ZnSe－CdZnse多量子阱光双稳器件的研制

本文采用电化学选择性腐蚀工艺对ＧａＡｓ衬底蚀孔，在其上获得了大面积具有光滑表面的Ⅱ－Ⅵ族半导体多量子阱外延膜．通过在其表面蒸镀反射膜，制成了高质量的Ｆ－Ｐ腔，制备出ＺｎＳｅ－ＣｄＺｎＳｅ多量子阱Ｆ－Ｐ腔光双稳器件．     

金属有机化学气相外延生长1310nm偏振无关混合应变量子阱半导体光放大器研究

采用低压金属有机化学气相外延设备进行了1.3μm压应变量子阱材料、张应变量子阱材料和混合应变量子阱材料的生长研究.通过x射线双晶衍射和光致发光谱对生长材料进行测试和分析.基于四个压应变量子阱和三个张应变量子阱交替生长的混合应变量子阱（4CW3TW）结构有源区，并采用7°斜腔脊型波导结构以有效抑制腔面反射，经蒸镀减反膜后，半导体光放大器光纤光纤小信号增益达21.5dB，在1280—1340nm波长范围内偏振灵敏度小于0.6dB. 关键词： 偏振无关 应变量子阱 半导体光放大器 减反膜     

利用F-P干涉研究应变量子阱SOA的吸收性质

介绍了SOA及其应用．推导了InGaAsP／InP量子阱SOA的F-P腔的非线性传输方程．设计了F-P干涉实验测量方案，测量、研究了样品的非线性吸收系数和损耗．实验结果证明了新型材料Q（1．55）有很好的非线性光学性质，在1．55μm的工作波长下．其损耗相当小．     

干法刻蚀影响应变量子阱发光的机理研究

采用感应耦合等离子体刻蚀技术对InAsP/InP应变多量子阱和InAsP/InGaAsP应变单量子阱材料的覆盖层进行了不同厚度的干法刻蚀. 实验结果表明，干法刻蚀后量子阱光致荧光强度得到了不同程度的增强. 干法刻蚀过程不仅增加了材料表面粗糙度，同时使其内部微结构发生变化. 采用湿法腐蚀方法去除表面变粗糙对量子阱发光特性的影响，得到干法刻蚀覆盖层20 nm后应变单量子阱微结构变化和其表面粗糙度变化两个因素分别使荧光强度提高1.8倍和1.2倍的结果. 关键词： 干法刻蚀 应变多量子阱 光致发光谱 损伤     

应变多量子阱激光器的阱数与腔长

本文从理论上分析计算并给出了应变多量子阱激光器阱数与腔长的优化设计结果.考虑到多生子阱阱区的注入不均匀性,提出了一种新的分析和计算方法.以1.55μmInGaAs(P)1.5%压缩应变多量子阱激光器为例,最佳的阱数为4个,最佳腔长为500μm左右.     

氧化处理的蓝宝石基片上沉积的ZnO/MgO多量子阱的结构及光学性质研究

采用射频反应磁控溅射的方法,在经过氧化处理的Al₂O₃（0001）基片上制备了具有良好调制结构的ZnO/MgO多层膜量子阱.利用X射线反射率测量、X射线衍射分析、电子探针显微分析、原子力显微镜、透射光谱以及光致发光光谱等表征技术,研究了ZnO/MgO多量子阱的结构、表面形貌和光致发光等特性.XRD以及扫描的结果表明多层膜样品具有高c轴择优取向并且与蓝宝石基片有良好的外延关系.通过X射线反射率测量的结果得到多量子阱的调制周期,结合电子 关键词： ZnO/MgO 多量子阱 反应磁控溅射 变温光谱     

刻蚀改变InGaN/AIGaN应变多量子阱发光特性

为了分析干法刻蚀对应变多量子阱(SMQWs)发光特性的影响,采用感应耦合等离子体(ICP)刻蚀技术对金属有机物化学气相沉积(MOCVD)生长的InGaN/AlGaN应变多量子阱覆盖层表面刻蚀了约95 nm.通过光致发光(PL)特性表征发现,干法刻蚀后量子阱光致发光强度较未刻蚀量子阱光致发光强度提高了近3倍.干法刻蚀后,量子阱表面呈现高低起伏状形貌,粗糙度提高,出射光在起伏状粗糙形貌表面反复散射,从而逃逸概率增大,有助于光致发光强度增强.理论计算结果得出表面形貌变化引起的量子阱光致发光强度增强因子约为1.3倍.另外,由于所采用的感应耦合等离子体功率较小,刻蚀损伤深度几乎不会达到量子阱阱层,然而干法刻蚀过程中Ar离子隧穿到量子阱阱层内部可能形成新的发光中心,从而使量子阱的发光强度得到提高.     

量子阱共振腔增强型光电探测器的高功率特性

通过测量1.55 μm量子阱共振腔增强型光电探测器的光电流随反向电压和光功率的变化关系,以及模拟能带结构、电场分布等特性,研究了量子阱共振腔增强型光电探测器的高功率特性.分析了光电流的产生机制,测量了1.064 μm量子阱共振腔增强型光电探测器的光电响应,模拟了具有不同势垒高度的量子阱共振腔增强型光电探测器的光电响应.从实验和模拟两方面证明了量子阱的势垒高度是影响量子阱共振腔增强型光电探测器高功率特性的最主要因素.     

LP-MOVPE生长的低阈值1.3μm InGaAsP/InP压、张应变交替MQW激光器特性

本文国内首次报道了LP－MOVPE法生长高质量的压、张应变交替InGaAsP多量子阱结构的研制过程及其材料的高精度X－ray双晶摇摆衍射曲线和荧光光谱特性表征.在此材料基础之上制作的宽接触激光器阈值电流密度小于300A/cm²(腔长800μm),平面掩埋条形结构激光器平面掩埋异质结(PBH)条形结构多量子阱激光器阈值电流13～15mA.经过双腔面镀增透射膜后,其TE模与TM模自发发射谱光强差为3dBm,呈现偏振补偿特性.     

引入n型InGaN/GaN超晶格层提高量子阱特性研究

利用金属有机物化学气相淀积技术在蓝宝石衬底上生长了InGaN/GaN量子阱结构. 研究了引入n型InGaN薄层或InGaN/GaN超晶格层的量子阱特性,结果表明通过引入n型InGaN薄层或InGaN/GaN超晶格层缓解了量子阱有源区中的应力,改善了多量子阱表面形貌,减少了V型缺陷密度,而且提高了多量子阱的光致发光强度,从而也改进了LED的发光效率. 关键词： InGaN/GaN多量子阱 原子力显微镜 X射线双晶衍射 光致发光     

Femtosecond laser structuring of titanium implants

In this study we perform the first femtosecond laser surface treatment of titanium in order to determine the potential of this technology for surface structuring of titanium implants. We find that the femtosecond laser produces a large variety of nanostructures (nanopores, nanoprotrusions) with a size down to 20 nm, multiple parallel grooved surface patterns with a period on the sub-micron level, microroughness in the range of 1-15 μm with various configurations, smooth surface with smooth micro-inhomogeneities, and smooth surface with sphere-like nanostructures down to 10 nm. Also, we have determined the optimal conditions for producing these surface structural modifications. Femtosecond laser treatment can produce a richer variety of surface structures on titanium for implants and other biomedical applications than long-pulse laser treatments.     

气体-表面相互作用的分子动力学模拟研究

采用分子动力学模拟方法研究了气体分子Ar在光滑和粗糙Pt表面上的散射规律.提出了一种速度抽样方法,计算了不同温度条件下气体分子对光滑和粗糙表面的切向动量适应系数和吸附概率.结果显示：光滑表面条件下,气体分子的切向动量系数和吸附概率都随着温度的升高而降低;粗糙度对气体分子切向动量与表面的适应具有极大的促进作用,当粗糙度足够大时,切向动量适应系数的大小趋近于1.0,对温度的敏感性也逐渐降低.采用粒子束方法对气体分子在光滑和粗糙表面上的散射规律进行了定量分析.总结了散射过程中气体分子的典型轨迹和动量变化规律,将气体分子在光滑表面的散射分为两种类型：单次碰撞后散射和多次碰撞后散射.单次碰撞后散射的气体分子平均切向动量有所减小,而经过多次碰撞后散射的气体分子则倾向于保持原有的平均切向动量.对于粗糙表面,粗糙度的存在使气体分子与表面间的动量和能量适应更加充分,导致气体分子在较粗糙表面上散射后的平均切向动量大幅减小并接近于0,且气体分子在表面上经历的碰撞次数越多,其散射后的能量损失越严重.     

Wave diffraction by a concave statistically rough surface

We consider a statistically rough impedance surface that is concave on average in contrast to a plane. Backscattering from such a surface is considered based on the small perturbation theory method. The diffraction problem is divided into two parts which are considered separately: the problem of scattering by small roughness (assumed to be local) and the propagation of incident and scattered fields over a smooth large-scale concave surface. In contrast to the 'two-scale' scattering model, the zero-order unperturbed wavefield is not assumed to be specularly reflected from the local tangent plane to the smooth surface, but it is a solution of a corresponding diffraction problem. Two particular cases of smooth surfaces are considered: first, the inner surface of a concave cylinder with a constant radius and finite angular pattern, and second, a compound surface that consists of a coupled half-plane and the cylindrical surface mentioned above. In a geometrical optics limit and with propagation at low grazing angles, the analytical results for a zero-order (unperturbed) field are obtained for these two cases in the form of a series over multiple specular reflected fields. It is shown that these non-local processes lead to the essential increase in the backscattering cross section in comparison with the two-scale model and tangent-plane approach.     

Multiple time scale simulations of metal crystal growth reveal the importance of multiatom surface processes

A method for extending atomistic computer simulations of solids beyond the nanosecond time scale was used to simulate metal crystal growth on the time scale of laboratory experiments. Transitions involving concerted motion of multiple atoms on the crystal surface are found to lead to remarkably smooth growth of pure Al(100). Cu(100) is found to grow with a rougher surface, consistent with experiments. Not only is the activation energy of the multiatom Al processes surprisingly low, but vibrational entropy also favors processes where many atoms are displaced.     

Wave diffraction by a concave statistically rough surface

Abstract

We consider a statistically rough impedance surface that is concave on average in contrast to a plane. Backscattering from such a surface is considered based on the small perturbation theory method. The diffraction problem is divided into two parts which are considered separately: the problem of scattering by small roughness (assumed to be local) and the propagation of incident and scattered fields over a smooth large-scale concave surface. In contrast to the ‘two-scale’ scattering model, the zero-order unperturbed wavefield is not assumed to be specularly reflected from the local tangent plane to the smooth surface, but it is a solution of a corresponding diffraction problem. Two particular cases of smooth surfaces are considered: first, the inner surface of a concave cylinder with a constant radius and finite angular pattern, and second, a compound surface that consists of a coupled half-plane and the cylindrical surface mentioned above. In a geometrical optics limit and with propagation at low grazing angles, the analytical results for a zero-order (unperturbed) field are obtained for these two cases in the form of a series over multiple specular reflected fields. It is shown that these non-local processes lead to the essential increase in the backscattering cross section in comparison with the two-scale model and tangent-plane approach.     

The surface morphology of pyrolytic graphite irradiated by hydrogen atoms

Interaction between atomic hydrogen and pyrolytic graphite is investigated by thermal desorption spectroscopy, atomic force microscopy, and scanning tunneling microscopy. After exposure in an atomic hydrogen flow, the initially smooth graphite surface becomes rough, with a height difference of several nanometers. When heated, the samples release hydrogen and their surface is smoothed out, showing monolayer-deep etch pits. After multiple sorption-desorption cycles, both the linear sizes and the depth of the pits increase.     

Thermal conductivity of VLS-grown rough Si nanowires with various surface roughnesses and diameters

In this paper, we synthesize VLS-grown rough Si nanowires using Mn as a catalyst with various surface roughnesses and diameters and measured their thermal conductivities. We grew the nanowires by a combination vapor-liquid-solid and vapor-solid mechanism for longitudinal and radial growth, respectively. The surface roughness was controlled from smooth up to about 37 nm by the radial growth. Our measurements showed that the thermal conductivity of rough surface Si nanowires is significantly lower than that of smooth surface nanowires and decreased with increasing surface roughness even though the diameter of the smooth nanowire was lower than that of the rough nanowires. Considering both nanowires were grown via the same growth mechanism, these outcomes clearly demonstrate that the rough surface induces phonon scattering and reduces thermal conductivity with this nanoscale-hole-free nanowires. Control of roughness induced phonon scattering in Si nanowires holds promise for novel thermoelectric devices with high figures of merit.     

动载荷下金属板表面的微物质喷射

 用石英晶体传感器技术，测量了冲击波作用下铝合金（Ly-12）和纯铅样品自由表面的微物质喷射量。在冲击压力为32 GPa时，测得光洁度为3.2、0.4、0.1 μm的铝合金的微物质喷射量分别为1.53～3.28 g/m²，0.2～0.3 g/m²和0.053～0.096 g/m²，对光洁度为3.2 μm的纯铅样品，在压力为13 GPa和47 GPa时，微物质喷射量分别微26.4～42.4 g/m²和183～328 g/m²。在最高冲击压力约为20 GPa时，做了多次冲击下的微物质喷射量测量，发现比单次冲击加载下的喷射量有很大的减少。结果表明，微物质喷射量与自由表面的加工条件、局部熔化和加载方式等因素有关。     

Heat transfer at evaporation of falling films of Freon mixture on the smooth and structured surfaces

The paper presents the results of experimental investigation of heat transfer and hydrodynamics of falling films of binary mixtures of R21 and R114 freons on the surfaces with complex configuration. The vertical tubes of 50-mm diameter with the smooth and structured surfaces, made of D16T alloy, were used as the working sections. The range of film Reynolds number at the inlet to the working section was Re =10÷155. The image of wave surface of the falling liquid film was visualized and recorded by a high-speed digital video camera. At evaporation the heat transfer coefficients on the smooth and structured surfaces are determined by the liquid flow rate and weakly depend on the heat flux. At low liquid flows, the heat transfer coefficients on the structured surface decrease in comparison with the smooth surface because of liquid accumulation and enlargement of efficient thickness in microtexture channels. At high liquid flows, a change in the structure of the wave film surface leads to an increase in heat transfer coefficients in comparison with the smooth surface.