ZnGeP2晶体中的晶格振动模拟与光谱分析

ZnGeP₂晶体在9~10 μm的光学吸收限制了其在中远红外波段的应用,该波段吸收与其晶格振动有关。本文通过理论计算与实验相结合的方法,解释了晶体红外截止边和9 μm附近吸收峰的物理机制。通过布里奇曼法生长出ZnGeP₂单晶,并测试生长得到的ZnGeP₂晶体的变温拉曼光谱和变压拉曼光谱,基于第一性原理方法计算了ZnGeP₂布里渊区中心的振动频率,并计算了不同压力下晶体的晶格常数和拉曼位移峰的位置。实验结果与理论计算结果表明:温度升高使得其振动模发生红移,且振动模强度减弱,半峰全宽变大,而压力增大则会引起ZnGeP₂晶体振动模发生蓝移,振动模强度减弱,半峰全宽变大。     

高压下ReB2的结构特性及弹性性质

本文采用密度泛函理论中的赝势平面波法计算了ReB₂的P6₃/mmc晶体结构(即hP6-ReB₂)的结构特性及弹性性质。在计算了hP6-ReB₂的平衡结构参数后,从热力学、动力学及机械力学三方面验证了其结构稳定性。研究发现,hP6-ReB₂在高压下的弹性系数、各个弹性模量均随压强的增加而增大。泊松比显示hP6-ReB₂表现为脆性。三种类型的弹性波随压强的变化趋势显示hP6-ReB₂为弹性各向异性晶体。经估算,hP6-ReB₂结构的维氏硬度约为38.2 GPa。电子态密度揭示了hP6-ReB₂的Re—B和B—B之间存在着强共价键,并且随着压强的增加共价键逐渐增强。     

Co元素掺杂CrSi2的第一性原理计算

采用基于密度泛函理论的第一性原理赝势平面波方法,对Co掺杂CrSi₂的几何结构、电子结构和光学性质进行了计算与分析.结果表明,掺杂后的CrSi₂晶格常数无明显变化,禁带宽度增大.由于Co元素3d电子的影响,在费米能级附近出现了杂质能级.掺杂后的CrSi₂复介电函数虚部在低能方向发生红移,在小于1.20 eV,大于2.41 eV的能量范围内光跃迁强度增强.吸收系数的主峰向高能方向移动,峰值增大,在小于1.38 eV,大于3.30 eV的能量范围改善了CrSi₂对红外光子的吸收.光电导率的主峰向高能方向移动,在小于1.16 eV,大于2.36 eV的能量范围内光电导率增强,说明掺杂Co元素后改善了CrSi₂特别是红外光区的光电性质,计算结果为CrSi₂光电器件的研究制造提供了理论依据.     

稀土掺杂萤石结构卤化物晶体团簇结构研究

稀土掺杂萤石卤化物在国民经济、国防建设等领域发挥着不可替代的作用。萤石卤化物特殊的晶体结构导致稀土离子团聚，目前针对稀土离子团聚的系统研究还比较少。本文以稀土掺杂萤石卤化物为研究对象，采用第一性原理计算系统研究了从稀土离子单体到高阶团簇的结构特征、演变规律、联系及其影响因素。研究发现，稀土离子单体中心1|0|0|1₁(C_4v)和1|0|0|1₂(C_3v)稳定性随离子半径变化而改变，且不同晶体的变化趋势不同，与晶格畸变分析结果一致。晶格畸变与库仑作用相互耦合决定了电荷补偿间隙卤离子的占位倾向性，即C_4v和C_3v中心的相对稳定性。此外，共价效应使得PbF₂和SrCl₂晶体单体中心结构及其稳定性与CaF₂、SrF₂和BaF₂不同。研究还揭示了晶体离子性和晶胞尺寸对单体中心能量差斜率的影响。文中还研究了稀土离子高阶团簇的结构，其稳定性演变规律与单体中心相对...     

Mg-N阴阳离子共掺杂SnO2的第一性原理研究

基于密度泛函理论,利用第一性原理计算Mg-N阴阳离子双受主共掺杂SnO₂的电子结构、电荷密度分布和缺陷形成能.Mg、N分别取代SnO₂晶体中的Sn和O,掺杂浓度分别为4.17at;、2.08at;,Mg-N键之间的共价性明显高于Sn-O键,富氧条件下,Mg-N共掺杂的缺陷形成能为2.67 eV,有利于进行有效的受主替代掺杂.Mg单受主掺杂SnO₂时,增加了带隙宽度,费米能级进入价带,Mg-N共掺杂SnO₂时,带隙窄化,表现出明显的p型导电类型.     

Sc、Ce掺杂CrSi2的电子结构与光学性质的第一性原理

采用基于密度泛函理论的第一性原理赝势平面波方法对Sc、Ce单掺和共掺后CrSi₂的几何结构、电子结构、复介电函数、吸收系数和光电导率进行了计算。结果表明:Sc、Ce掺杂CrSi₂的晶格常数增大,带隙变小。本征CrSi₂的带隙为0.386 eV,Sc、Ce单掺及共掺CrSi₂的禁带宽度分别减小至0.245 eV、0.232 eV、0.198 eV,费米能级均向低能区移动进入价带。由于Sc的3d态电子和Ce的4f态电子的影响,Sc、Ce掺杂的CrSi₂在导带下方出现了杂质能级。掺杂后的CrSi₂介电函数虚部第一介电峰峰值增加且向低能方向移动,说明Sc、Ce掺杂使得CrSi₂在低能区的光跃迁强度增强,Sc-Ce共掺时更明显。Sc、Ce掺杂的CrSi₂吸收边在低能方向发生红移,在能量大于21.6 eV特别是在位于31.3 eV的较高能量附近,本征CrSi₂几乎不吸收光子,Sc单掺和Sc-Ce共掺CrSi₂吸收光子的能力有所增强,并在E=31.3 eV附近形成了第二吸收峰。说明掺杂Sc、Ce改善了CrSi₂对红外和较高能区光子的吸收。在小于3.91 eV的低能区掺杂后的CrSi₂光电导率增加。在20.01 eV<E<34.21 eV时,本征CrSi₂光电导率为零,但Sc、Ce掺杂后的体系不为零,掺杂拓宽了CrSi₂的光响应范围。研究结果为CrSi₂基光电器件的应用与设计提供了理论依据。     

(AlxGa1-x)2O3结构、电子和光学性质的第一性原理研究

本文采用基于密度泛函理论的第一性原理计算了不同Al掺杂浓度β-Ga₂O₃(即(Al_xGa_1-x)₂O₃)的晶体结构、电荷密度分布、能带结构、态密度和光学性质，并对本征β-Ga₂O₃和不同Al掺杂浓度的β-Ga₂O₃的计算结果进行了分析对比。结果表明，随着Al掺杂浓度的增加，(Al_xGa_1-x)₂O₃的晶格常数和键长均单调减小，而带隙逐渐增大。β-Ga₂O₃导带底上方存在主要由Ga 4s和Al 3p轨道组成的中间带，Al掺杂在此中间带引入杂质能级，从而导致带隙增加。同时，Al的引入使态密度向高能侧偏移了近3 eV,也导致了带隙的增加。根据光学性质的计算结果，在掺杂Al后，介电函数的虚部和吸收系数均观察到明显的蓝移现象。这是由价带顶中的O 2p...     

Er掺杂MnBi2Te4晶体生长及其微结构研究

MnBi₂Te₄是首次被发现的一种本征磁性拓扑绝缘体，具有重要的研究意义。本文通过在MnBi₂Te₄晶体中进行稀土元素掺杂，合成了Er掺杂MnBi₂Te₄晶体，Er原子进入晶格并取代Mn位。在晶体制备过程中，考虑到目前晶体制备工艺周期较长，生成物存在Bi₂Te₃助熔剂等杂质的问题，对晶体制备工艺进行了优化探索。XRD测试结果表明，利用改进工艺制备的Er掺杂MnBi₂Te₄晶体结晶性能良好，不含杂质相。磁电输运测量结果显示，少量Er掺杂MnBi₂Te₄晶体的磁性增强，掺杂样品在25.2 K发生反铁磁相变。使用原子力显微镜对Er掺杂MnBi₂Te₄晶体层间距进行了研究，发现层间距为单层MnBi₂Te₄的整数倍。通过拉曼测试研究了Er掺杂MnBi...     

FeNi、NiMnCo及其复合触媒中Ⅰb型金刚石的生长特性

本文以Ni₇₀Mn₂₅Co₅和Fe₆₄Ni₃₆合金及其复合合金作为触媒,采用高温高压温度梯度法在5.6 GPa压力下,对不同温度下沿(100)晶面生长的Ⅰb型金刚石的生长特性进行了研究,研究表明:以Fe₆₄Ni₃₆触媒合成出的金刚石在以(111)晶面为主的晶形高温生长范围内出现了一段约50 K范围的裂晶生长区,而以Ni₇₀Mn₂₅Co₅触媒合成的金刚石在生长温度范围内,特别是在以(111)晶面为主的晶体生长高温区域内容易出现连晶缺陷;高温下Fe₆₄Ni₃₆触媒过度熔融可能是晶体容易产生裂晶的原因,Ni₇₀Mn₂₅Co₅触媒熔体黏性较低可能是容易形成连晶的原因;采用两种触媒复合的方式有效避免了裂晶和连晶的产生;拉曼光谱表征发现连晶的晶体内部质量与单晶的晶体质量相近,裂晶中晶格畸变和杂质较多,晶体内应力较大,复合触媒体系合成的金刚石晶体内应力小,质量好。     

高压对Ti2AlX(X=C,N)结构、弹性和电子性质的影响

采用第一性原理方法,对比研究了Ti2AlC和Ti2AlN在高压下的结构、弹性和电子性质.结果表明,Ti2 AlC和Ti2AlN的品格常数a、c和体积V均随着外压的增大减小,但二者变化规律略有不同,都体现了材料的各向异性.通过对弹性常数、体模量、剪切模量、杨氏模量等弹性性质的分析,发现它们均随外压的增加而增大,并验证了Ti2AlC和Ti2AlN在0～50 GPa范围内的力学稳定性.此外,还从电子态密度的角度考察了Ti2AlC和Ti2AlN的电子性质,认为它们均具有共价键和金属键的双重特性,并发现在0 ～ 50 GPa范围内压力对态密度影响较小.本文计算结果与已有实验值和理论值吻合较好.     

Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressure

Nearly perfect crystals of III–V compounds are grown by a new LPE method which can produce homogeneous and high-quality crystals with controlled stoichiometry. Homogeneous epitaxial growth is performed at fixed temperature with a temperature difference in a melt, under controlled vapour pressure of the group V elements. In the experiment, the fluctuation of growing temperature is ascertained to produce a number of new defects and the effect of controlled vapour pressure is investigated. It has been ascertained that an optimum vapour pressure, which is the function of growing temperature, can suppress the generation of “rooty faults” to a minimum density. There is close agreement between the optimum vapour pressure in the heat treatment of crystals to reduce the generation density of lattice defects and the optimum vapour pressure to obtain defect-free crystals in the process of crystal growth. The epitaxial layers prepared under optimum vapour pressure have the highest mobility and the lowest additional carrier concentration. The lattice constant of the epitaxially grown crystal under controlled vapour pressure also shows a minimum value at optimum pressure. This also shows that the controlled vapour pressure is important in lattice fitting of epitaxial layers. The epitaxial layers grown by the temperature difference method (TDM) under optimum control of the vapour pressure (CVP) are almost as perfect crystallographically as measured by X-ray topography. The experiments are performed for GaP and GaAs.     

Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVD

Gallium nitride (GaN) epitaxial layers were grown with different V/III ratios by varying the ammonia (NH₃) flow rate, keeping the flow rate of the other precursor, trimethylgallium (TMG), constant, in an MOCVD system. X-ray rocking curve widths of a (1 0 2) reflection increase with an increase in V/III ratio while the (0 0 2) rocking curve widths decrease. The dislocation density was found to increase with an increase in ammonia flow rate, as determined by hot-wet chemical etching and atomic force microscopy. 77 K photoluminescence studies show near band emission at 3.49 eV and yellow luminescence peaking at 2.2 eV. The yellow luminescence (YL) intensity decreases with an increase in V/III ratio. Positron annihilation spectroscopy studies show that the concentration of Ga-like vacancies increases with an increase in ammonia flow rate. This study confirms that the yellow luminescence in the GaN arises due to deep levels formed by gallium vacancies decorated with oxygen atoms.     

Elastic anomalous behavior of silica glass under high-pressure: In-situ Raman study

We study the changes in the Raman optical vibrations of pure silica glass under high-pressure up to 4.3 GPa and room temperature, namely in the elastic domain. Several mechanical anomalies, as the decrease of bulk modulus between 0 and 2 GPa, have been revealed many years ago (P.W. Bridgmann, Am. J. Sci 10 (1925) 359), but no physical experiments have explained what happens at the atomic scale. Our experiments show that gradual structural reversible rearrangement from 0 to 2 GPa leads to a more flexible material, in good agreement with molecular dynamics (MD) simulations (L. Huang, J. Kieffer, Phys. Rev. B 69 (2004) 224203). Above 2 GPa, a fast homogenization occurs.     

Hexagonal frustrated RMnO3 manganites (R = Y, Lu) under high pressure

The crystalline and magnetic structures of YMnO₃ and LuMnO₃ hexagonal manganites under pressures of 0–6 GPa and in the temperature range 10–295 K have been investigated by neutron diffraction. Application of pressure leads to a significant decrease in the ordered magnetic moment of Mn ions (at T = 10 K) from 3.27 (0 GPa) to 1.52 μ_B (5 GPa) for YMnO₃ and from 2.48 (0 GPa) to 1.98 μ_B (6 GPa) for LuMnO₃. Under high pressures, spin reorientation of Mn magnetic moments and a change in the symmetry of the antiferromagnetic structure are observed in YMnO₃. The relationship between the triangular lattice distortion parameter and the symmetry of the triangular antiferromagnetic state of RMnO₃ hexagonal manganites is discussed.     

Structural study of GeS2 glasses permanently densified under high pressures up to 9 GPa

The structures of GeS₂ glasses permanently densified under 1.5, 3.0, 4.5, 6.0 and 9.0 GPa have been investigated by means of Ge–K EXAFS, Ge–K and S–K XANES, X-ray radial distribution, Raman scattering and optical absorption. The experimental results have been analyzed based on the structures of α (high-temperature form)-, β (low-temperature form)- and II (high-pressure form)-GeS₂ crystals. The densities of permanently densified glasses increased monotonously with increasing applied-pressure until 6.0 GPa and then reached a constant value in a pressure range from 6.0 to 9.0 GPa. With increasing densification the structure of GeS₂ glass, which is an intermediate between the structures of α-GeS₂ and β-GeS₂ at atmospheric pressure, was progressively converted into a II-GeS₂-like structure with no large hollows. The red shift of optical absorption edge in the visible region that results from densification exhibited the same pressure dependence as that observed for density.     

In‐situ investigation of the temperature dependent structural phase transition in CuInSe2 by synchrotron radiation

The temperature dependent structural phase transition from the tetragonal chalcopyrite like structure to the cubic sphalerite like structure in CuInSe₂ was investigated by in‐situ high temperature synchrotron radiation X‐ray diffraction. The data were collected in 1K steps during heating and cooling cycles (rate 38 K/h). The Rietveld analysis of the diffractograms led us to determine the temperature dependence of the lattice parameters, including the tetragonal deformation, |1‐η|, and distortion |u‐¼| (η=c/2a, a and c are the tetragonal lattice constant; u is the anion x‐coordinate). The thermal expansion coefficients α_a and α_c of the tetragonal lattice constant which are related to the linear thermal expansion coefficient α_L were obtained, as were α_a of the cubic lattice constant, also α_u and α_η. The transition temperature is clearly identified via a strong anomaly in α_L. The temperature dependence of the anion position parameter was found to be rather weak, nearly α_u∼0, whereas α_η increases slightly. However, both increase strongly when approaching to within 10 K of the transition temperature (the critical region) and |1‐η| as well as |u‐¼| go to zero with |T‐T_trans|^0.2 approaching the phase transition. The cation occupancy values, derived from the Rietveld analysis, remain constant below the critical region. Close to the transition temperature, the number of electrons at the Cu site increases with a dercrease in the number of electrons at the In site with increasing temperature, indicating a Cu‐In anti site occupancy, which is assumed to be the driving force of the phase transition. At the transition temperature 67% of Cu⁺ were found to occupy the Me1 site with a corresponding 67% of In³⁺ at the Me2 site. Although full disorder is reached with 50%, this level seems to be high enough that the phase transition takes place. The order parameter of the phase transition, goes with |T‐T_trans|^β to zero with the critical exponent β=0.35(7) which is in good agreement to the critical exponent β=0.332 calculated for order‐disorder transitions according to the Ising model. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

衬底用单晶金刚石晶格随温度变化的研究

本文对CVD(Chemical Vapour Deposition, CVD)外延生长中作为衬底的高温高压(HTHP)单晶金刚石进行拉曼光谱测试,利用谱峰半高宽(FWHM)判断了衬底的结晶质量。开展了升温(室温~1 000 ℃)和降温(1 000 ℃~室温)过程中衬底晶格变化的X射线原位测量研究。实验表明:衬底的晶格常数随温度变化而变化,在1 000 ℃时因晶格变化而产生的应力大小为GPa量级。晶格常数在降温过程要比升温过程的数值大,线膨胀系数的计算结果也发现了相同的现象。根据傅里叶红外光谱仪(FT-IR)测试结果推断:造成上述变温过程中晶格变化差异的原因在于样品中氮浓度的不同,其中氮浓度越高,拉曼光谱的半高宽越大,衬底的晶格常数变化越大,线膨胀系数越大。     

Deposition of mechanically hard amorphous carbon nitride films from decomposition of BrCN. Effects of substrate cooling and pulsed rf-bias voltage

Mechanically hard amorphous carbon nitride films were formed by applying a combination of radio frequency (RF) bias voltage to the substrate and the chemical vapor deposition process using the decomposition reaction of BrCN with the microwave discharge flow of Ar. Cooling water was circulated inside the substrate stage. The maximum hardness was (17 ± 1) GPa for the film prepared under the negative RF bias voltage, −V_RF, of 30 V. This hardness was nearly twice that of the film prepared without cooling, suggesting that substrate cooling was effective for suppressing the relaxation of the internal stress of the film due to the temperature rise during the application of the RF bias voltage. Under the continuous operation of the RF bias voltage, films cannot be formed for −V_RF > 40 V because of the sputtering by the bombardment of energetic Ar⁺. Then, the RF bias voltage was applied with a pulsed operation. By using this operation films were prepared in the range of −V_RF = 40-100 V. The hardness, (36 ± 10) GPa, was obtained for the film obtained under the conditions of −V_RF = 100 V, the pulse period of 1000 s, and the pulse-on time of 800 s. The observed hardness scattered largely for the different observation points within this film; a single observation point in that film showed the maximum hardness of 46 GPa. According to the IR spectra of the films, the three-dimensional C-N network structure was developed.     

Bulk ammonothermal GaN

In this work, results of structural characterization of high-quality ammonothermal GaN are presented. Besides expected low dislocation density (being of the order of 10³ cm⁻²) the most interesting feature seems perfect flatness of the crystal lattice of studied crystals. Regardless the size of crystals, lattice curvature radius exceeds 100 m, whereas better crystals reveal radius of several hundred meters and the best above 1000 m. Excellent crystallinity manifests in very narrow X-ray diffraction peaks of full-width at half-maximum (FWHM) values about 16 arcsec.     

Elasticity, thermal expansion and compressive behavior of Mg65Cu25Tb10 bulk metallic glass

The existence of special covalently bonded short-range ordering structures in a Mg₆₅Cu₂₅Tb₁₀ bulk metallic glass (BMG) is confirmed by thermal expansion and compression behavior. Under ambient conditions the linear thermal expansion coefficient obtained is almost constant in the glassy state with a value of 4.0 × 10⁻⁵ K⁻¹. By fitting the static equation of state at room temperature under ambient conditions we find the value for bulk modulus B of 48.7 GPa, which is in excellent agreement with the experimental study by pulse-echo techniques of 44.7 GPa. Unlike many bulk metallic glasses, such as Zr- and Pd-based, which bulk modulus is much larger than 100 GPa, the value B of Mg₆₅Cu₂₅Tb₁₀ BMG falls into the range of SiO₂ and fluorozirconate glass ZBLAN. Moreover, the elastic constant of the Mg₆₅Cu₂₅Tb₁₀ BMG is almost the same as those of ZBLAN. No evidence for the high-pressure phase transitions of the Mg₆₅Cu₂₅Tb₁₀ BMG has been found up to 31.19 GPa at room temperature.