La0.67-xSmxSr0.33MnO3(0.40≤x≤0.60)体系的TCR研究

通过测量La0.67-xSmxSr0.33MnO3(x=0.40,0.50,0.60)体系的M～T曲线和ρ～T曲线,研究了La位Sm掺杂对体系电阻温度系数 (TCR)的影响.实验结果表明:Sm掺杂引起的电阻率曲线急剧变化,导致大的TCR出现;TCR在x=0.40时出现峰值,随Sm掺杂的增加,TCR值逐渐减小.体系出现大的TCR,来源于Sm掺杂引起的晶格畸变和额外磁性.     

一种新型的红外成像材料

基于超大磁阻(CMR)材料在绝缘体—金属转变(I—M)点附近的巨大电阻变化，本研究了La位Gd掺杂对La0.7-xGdxSr0.3MnO3(x=0.20、0.30、0.40、0.50)电阻温度系数(TCR)的影响。实验结果表明：Gd掺杂将引起电阻率曲线的急剧变化，导致出现大的TCR；而且随Gd掺杂的增加，TCRR在x＝0．30出现峰值，然后随掺杂量增加逐步降低，大的TCR行为将成为新型的红外成像材料。     

(La1-xYx)2/3Ca1/3MnO3(x=0～0.3)体系的磁特性与平均稀土离子尺寸效应的研究

研究了(La1-xYx)2/3Ca1/3MnO3(0.0≤x≤0.3)体系的磁特性,给出了磁转变温度Tc与La位平均离子尺寸之间的关联.结果表明,随Y掺杂浓度的增加,金属-绝缘转变(M-I)温度TMI向低温区移动,对应的峰值电阻率ρp升高,对x=0.3样品而言,较未替代样品(x=0.0)增幅达8个数量级之多,指出由于Y的掺入而致使La位平均离子半径()减少以及局域晶格结构畸变引起的.磁性测量表明了在x>0.1的高浓度区域,随着x的增加,反铁磁性相互作用逐渐增强,导致x=0.2和x=0.3的样品在35K左右出现了自旋玻璃态.     

(Bi, La)4Ti3O12-Sr(Bi, La)4Ti4O15共生结构铁电材料性能研究

采用固相烧结工艺,制备了不同La掺杂量(x=0.00,0.25,0.50,0.75,1.00,1.25和1.50)的(Bi, La)4Ti3O12-Sr(Bi, La)4Ti4O15 (SrBi8-xLaxTi7O27)共生结构铁电陶瓷样品.用x射线衍射对其进行微结构分析,并测量铁电、介电性能.结果发现,La掺杂未改变Bi4Ti3O12-SrBi4Ti4O15共生结构铁电材料的晶体结构.随掺杂量的增加,样品的矫顽场(Ec)略有增加,剩余极化(2Pr)先增大,后减小.在x＝0.50时,2Pr达到极大值,为25.6 μC*cm-2,与Bi4Ti3O12-SrBi4Ti4O15相比,2Pr增加了近60%,而Ec仅增加约10%.随La掺杂量的增加,样品的居里温度TC逐渐降低,x＝0.50时,TC=556 ℃.在x=1.50时,样品出现弛豫铁电体的典型特征.     

A位的Gd掺杂对La0.7Sr0.3MnO3体系磁电性质的影响

通过实验研究了La0.7-xGdxSr0.3MnO3(x=0.00,0.10,0.15,0.20,0.30,0.40,0.50,0.60,0.70)体系的M-T曲线、M-H曲线、红外光谱、拉曼光谱、ρ-T曲线和MR-T曲线.实验结果表明:随着Gd掺杂的增加,体系从长程铁磁有序向自旋团簇玻璃态和反铁磁状态转变,高掺杂时的输运性质在其磁背景下发生异常.Gd掺杂引起的磁结构变化和额外的磁性耦合将导致庞磁电阻效应.     

Y1-xRxBa2Cu3O7-δ体系R=Eu、Gd)的正电子寿命和超导性研究

本文报道了对Y1-xRxBa2Cu3O7-δ(R=Eu、Gd)两个系列样品的超导电性研究结果.首先,发现随着Eu、Gd掺杂量x的增加,Y1-x〗EuxBa2Cu3O7-δ和Y1-xGdxBa2Cu3O7-δ的晶胞体积均随之增大,但所有样品均保持与Y-123样品相同的单相正交结构;正电子平均寿命实验结果表明Cu-O链处局域电子密度ne随Eu、Gd掺杂浓度x的增加而减小,说明Eu、Gd对Y位的替代引起晶胞结构参量的变化不仅改变了Y位的电子密度,同时也影响了Cu-O链周围的电子密度分布;超导转变温度T\-c随Eu、Gd掺杂浓度x增加而略有增加,反映了Eu、Gd掺杂虽然改变了体系的局域电子结构,但没有破坏超导所需的Cu-O链与CuO2面之间的耦合;Y位掺杂体系的超导电性与掺杂离子的磁性无关,而与掺杂离子的半径有关.     

Mo掺杂La_(0.7)Ca_(0.2)Ba_(0.1)Mn_(1-x)Mo_xO_3体系的磁电性质

本文采用固相反应法制备了高价态离子Mo掺杂的La0.7Ca0.2Ba0.1Mn1-xMoxO3(x=0,0.01,…,0.06)多晶样品,研究了Mo掺杂对样品的结构、磁性和磁电阻的影响.X射线衍射谱证实所有样品均为具有正交对称性的钙钛矿结构.零场冷却(ZFC)和加场冷却(FCH=0.01T)下其磁化～温度(M～T)曲线的测量表明样品随温度降低发生了从顺磁(PM)到铁磁(FM)的相变,T相似文献   

Gd掺杂对La0.67Sr0.33CoO3、 La0.67Sr0.33MnO3体系磁行为的影响

通过实验研究了La0.67-xGdxSr0.33CoO3、La0.67-xGdxSr0.33MnO3(x=0.00、0.05、0.10、0.20、0.30、0.40、0.50、0.60、0.67)体系的磁化强度与温度的关系(M～T)曲线、磁化强度与磁场强度的关系(M～H)曲线.实验结果表明,随Gd掺杂浓度增高,La0.67-xGdxSr0.33CoO3体系的磁结构表现为团簇玻璃态,x>0.10样品的M～T曲线出现了低温区M值急剧上升的奇特现象;La0.67-xGdxSr0.33MnO3体系的磁结构从长程铁磁有序向团簇玻璃态、反铁磁状态转变,x≥0.50样品的M～T曲线在低温区急剧下降.两种体系呈现的不同现象,来源于Gd与Co、Mn不同的耦合作用和Co的自旋态的转变.     

钒掺杂La1.85Sr0.15Cu1-xVxO4＋δ超导体系的结构研究

本文讨论了钒掺杂La1.85Sr0.15Cu1-xVxO4 δ体系的结构.与以往二三价元素掺杂不同,V掺杂的最高掺杂浓度较大,为0.15.精修结果表明,样品中V为 4价,并且全部替代了Cu.晶胞参数a,b随掺杂量x的增加而增加,c随x的增加减小.x=0.10时发生四方-正交相变.随掺杂含量的增加样品结构的变化在红外吸收谱中也有对应.随V含量的增加,500cm-1处的吸收峰的强度和位置都没有变化,这表明V替代在了Cu位.对于350cm-1处的吸收峰,x=0.5时在其附近左侧327cm-1处出现一个吸收峰,当x=0.10时在其右侧400cm-1处又出现一个吸收峰.400cm-1处吸收峰的出现是和四方-正交相变(x=0.10时发生四方-正交相变)相对应的.     

GGA+U方法研究不同浓度镧(La)与氮(N)掺杂纤锌矿ZnO的光学性质

本文运用基于密度泛函理论的GGA+U方法,计算了纯ZnO体系,La、N单掺ZnO体系及Zn_(1-x)La_xO_(0.875)N_(0.125)(x=0.125,0.25,0.375)三个共掺体系的电子结构和光学性质.计算结果表明,共掺体系中随着La浓度的增加,掺杂后体系的禁带宽度变小,电子跃迁所需能量减小,晶格畸变程度增大,有利于阻碍光生空穴和电子对的复合,吸收光谱吸收带边红移程度越来明显,覆盖了整个可见光区域.这些特征非常有利地说明共掺体系随La浓度的增加,其光催化功能和电学性能也在提升.     

Effect of electron doping on the magnetic correlations in the bilayered brownmillerite compound Ca(2.5-x)La(x)Sr(0.5)GaMn2O8: a neutron diffraction study

The effect of electron doping on the magnetic properties of the brownmillerite type bilayered compounds has been investigated by neutron powder diffraction in La substituted Ca(2.5-x)La(x)Sr(0.5)GaMn(2)O(8) compounds (x = 0.05 and 0.1), in comparison with the undoped compound (x = 0). In all compounds, a long-range three-dimensional collinear antiferromagnetic (AFM) structure is found below the Néel temperature T(N) of the respective compound, whereas, well above T(N), three-dimensional short-range magnetic ordering is observed. In the intermediate temperature range just above T(N), a strong effect of electron doping (La substitution) on the magnetic correlations has been observed. Here, a short-range AFM correlation with a possible dimensionality of three has been found for substituted compounds (x = 0.05 and 0.1) as compared to the reported two-dimensional long-range AFM ordering in the parent compound. With increasing electron doping, a decrease in T(N) is also observed. The short-range magnetic correlations set in over a large temperature range above T(N). A magnetic phase diagram in the x-T plane is proposed from these results.     

Epitaxial growth and band alignment of (Gd(x)La(1-x))(2)O(3) films on n-GaAs (001)

Herein we demonstrate the epitaxial stabilization of single-crystalline (Gd(x)La(1-x))(2)O(3) films on n-GaAs (001) with a controlled lattice match. (Gd(x)La(1-x))(2)O(3) films have an in-plane epitaxial relationship with a twofold rotation on GaAs (001). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (Gd(x)La(1-x))(2)O(3) film is approximately approximately 5.8eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (Gd(x)La(1-x))(2)O(3) film (x=0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.     

Magnetic and transport properties of Ln1–xSrxCoO3 perovskite materials (Ln= La, Nd, Gd) prepared by low-temperature synthetic routes

We have used three soft-chemistry methods for the efficient preparation of Ln_1−xSr_xCoO₃ samples, adapting the combustion and the liquid-mix methods for the synthesis of the Ln = La and Gd compounds, respectively, and the preparation of Nd_1−xSr_xCoO₃ by the nitrate decomposition method. We report the magnetic and electrical properties of these relatively small particle-size materials, specially in the case of the Ln = La and Ln = Nd series (d≈0.2 μm and 0.5 μm, respectively), and we compare them to those displayed by the corresponding compounds prepared at higher temperatures. The compounds here obtained are ferromagnetic for x≥0.15 when Ln = La and for x≥0.20 when Ln = Nd and Gd. Their resistivity decreases as the doping degree increases. And, very interestingly, for compositions 0.20<x≤0.45, when Ln = La, and for x=0.40, when Ln = Nd, they show M-I transitions as the temperature rises. These are very sensitive to the application of electrical current and its polarity and the presence of magnetic fields, displaying peculiar behaviors. Paper presented at the 5th Euroconference on Solid State Ionics, Benalmádena, Spain, Sept. 13–20, 1998.     

GREAT MAGNETIC ENTROPY CHANGE IN La(Fe, M)13 (M=Si, Al) WITH Co DOPING

Very large magnetic entropy change Δ S_M, which originates from a fully reversible second-order transition at Curie temperature T_C, has been discovered in compounds La(Fe, Si)₁₃, La(Fe, Al)₁₃ and those with Co doping. The maximum change ΔS_M\approx19 J·kg^-1·K^-1, achieved in LaFe_11.4Si_1.6 at 209K upon a 5T magnetic field change, exceeds that of Gd by more than a factor of 2. The T_C of the Co-doped compounds shifts to higher temperatures. ΔS_M still has a considerable large magnitude near room temperature. The phenomena of very large ΔS_M, convenience of adjustment of T_C, and also thesuperiority of low cost, strongly suggest that the compounds La(Fe, M)₁₃ (M=Si, Al) with Co doping are suitable candidates for magnetic refrigerants at high temperatures.     

La0.3Ca0.7Mn1-xWxO3体系电荷有序的建立与融化

用标准的固相反应法制备了La0.3Ca0.7Mn1-xWxO3(0.00≤X≤0.15)多晶样品.通过对样品磁化强度-温度(M-T)曲线、磁化强度-磁场强度(MH)曲线及ESR谱的测量,研究了Mn位W掺杂对La0.3Ca0.7Mn1-xWxO3体系的磁相变的影响.结果表明,随着W掺杂量的增加,体系磁相变发生了复杂的变化过程.当掺杂量为0.00≤X≤0.08时,体系存在电荷有序(CO)相,反铁磁(AFM)/C0态共存于相变温度以下,电荷有序温度(Tco)随着W掺杂量的增加而增加.x≥0.12时,体系电荷有序态逐渐减弱并融化,在极低温度下存在顺磁-铁磁(PM-FM)相变.     

Theoretical Studies on the Ground State and Excited State of 2,70-(Ethylene)-bis-8-hydroxyquinoline

采用DFT/B3LYP和HF方法优化了2,70-(乙烯基)-二-8-羟基喹啉的构型,计算了该化合物的电子亲合势、电离势,利用ZINDO半经验方法和含时密度泛函方法(TD-DFT)计算了吸收光谱的数值,用CIS方法优化了第一激发单态并在此基础上计算了发射光谱,当考虑溶剂化效应后,实验光谱与计算光谱符合得相当好. 通过分析能量与光谱数值,该化合物的电子传输能力强于8-羟基喹啉,吸收光谱和发射光谱发生红移. 通过分子内重组能的计算,三-2,70-(乙烯基)-二-8-羟基喹啉铝（Albiq3）的电子传输性能比三-8-羟基喹啉铝的差,比较两配合物的发射光谱,Albiq3的最大发射波长红移.     

Tricritical phenomena at the gamma-->alpha transition in Ce0.9-xLaxTh0.1 alloys

The gamma-->alpha isostructural transition in the Ce0.9-xLaxTh0.1 system is measured as a function of La alloying using specific heat, magnetic susceptibility, resistivity, thermal expansivity or striction measurements. A line of discontinuous transitions, as indicated by the change in volume, decreases exponentially from 118 K to close to 0 K with increasing La doping, and the transition changes from being first-order to continuous at a critical concentration, x(c) approximately 0.14. At the tricritical point, the coefficient of the linear T term in the specific heat gamma and the magnetic susceptibility increase rapidly near x(c) and approach large values at x=0.35 signifying that a heavy Fermi-liquid state evolves at large doping. The Wilson ratio reaches a value above 2 for a narrow range of concentrations near x(c), where the specific heat and susceptibility vary most rapidly with the doping concentration.     

From antiferromagnetic order to static magnetic stripes: the phase diagram of (La,Eu)2-xSrxCuO4

The magnetic order of (La,Eu)2-xSrxCuO4 ( x相似文献   

Metal-to-insulator crossover in the low-temperature normal state of Bi(2)Sr(2-x)La(x)CuO(6+delta)

We measure the normal-state in-plane resistivity of Bi(2)Sr(2-x)La(x)CuO(6+delta) single crystals at low temperatures by suppressing superconductivity with 60 T pulsed magnetic fields. With decreasing hole doping, we observe a crossover from a metallic to an insulating behavior in the low-temperature normal state. This crossover is estimated to occur near 1/8 doping, well inside the underdoped regime, and not at optimum doping as reported for other cuprates. The insulating regime is marked by a logarithmic temperature dependence of the resistivity over two decades of temperature, suggesting that a peculiar charge localization is common to the cuprates.