Wide-Band Polarization-Insensitive High-Output-Power Semiconductor Optical Amplifier Based on Thin Tensile-Strained Bulk InGaAs

A polarization-insensitive semiconductor optical amplifier (SOA) with a very thin active tensile-strained InGaAs bu/k has been fabricated.The polarization sensitivity of the amplifier gain is less than 1 dB over both the entire range of driving current and the 3dB optical bandwidth of more than 8Onto.For optical signals of 1550nm wavelength,the SOA exhibits a high saturation output power 7.6dBm together with a low noise figure of 7.SdB, fibre-to-fibre gain of 11.5dB,and low polarization sensitivity of 0.5dB.Additionally,at the gain peak 1520nm,the fibre-to-fibre gain is measured to be 14.1 dB.     

The recent progress of functionally graded CNT reinforced composites and structures

In the last decade,the functionally graded carbon nanotube reinforced composites(FG-CNTRCs)have attracted considerable interest due to their excellent mechanical properties,and the structures made of FG-CNTRCs have found broad potential applications in aerospace,civil and ocean engineering,automotive industry,and smart structures.Here we review the literature regarding the mechanical analysis of bulk CNTR nanocomposites and FG-CNTRC structures,aiming to provide a clear picture of the mechanical modeling and properties of FG-CNTRCs as well as their composite structures.The review is organized as follows:(1)a brief introduction to the functionally graded materials(FGM),CNTRCs and FG-CNTRCs;(2)a literature review of the mechanical modeling methodologies and properties of bulk CNTRCs;(3)a detailed discussion on the mechanical behaviors of FG-CNTRCs;and(4)conclusions together with a suggestion of future research trends.     

Effect of In_xGa_(1-x)As Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-Ⅱ Quantum Dots Grown on InP (100) Substrates

The effects of indium composition in InGaAs interlayer on morphology of GaSb/InGaAs quantum dots(QDs)and on optical properties of GaSb/fnGaAs QD material system are studied.AFM images show that the change of the indium composition in InGaAs interlayer can alter the GaSb QD morphology.It is found that low indium composition in InGaAs interlayer can promote the formation of QDs,while high indium composition can inhibit the formation of QDs.The photoluminescence(PL) spectra of GaSb/InGaAs QDs at 8K under low excitation power indicate that the third root of the excitation power is linear with the peak position,which provides a direct evidence for their luminescence belonging to type-Ⅱ material optical transition.The PL spectra at 8K under an excitation power of 90 mW show that the optical properties of GaSb/InGaAs QD material system can be affected by the indium composition in the InGaAs interlayer,and the PL peak position is linear with the indium composition.The optical properties of GaSb/InGaAs QDs can be improved by adjusting the indium composition in the InGaAs interlayer.     

Effect of InxGal-xN ＂continuously graded＂ buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition

In this paper we report on the effect of an lnxGal xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, continuously graded composition, and the combination of constant and continuously graded composition are used. Surface morphologies, crystalline quality, indium incorporations, and relaxation degrees of InGaN epilayers with different buffer layers are investigated. It is found that the InxGa1-xN continuously graded buffer layer is effective to improve the surface morphology, crystalline quality, and the indium incorporation of the InGaN epilayer. These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations.     

Controlling electric field distribution by graded spherical core-shell metamaterials

This paper investigates analytically the electric field distribution of graded spherical core-shell metamaterials, whose permittivity is given by the graded Drude model. Under the illumination of a uniform incident optical field, the obtained results show that the electrical field distribution in the shell region is controllable and the electric field peak’s position inside the spherical shell can be confined in a desired position by varying the frequency of the optical field as well as the parameters of the graded dielectric profiles. It has also offered an intuitive explanation for controlling the local electric field by graded metamaterials.     

Design and numerical simulation of novel DBRs

In this paper, a numerical simulation of the traditional graded distributed Bragg reflector (DBR) and a design of the novel DBR with short period superlattices (SPSs DBR) used by vertical cavity surface emitting laser (VCSEL) are reported. First, the optical characteristic matrix of the graded DBRs is derived using the theories of thin film optics. Second, its reflective spectrum is numerical simulated and it is found that the simulative results are similar with the experimental data. The difference of the cavity mode position between the experimental and simulative data is discussed. Finally, based on the simulative results of graded DBR, a novel DBR with 4.5-pair GaAs/AlAs SPSs is designed, and its reflective spectrum is numerical simulated and analyzed.     

Ripening of single-layer InGaAs islands on GaAs（001）

The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time.After annealing for 15 min,the ripening of InGaAs islands is completed.The real space scanning tunneling microscopy(STM) images show the evolution of InGaAs surface morphology.A half-terrace diffusion theoretical model based on thermodynamic theory is proposed to estimate the annealing time for obtaining flat morphology.The annealing time calculated by the proposed theory is in agreement with the experimental results.     

Dielectric responses of graded composites having generalized gradation profiles

Under an external uniform electric field, the dielectric response of graded cylindrical composites having generalized dielectric profile inclusions is investigated. The generalized dielectric profile of graded cylindrical inclusion is expressed in the form, $\varepsilon _i (r)=c(b+ r)^k\e^{\beta r}$ where $r$ is the radial variable of the cylindrical inclusions and $c$, $b$, $k$ and $\beta $ are parameters. The local potential solution of generalized dielectric profile graded composites is derived by means of the power series method and the effective dielectric response is predicted in the dilute limit. Moreover, from the result of generalized profile, the analytical solutions of local potentials and the effective responses of graded composites having three cases of dielectric profiles, i.e., the exponential profile $\varepsilon_\i (r)=c\e^{\beta r}$, the general power law profile $\varepsilon_\i (r)=c(b+r)^k$ and the profile $\varepsilon_\i (r)=cr^k\e^{\beta r}$, are sorted out, respectively. In the dilute limit, our exact results are used to test the validity of differential effective dipole approximation (DEDA) for estimating the effective response of graded cylindrical composites, and it is shown that the DEDA is in excellent agreement with the exact result.     

Dielectric Response of Graded Spherical Composites

We investigate the effective dielectric responses of graded spherical composites under an external uniform electric field by taking the dielectric function of spherical inclusion, εi = cr^ke^βr, where r is the inner distance of a point inside the particle from the centre of the spherical particle in the coordination. In the dilute limit, our exact result is used to test the validity of differential effective dipole approximation （DEDA） for estimating the effective response of graded spherical composites and it is shown that the DEDA is in excellent agreement with the exact result.     

Bianchi Type-I Cosmology with Cosmic String and Bulk Viscosity

Some locally rotationally symmetric Bianchi type=I cosmological solutions for a cloud string with bulk viscosity are presented. In the first case, an equation of state ρ = κλ and the relation between metric potentials R = AS^m are considered, and the solution represents shearing non-rotating model with the bulk viscosity ζ∝ρ^1/2, where ρ is the rest energy density of the cloud of strings with particles attached to them, λ is the tension density of the cloud of strings, ζ is the coefficient of the bulk viscosity, R and S are only the functions of time t, while A and κ are constant. In the second case, the constant coefficient of bulk viscosity is considered.