单周期控制Cuk功率因数校正变换器中的中尺度不稳定现象分析

基于单周期控制的自治性,建立了描述单周期控制Cuk功率因数校正(PFC)变换器动力学行为的非线性状态平均模型.在此基础上,采用谐波平衡法得出了该系统周期平衡态的近似解析表达式,继而通过判定Floquet乘子的变化趋势,准确地预测了该变换器首次失稳时分岔点的位置和类型,揭示了系统出现中尺度不稳定现象的物理机理.研究结果表明,该变换器周期闭轨稳定性的丧失,即Neimark-Sacker分岔的发生是最终导致中尺度振荡现象产生的根本原因.最后,电路实验验证了理论分析的正确性.这些研究结果不仅揭示了单周期控制CukPFC变换器中的中尺度分岔行为的本质,而且为系统电路参数的设计提供了理论依据.     

平均电流控制型Boost功率因数校正变换器中的中频振荡现象分析

基于输入电压可用其有效值代替以及电感电流与输出电压的波动频率远低于变换器开关频率的假设,建立了用于描述平均电流控制型Boost PFC变换器动力学行为的小信号模型,研究了该变换器中的中频振荡现象问题,揭示了系统发生中频振荡现象的内在物理机理,并给出了系统发生中频振荡现象的参数边界.研究结果表明,该非线性现象不同于已发现的快尺度不稳定性现象和慢尺度不稳定性现象,其主要特征是其振荡频率介于交流输入电压线频率和开关频率之间.最后,电路实验结果证实了理论分析的正确性. 关键词： 中频振荡 平均电流控制 Boost功率因数校正变换器 小信号模型     

单周期控制Boost变换器Hopf分岔控制及电路实现

用平均模型分析了单周期控制Boost变换器的运行,分析表明在参考电压变化的情况下,单周期控制Boost变换器会出现Hopf分岔.Hopf分岔使得变换效率下降,器件应力增加.为了消除Hopf分岔,提出了采用washout滤波器的方法.建立了采用washout滤波器的单周期控制Boost变换器平均模型,对于washout滤波器中的两个新参数,可以用Routh-Hurwitz准则来确定.仿真和电路实验验证了所提方法的效果. 关键词： washout滤波器 单周期控制 Boost变换器 Hopf分岔     

基于开关电感结构的混合升压变换器非线性现象研究

将开关电感结构嵌入到传统Boost变换器中可以显著提高Boost变换器的电压传输比, 同时减少开关器件的电流应力, 降低损耗, 提高效率, 具有广阔的应用前景. 本文首次研究了基于开关电感结构的混合升压变换器的分岔和混沌现象, 导出了连续电流模式下的离散迭代映射模型, 采用分岔图分析了电路参数对系统性能的影响, 发现此变换器不仅发生了倍周期分岔、边界碰撞分岔、切分岔和阵发混沌, 还存在一种特殊的现象: 随着电容C和电感L₂的减小, 电路的运行状态并非严格经历1倍周期、2倍周期和4倍周期, 而是在4倍周期期间发生了分岔轨迹相交的情况, 在相交的一点, 变换器工作于周期3. 最后通过典型的时域波形和相轨图验证了这种特殊现象的存在. 研究结果表明, 当电路参数变化时, 基于开关电感结构的混合升压变换器比传统低维Boost变换器具有更加复杂、多样化的非线性现象. 关键词： 开关电感 混合升压变换器 离散迭代映射 混沌     

电流控制二次型Boost变换器的动力学研究

通过对二次型Boost变换器开关状态的完整描述, 推导了两个电感电流边界, 建立了电流控制二次型Boost变换器的分段光滑迭代映射模型. 对比分析了以输入电感电流或储能电感电流作为电流反馈量的非线性分岔行为. 通过稳定性和工作模式分析, 得到了电流控制二次型Boost变换器从稳定的周期1工作状态到次谐波振荡状 态转移以及从电感电流不连续导电模式到连续导电模式转移的条件, 并采用参数空间映射图, 对二次型Boost变换器的工作状态域进行了估计. 设计了实验电路, 由实验结果证明了不同的参数变化有着不同的分岔路由, 存在工作模式转移现象, 电流控制二次型Boost 变换器呈现复杂的动力学行为, 实验结果验证了理论分析的正确性. 关键词： 二次型Boost变换器 开关状态 模式转移 边界碰撞分岔     

周期切换下Chen系统的振荡行为与非光滑分岔分析

研究了不同参数Chen系统之间进行周期切换时的分岔和混沌行为.基于平衡态分析,考虑Chen系统在不同稳态解时通过周期切换连接生成的复合系统的分岔特性,得到系统的不同周期振荡行为.在演化过程中,由于切换导致的非光滑性,复合系统不仅仅表现为两子系统动力特性的简单连接,而且会产生各种分岔,导致诸如混沌等复杂振荡行为.通过Poincaré映射方法,讨论了如何求周期切换系统的不动点和Floquet特征乘子.基于Floquet理论,判定系统的周期解是渐近稳定的.同时得到,随着参数变化,系统既可以由倍周期分岔序列进入混沌,也可以由周期解经过鞍结分岔直接到达混沌.研究结果揭示了周期切换系统的非光滑分岔机理.     

约瑟夫森结中周期解及其稳定性的解析分析

针对交流激励下电阻-电容分路的约瑟夫森结,采用增量谐波平衡法推导了系统中周期解的解析表达式,并运用Floquet理论分析了周期解的稳定性.发现系统处于稳定周期状态的同时,还存在着丰富的不稳定周期解.通过计算Floquet乘数,得到了系统稳定周期解失稳时的临界参数值,并确定了系统发生的分岔类型,从理论上证明了系统随激励电流幅值的增加由倍周期分岔通向混沌.解析分析与数值计算结果具有很好的一致性. 关键词： 约瑟夫森结 增量谐波平衡法 周期解 分岔     

谷值V~2控制Boost变换器的精确建模与动力学分析

建立了谷值V2控制Boost变换器的离散迭代映射模型,在此基础上得到了输入电压、输出电容及其等效串联电阻(equivalent series resistance,ESR)变化时的分岔图,推导了不动点处的雅可比矩阵,利用特征值和最大Lyapunov指数对系统进行了稳定性分析,并验证了分岔图的正确性.重点研究了输入电压和输出电容及其ESR对谷值V2控制Boost变换器的动力学特性的影响.研究结果表明,输入电压增大时,变换器从周期1态经历1次倍周期分岔和边界碰撞分岔进入混沌状态;输出电容及其ESR具有相同的分岔路由,随着输出电容及其ESR的逐渐减小,变换器具有从周期1态经历周期2态、周期4态、周期8态、逐渐演变到混沌态的动力学行为.最后,用仿真和实验结果验证了本文理论分析的正确性.     

单相三电平H桥逆变器分岔现象的研究

三电平逆变器相较于传统的两电平逆变器具有输出电压谐波畸变率小、开关管电压应力小等优点,因而在大功率场合受到了越来越多的关注. 本文针对一种复合式单相三电平逆变器,对其中的分岔和混沌现象进行了深入的研究,建立了电流闭环比例控制下的一阶离散模型,得到了不同时间段内的频闪映射模型. 以比例系数k,负载电阻R,负载电感L及输入电压E为变化参数,研究了三电平逆变器的分岔现象：通过分岔图和李雅普诺夫指数谱分析了慢变尺度下比例系数、负载电感、负载电阻和输入电压对系统动态性能的影响;通过折叠图直观地观测到了快变尺度下不同比例系数、负载电感所导致的分岔过程. 最后搭建了Matlab/Simulink仿真模型,得到了电流闭环比例控制时电流i的时域波形,仿真结果与理论分析相一致. 研究表明,正确选择单相三电平逆变器的电路参数对于其稳定运行具有重要意义. 关键词： 三电平逆变器 频闪映射 分岔 混沌     

具有两个边界的Boost变换器分岔行为和斜坡补偿的镇定控制

电流控制型Boost变换器在较宽的电路参数下具有两个边界,建立了采用斜坡补偿电流的分段光滑迭代映射方程,并导出了轨道状态发生转移时的分界线方程,通过数值仿真得到了输入电压和斜坡补偿斜率变化时的逆分岔图和它们的动力学行为分布图.研究结果表明,随着输入电压逐步减小,Boost变换器从稳定的周期1态,经在边界1上发生边界碰撞分岔后进入连续传导模式（CCM）下的鲁棒混沌态,并经在边界2上发生边界碰撞分岔后进入不连续传导模式（DCM）下的强阵发性的弱混沌态.通过引入合适的斜坡补偿电流,Boost变换器的工作模式可以 关键词： Boost变换器 斜坡补偿 迭代映射方程 镇定控制     

Accurate capacitance-voltage characterization of organic thin films with current injection

To deal with the invalidation of commonly employed series model and parallel model in capacitance-voltage (C-V) characterization of organic thin films when current injection is significant, a three-element equivalent circuit model is proposed. On this basis, the expression of real capacitance in consideration of current injection is theoretically derived by small-signal analysis method. The validity of the proposed equivalent circuit and theoretical expression are verified by a simulating circuit consisting of a capacitor, a diode, and a resistor. Moreover, the accurate C-V characteristic of an organic thin film device is obtained via theoretical correction of the experimental measuring result, and the real capacitance is 35.7% higher than the directly measured capacitance at 5-V bias in the parallel mode. This work strongly demonstrates the necessity to consider current injection in C-V measurement and provides a strategy for accurate C-V characterization experimentally.     

Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors

We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO₂ (HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experimental measurement of electrical properties in the resistor-ferroelectric capacitor (R-FEC) circuit. Our results show that the thermodynamic coefficients α, β and γ also play a key role for the transient NC effect besides the viscosity coefficient and series resistor. Moreover, the smaller coefficients α and β, the more significant the transient NC effect. In addition, we also find that the thermodynamic process of transient NC does not obey the generally accepted viewpoint of Gibbs free energy minimization.     

Quantum group invariant fermionic gases: GLp,q(2) and SUp/q(2) invariances

We first investigate the high-temperature behavior of a two-parameter deformed quantum group fermionic gas with GL_p,q(2) symmetry, where (p,q)C×C. We then discuss both the structural and thermodynamical differences between GL_p,q(2)- and SU_r(2)-fermions with r=p/q where (p,q)R×R.     

(2+1)维Korteweg-de Vries方程的复合波解及局域激发

借助Maple符号计算软件,利用Pdccati方程(ζ′=a_0+a_1ζ+a_2ζ~2)展开法和变量分离法,得到了(2+1)维Korteweg-de Vries方程(KdV)包含q=C_1x+C_2y+C_3t+R(x,y,t)的复合波解,根据得到的孤立波解,构造出KdV方程新颖的复合波裂变和复合波湮灭等局域激发结构。     

高功率聚变磁体电源桥臂直通故障分析及仿真

高功率聚变磁体电源采用三电平中点钳位型(NPC)电压源变流器(VSC)拓扑，在变流器桥臂直通故障情况下，其直流侧电容的充放电使故障暂态过程较为复杂，为变流器故障分析带来挑战。针对这一问题，以3kV、6kA三电平IGCT大功率VSC为背景，建立了桥臂直通故障暂态等效数学模型。将整个故障过程分为直流侧电容放电和二极管导通两个阶段，详细分析了该故障情况下电压及电流的变化趋势，为后期保护方案的设计奠定基础。Matlab仿真结果表明了该分析方法的可靠性。     

Period-doubling bifurcation in two-stage power factor correction converters using the method of incremental harmonic balance and Floquet theory

In this paper, period-doubling bifurcation in a two-stage power factor correction converter is analyzed by using the method of incremental harmonic balance (IHB) and Floquet theory. A two-stage power factor correction converter typically employs a cascade configuration of a pre-regulator boost power factor correction converter with average current mode control to achieve a near unity power factor and a tightly regulated post-regulator DC-DC Buck converter with voltage feedback control to regulate the output voltage. Based on the assumption that the tightly regulated post-regulator DC-DC Buck converter is represented as a constant power sink and some other assumptions, the simplified model of the two-stage power factor correction converter is derived and its approximate periodic solution is calculated by the method of IHB. And then, the stability of the system is investigated by using Floquet theory and the stable boundaries are presented on the selected parameter spaces. Finally, some experimental results are given to confirm the effectiveness of the theoretical analysis.     

Stability and bifurcation in a voltage controlled negative-output KY Boost converter

The stability and bifurcation in a voltage controlled negative-output KY Boost converter is studied in this Letter. A glimpse at the stability and bifurcation from the power electronics simulator (PSIM) software are given. And then, its mathematical model and corresponding discrete model are derived. The stability and bifurcation of the converter are determined with the help of the loci of eigenvalues of the Jacobian matrix. It is found that the Hopf bifurcation is easy to come in this converter when the value of its energy-transferring capacitor increases. Finally, the analytical results are confirmed by the circuit experiment.     

Analysis of frequency-dependent series resistance and interface states of In/SiO2/p-Si (MIS) structures

In this work, the investigation of the interface state density and series resistance from capacitance–voltage (C–V) and conductance–voltage (G/ω−V) characteristics in In/SiO₂/p-Si metal–insulator–semiconductor (MIS) structures with thin interfacial insulator layer have been reported. The thickness of SiO₂ film obtained from the measurement of the oxide capacitance corrected for series resistance in the strong accumulation region is 220 Å. The forward and reverse bias C–V and G/ω−V characteristics of MIS structures have been studied at the frequency range 30 kHz–1 MHz at room temperature. The frequency dispersion in capacitance and conductance can be interpreted in terms of the series resistance (R_s) and interface state density (D_it) values. Both the series resistance R_s and density of interface states D_it are strongly frequency-dependent and decrease with increasing frequency. The distribution profile of R_s–V gives a peak at low frequencies in the depletion region and disappears with increasing frequency. Experimental results show that the interfacial polarization contributes to the improvement of the dielectric properties of In/SiO₂/p-Si MIS structures. The interface state density value of In/SiO₂/p-Si MIS diode calculated at strong accumulation region is 1.11×10¹² eV⁻¹ cm⁻² at 1 MHz. It is found that the calculated value of D_it (≈10¹² eV⁻¹ cm⁻²) is not high enough to pin the Fermi level of the Si substrate disrupting the device operation.