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Structural, magnetic and electronic transport properties of MnxGe1−x/Ge(0 0 1) films grown by MBE at 350 °C |
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| Authors: | L Morresi JP Ayoub M Ficcadenti A Ronda F D’Orazio |
| Institution: | a CNISM-INFM - Department of Physics, University of Camerino, Via Madonna delle Carceri, I-62032 Camerino, Italy b L2MP-CNRS, Polytech Marseille, I.M.T. Technopole de Château Gombert, 13451 Marseille Cedex 20, France c CNR-INFM - Department of Physics, University of L’Aquila, Via Vetoio-Coppito, I-67010 L’Aquila, Italy |
| Abstract: | We report on the structural, magnetic and electronic transport properties of thin MnxGe1−x films grown at 350 °C. Isolated Mn5Ge3 nanoclusters, about 100 nm in size, were formed at the top surface of the film, dominating the magnetic properties of the whole film. Electronic transport properties show Mn doping effect indicating the presence of substitutional Mn ions dispersed in the Ge host, contributing to the formation of a MnxGe1−x diluted phase. Electrical behaviour indicates a saturation effect with the raise of the nominal Mn concentration in the film, above x ≅ 0.03. |
| Keywords: | Germanium Manganese TEM Magnetic films Electronic transport measurement Semiconducting films |
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