Preparation and photo-induced superhydrophilicity of composite TiO2-SiO2-In2O3 thin film

In this work, TiO₂-SiO₂-In₂O₃ composite thin films on glass substrates were prepared by the sol-gel dip coating process. X-ray diffraction (XRD), X-ray fluorescence spectroscopy (XRF) and X-ray photoelectron spectroscopy (XPS) were used to evaluate the structural and chemical properties of the films. UV-vis spectrophotometer was used to measure the transmittance spectra of thin films. The water contact angle (WCA) of thin films during UV/vis irradiation and storage in a dark place was measured by a contact angle analyzer. The results indicated that fabrication of composite film has a significant effect on transmittance and superhydrophilicity of TiO₂ films.     

Optical and hydrophilic properties of Cr doped TiO2-SiO2 nanostructure thin film

Cr doped TiO₂-SiO₂ nanostructure thin film on glass substrates was prepared by a sol-gel dip coating process. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were used to characterize the structural and chemical properties of the films. A UV-vis spectrophotometer was used to measure the transmittance spectra of the thin film. The hydrophilicity of the thin film during irradiation and storage in a dark place was measured by a contact angle analyzer. The results indicated that Cr doping has a significant effect on the transmittance and super-hydrophilicity of TiO₂-SiO₂ thin film.     

The transverse laser induced thermoelectric voltages in step flow growth （1-x）Pb(Mg1/3Nb2/3)O3-xPbTiO3 thin films

This paper reports that the transverse laser induced thermoelectric voltages (LITV) are observed for the first time in the step flow growth (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT,x = 0.20, 0.33, 0.50) thin films deposited on vicinal-cut strontium titanate single crystal substrates. Because lead magnesium niobate-lead titanate is a solid solution of lead magnesium niobate (PMN) and lead titanate (PT), there are two types of signals. One is wide with a time response of a microsecond, and the other superimposed with the wide signal is narrow with a time response of a nanosecond. The transverse LITV signals depend on the ratio of PMN to PT drastically. Under the irradiation of 28-ns pulsed KrF excimer laser with the 248-nm wavelength,the largest induced voltage is observed in the 0.50Pb(Mg1/Nb2/3)O3-0.50PbTiO3 films. Moreover, the effects of film thickness, substrates, and tilt angles of substrates are also investigated.     

Deposition of ZnO multilayer on LiNbO3 single crystals by DC-magnetron sputtering

Zinc oxide (ZnO) thin films were deposited on LiNbO₃ (LN) single crystals with 200 nm thicknesses by three different ways, where coating of zinc (Zn) film was followed by thermal oxidation for four, two, and one steps with 50, 100, and 200 nm thicknesses repeatedly. Sample, which was produced at 4-step of deposition and oxidation of Zn layer, showed high transmittance and low structural defect due to a lower photoluminescence intensity and Urbach energy. Average grain size in X-ray diffraction (XRD), scanning electron microscopy (SEM) micrograph, and atomic force microscopy (AFM) images for multilayer of ZnO was lower than monolayer of ZnO thin films. Applying multilayer coating technique leads to decrease of surface roughness and scattering on light on surface and fabrication of LiNbO₃ waveguides with lower optical loss.     

Ferroelectric properties of bilayer structured Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) thin films on Pt/TiO2/SiO2/Si substrates

Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films with large remanent polarization and SrBi₂Ta₂O₉ (SBT) thin films with excellent fatigue-resisting characteristic have been widely studied for non-volatile random access memories, respectively. To combine these two advantages_, bilayered Pb(Zr_0.52Ti_0.48)O₃/SrBi₂Ta₂O₉ (PZT/SBT) thin films were fabricated on Pt/TiO₂/SiO₂/Si substrates by chemical solution deposition method. X-ray diffraction patterns revealed that the diffraction peaks of PZT/SBT thin films were completely composed of PZT and SBT, and no other secondary phase was observed. The electrical properties of the bilayered structure PZT/SBT films have been investigated in comparison with pure PZT and SBT films. PZT/SBT bilayered thin films showed larger remanent polarization (2P_r) of 18.37 μC/cm² than pure SBT and less polarization fatigue up to 1 × 10⁹ switching cycles than pure PZT. These results indicated that this bilayered structure of PZT/SBT is a promising material combination for ferroelectric memory applications.     

Microstructure and tribological properties of WS2/MoS2 multilayer films

In this paper, a novel method, namely, magnetron sputtering and low temperature ion sulfurizing combined technique was used to fabricate the solid lubrication WS₂/MoS₂ multilayer films. Scanning Electron Microscopy (SEM) was used to observe the surface and worn scar morphologies. X-ray diffraction (XRD) was utilized to analyze the phase structure. The nano-hardness and elastic modulus of WS₂/MoS₂ multilayer films were surveyed by the nano-indentation tester. The friction and wear test were conducted on a ball-on-disk wear tester under dry sliding condition. The results obtained showed that the WS₂/MoS₂ multilayer films exhibited a lower friction coefficient and better wear-resistance when compared with single WS₂ film and original 1045 steel.     

PbTiO3/PbZr0.3Ti0.7O3/PbTiO3夹心结构铁电薄膜子晶层的优化

用Sol-Gel法制备了Pb_(1+x)TiO₃/PbZr_03Ti_07O₃/Pb_(1+x)TiO₃(PT/PZT/PT)夹心结构及PZT铁电薄膜,为了获得高质量的PT/PZT/PT夹心结构铁电薄膜,使用不同过量Pb配比(x)的PbTiO₃ (PT)层进行制备,以获得优化的PT子晶层.X射线 关键词： PT/PZT/PT 夹心结构 子晶 铁电薄膜     

2-2型磁电复合薄膜CoFe2O4/Pb(Zr0.53Ti0.47)O3静磁耦合

运用溶胶-凝胶法在Pt/Ti/SiO₂/Si基片上旋涂制备了2-2型CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃磁电复合薄膜．制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小．SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构．制备的复合薄膜具有较好的铁电与铁磁性能．实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势.     

Investigation on FR(LT)–FR(HT) phase transition and pyroelectric properties of pulsed laser deposited Pb(Zr0.93Ti0.07)O3 thin films

The preparation process, crystallinity and electrical properties of pulse laser deposited Pb(Zr_xTi_1−x)O₃ (PZT) thin films were investigated in this paper. PZT (x = 0.93) thin film samples deposited at different substrate temperatures were prepared. Si (1 1 0) was the substrate; Ag and YBCO were the top electrode and the bottom electrode respectively. The bottom electrode YBCO was deposited on the Si substrate by pulsed laser deposition (PLD), and then PZT was epitaxially deposited on YBCO also by PLD. After annealing, the top electrode Ag was prepared on PZT by thermal evaporation, and then the Ag/PZT/YBCO/Si structured thin films were obtained. The XRD and the analysis of their electrical characters showed that, when the substrate temperature was elevated from 600 °C to 800 °C, the crystallinity and electrical properties of PZT thin films became better and better, and the F_R(LT)–F_R(HT) phase transition of PZT (x = 0.93) thin films occurred at 62 °C. The PZT film deposited at 800 °C had the best pyroelectric properties, and when the F_R(LT)–F_R(HT) phase transition of this film occurred, the peak value of pyroelectric coefficient (p) was obtained, with a value of 1.96 × 10⁻⁶ C/(cm² K). The PZT film deposited at 800 °C had the highest remnant polarization (P_r) and the lowest coercive field (E_c), with the values of 34.3 μC/cm² and 41.7 kV/cm respectively.     

Cu2ZnSnSe4 thin films prepared by selenization of co-electroplated Cu-Zn-Sn precursors

A novel technique for growth of high quality Cu₂ZnSnSe₄ (CZTSe) thin films is reported in our work. The CZTSe thin films were fabricated onto Mo layers by co-electroplating Cu-Zn-Sn precursors followed by annealing in the selenium vapors at the substrate temperature of 550 °C. The morphology and structure of CZTSe thin films were characterized using scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and Raman scattering spectrum, respectively. The results revealed that the single phase was in the CZTSe thin films, and the other impurities such as ZnSe and Cu₂SnSe₃ were not existed though they were difficult to distinguish both from EDS and XRD.     

Multilayer Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3/Bi1.5Zn1.0Nb1.5O7 thin films for tunable microwave applications

Bi_1.5Zn_1.0Nb_1.5O₇/Ba_0.6Sr_0.4TiO₃/Bi_1.5Zn_1.0Nb_1.5O₇ tunable multilayer thin film has been fabricated by pulsed laser ablation and characterized. Phase composition and microstructure of multilayer films were characterized by X-ray diffraction, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The film has very smooth surface with RMS roughness of 1.5-2 nm and grain size of 100-150 nm. Total film thickness has been measure to be 375 nm. The BZN thin films at 300 K, on Pt(1 1 1)/SiO₂/Si substrate showed zero-field dielectric constant of 105 and dielectric loss tangent of 0.002 at frequency of 0.1 MHz. Thin films annealed at 700 °C shows the dielectric tunability of 18% with biasing field 500 kV/cm at 0.1 MHz. The multilayer thin film shows nonferroelectric behavior at room temperature. The good physical and electrical properties of multilayer thin films make them promising candidate for tunable microwave device applications.     

Preparation of CuInS2 thin films by metal-organic decomposition

Metal-organic decomposition (MOD) technique has been developed as a low cost thin film CuInS₂ preparation method for solar cell application. XRD and Raman spectra measurement revealed that deposited films contain CuInS₂. Stoichiometric films with a bandgap of 1.53 eV and an FWHM of 0.45° were obtained from a solution with Cu/In=1.5.     

Chemical bath deposition of hausmannite Mn3O4 thin films

A low-temperature chemical bath deposition (CBD) technique has been used for the preparation of Mn₃O₄ thin films onto glass substrates. The kinetic behavior and the formation mechanism of the solid thin films from the aqueous solution have been investigated. Structure (X-ray diffraction and Raman), morphological (atom force microscope), and optical (UV-vis-NIR) characterizations of the deposited films are presented. The results indicated that the deposited Mn₃O₄ thin films of smooth surface with nanosized grains were well crystalline and the optical bandgap of the film was estimated to be 2.54 eV.     

柔性Pb(Zr_(0.53)Ti_(0.47))O_3薄膜的高温铁电特性

随着柔性电子产品的迅速发展,具有优异铁电和压电性的Pb(Zr_(0.53)Ti_(0.47))O_3 (PZT)薄膜在柔性的非易失性存储器、传感器和制动器等器件中有广泛的应用前景.同时,由于外部环境越来越复杂,具有高温稳定特性的材料和器件受到越来越多的关注.本文在耐高温的二维层状氟晶云母衬底上,用脉冲激光沉积技术制备出外延的PZT薄膜,并通过机械剥离的方法,得到柔性的外延PZT薄膜.研究了Pt/PZT/SRO异质结的铁电和压电性及其高温特性,发现样品表现出优越的铁电性,剩余极化强度(P_r)高达65μC/cm~2,在弯曲104次后其铁电性基本保持不变,且样品在275℃高温时仍然保持良好的铁电性.本文为柔性PZT薄膜在航空航天器件中的应用提供了实验基础.     

Preparation of Nb doped PZT film by RF sputtering

Undoped lead zirconate titanate (PZT) and Nb doped lead zirconate titanate (PNZT) films formed on an Ir/Ti/SiO₂/Si substrate using an RF magnetron sputtering method were studied in detail. Films of about 3–4 μm thickness were deposited at a substrate temperature of 525 ^°C. X-ray diffraction measurement (XRD) shows that the obtained PZT and PNZT films are both strongly uniaxially oriented in the (100) direction of the perovskite structure, and TEM observation shows that the films have columnar structures. The addition of Nb results in changes of film electrical characteristics, particularly dielectric constant and hysteresis characteristics. Sputtered PNZT films (Nb 13 at.%) formed on silicon diaphragm structures generate 2 times more deflections than undoped PZT film formed on the same structure, thus demonstrating a superior piezoelectric performance. A sputtering method to directly form a PNZT film with high piezoelectric constant on a substrate at low temperature via electrodes finds a wide potential use in MEMS applications.     

镶嵌在SiO2薄膜中InAs纳米颗粒的Raman散射

对镶嵌在SiO₂薄膜中纳米InAs颗粒的Raman散射谱进行了研究.与大块InAs晶体相比,InAs纳米颗粒的Raman散射谱具有相似的特征,即由纵光学声子模和横光学声子模组成,但是散射峰宽化并红移.用声子限域效应解释了散射峰的红移现象,并结合InAs纳米颗粒的应力效应解释了红移量与理论值的差异. 关键词： 2薄膜')" href="#">SiO₂薄膜 InAs量子点 Raman散射     

Texture control of Pb(Zr, Ti)O3 thin films with different post-annealing processes

The non-crystalline Pb(Zr, Ti)O₃ thin films sputtered on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates at room temperature were crystallized by conventional furnace annealing (CFA) and rapid thermal annealing (RTA), respectively. It was found that the RTA process favored the (1 1 1)-preferred orientation in lead zirconate titanate (PZT) thin films while the CFA process favored the (1 0 0)-preferred orientation. The origin of the different orientation selection might be due to the different epitaxial nucleation mechanism. The long heating duration would lead to the aggregation of Pb and the formation of PbO(1 0 0) on film surface; therefore, the nucleation at the PbO(1 0 0)/PZT interface on film surface might lead to the (1 0 0)-preferred orientation. However, the nucleation at the PZT/Pt(1 1 1) electrode interface by RTA process would result in the formation of (1 1 1)-preferred orientation. The RTA-derived (1 1 1)-preferentially oriented PZT thin films exhibited a high remnant polarization of 35 μC/cm².     

A comparative study of dielectric and Raman spectroscopy of Pb(Y b1/2Ta1/2)O3 and Pb(Y b1/2Nb1/2)O3

A comparative study of the properties of two highly ordered lead based complex perovskites Pb(Y b_1/2Ta_1/2)O₃ and Pb(Y b_1/2Nb_1/2)O₃ has been carried out through x-ray diffraction, dielectric and Raman scattering measurements. These two compounds differ significantly in their structure, dielectric response and phonon vibration although the ionic radii and valencies are same for Ta and Nb. The room temperature x-ray diffraction pattern and Raman spectra show that the symmetry of lead ytterbium tantalate is lower than that of lead ytterbium niobate. The Raman spectra of Pb(Y b_1/2Ta_1/2)O₃ also indicates the presence of local distortion in the lattice which may be one of the factors responsible for the existence of a secondary transition.     

Periodicity and orientation dependence of electrical properties of [(Pb0.90La0.10)Ti0.975O3/PbTiO3]n (n = 1-6) multilayer thin films

The [(Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃]_n (PLT/PT)_n (n = 1-6) multilayer thin films were deposited on the PbO_x(1 0 0)/Pt/Ti/SiO₂/Si substrates by RF magnetron sputtering method. The layer thickness of PbTiO₃ in one periodicity kept unchanged, and the layer thickness of (Pb_0.90La_0.10)Ti_0.975O₃ is varied. The electrical properties of the (PLT/PT)_n multilayer thin films were investigated as a function of the periodicity (n) and the orientation. The studied results show that the PbO_x buffer layer results in the (PLT/PT)_n films’ (1 0 0) orientation, and the (1 0 0)-oriented (PLT/PT)_n multilayer thin films with n = 2 exhibit better pyroelectric properties and ferroelectric behavior than those of (PLT/PT)_n films with other periodicities and orientations. The underlying physical mechanism for the enhanced electrical properties of (PLT/PT)_n multilayer thin films was carefully discussed in terms of the periodicities and orientations.     

Vibrational spectroscopic studies on Ba0.8Sr0.2TiO3 thin films prepared by RF sputtering technique

Thin films of Ba_0.8Sr_0.2TiO₃ have been deposited on p-type Si substrate by radio frequency magnetron sputtering. Polycrystalline bulk Ba_0.8Sr_0.2TiO₃ sample has also been studied for comparison. X-ray diffraction patterns reveal that both the bulk sample and thin films are polycrystalline without any preferential orientation and belong to paraelectric cubic phase. We have compared the room temperature Raman and IR spectra of powder and thin films (both annealed and as-deposited) of Ba_0.8Sr_0.2TiO₃. The extra feature in the Raman spectrum for the annealed film has been explained as due to the presence of intergrain stresses from the submicron size grains in it.