1.55 μm偏振无关半导体光放大器腔面减反膜的研制

设计并制作了1.55 μm偏振无关半导体光放大器腔面TiO2/SiO2多层减反膜, 工艺过程中设计并使用了反射率实时监控装置, 得到了低于5×10－4的腔面剩余反射率. 器件测试结果表明, 管芯在250 mA电流下仍处于未激射状态, 表明减反膜有效抑制了芯片的激射. 半导体光放大器的自发辐射（ASE）谱波动在0.4 dB以下, 3 dB带宽大于52 nm, 半导体光放大器小信号增益近27 dB, 在1520~1580 nm波长范围内偏振灵敏度小于0.5 dB.     

中红外光参变振荡器在高反射率测量中的应用

根据光腔衰荡光谱技术(CRDS)原理,使用中红外光参变振荡器(OPO)为光源建立了直腔与折叠腔相结合的中红外波段3.6 μm 反射率测量实验装置,用于研究中红外波段的高反射膜反射率,测试精度为10-4。使用直型衰荡光腔测试了三对不同薄膜材料设计镀制的高反射腔镜的反射率,并选择了一对腔镜用于实验装置中。采用该装置精确测试了不同薄膜材料镀制的高反射膜的反射率,包括YbF3/ZnS,YbF3 /ZnSe多层膜,以及由银加保护膜镀制的反射镜。研究表明,中红外波段介质膜的反射率可达到R>0.9990,其中由YbF3/ZnSe镀制在硅基底上的多层介质膜3.6 μm反射率可达到99.96％。     

The Fabrication and Characterization of Polarization Insensitive Semiconductor Optical Amplifier

An angled facet strained bulk InGaAs SOA has been designed and fabricated. A device with double-layer antireflection coatings had <2dB polarization sensitivity and <0.5dB gain ripple.     

端面反射率的波长特性对外腔半导体激光器调谐范围的影响

端面镀增透膜的激光二极管构成的光栅外腔激光器（ECLD）中,考虑到镀膜端面剩余反射率对波长的依赖关系以后,利用等效腔法导出了该激光器阈值载流子密度随波长变化的解析表达式,以此为出发点,讨论了增透膜反射率极小位置对调谐范围的影响。结果表明,除了增大剩余反射率工和降低剩余反射率能够提高调谐范围这一明显结论这外,在镀膜工艺确定的情况下,即假定剩余反射率带宽和剩余反射率极小值变化不大时,通过控制剩余反射率极小值所对应的波长相对于镀膜前增益峰的偏移量,可进一步拓宽波长调谐范围。     

外腔半导体激光器中激光二极管端面反射率的谱特性分析

考虑到端面反射率与波长有关 ,且带宽有限的实验事实 ,以及增益谱随载流子密度变化的因素 ,着重分析了激光二极管 (L D)镀膜端面反射率带宽、极小波长位置参量对光栅外腔激光器 (ECL D)调谐范围的影响。分析表明 ,除了 L D镀膜端面剩余反射率值、外腔反馈效率等因素之外 ,增大反射率带宽、精确控制极小波长位置是进一步挖掘 ECL D调谐范围的有效措施。增大反射率带宽 ,可更有效地提高参考载流子密度 ,延伸长波长端调谐区域 ,抑制 F- P腔影响。在确定的条件下 ,优化后的极小波长位置对应于调谐范围的极大值。理论分析结果较好地解释了实验现象     

808 nm大功率半导体激光器腔面膜的制备

采用等离子体辅助电子束蒸发方法在808 nm大功率量子阱半导体激光器腔面设计镀制了HfO₂/SiO₂系前后腔面膜. 用直接测量法测量并比较了各种常用膜系的相对损伤阈值. 增透膜的反射率为12.2％,高反膜的反射率为97.9％. 对于100 μm条宽、1000 μm腔长的条形结构通过器件测量结果是出光功率提高79％、外微分量子效率提高80％、功率效率由没镀膜之前的22.2％提高到镀膜之后的39.8％.     

CVD金刚石中的氮对等离子体刻蚀的影响

采用非对称磁镜场电子回旋共振等离子体分别对沉积过程中掺氮和未掺氮的化学气相沉积金刚石膜进行了刻蚀研究, 结果表明: 掺氮制备的金刚石膜的刻蚀主要集中在晶棱处, 经过4h刻蚀后其表面粗糙度由刻蚀前的4.761 μm下降至3.701 μm, 刻蚀对金刚石膜的表面粗糙度的影响较小; 而未掺氮制备的金刚石膜的刻蚀表现为晶面的均匀刻蚀, 晶粒坍塌,刻蚀4h后其表面粗糙度由刻蚀前的3.061 μm下降至1.083 μm. 刻蚀导致表面粗糙度显著降低. 上述差别的主要原因在于金刚石膜沉积过程中掺氮导致氮缺陷在金刚石晶棱处富集, 晶棱处电子发射加强, 引导离子向晶棱运动并产生刻蚀, 从而加剧晶棱的刻蚀. 而未掺氮金刚石膜,其缺陷相对较少且分布较均匀 ,刻蚀时整体呈现为 (111) 晶面被均匀刻蚀继而晶粒坍塌的现象. 关键词： 掺氮 金刚石膜 刻蚀 非对称磁镜场     

High power 1.5 μm integrated superluminescent light source with tilted ridge waveguide

In order to further suppress the F–P lasing and increase the superluminescent power, the tilted ridge waveguide was introduced to the integrated superluminescent device [monolithic integration of the superluminescent diode (SLD) with semiconductor optical amplifier (SOA)[. By this means, high power 1.5 m integrated superluminescent light source has been fabricated without anti-reflection (AR) coating. The F–P oscillations between the two cleaved facets were suppressed successfully compared with the device without ridge waveguide. More than 200 mW peak pulsed power was obtained under quasi-CW condition (0.1 ms pulse width, 10% duty cycle) by co-operation of the two integrated sections. The spectral FWHM is 25 nm.     

周期栅格结构表面的零反射现象

为研究周期微栅格对材料法向反射特性的影响规律,利用时域有限差分(FDTD)方法计算周期在6~14μm之间的一维硅栅格结构的光谱法向反射率,通过选择合适的栅格轮廓和参数,在不同波长位置实现零反射现象.在此基础上分析三角形栅格的深度H和刻蚀宽度L对其光谱法向反射率的影响,发现在3.23μm和8.7μm附近实现零反射现象的最佳栅格参数.     

大模场双包层光纤光栅的光谱特性

在分析大模场双包层光纤的模式特性和测试光路中光功率分配的基础上,根据耦合波理论和传输矩阵法,对不同情况下大模场双包层光纤光栅的透射谱和反射谱进行数值分析,结果表明光谱形状取决于模式间的功率分配,通过基模的透射谱可以测量双包层光纤光栅的真实反射率。采用相位掩模法制作了基模反射率不低于99.7%的20/400μm大模场双包层光纤光栅,测试了不同情况下的反射谱和透射谱,实验结果和理论分析的结论一致。     

Etched facet and semiconductor/air DBR facet of a AlGaInP laser diode prepared by focused ion beam milling

The study of focused ion beam (FIB) milling for making etched facet and semiconductor/air distributed Bragg reflector (DBR) facets of AlGaInP-based red laser diodes (LD) is presented in this letter. For the Ga ion beam current of 100 pA at fixed accelerated voltage 30 kV, FIB milling rate of GaAs was found to be 0.46 μm³/nC. As a trade-off between high reflectivity and enough technical tolerance, the combination of third Bragg orders of semiconductor wall and air gap was chosen. The deeply etched mirror and distributed Bragg reflector facet consisting of pairs of semiconductor wall/air gap on laser diodes (LD) cavity facets with vertical sidewall on AlGaInP LDs were fabricated by focused Ga ion beam milling. Comparison of the AlGaInP LD with the mirrors between cleaved and FIB made facet was given and discussed.     

Theoretical and Experimental Study on all-optical Wavelength Converters Based on the Single-port-coupled SOA

We analyze the all-optical wavelength converter (AOWC)-based on cross-gain modulation (XGM) in a single-port-coupled (SPC) semiconductor optical amplifier (SOA). A comprehensive dynamic model is developed by considering longitudinal variations of the carrier density, the residual rear-facet reflectivity of the SOA and the wide-band spontaneous noise emission. The numerical simulations for the novel wavelength conversion at 10 Gbit/s are presented based on the model. The extinction ratio (ER), conversion efficiency and pattern effect of the SPC-SOA-based wavelength converters are investigated, respectively. Compared with the traditional scheme of the double-portcoupled (DPC) SOA, the SPC-SOA scheme has better performance. We have obtained that the ER is higher than 10 dB with the pump wavelength turned over 15nm from experiments. The experimental results are in agreement with the simulation results.     

不同材料的受激布里渊散射特性

 采用波长为1.064, 0.532 μm的聚焦高斯光束作为泵浦光,数值求解受激布里渊散射（Stimulated Brillouin Scattering, SBS）放大器型耦合波方程组,比较K9玻璃、熔石英、BK7玻璃、CaF₂的SBS特征参数。研究发现：对于相同的激光参数,不同的介质具有不同的SBS特征,声子寿命长则破坏阈值低,破坏效果明显。SBS过程对CaF₂的破坏效果较明显,导致了介质前表面的破坏,在一定的激光参数和聚焦参数下,焦点附近优先于前表面破坏。SBS过程可以得到脉宽压缩比大于10、强度比泵浦光峰值高5倍以上的Stokes散射光脉冲。相同激光参数下,不同材料压缩效果及散射光相位共轭保真度不同,CaF₂在低泵浦能量时脉宽压缩特性较好;高泵浦能量时,相位共轭保真度较好。固体透明光学材料中可获得大于95%的能量提取效率。     

Hybrid output mirror for optically pumped far infrared lasers

A hybrid metallic mesh multilayer dielectric coating mirror has been developed for use as an output mirror for optically pumped far infrared lasers. The metallic mesh provides a high reflectance in the far infrared while the multilayer dielectric coating is chosen to provide a maximum reflectivity at the pump wavelength (10 μm). This hybrid mirror has increased the output power of a CH₃F waveguide laser at 496 μm by a factor of 350 over that obtained with a hole coupling mirror. In addition, this mirror results in a far infrared output beam which has a minimum angular divergence limited only by the particular oscillating transverse waveguide mode (the EH₁₁ mode for this experiment).     

Influence of excitation wavelength on the reflectivity of photogenerated plasmas in germanium

High-density carriers were produced in germanium using the fundamental (1.06 μm) and second harmonic (0.53 μm) output of a Q-switched glass:Nd³⁺ laser. Differences in the plasma reflectivity at 10.6 μm are attributed to different amounts of lattice heating. In particular, the more substantial damping of the plasma resonance associated with the 0.53 μm excitation is attributed to a higher electron-phonon collision frequency. The results are discussed with respect to diagnostics of photogenerated semiconductor plasmas and the effeciency of semiconductor switches.     

Picosecond optical switching of a 1.5 μm active birefringent optical fiber loop filter using 1.3 μm control optical pulses and a 1.3 μm semiconductor optical amplifier

Less than 100ps, polarization-independent switching operation of an active birefringent optical fiber loop filter using 1.3 μm control optical pulses as well as a 1.3 μm semiconductor optical amplifier (SOA) has been demonstrated. In the proposed SOA-based active birefringent filter operating at 1.55 μm wavelength, 1.3 μm SOA is employed to control the polarization-mode dispersion in the loop part. By injecting 1.3 μm ps gain-switched optical control pulses into the SOA, 1.5 μm input signals can be switched from the transmission port to the reflection port with less than 100 ps rise time.     

一维光子晶体带隙结构研究

在考虑介质色散的基础上,研究了介质层厚度对光子晶体带隙结构的影响.利用传输矩阵法,计算了以LiF和Si两种材料组成的一维光子晶体带隙结构.结果表明,介质层厚度的增加会引起禁带的红移,厚度减小会引起蓝移.分析了含空气缺陷层、金属缺陷层的光子晶体结构,发现空气缺陷层对带隙结构的高反射区域变化不大,而在低反射区域,反射系数为零的波带之间出现了两边反射系数增加,中间反射系数减小的情况.在金属缺陷层的带隙结构中,金属对整个波长范围光的吸收作用不同,金属对低反射区1.6 μm、1.85 μm处透射率较大的透射光吸收作用明显,而在1.28~1.38 μm处透射率波长区间,几乎无吸收.     

Polarization insensitive gain medium with hybrid strained quantum well

A polarization insensitive gain medium for optical amplifiers has been fabricated. The active layer is a structure with alternate tensile and compressive strain quantum wells. The waveguide is made into a taper with angled facets. In the experiment we found that the structure can suppress the lasing and decrease the polarization sensitivity. The gain imbalance between transverse electric and transverse magnetic gains is small, and 0.1 dB is obtained at a driving current of 100 mA. The full-width at half-maximum of amplified spontaneous emission is 40 nm within large current.     

Low-threshold mid-IR MgO:PPLN optical parametric generation with high reflectivity mirror for signal wavelength

A low-threshold middle-infrared(mid-IR) MgO:PPLN optical parametric generation(OPG)pumped by a laser diode(LDl end-pumped Z-type Nd:YLF laser at 1047 nm is realized with high reflectivity(HR) mirror for signal.At repetition rate of 10 kHz,the OPG threshold of 50μJ has been achieved with HR mirror for signal.Compared with the threshold without mirror,the threshold decreases by 17%.Using HR mirror for pump at output side of crystal,the threshold of 40μJ is achieved.The 2.7-4.1μm continuous tunable output is produced with seven grating periods from 28.5 to 31.5μm and temperatures from 30 to 200℃.When the incident average pump power is 3 W.the OPG idler output power is 0.46 W at 3.26 μm,which corresponds to optical-to-optical conversion efficiency up to 15.3%.     

Gain-clamped semiconductor optical amplifiers based on compensating light: Theoretical model and performance analysis

It is well known that the gain-clamped semiconductor optical amplifier (GC-SOA) based on lasing effect is subject to transmission rate restriction because of relaxation oscillation. The GC-SOA based on compensating effect between signal light and amplified spontaneous emission by combined SOA and fiber Bragg grating (FBG) can be used to overcome this problem. In this paper, the theoretical model on GC-SOA based on compensating light has been constructed. The numerical simulations demonstrate that good gain and noise figure characteristics can be realized by selecting reasonably the FBG insertion position, the peak reflectivity of FBG and the biasing current of GC-SOA.