透射光偏振度与散射次数关系的研究

偏振态与散射次数的关系对于提取深入组织内部的后向散射光有很重要的价值.本文分析了透射光的偏振度与光在介质中的散射次数的关系,给出了偏振光完全失去偏振态所需的散射次数,并用直接散射的实验方法进行了验证,得出当散射次数为14次时偏振光将失去其偏振特性的结论.     

光源的偏振态对动态光散射颗粒测量结果的影响

研究了在动态光散射纳米颗粒测量中,光源的偏振态对测量结果的影响。采用了粒径为100nm、体积浓度为0.5%的标准颗粒作为样品,使He-Ne激光通过起偏器得到0°～180°方向的偏振光,测量了散射光强、偏振度和粒径测量值的变化,计算了相应的粒径均值偏差和标准差,并将这一结果与无偏振He-Ne激光入射进行了比较。结果表明,当入射光为线偏振光时,偏振方向垂直于散射面时测量效果最好;另一方面,由于颗粒系散射迭加造成的散射光偏振度降低,使线偏振光源与无偏振光源产生的散射光偏振度无明显差别,证明在测量中可以使用无偏振He-Ne激光代替。     

利用表面散射光偏振差异的目标识别技术

 分析了不同物体散射场偏振特性的差异，依据消光定理的矢量微扰解方法将物体散射场分为零阶和高阶解，零阶反射光可完全保持入射光的偏振度，高阶散射则会导致偏振度的降低，因而总散射光的偏振度依赖于散射表面的粗糙程度。提出了利用斯托克斯-穆勒体系测量物体消偏特性的方法并通过实验对一些物体作了测量，实验结果表明：光滑表面可以较好地保留入射光偏振度，而粗糙表面则有很强的消偏作用，因此偏振成像方法可有效地提高目标探测和识别效率。     

混浊介质中线偏振光和圆偏振光的后向漫散射特征

以标准的组织模型Intralipid脂肪乳溶液为研究对象,采用CCD偏振成像系统,通过测量该混浊介质的后向漫散射光的斯托克斯矢量,深入研究了不同方位的线偏振光及不同旋向的圆偏振光入射时,后向漫散射光的特征.研究结果表明：对不同的入射偏振态,后向漫散射强度、偏振度的空间分布具有方位选择性,强度和偏振度的大小随距离入射点的距离增加而减小;介质浓度增加,后向散射强度增加,偏振度减小,且同一浓度下,圆偏振光的偏振度总是高于线偏振光.     

一种改进激光偏振主动成像的建模及理论分析

提出一种改进激光偏振主动成像的实验方法,给出实验装置原理图,详细分析实验装置的成像原理。在分析目标Mueller矩阵测量方法的基础上,给出改进后激光偏振成像装置偏振度和强度的计算公式,从理论上证明了该方法的可行性。然后针对实验仪器的要求分析了实验装置存在的误差,以及Cassegrain望远镜对目标散射光的消偏现象。该方法与利用双旋转波片技术（DRRT）测量目标散射光的偏振度和强度相比可以降低对实验装置的精度要求,同时可以提高测量速度,不需要进行16次测量,只需1次就可以测量出目标散射光的偏振度和强度,进而得到偏振度和强度图像。     

基于洛匈棱镜的偏振度测量与空间退偏度分析方法研究

空间平均型退偏要求退偏后的光束不仅具有低偏振度,还要求避免偏振态的空间带状连续分布.为了实现光束偏振度的测量和空间退偏度的观察,提出基于洛匈棱镜的偏振度测量方法,理论推导了偏振度和各个光功率测量值之间的关系,设计了实验装置,并与全偏振度测量方法进行对比.结果显示:两种测量方法得到的偏振度相对偏差为0.192%,但洛匈棱镜能将o光和e光在空间分离,能对光束偏振态的空间分布进行观测.基于洛匈棱镜的偏振度观测方法结构简单,操作方便,在偏振度和偏振态的空间分布的同时观测中有重要应用.     

基于偏振门的动态光散射颗粒测量法的研究

为了解决动态光散射纳米颗粒测量技术无法测量高浓度颗粒粒径的难题,提出了一种基于偏振门的动态光散射测量法。从动态光散射和Mie理论出发,理论分析了在高浓度溶液下多重散射效应对散射光偏振态和颗粒粒度测量结果的影响。根据散射光偏振特点,结合偏振门检测技术,改进了传统的动态光散射光学系统。实验研究了在低浓度和高浓度溶液时,不同偏振角度下的散射光强和粒度测量值,完善了散射光的偏振理论。采用90°偏振门检偏,通过各种浓度下的实验,证明了方法的可行性。该方法较之目前同类方法具有原理和结构简单,系统易于维护的特点。     

一种测量散射光偏振度的新方法

利用二氧化硅微粒样品作散射粒子场,寻求测量散射光偏振度的新方法。实验结果表明,用线偏振光分两次测量的偏振叠加法,比传统用自然光入射,偏振片作检偏器测量偏振度的方法更优越,不但节省了测量成本,而且提高了测量的范围。     

群体粒子散射光偏振特性的研究

在Mie散射理论的基础上分析了群体粒子散射的偏振特性,并用两种不同直径(0.26 μm,0.55 μm)的球形粒子作为散射介质进行了相关实验,比较了群体粒子散射光垂直与水平偏振光的偏振度.实验发现:散射光的偏振度随粒子直径的变化呈现出一定的规律性,直径大的粒子散射光在水平方向的偏振度小于直径小的粒子;而垂直方向的偏振度却完全相反,直径大的粒子大于直径小的粒子.     

激光照明下黑硅表面的散射偏振特性研究

为了研究人工微结构材料表面的偏振特性,利用波长为532nm的激光器、精密旋转台和弱光照度计,自行搭建表面散射特性的测量系统。以黑硅为被测样品,测量样品不同姿态时对散射光偏振特性的影响,并对比分析随入射光入射角、样品方位角及俯仰角对散射光偏振分布的影响。实验结果表明,散射光的偏振度与表面微结构的周期性,以及入射角度有关。本文的研究对散射光的偏振特征应用在探测的分析领域上提供一定的实验基础。     

核磁共振碳谱研究:烷烃化学位移和(CSS)与分子路径指数矢量(VPM)

系统研究了核磁共振碳谱和化学位移规律及其定量构谱关系(QSSR).本文研究了一组十元素分子路径指数矢量VPM,并发现它与烷烃化学位移和CCS有良好线性相关性.采用多元线性回归进行准确估计与预测,结果优良.     

Reduced s-d model with antiferromagnetically coupled impurity spins

An antiferromagnetic equivalent-neighbour Heisenberg interaction H_i between impurity spins is added to the reduced s-d Hamiltonian H_r previously introduced by simplifying the Kondo s-d exchange Hamiltonian H_K. Asymptotic mean-field theory is developed for H_r + H_i, in the presence and absence of external magnetic field, and applied to (La_1−xCe_x)Al₂ alloys. Specific heat c_i(T) and zero-field susceptibility χ_i(0,T) curves for (La_1−xCe_x)Al₂ are depicted. The coupling constants of H_r + H_i and conduction bandwidth are adjusted so that T_c temperatures for x = 0.2, 0.1 are equal to the experimental values. c_i(T) exhibits a jump at T_c and is decreasing for T < T_c. χ_i(0,T) has a first order pole at T_c which corresponds to the maximum of experimental susceptibility and χ_i(0,0) > 0. These results improve those obtained earlier on the grounds of H_r theory.     

Interrelations of discrete Painlevé equations through limiting procedures

We study the discrete Painlevé equations associated to the affine Weyl group which can be obtained by the implementation of a special limits of -associated equations. This study is motivated by the existence of two -associated discrete both having a double ternary dependence in their coefficients and which have not been related before. We show here that two equations correspond to two different limits of a -associated discrete Painlevé equation. Applying the same limiting procedures to other -associated equations we obtained several -related equations most of which have not been previously derived.     

What can we learn from B→DsKπ, Bd→DsKπ and Bd→DsK decays?

We study the nonresonant three-body decays of B⁺→D^(*)−_sK⁺π⁺ and B_d→D_s^(*)−K⁰π⁺. We find that these decays can provide the information on the time-like form factors of D^(*)_sK. We also explicitly investigate B_d→D_s^(*)−K^*+ decays by discriminating the nonresonant contributions with the unknown D^(*)_s wave functions being fixed by the measured mode of B_d→D_s⁻K⁺.     

稠苯芳杂环及其烷基质子化学位移的计算

本文提出了予测稠苯芳杂环及其烷基链上质子化学位移的计算方法。 将稠苯芳杂环化合物用凯库勒式表示,计算式为为需考虑的苯环内的乙烯基效应。σ_mi,ci为各苯环的环流效应。σ_1,Hc为各芳杂环的屏蔽效应,对杂环上质子它就是该单独芳杂环上相应质子的δ值,对苯环上质子要将它分解为各结构因素的效应,即:σ_1,He=(1/2)^d-1δ_x=y(或σ_z)+σ_c-c·σ_m,H. σ_x-y与σ_z为杂原子或其基团的屏蔽效应,σ_c=c为存在于芳杂环中的乙烯基的效应,σ_m,Hc为芳杂环的环流效应,d为对不同质子所考虑的键数。有取代基时需考虑取代基的效应。计算环上烷基质子的公式为:δ=σ_p,CH3+ασ_c,CH3+βσ_t,CH3+σ_l,G σ_l,G为稠苯芳杂环基的某级效应。     

Structural phase transitions at clean and metal-covered Si(111) surfaces investigated by RHEED spot analysis

Structural phase transitions between various kinds of superlattice structures formed on a Si(111) surface have been investigated by spot analysis of reflection high-energy electron diffraction (RHEED). Reversible transitions induced by temperature changes and irreversible ones induced by metal depositions were observed. Detailed discussions on the dynamics of the phase transitions are made by quantitative analyses of integrated spot intensity and profile. For a phase transition of 7′7  1′1 structures on a clean Si(111) surface, a hysteresis with temperature difference of 5°C. between in heating and cooling processes was found in the spot intensity change, indicating a first-order transition. Hysteresis was hardly recognized, on the other hand, for transitions of Au-induced superstructures (5×2-Au or ×-Au)  1×1-Au. The spot profiles were found to be broadened during the transition of Si(111)-×-Au  1×1-Au, which was a signature of a continuous transition, while the profiles remained unchanged during the transitions of the 7×7  1×1 and 5×2-Au  1×1-Au phases. Structural conversions induced by In adsorption on the Si(111) surface kept at constant temperatures were also analyzed. The conversions at room temperature were totally dependent on the initial substrate surface structures; the 7×7 surface did not show any structural conversion with In adsorption, while the ×-In surface successively converted to a 2×2 and a × phase with coverage increase. The structural transitions at elevated temperatures were sensitively dependent on the temperatures. Sequences of transitions among the 7×7, 4×1, ×, 1×, and ×4 were quantitatively revealed as changes in RHEED spot intensity.     

Interband Stark effects in InxGa1−xAs/InyAl1−yAs coupled step quantum wells

The effects of an electric field on the interband transitions in In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells have been investigated both experimentally and theoretically. A In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well sample consisted of the two sets of a 50 Å In_0.53Ga_0.47As shallow quantum well and a 50 Å In_0.65Ga_0.35As deep step quantum well bounded by two thick In_0.52Al_0.48As barriers separated by a 30 Å In_0.52Al_0.48As embedded potential barrier. The Stark shift of the interband transition energy in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers.     

ErP5O14非晶玻璃的红外量子剪裁

研究了Er_1.0P₅O₁₄铒非晶玻璃的红外量子剪裁现象. 从吸收谱和激发光谱的计算比较中肯定了Er_1.0P₅O₁₄非晶 玻璃的1537.0 nm红外荧光为多光子量子剪裁荧光. 从Er_1.0P₅O₁₄非晶玻璃的可见和红外荧光发射光谱中发现激发²H_11/2, ⁴G_11/2和⁴G_9/2能级所导致的⁴I_13/2→⁴I_15/2量子剪裁红外荧光很强;基于自发辐射速率、无辐射弛豫速率和能量传递速率等参数的计算,对其量子剪裁机理进行了分析.发现起源于基态的强下转换能量传递{²H_11/2→⁴I_9/2,⁴I_15/2→⁴I_13/2},{⁴G_11/2→⁴I_13/2, ⁴I_15/2→²H_11/2},{⁴G_9/2→⁴F_7/2,⁴I_15/2→⁴I_13/2}和{⁴G_9/2→⁴I_13/2, ⁴I_15/2→²H_11/2}是导致Er_1.0P₅O₁₄非晶玻璃具有强的三光子和四光子量子剪裁红外荧光的原因.研究结果对改善太阳能电池效率有一定意义.