进行.由此可见,在涉及到水解离的反应中,以Au1/CeO2为代表的单原子催化剂有望带来新的突破.最后,我们还测试了范德华力对研究体系的影响.研究发现尽管范德华力会使吸附能的绝对值增加,但是并不影响我们得到的结论.     

硝化甘油在α-Al_2O_3(0001)和γ-Al_2O_3(110)表面吸附的理论计算

选取硝化甘油(NG)和氧化铝(Al_2O_3)分别作为推进剂中的含能增塑剂和燃料表面的模型,研究了含硝酸酯类增塑剂与推进剂中燃烧剂表面的微观作用机理.采用基于密度泛函理论的第一性原理方法和全电子双数值基组研究了NG在α-Al_2O_3(0001)和γ-Al_2O_3(110)表面的吸附作用.计算结果表明,NG可以在α-Al_2O_3(0001)和γ-Al_2O_3(110)表面发生强烈化学吸附;吸附导致相应的O—NO_2键被明显拉长并断裂,无能垒自发产生NO_2自由基,该解离过程放出大量的热,吸附能高达约175.7 kJ/mol;NG在完全羟基化的α-Al_2O_3(0001)和γ-Al_2O_3(110)表面上的吸附明显减弱,从强烈的化学吸附转变成以氢键作用为主的物理吸附,吸附能只有约50.0 kJ/mol;而在部分羟基化的α-Al_2O_3(0001)和γ-Al_2O_3(110)表面上可以同时发生物理吸附和化学吸附,且两种机制并不存在明显的协同或催化作用.     

水在Au_1/CeO_2单原子催化剂上吸附与解离的理论研究（英文）

自Haruta和Hutchings发现负载的纳米金催化剂的催化活性后,负载型金催化剂一直是非均相催化的研究重点之一.近年来,单原子催化剂因其优异的活性、选择性,超高的原子利用效率,引起了科学家们的广泛关注.越来越多的单原子金催化剂被成功制备,并被证实具有很好的催化活性.水,作为环境中最常见的物质,在实际的催化体系中往往难以避免,即使在超高真空环境中也会有痕量的水气存在.水的解离不仅是水煤气反应的重要步骤之一,而且对别的反应也有一定的促进作用.尽管水和纳米团簇催化剂之间的研究已经颇有成效,但水和单原子金催化剂之间的作用还不是非常清晰.因此,我们采用密度泛函理论从原子尺度研究了水和Au1/CeO_2单原子催化剂的相互作用.我们首先研究了水在完美CeO_2表面和含有一个氧空位的CeO_(2-x)表面上的解离过程,研究发现分子态的水和解离态的水在完美CeO_2表面可以共存,而一旦在表面形成氧空位后,由于较低的能垒和极大的放热,解离态的水将占据绝对优势.接下来探索了水在完美Au1/CeO_2表面和含有一个氧空位的Au1/CeO_(2-x)表面上的解离过程,发现结论恰好和CeO_2表面相反.水的解离过程在完美的Au1/CeO_2表面几乎是一个无能垒的过程,并且解离会放出大量的热量.而一旦在表面形成氧空位后,单原子Au的轨道处于满占状态,无法提供水的吸附位点.水的解离过程在Ce位点进行,分子吸附能与解离吸附能相当,分子态与解离态共存.为了进一步理解单原子金在水的解离过程中起到的作用,我们分析了水和Au_1/CeO_2之间的电子相互作用.研究结果表明,单原子金不仅为水的吸附提供了位点,金的5d轨道和水的2p轨道之间的相互作用还有效减弱了水中氧氢键的强度,使水的解离更容易进行.由此可见,在涉及到水解离的反应中,以Au_1/CeO_2为代表的单原子催化剂有望带来新的突破.最后,我们还测试了范德华力对研究体系的影响.研究发现尽管范德华力会使吸附能的绝对值增加,但是并不影响我们得到的结论.     

CeO_2/Pt(111)反向催化剂结构和活性的密度泛函理论研究（英文）

铈基材料因其独特的Ce~(4+)/Ce~(3+)转化性质而广泛运用于非均相催化反应中.尽管在实验和理论上对纯净二氧化铈表面的物理和/或化学性质进行了深入研究,但是与二氧化铈有关的界面结构和反应性能引起了人们的极大兴趣.其中,已有报道表明,氧化铈/金属反向催化剂相较于氧化铈、金属或者金属/氧化铈负载材料能明显提高CO催化氧化和水汽转化等反应活性.然而多数前期研究并没有从理论上给出合理解释,同时也并未说明反向催化剂中氧化铈结构(层数)和性质的关系.可以预见,因受到金属基板的影响,二氧化铈表面的物化性质,如氧空位形成能、电子分布、催化活性等必然会发生变化.本文通过库伦作用校正的密度泛函理论(DFT+U)计算,系统地研究了不同厚度的Ce O_2/Pt(111)反向催化剂几何结构和电子性质,催化CO氧化的性能.本文首先在Pt(111)载体上明确了单层Ce O_2(111)的最佳结构,然后研究随着二氧化铈厚度增加,各复合结构界面热力学稳定性、几何结构和电荷性质的变化.计算结果表明:首先,单层Ce O_2/Pt(111)比双层和三层Ce O_2/Pt(111)复合结构在界面处表现出更强的相互作用,并且其强度与界面结合结构密切相关,如界面O–Pt键的数量及其长度等;其次,氧化铈板层和Pt基板之间的接触会显著影响界面处一个氧化铈层和两个金属层内的电子分布,使氧化铈外暴露表面的氧空位形成能降低～0.3 e V,而界面氧空位形成能则显著降低1.3?1.8 e V,并且当表面上沉积≥2个氧化铈层时,氧化铈/铂复合材料的物理性能会趋向收敛;最后,通过计算单层Ce O_2/Pt(111),单层Ce O_2和模拟体相结构的三层Ce O_2(111)表面上的CO氧化过程,结果表明三者均遵循Mvk机理,并且关键步骤OC…O_s偶联的反应能垒分别是0.45,0.33和0.61 e V,表明三者的活性趋势为ML Ce O_2ML Ce O_2/Pt(111)TL Ce O_2(111).综合考虑到单层Ce O_2/Pt(111)界面处适度的二氧化铈-铂相互作用,一方面可以极大提高复合材料热力学稳定性,另一方面还成功保留了单层二氧化铈的优异催化活性,因此单层Ce O_2/Pt(111)复合材料从理论上认为是一种优异的CO氧化催化剂.     

Pd6簇与H2分子相互作用的密度泛函理论研究

通过相对论有效核势密度泛函理论计算，优化了Pd6(H)2和Pd6(H)4等簇的平衡几何结构，预测了氢分子在Pd6簇表面上的吸附行为与活化解离性质.计算结果表明，单态的Pd6簇可以活化两个氢分子；第一个H2和第二个H2吸附解离过程速率决定步骤的能垒分别是66.4和24.5kJ/mol、在形成的分子氢配合物Pd6(H2)和Pd（H)2H2中，H2主要作为给电子配体.在最稳定的二氢簇合物Pd6(H)2中，H倾向与3个Pd相互作用，形成面位氢的多核成键吸附方式.     

Mechanisms of and effect of coadsorption on water dissociation on an oxygen vacancy of the MgO(100) surface

The dissociation mechanism of a water molecule at an oxygen vacancy on the MgO(100) surface was studied by using the embedded cluster method at the DFT/B3 LYP level, while the energetic information was refined by using the IMOMO method at the CCSD level. We found that a water molecule initially adsorbs on one of the magnesium ions surrounding the vacancy site with a binding energy of 15.98 kcal mol(-1). It then can dissociate on the MgO(100) surface along two possible dissociation pathways. One pathway produces a hydroxyl group bonded to the original magnesium with a proton filling the vacancy via a transition state with a barrier of 4.67 kcal mol(-1) relative to the adsorbed water configuration. The other pathway yields two hydroxy groups; the hydroxy group originally belonging to the water molecule fills the vacancy, while the hydrogen atom binds with the surface oxygen to form the other hydroxy group. Hydrogen atoms of these hydroxy groups can recombine to form a hydrogen molecule and the surface is healed. Although the barrier (14.09 kcal mol(-1)) of the rate-controlling step of the latter pathway is higher than that of the former one, the energies of all of its stationary points are lower than that of the separated reactants (H(2)O+cluster). The effects of water coadsorption are modeled by placing an additional water molecule near the active center, which suggests that the more coadsorbed water molecules further stabilize the hydroxy species and prevent the hydrogen molecule formation through the latter pathway. The results support the photoemission spectral evidence of water dissociation on the defective MgO(100) surface at low water coverage.     

N2O decomposition on TiO2 (110) from dynamic first-principles calculations

We have carried out a systematic study of N(2)O dissociation on a TiO(2) (110) surface by means of plane-wave pseudopotential density-functional theory calculations. We have made use of both static and dynamic calculations in order to elucidate N(2)O decomposition mechanisms. We find that dissociation is not favorable on the stoichiometric surface. On the other hand, the presence of oxygen bridging vacancies make the N(2)O decomposition possible. The role of the defective surface is to provide electrons to the adsorbed molecule. We find two channels for decomposition, depending on whether the molecule is adsorbed with the O or the N end of the molecule on a vacancy. The first case is energetically downhill and proceeds spontaneously, leading to N(2) ejection from the surface and vacancy oxidation. The second case relies on the formation of an intermediate bridging configuration of the adsorbed molecule and is hindered by a small energy barrier. In this case, molecule breaking produces N(2) in the gas phase and leaves oxygen adatoms on the surface. We relate our results to recent experimental findings.     

Orbital specific chemistry: controlling the pathway in single-molecule dissociation

A scanning tunneling microscope (STM) was used to control the pathway of the dissociation of single O(2) molecules chemisorbed on Ag(110) at 13 K. Tunneling of electrons from the STM tip into the O(2) caused dissociation of the molecule, giving rise to two adsorbed O atoms separated along the [110] direction. In contrast, the ejection of electrons from the O(2) molecule produced adsorbed O atoms separated along the [001] direction. These results illustrate that control of the dissociation pathway and product formation are associated with a specific molecular orbital located at the Fermi level.     

Calorimetric and computational study of thiacyclohexane 1-oxide and thiacyclohexane 1,1-dioxide (thiane sulfoxide and thiane sulfone). Enthalpies of formation and the energy of the S=O bond

A rotating-bomb combustion calorimeter specifically designed for the study of sulfur-containing compounds [J. Chem. Thermodyn. 1999, 31, 635] has been used for the determination of the enthalpy of formation of thiane sulfone, 4, Delta(f)H(o) m(g) = -394.8 +/- 1.5 kJ x mol(-1). This value stands in stark contrast with the enthalpy of formation reported for thiane itself, Delta(f)H(o) m(g) = -63.5 +/- 1.0 kJ x mol(-1), and gives evidence of the increased electronegativity of the sulfur atom in the sulfonyl group, which leads to significantly stronger C-SO2 bonds. Given the known enthalpy of formation of atomic oxygen in the gas phase, Delta(f)H(o) m(O,g) = +249.18 kJ x mol(-1), and the reported bond dissociation energy for the S=O bond in alkyl sulfones, BDE(S=O) = +470.0 kJ x mol(-1), it was possible to estimate the enthalpy of formation of thiane sulfoxide, 5, a hygroscopic compound not easy to use in experimental calorimetric measurements, Delta(f)H(o) m(5) = -174.0 kJ x mol(-1). The experimental enthalpy of formation of both 4 and 5 were closely reproduced by theoretical calculations at the G2(MP2)+ level, Delta(f)H(o) m(4) = -395.0 kJ x mol(-1) and Delta(f)H(o) m(5) = -178.0 kJ x mol(-1). Finally, calculated G2(MP2)+ values for the bond dissociation energy of the S=O bond in cyclic sulfoxide 5 and sulfone 4 are +363.7 and +466.2 kJ x mol(-1), respectively.     

Adsorption of H2O,OH, and O on CuCl(111) Surface: A Density Functional Theory Study

The adsorption of H2O molecule and its dissociation products, O and OH, on CuCl(111) surface was studied with periodic slab model by PW91 approach of GGA within the framework of density functional theory. The results of geometry optimization indicate that the top site is stable energetically for H2O adsorbed over the CuCl(111) surface. The threefold hollow site is found to be the most stable adsorption site for OH and O, and the calculated adsorption energies are 309.5 and 416.5 kJ/mol, respectively. Adsorption of H2O on oxygen-precovered CuCl(111) surface to form surface hydroxyl groups is predicted to be exothermic by 180.1 kJ/mol. The stretching vibrational frequencies, Mulliken population analysis and density of states analysis are employed to interpret the possible mechanism for the computed results.     

A temperature-dependent relative-rate study of the OH initiated oxidation of n-butane: the kinetics of the reactions of the 1- and 2-butoxy radicals

The kinetics of the reactions of 1-and 2-butoxy radicals have been studied using a slow-flow photochemical reactor with GC-FID detection of reactants and products. Branching ratios between decomposition, CH3CH(O*)CH2CH3 --> CH3CHO + C2H5, reaction (7), and reaction with oxygen, CH3CH(O*)CH2CH3+ O2 --> CH3C(O)C2H5+ HO2, reaction (6), for the 2-butoxy radical and between isomerization, CH3CH2CH2CH2O* --> CH2CH2CH2CH2OH, reaction (9), and reaction with oxygen, CH3CH2CH2CH2O* + O2 --> C3H7CHO + HO2, reaction (8), for the 1-butoxy radical were measured as a function of oxygen concentration at atmospheric pressure over the temperature range 250-318 K. Evidence for the formation of a small fraction of chemically activated alkoxy radicals generated from the photolysis of alkyl nitrite precursors and from the exothermic reaction of 2-butyl peroxy radicals with NO was observed. The temperature dependence of the rate constant ratios for a thermalized system is given by k7/k6= 5.4 x 10(26) exp[(-47.4 +/- 2.8 kJ mol(-1))/RT] molecule cm(-3) and k9/k8= 1.98 x 10(23) exp[(-22.6 +/- 3.9 kJ mol(-1))/RT] molecule cm(-3). The results agree well with the available experimental literature data at ambient temperature but the temperature dependence of the rate constant ratios is weaker than in current recommendations.     

A theoretic insight into the catalytic activity promotion of CeO2 surfaces by Mn doping

In this paper, we investigated the primary reduction and oxygen replenishing processes over Mn substitutionally doped CeO(2)(111) surfaces by density functional theory with the on-site Coulomb correction (DFT + U). The results indicated that Mn doping could make the surface much more reducible and the adsorbed O(2) could be effectively activated to form superoxo (O(2)(-)) and/or peroxo species (O(2)(2-)). The Mn doping induced the Mn 3d-O 2p gap state instead of Ce 4f acting as an electrons acceptor and donor during the first oxygen vacancy formation and O(2) replenishing, which helped to lower the formation energy of the first and second oxygen vacancies to -0.46 eV and 1.40 eV, respectively. In contrast, the formation energy of a single oxygen vacancy in the pure ceria surface was 2.08 eV and only peroxo species were identified as the O(2) molecule adsorbed. Our work provides a theoretical and electronic insight into the catalytic redox processes of Mn doped ceria surfaces, which may help to understand the enhanced catalytic performances of MnO(x)-CeO(2) oxides, as reported in previous experimental works.     

Nature of point defects on SiO2/Mo(112) thin films and their interaction with Au atoms

We have studied by means of periodic DFT calculations the structure and properties of point defects at the surface of ultrathin silica films epitaxially grown on Mo(112) and their interaction with adsorbed Au atoms. For comparison, the same defects have been generated on an unsupported silica film with the same structure. Four defects have been considered: nonbridging oxygen (NBO, [triple bond]Si-O(*)), Si dangling bond (E' center, [triple bond]Si(*)), oxygen vacancy (V(O), [triple bond]Si-Si[triple bond]), and peroxo group ([triple bond]Si-O-O-Si[triple bond]), but only the NBO and the V(O) centers are likely to form on the SiO(2)/Mo(112) films under normal experimental conditions. The [triple bond]Si-O(*) center captures one electron from Mo forming a silanolate group, [triple bond]Si-O(-), sign of a direct interaction with the metal substrate. Apart from the peroxo group, which is unreactive, the other defects bind strongly the Au atom forming stable surface complexes, but their behavior may differ from that of the same centers generated on an unsupported silica film. This is true in particular for the two most likely defects considered, the nonbridging oxygen, [triple bond]Si-O(*), and the oxygen vacancy, [triple bond]Si-Si[triple bond].     

Chemisorption and dissociation of single oxygen molecules on Ag110

The chemisorption of single oxygen molecules on Ag110 and the dissociation of the adsorbed molecules induced by tunneling electrons were studied at 13 K using a variable-low-temperature scanning tunneling microscope. Two predominant types of chemisorbed O2 molecules were identified, one with the O2 molecular axis aligned along the [001] direction of the substrate [O2(001)], and the other with the molecular axis aligned along the [110] direction [O2(110)]. Tunneling of electrons between the scanning tunneling microscope tip and O2(001) caused the molecule either to rotate or dissociate, depending on the direction of electron tunneling. In contrast, electron tunneling caused O2(110) to dissociate regardless of tunneling direction. In addition to O2(001) and O2(110), several other oxygen species and their dynamical behaviors were observed.     

Ab initio cluster calculations on the electronic structure of oxygen vacancies at the polar ZnO(0001) surface and on the adsorption of H2, CO, and CO2 at these sites

Oxygen vacancies at the polar O terminated (0001) surface of ZnO are of particular interest, because they are discussed as active sites in the methanol synthesis. In general, the polar ZnO surfaces are stabilized by OH groups, therefore O vacancies can be generated by removing either O atoms or OH or H2O groups from the surface. These defects differ in the number of electrons in the vacancy and the number of OH groups in the neighborhood. In the present study, the electronic structure and the adsorption properties of four different types of oxygen vacancies have been investigated by means of embedded cluster calculations. We performed ab initio calculations on F+ like surface excitations for the different defect types and found that the transition energies are above the optical band-gap, while F+ centers in bulk ZnO show a characteristic optical excitation at 3.19 eV. Furthermore, we studied the adsorption of CO2 and CO at the different defect sites by DFT calculations. We found that CO2 dissociates at electron rich vacancies into CO and an O atom which remains in the vacancy. At the OH vacancy which contains an unpaired electron CO2 adsorbed in the form of CO2-, while it adsorbed as a linear neutral molecule at the H2O defect. CO adsorbed preferentially at the H2O defect and the OH defect, both with a binding energy of 0.3 eV.