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Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors
Institution:1.Key Laboratory of Microelectronics & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;2.College of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China;3.Department of Physics and Electronic Science, Weifang University, Weifang 261061, China
Abstract:We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO2 (HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experimental measurement of electrical properties in the resistor-ferroelectric capacitor (R-FEC) circuit. Our results show that the thermodynamic coefficients α, β and γ also play a key role for the transient NC effect besides the viscosity coefficient and series resistor. Moreover, the smaller coefficients α and β, the more significant the transient NC effect. In addition, we also find that the thermodynamic process of transient NC does not obey the generally accepted viewpoint of Gibbs free energy minimization.
Keywords:transient negative capacitance (NC)  ferroelectric  hafnium-zirconium oxide  
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