Effect of Annealing on Structural and Magnetic Properties of a Thick （Ga,Mn）As Layer

We investigate effects of annealing on magnetic properties of a thick (Ga,Mn)As layer, and find a dramatic increase of the Curie temperature from 65 to 115K by postgrowth annealing for a 500-nm (Ga,Mn)As layer.Auger electron spectroscopy measurements suggest that the increase of the Curie temperature is mainly due to diffusion of Mn interstitial to the free surface. The double-crystal x-ray diffraction patterns show that the lattice constant of (Ga,Mn)As decreases with increasing annealing temperature. As a result, the annealing induced reduction of the lattice constant is mainly attributed to removal of Mn interstitial.     

Structural and Magnetic Properties of Ultrathin Fe Films on Pt（O01） Surface

Magnetic anisotropy evolution of ultrathin Fe films grown on Pt(001)single-crystal surface is investigated by UHV in situ surface magneto-optical Kerr effect (SMOKE)measurement.After annealing at～600K，the magnetic anisotropy of Fe film switches from in-plane to perpendicular at low coverage,leading to a spin reorientation transiton (SRT).Meanwhile,in the range of 3-4 monolayer (ML) thickness,the coercivity of the Fe polar hysteresis loop decreases dramatically.Further scanning tunnelling microscopy (STM) and low energy electron diffraction (LEED) investigation correlates the magnetic properties with the film structures.We attribute this SRT to the formation of Fe-Pt ordered alloy.     

Microwave ferromagnetic properties of as-deposited Co_2FeSi Heusler alloy films prepared by oblique sputtering

The Co2 FeSi films are deposited on Si(100) substrates by an oblique sputtering method at ambient temperature. It is revealed that the microwave ferromagnetic properties of Co2 FeSi films are sensitive to sample position and sputtering power. It is exciting that the as-deposited films without any magnetic annealing exhibit high in-plane uniaxial anisotropy fields in a range of 200 Oe–330 Oe(1 Oe = 79.5775 A·m-1), and low coercivities in a range of 5 Oe–28 Oe. As a result,high self-biased ferromagnetic resonance frequency up to 4.75 GHz is achieved in as-deposited oblique sputtered films.These results indicate that Co2 FeSi Heusler alloy films are promising in practical applications of RF/microwave devices.     

Enhancement of ferromagnetic resonance in Al_2O_3-doped Co_2FeAl Heusler alloy film prepared by oblique sputtering

Large and variable in-plane uniaxial magnetic anisotropy in a nanocrystalline(Co2FeAl)97.8(Al2O3)2.2soft magnetic thin film is obtained by an oblique sputtering method without being induced by magnetic field or post annealing. The in-plane uniaxial magnetic anisotropy varies from 50 Oe to 180 Oe(1 Oe = 79.5775 A·m-1) by adjusting the sample’s position. As a result, the ferromagnetic resonance frequency of the film increases from 1.9 GHz to 3.75 GHz.     

Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO(001) films

Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO(001) films is investigated by magnetoresistance measurements. When the temperature decreases from 300K to 80K, the measured three-jump hysteresis loops turn into two-jump loops. The temperature dependence of the fourfold in-plane magnetic anisotropy constant K1, domain wall pinning energy, and an additional uniaxial magnetic anisotropy constant KUare responsible for this transformation. The strengths of K1 and domain wall pinning energy increase with decreasing temperature, but KU remains unchanged. Moreover, magnetization reversal mechanisms, with either two successive or two separate 90°domain wall propagation, are introduced to explain the multi-jump magnetic switching process in epitaxial Fe/Mg O(001) films at different temperatures.     

Magnetocrystalline Anisotropy and Magnetoelasticity of Preferentially Oriented Martensitic Variants in Ni52Mn24Ga24 Single Crystals

The magnetocrystalline anisotropy and magnetoelasticity of preferentially oriented martensitic variants in an off-stoichiometric Ni52Mn24Ga24 single crystal have been investigated.We found that the easy magnetization direction of the martensite phase in the [110] direction,and the hard magnetization exhibited in [001],the growth direction of single crystals.The temperature dependence of the anisotropy fields and constants of Ni52Mn24Ga24 have been determined.It was found that,at the martensite phase,the anisotropy field increases monotonically with decreasing temperature,but the anisotropy constant first increases rapidly and then the increasing rate becomes smaller and smaller.Based on a previous model,the present results suggest that the competition between the Zeeman energy and the magnetocrystalline anisotropy energy is mainly responsible for the magnitude of magnetic-field-induced strain in this material.     

Study on optical anisotropy properties of SiO2 films with different thermal annealing temperatures

SiO2 films are deposited on Si substrates by an ion beam sputtering technique and continuously annealed in a quartz culture dish in air at various annealing temperature ranging from 20 to 750 ℃ with a step of 100 ℃ for a fixed time of 24 h. The effects of thermal treatment on optical anisotropy properties of SiO2 films are investigated by spectroscopic ellipsometry. When the annealing temperature is 550℃, the optical anisotropy properties of SiO2 film is minimum. The obtained results indicate that the optical anisotropy properties of SiO2 films can be improved by a proper thermal annealing process.     

A Green＇s function model for ferromagnetism and spin excitations of （Ga,Mn）As diluted magnetic semiconductors

We study (Ga, Mn)As diluted magnetic semiconductors in terms of the Ruderman--Kittel--Kasuya--Yosida quantum spin model in Green's function approach. Random distributions of the magnetic atoms are treated by using an analytical average of magnetic configurations. Average magnetic moments and spin excitation spectra as functions of temperature can be obtained by solving self-consistent equations, and the Curie temperature T_C is given explicitly. T_C is proportional to magnetic atomic concentration, and there exists a maximum for T_C as a function of carrier concentration. Applied to (Ga, Mn)As, the theoretical results are consistent with experiment and the experimental T_C can be obtained with reasonable parameters. This modelling can also be applied to other diluted magnetic semiconductors.     

Magnetization Switching in a Small Disk with Shape Anisotropy

We study the precessional switching of a single domain, uniaxial magnetic disk with shape anisotropy by the micromagnetic simulation. The results show that magnetic switching can be driven by a smaller magnetic field pulse in an elliptic disk with its long semiaxis perpendicular to the easy axis than in a circular disk. The shape anisotropy can change the height of the energy barrier, thus we may obtain an optimal fast magnetization switching by tuning the aspect ratio of the disk under the thermal stability condition. The switching behavior of the elliptic and circular disks is studied in detail It is found that only properly choosing the pulse amplitude and duration can realize the fast precessional switching.     

Thickness dependent manipulation of uniaxial magnetic anisotropy in Fe-thin films by oblique deposition

The uniaxial magnetic anisotropy of obliquely deposited Fe(001)/Pd film on MgO(001) substrate is investigated as a function of deposition angle and film thickness. The values of incidence angle of Fe flux relative to surface normal of the substrate are 0°, 45°, 55°, and 70°, respectively. In-situ low energy electron diffraction is employed to investigate the surface structures of the samples. The Fe film thicknesses are determined to be 50 ML, 45 ML, 32 ML, and 24 ML(1 ML = 0.14 nm) by performing x-ray reflectivity on the grown samples, respectively. The normalized remanent magnetic saturation ratio and coercivity are obtained by the longitudinal surface magneto-optical Kerr effect. Here, the magnetic anisotropy constants are quantitatively determined by fitting the anisotropic magnetoresistance curves under different fields.These measurements show four-fold cubic anisotropy in a large Fe film thickness(50 ML) sample, but highly in-plane uniaxial magnetic anisotropies in thin films(24 ML and 32 ML) samples. In the obliquely deposited Fe films, the coercive fields and the uniaxial magnetic anisotropies(UMAs) increase as the deposition angle becomes more and more tilted. In addition, the UMA decreases with the increase of the Fe film thickness. Our work provides the possibility of manipulating uniaxial magnetic anisotropy, and paves the way to inducing UMA by oblique deposition with smaller film thickness.     

He+辐照对Ga0.94Mn0.06As薄膜铁磁性的改善

离子辐照半导体可以很好的改善半导体材料的磁学性质.用He⁺ 辐照Ga_0.94Mn_0.06As薄膜,可以较方便的调制Ga_0.94Mn_0.06As 薄膜中产生铁磁性载体的浓度.由于空穴居间而导致Ga_0.94Mn_0.06As薄膜的铁磁性, 可以通过He⁺的辐照来得到改善,其结果是Ga_0.94Mn_0.06As薄膜的矫顽力可以增加3倍多. 当He⁺辐照流强增加时, 居里温度和沿着样品面外磁化难轴方向的饱和磁场都减小了. 被辐照的Ga_0.94Mn_0.06As薄膜的电学性质和结构特征显示, He⁺辐照Ga_0.94Mn_0.06As薄膜可以有控制地改善它的铁磁性, 其结果源于He⁺辐照Ga_0.94Mn_0.06As薄膜所诱导产生电缺陷对空穴的补偿, 而不是He⁺辐照改变了Ga_0.94Mn_0.06As薄膜的结构.     

Growth and properties of magnetron cosputtering grown MnxGe1−x on Si (001)

We have grown Mn_xGe_1−x films (x=0, 0.06, 0.1) on Si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. X-ray diffraction results show there is no secondary phase except Ge in the Mn_0.06Ge_0.94 film while new phase appears in the Mn_0.1Ge_0.9 film. Nanocrystals are formed in the Mn_0.06Ge_0.94 film, determined by field-emission scanning electron microscopy. Hall measurement indicates that the Mn_0.06Ge_0.94 film is p-type semiconductor and hole carrier concentration is 6.07×10¹⁹ cm⁻³ while the Mn_xGe_1−x films with x=0 has n-type carriers. The field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the Mn_0.06Ge_0.94 film is ferromagnetic at room temperature.     

The important role of Mn in the room-temperature ferromagnetism of Mn-doped GaN films

Mn-doped GaN films (Ga_1−xMn_xN) were grown on sapphire (0 0 0 1) using Laser assisted Molecular Beam Epitaxy (LMBE). High-quality nanocrystalline Ga_1−xMn_xN films with different Mn concentration were then obtained by thermal annealing treatment for 30 min in the ammonia atmosphere. Mn ions were incorporated into the wurtzite structure of the host lattice by substituting the Ga sites with Mn³⁺ due to the thermal treatment. Mn³⁺, which is confirmed by XPS analysis, is believed to be the decisive factor in the origin of room-temperature ferromagnetism. The better room-temperature ferromagnetism is given with the higher Mn³⁺ concentration. The bound magnetic polarons (BMP) theory can be used to prove our room-temperature ferromagnetic properties. The film with the maximum concentration of Mn³⁺ presents strongest ferromagnetic signal at annealing temperature 950 °C. Higher annealing temperature (such as 1150 °C) is not proper because of the second phase Mn_xGa_y formation.     

X射线吸收谱对Ga0.946Mn0.054As薄膜中缺陷的研究

采用低温分子束外延法(LT-MBE)制备出Ga_0.946Mn_0.054As稀磁半导体(DMS)薄膜.通过X射线吸收谱(XAS)研究影响Ga_0.946Mn_0.054As薄膜性质的主要缺陷Mn间隙原子(Mn_I)和As反位原子(As_Ga).实验结果表明,在较低生长温度(T_S=200℃)下Ga_0.946Mn_{0.054 关键词： 0.946}Mn_0.054As稀磁半导体')" href="#">Ga_0.946Mn_0.054As稀磁半导体 X射线吸收谱 As反位缺陷 Mn间隙原子     

Band-edge exciton transitions in (Ga1−xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition

(Ga_1−xMn_x)N thin films grown on GaN buffer layers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors (DMSs) with band-edge exciton transitions for applications in optomagnetic devices. The magnetization curve as a function of the magnetic field at 5 K indicated that ferromagnetism existed in the (Ga_1−xMn_x)N thin films, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga_1−xMn_x)N thin film was above room temperature. Photoluminescence and photoluminescence excitation spectra showed that band-edge exciton transitions in (Ga_1−xMn_x)N thin films appeared. These results indicate that the (Ga_1−xMn_x)N DMSs with a magnetic single phase hold promise for potential applications in spin optoelectronic devices in the blue region of the spectrum.     

石榴石磁泡薄膜各向异性常数Ku和K1的转矩法测量

本文详细研究了GGG(Gd₃Ga₅O₁₂)单晶基片的磁转矩与其几何参量及有关物理参量的关系,提出了由转矩曲线测量石榴石磁泡薄膜单轴各向异性常数K_u和立方磁晶各向异性常数K₁过程中扣除基片影响的一种方法。在此基础上利用二元回归法由实测的转矩曲线求出K_u和K₁,以及K_u和K₁的温度关系曲线。 关键词：     

Magneto-optical spectroscopy of the martensitic transition in Fe48Mn24Ga28 Heusler alloys

Magneto-optical spectra of polycrystalline samples of the Fe₄₈Mn₂₄Ga₂₈ Heusler alloy undergoing martensitic transformation from the high-temperature paramagnetic austenitic to ferromagnetic martensitic phase have been studied at 50–320 K in the transversal Kerr effect geometry. A comparison of magnetooptical spectra with data obtained in magnetic measurements has demonstrated that the martensitic transition on the surface of a sample and in its bulk takes place in the same temperature interval. Magnetic anisotropy has been found in the martensitic phase driven by large multidomain inclusions of martensite in austenite. The magneto-optical signal of Fe₄₈Mn₂₄Ga₂₈ differs strongly in spectral shape from that measured in Ni-Mn-Ga.     

Martensitic transformation in as-grown and annealed near-stoichiometric epitaxial Ni2MnGa thin films

Magnetic shape memory nanostructures have a great potential in the field of the nanoactuators. The relationship between dimensionality, microstructure and magnetism characterizes the materials performance. Here, we study the martensitic transformation in supported and free-standing epitaxial Ni₄₇Mn₂₄Ga₂₉ films grown by sputtering on (0?0?1) MgO using a stoichiometric Ni₂MnGa target. The films have a Curie temperature of ~390 K and a martensitic transition temperature of ~120 K. Similar transition temperatures have been observed in films with thicknesses of 1, 3 and 4 μm. Thicker films (with longer deposition time) present a wider martensitic transformation range that can be associated with small gradients in their chemical concentration due to the high vapour pressure of Mn and Ga. The magnetic anisotropy of the films shows a strong change below the martensitic transformation temperature. No features associated with variant reorientation induced by magnetic field have been observed. Annealed films in the presence of a Ni₂MnGa bulk reference change their chemical composition to Ni₄₉Mn₂₆Ga₂₅. The change in the chemical composition increases the martensitic transformation temperature, being closer to the stoichiometric compound, and reduces the transformation hysteresis. In addition, sharper transformations are obtained, which indicate that chemical inhomogeneities and defects are removed. Our results indicate that the properties of Ni–Mn–Ga thin films grown by sputtering can be optimized (fixing the chemical concentration and removing crystalline defects) by the annealing process, which is promising for the development of micromagnetic shape memory devices.     

Structure,magnetic properties and magnetostriction of Fe81Ga19 thin films

The structure, magnetic properties and magnetostriction of Fe₈₁Ga₁₉ thin films have been investigated by using X-ray diffraction analysis, scanning electron microscope (SEM), vibrating sample magnetometer and capacitive cantilever method. It was found that the grain size of as-deposited Fe₈₁Ga₁₉ thin films is 50–60 nm and the grain size increases with increase in the annealing temperature. The remanence ratio (M_r/M_s) of the thin films slowly decreases with increase in the annealing temperature. However, the coercivity of the thin films goes the opposite way with increase in the annealing temperature. A preferential orientation of the Fe₈₁Ga₁₉ thin film fabricated under an applied magnetic field exists along 〈1 0 0〉 direction due to the function of magnetic field during sputtering. An in-plane-induced anisotropy of the thin film is well formed by the applied magnetic field during the sputtering and the formation of in-plane-induced anisotropy results in 90° rotations of the magnetic domains during magnetization and in the increase of magnetostriction for the thin film.     

Fabrication of CdMnS nanowires with high temperature ferromagnetism

Diluted magnetic semiconductor Cd_0.94Mn_0.06S nanowires were fabricated by a modified DC electrochemical method depositing in anodic aluminum oxide nanoporous templates. It was found that crystal defects induced by nonuniform distribution of manganese were improved by heat treatment. Redistribution of manganese greatly improves the magnetic properties. A magnetic order transition temperature over 300 K was observed. Coercivities of 100 and 300 Oe were measured at 300 and 45 K, respectively.