Structural, magnetic and electronic structure studies of Mn doped TiO2 thin films

We report structural, magnetic and electronic structure study of Mn doped TiO₂ thin films grown using pulsed laser deposition method. The films were characterized using X-ray diffraction (XRD), dc magnetization, X-ray magnetic circular dichroism (XMCD) and near edge X-ray absorption fine structure (NEXAFS) spectroscopy measurements. XRD results indicate that films exhibit single phase nature with rutile structure and exclude the secondary phase related to Mn metal cluster or any oxide phase of Mn. Magnetization studies reveal that both the films (3% and 5% Mn doped TiO₂) exhibit room temperature ferromagnetism and saturation magnetization increases with increase in concentration of Mn doping. The spectral features of XMCD at Mn L_3,2 edge show that Mn²⁺ ions contribute to the ferromagnetism. NEXAFS spectra measured at O K edge show a strong hybridization between Mn, Ti 3d and O 2p orbitals. NEXAFS spectra measured at Mn and Ti L_3,2 edge show that Mn exist in +2 valence state, whereas, Ti is in +4 state in Mn doped TiO₂ films.     

Instability of magnetism and conductivity in CMR manganites: role of Mn-site doping and thermal cycling

The magnetic and transport properties of the manganites with the perovskite structure are mainly characterized by a competition between ferromagnetism and antiferromagnetism, and between a metallic like and an insulating behavior. Charge and orbital ordering, and phase separation play a prominent role in the appearance of such properties, since they can be modified in a spectacular manner by external factors, making the different physical properties metastable. There we describe two effects that deeply modify those properties, the doping of Mn sites and the thermal cycling under a magnetic field.The doping of Mn sites by various magnetic cations—Cr, Co, Ni, Ru, Rh, Ir—destroys charge/orbital-ordering and induces ferromagnetism and metallicity in the antiferromagnetic matrix of the manganites. The magnetic phase diagram of the systems Ln_1−xCa_xMnO₃ is considerably modified by such doping. The metastability of the magnetic states is explained in terms of models based on the electronic structure of the doping elements in connection with a possible valence fluctuation.The thermal cycling is also a spectacular effect, observed in chromium doped manganites. For instance, an increase of resistivity by several orders of magnitude can be observed by thermal cycling under a magnetic field, whereas no effect is obtained in the corresponding undoped material. This behavior is interpreted in terms of strains induced charge localization, at the interface between ferromagnetic/antiferromagnetic domains in the antiferromagnetic matrix.     

Structural, magnetic and electronic transport properties of MnxGe1−x/Ge(0 0 1) films grown by MBE at 350 °C

We report on the structural, magnetic and electronic transport properties of thin Mn_xGe_1−x films grown at 350 °C. Isolated Mn₅Ge₃ nanoclusters, about 100 nm in size, were formed at the top surface of the film, dominating the magnetic properties of the whole film. Electronic transport properties show Mn doping effect indicating the presence of substitutional Mn ions dispersed in the Ge host, contributing to the formation of a Mn_xGe_1−x diluted phase. Electrical behaviour indicates a saturation effect with the raise of the nominal Mn concentration in the film, above x ≅ 0.03.     

Theoretical and experimental investigation on structural and electronic properties of Al/O/Al,O-doped WS2

Effects of the doping atom (O, Al, and (Al, O)) on structural and electronic properties of the monolayer WS₂ have been studied by using first-principles calculations. Results show that the covalent character of W–S bonding has been enhanced after doping. Meanwhile, W–O, Al–S and W–S bonds of (Al, O) co-doped WS₂ monolayer have higher covalent character compared with O-doped and Al-doped WS₂ monolayer of this work. After doping with Al (or Al, O) atoms, Fermi level moves close to the valence band and the dopant atoms produce the defect energy levels, indicating that Al doped and (Al, O) co-doped WS₂ monolayer both have p-type conductivity. O-doped and (Al, O) co-doped WS₂ ultrathin films was prepared on Si substrates. Results of Raman spectra show the formation of the O-doped and (Al, O) co-doped WS₂ films. Moreover, compared with the pure WS₂, the approximate reduction of 0.43 eV and 0.46 eV for W 4f and S 2p in binding energy after (Al, O) co-doped shows that p-type doping of (Al, O) co-doped WS₂ has been verified.     

High spin state of Mn in an ideal monolayer on Ag(001)

We studied the magnetic properties of ultra-thin Mn films deposited on Ag (001) held at 80 K with soft X-ray absorption and magnetic circular dichroism. The observed shape and branching ratio of the Mn 2p absorption edge as a function of Mn coverage demonstrate that, up to , the Mn adopts a stable high spin state similar to the Mn atom Hund's rule ⁶ S _5/2 ground state. Above this coverage a rapid transition from localized high spin to itinerant low spin behavior of the Mn 3d electrons is evidenced. Magnetic circular dichroism shows no sign of long range ferromagnetic order in these films at 80 K. The data, first confirm the large atomic-like local magnetic moment, and second are in line with the in-plane antiferromagnetic order, reported recently (Phys. Rev. B 57, 1141 (1998)), for Mn in the nearly ideal on-top Mn monolayer formed by 0.9 ML deposited at 80 K. Received: 4 May 1998     

Tunable electronic behavior in 3d transition metal doped 2H-WSe2

Structural and electronic properties of 3d transition metal Sc, Ti, Cr and Mn incorporated 2H-WSe₂ have been systematically investigated by first-principles calculations based on density functional theory. The calculated formation energies reveal that all the doped systems are thermodynamically more favorable under Se-rich condition than W-rich condition. The geometry structures almost hold that of the pristine 2H-WSe₂ albeit with slight lattice distortion. More importantly, the electronic properties have been significantly tuned by the dopants, i.e., metal and semimetal behavior has been found in Sc, Ti and Mn-doped 2H-WSe₂, respectively, semiconducting nature with narrowed band gap is expected in Cr-doped case, just as that of the pristine 2H-WSe₂. In particular, magnetic character is realized by incorporation of Mn impurity with a total magnetic moment of 0.96 μ_B. Our results suggest chemical doping is an effective way to precisely tailor the electronic structure of layered transition metal dichalcogenide 2H-WSe₂ for target technological applications.     

Structure and magnetic properties of Sn1−xMnxO2

The microstructure and magnetic properties have been investigated systematically for Sn_1−xMn_xO₂ polycrystalline powder samples with x=0.02-0.08 synthesized by a solid-state reaction method. X-ray diffraction revealed that all samples are pure rutile-type tetragonal phase and the cell parameters a and c decrease monotonously with the increase in Mn content, which indicated that Mn ions substitute into the lattice of SnO₂. Magnetic measurements revealed that all samples exhibit room temperature ferromagnetism. Furthermore, magnetic investigations demonstrate that magnetic properties strongly depend on doping content, x. The average magnetic moment per Mn atom decreases with increase in the Mn content, because antiferromagnetic super-exchange interaction takes place within the neighbor Mn³⁺ ions through O²⁻ ions for the samples with higher Mn doping. Our results indicate that the ferromagnetic property is intrinsic to the SnO₂ system and is not a result of any secondary magnetic phase or cluster formation.     

X-ray absorption and emission spectroscopic investigation of Mn doped ZnO films

The electronic structure of (Zn,Mn)O films with different Mn concentrations has been investigated by element-selective soft X-ray absorption and emission spectroscopy. The band gap narrowing of (Zn,Mn)O with increase of Mn concentration (<20% Mn) is attributed to the Mn doping and sp-d exchange interactions. According to analysis of the O Kα and resonant Mn L_2,3 X-ray emission spectra, the splitting of Mn 3d subbands is related to Mn-derived states. It indicates that ferromagnetic coupling in (Zn,Mn)O can be taken into account to be carrier-induced. The presence of antiferromagnetism in the heavier Mn-doped films can be explained in terms of the existence of MnO secondary phases.     

Interatomic exchange in Mn-doped III-V semiconductors

Density-functional calculations are used to determine the electronic structure and magnetic properties of dilute magnetic semiconductors with the composition X_1−xMn_xN (X=Al, Ga, In, x=6.25% and 12.5%). Emphasis is on the interatomic exchange as a function of the Mn-Mn distance. Our superlattice calculations show that the Mn dopants are spin-polarized with a half-metallic band gap and a magnetic moment of 4 μ_B per Mn atom at x=6.25 and 12.5%. The Mn (3d) bands lie in the band gap but partially hybridize with valence band or N 2p electrons, depending on the group-III element and on the spin direction. To calculate the exchange interaction parameters J_ij, we have used a Green-function approach. The interaction between Mn atoms extends over several interatomic interactions and is mediated by nitrogen (2p) electrons. The exchange is always ferromagnetic and largest for the first nearest neighbors, but substantial ferromagnetic interactions persist over Mn-Mn distances up to sixth nearest neighbors in the considered supercell.     

Compare of the electronic structures of F- and Ir-doped SmFeAsO

The electronic structures of Fe-based superconductor SmFeAsO_1−xF_x and SmFe_1−yIr_yAsO are compared through X-ray photoemission spectroscopy in this study. With fluorine or iridium doping, the electronic structure and chemical environment of the SmFeAsO system were changed. The fluorine was doped at an oxygen site which introduced electrons to a reservoir Sm–O layer. The iridium was doped at an Fe site which introduced electrons to a conduction Fe–As layer directly. In a parent material SmFeAsO, the magnetic ordering corresponding to Fe3d in the low-spin state is suppressed by both fluorine and iridium doping through suppressing the magnetism of 3d itinerant electrons. Compared to fluorine doping, iridium doping affected superconductivity more significantly due to an iridium-induced disorder in FeAs layers.     

Growth and electronic properties of ultra-thin Ag films on Ni(1 1 1)

We studied the growth mode and electronic properties of ultra-thin silver films deposited on Ni(1 1 1) surface by means of scanning tunnelling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES). The formation of the 4d-quantum well states (QWS) was analysed within the phase accumulation model (PAM). The electronic structure of the 1 ML film is consistent with the silver layer which very weakly interacts with the supporting surface. The line-shape analysis of Ag-4d_xz,yz QWS spectrum support the notion of strong localization of these states within the silver layer. The asymmetry of the photoemission peaks implies that the decay of the photo-hole appears to be influenced by the dynamics of the electrons in the supporting surface.     

Effect of the main-group elements on the electronic structures and magnetic properties of Heusler alloys Mn2NiZ (Z=In, Sn, Sb)

The magnetic properties and electronic structure of Mn₂NiZ (Z=In, Sn, Sb) have been studied. The magnetic structure of these alloys is mainly determined by the main-group element Z instead of the distance between the Mn atoms. Electronic structure calculations suggest that Mn₂NiIn and Mn₂NiSn are both ferrimagnets with antiparallel alignment between the Mn moments. But this antiferromagnetic coupling is weakened by the increasing number of valence electrons of the Z atoms. When it comes to Mn₂NiSb, a ferromagnetic coupling between the Mn atoms is observed. Mn₂NiSn and Mn₂NiSb have been synthesized successfully. Their M_s at 5 K agree well with the theoretical value.     

Half-metallic ferrimagnetism in Full-Heusler alloy Mn2CuMg

In the paper Ab initio electronic structure calculations are applied to study the electronic structure and magnetism properties of a new Mn-based Heusler alloy Mn₂CuMg. We take into account both possible L 2₁ structures (CuHg₂Ti and AlCu₂Mn types). The CuHg₂Ti-type structure is found to be energetically more favorable than the AlCu₂Mn-type structure and presents half-metallic ferrimagnetism. However, the case of exchanging X with Y atoms in generic formula loses its half-metallicity due to the symmetric surroundings. Calculations show that their total spin moment is −1μ_B for a wide range of equilibrium lattice constants and the total spin magnetic moment is attributed mainly to the two Mn atoms, while the Cu atom is almost non-magnetic. A small total spin moment origins from the antiparallel configurations of the Mn partial moments. The CuHg₂Ti-type Mn₂CuMg alloy keeps a 100% of spin polarization of conduction electrons at the Fermi level, thus opening the way to engineer new half-metallic alloys with the desired magnetic properties.     

FLAPW-GGA calculations of the influence of Mn, Fe, and Co impurities on the electronic and magnetic properties of layered oxychalcogenides LaCuSO and LaCuSeO

The electronic and magnetic properties of oxychalcogenides LaCuSO and LaCuSeO with a layered ZrCuSiAs-type structure doped with impurity atoms M = Mn, Fe, and Co have been predicted using the first-principles FLAPW-GGA method. It has been shown that a partial substitution of 3d ^{n < 9} metal atoms for copper atoms in the structure of the initial matrix leads to the transition of the oxychalcogenides (nonmagnetic semiconductors) to the state of a magnetic half-metal with 100% spin polarization of near-Fermi electrons. In this case, the magnetic and conducting properties of the LaCu_{1 ? x} M _x S(Se)O systems are determined by the states of the [Cu₂(S,Se)₂] blocks with magnetic impurities separated by nonmagnetic semiconducting [La₂O₂] blocks.     

Magnetism, magnetocaloric effect and positive magnetoresistance in Fe-doped antipervoskite compounds SnCMn3−xFex (x=0.05-0.20)

The effects of Fe substitution on the structure, magnetic properties, magnetocaloric effect and positive magnetoresistance (MR) effect in antipervoskite compounds SnCMn_3−xFe_x (x=0.05-0.20) have been investigated systematically. Partial substitution of Fe for Mn leads to the monotonic reduction in both the Curie temperature T_C and saturated magnetization (M_S). It can be attributed to the reduction of electronic density of state at the Fermi energy by Fe-doping. The maximum values of magnetic entropy change (−ΔS_M) and positive MR gradually decrease as x increases, due to the broadening of magnetic phase transition. The refrigerant capacity increases initially with x≤0.05, then decreases gradually as x increases further, which is suggested to originate from the competition between the decreasing −ΔS_M and broadening temperature span. Our result indicates that the chemical doping on Mn site is an effective method for manipulating the properties of antiperovskite compounds AXMn₃.     

Tunable exchange bias in La1.5Sr0.5CoMnO6 double perovskite doped with nonmagnetic Ga ions

The crystal structure, electronic structure, and magnetic behaviors of nonmagnetic Ga ions doped double perovskite La_1.5Sr_0.5CoMnO₆ single phase crystals have been investigated. Different from the traditional magnetic dilution effect of nonmagnetic doping, Ga doping in La_1.5Sr_0.5CoMnO₆ enhances the ferromagnetic (FM) exchange interaction of Co³⁺-O-Mn³⁺. Moreover, both conventional and spontaneous exchange bias (EB) effects can be tuned by modulating the Ga doping content, which is accompanied by the variation of the Co^3+/4+ and Mn^3+/4+ and the effective magnetic moment. The EB field and magnetization can be improved by nonmagnetic Ga³⁺ doping with content lower than 0.2. The evolution of conventional and spontaneous EB effects in La_1.5Sr_0.5Co_1-xGa_xMnO₆ can be understood in terms of the unidirectional interface anisotropic coupling between FM/anti-FM, and/or FM/spin glass, which is affected by antisite disorder, spin glass, and the uncompensated coupling between Co and Mn.     

The electronic properties tuned by the phase transition between the semiconducting and metallic phase of monolayer MoS2/WS2

Using first-principles methods, we systematically investigate the electronic properties and atomic mechanism of the monolayer MoS₂/WS₂ homo-junction structure, which contains different phase structures, either the semiconducting hexagonal (H) structure or metallic trigonal (T) structure. Through tuning the size of the lateral homo-junction structure of either MoS₂ or WS₂, it can produce different boundaries which induce different phase transferred styles. More interestingly, the electronic structures of homo-junction structures can also be tuned by changing the size of the armchair and zigzag shapes of nanoribbons. The homo-junction structure of either MoS₂ or WS₂ exhibits alterable band structure and band edge position with the changing of the size. The strong dependence of the band offset on the sizes of the homo-junction monolayer also implicates a possible way of patterning quantum structures with size engineering.     

Room-temperature ferromagnetism in Sn1−xMnxO2 nanocrystalline thin films prepared by ultrasonic spray pyrolysis

Sn_1−xMn_xO₂ (x=0.01-0.05) thin films were synthesized on quartz substrate using an inexpensive ultrasonic spray pyrolysis technique. The influence of doping concentration and substrate temperature on structural and magnetic properties of Sn_1−xMn_xO₂ thin films was systematically investigated. X-ray diffraction (XRD) studies of these films reflect that the Mn³⁺ ions have substituted Sn⁴⁺ ions without changing the tetragonal rutile structure of pure SnO₂. A linear increase in c-axis lattice constant has been observed with corresponding increase in Mn concentration. No impurity phase was detected in XRD patterns even after doping 5 at% of Mn. A systematic change in magnetic behavior from ferromagnetic to paramagnetic was observed with increase in substrate temperature from 500 to 700 °C for Sn_1−xMn_xO₂ (x=0.01) films. Magnetic studies reveal room-temperature ferromagnetism (RTFM) with 3.61×10⁻⁴ emu saturation magnetization and 92 Oe coercivity in case of Sn_1−xMn_xO₂ (x=0.01) films deposited at 500 °C. However, paramagnetic behavior was observed for the films deposited at a higher substrate temperature of 700 °C. The presence of room-temperature ferromagnetism in these films was observed to have an intrinsic origin and could be obtained by controlling the substrate temperature and Mn doping concentration.     

Zn1-xMnxS(001)稀磁半导体薄膜的能量稳定性、磁性和电子结构

通过基于广义梯度近似的总能密度泛函理论研究不同Mn掺杂浓度的ZnS(001)薄膜的电学和磁学特性. 计算单个Mn原子和两个Mn原子处于各种掺杂位置及不同的磁耦合状态时的能量稳定性.计算了单个Mn原子掺杂和两个Mn原子掺杂的ZnS(001)薄膜的态密度. 不同掺杂组态的p-d杂化的程度不同. 不同掺杂组态,Mn原子所处的晶场环境不同,所以不同掺杂组态的Mn的3d分波态密度峰的劈裂有很大的不同. 掺杂两个Mn原子时,得到三种稳定组态的基态都是反铁磁态. 分析了以上三种能量稳定的组态中,两个Mn原子在不同磁耦合状态下的3d态密度图. 当两原子为铁磁耦合时,由于d-d电子相互作用,使反键态的态密度峰明显加宽. 随着Mn掺杂浓度的增加,Mn原子有相互靠近,并围绕S原子形成団簇的趋势. 对于这样的组态,Mn原子之间为反铁磁耦合能量更低.     

Magnetic and electronic structure studies of the perovskite oxide Nd2/3Sr1/3MnO3 from the first principle calculation

Generalized gradient approximation (GGA) and GGA + U (U denotes on-site Coulomb interactions) methods are applied to investigate the magnetic and electronic structures of the perovskite oxide Nd_2/3Sr_1/3MnO₃. Under GGA the compound prefers ferrimagnetic ordering in which Nd sublattice is spin-antiparallel to Mn sublattice. Nd 4f states cross over the Fermi level under GGA, leading the ferrimagnetic Nd_2/3Sr_1/3MnO₃ to a metallic character. The on-site Coulomb interactions should be included to emphasize the localized feature of Nd 4f states. Under GGA + U, the spins of Nd and Mn sublattices tend to be parallel in the ground state, and fully spin-polarized Mn 3d electrons yield a half-metallic band structure for the ferromagnetic Nd_2/3Sr_1/3MnO₃. The ferromagnetic coupling between Nd and Mn sublattices is ascribed to the super-exchange interaction between Nd 4f and Mn 3d (t2g) electrons via O 2p electrons.