Al-N共掺杂ZnO电子结构和光学性质

基于密度泛函理论的第一性原理,分析了Al-N共掺杂ZnO的电子结构和光学性质。计算了Al-N复合体共掺ZnO的结合能,发现Al-N复合体可以在ZnO中稳定存在,因此Al-N共掺可以提高N在ZnO的固溶度。研究表明:N掺杂ZnO体系,由于N-2p和Zn-3d态电子轨道杂化作用,在费米能级附近引入深受主能级,价带顶和导带底发生位移,导致禁带宽带变窄。而Al-N共掺杂体系,适当控制Al和N的比例,克服了N单掺杂时受主间的相互排斥,降低了受主能级,对改善ZnO的p型掺杂有重要意义。在Al-N共掺ZnO中,Al的引入,导致共掺体系的禁带宽度减小,吸收带边红移,实验现象证实了这一结果。     

In-N共掺杂ZnO第一性原理计算

采用基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法计算了纤锌矿ZnO,N掺杂和In-N共掺杂ZnO晶体的电子结构,分析了N掺杂和In-N共掺杂ZnO晶体的能带结构、电子态密度、差分电荷分布以及H原子对In-N共掺杂ZnO的影响.计算结果表明：N掺杂ZnO在能隙中引入了深受主能级,载流子(空穴)局域于价带顶附近.而加入激活施主In的In-N共掺杂ZnO,受主能级向低能方向移动,形成了浅受主能级.同时,受主能级带变宽、非局域化特征明显、提高了掺杂浓度和系统的稳定性.文章的结论与实验结果相符,从而为实 关键词： 密度泛函理论(DFT) 第一性原理 N掺杂ZnO In-N共掺杂ZnO     

Al、N共掺杂实现p-型ZnS的第一性原理研究

 采用基于密度泛函理论的第一性原理平面波超软赝势方法,计算了闪锌矿ZnS、N掺杂以及Al、N共掺杂ZnS晶体的电子结构,分析了N掺杂以及Al和N共掺杂ZnS晶体的能带结构、电子态密度以及Mulliken电荷分布。计算结果表明：N掺杂ZnS在能带中引入了深受主能级,N原子的2p态在价带顶提供了空穴载流子,载流子局域于价带顶附近;Al和N共掺使得受主能级变宽,非局域化特征明显,提高了掺杂浓度和系统的稳定性,更加有利于获得p-型ZnS。     

Aluminum and nitrogen impurities in Wurtzite ZnO: first-principles studies

First-principles calculations have been performed to investigate the doping behaviors of Al and N dopant impurities in ZnO. According to the results, in the Al mono-doping case, the impurity states are quite delocalized, the corresponding effective masses are small, and the formation energy is as low as −9.71 eV. In the N mono-doping case, the impurity states are localized, the effective masses are large, and the formation energy is high (4.55 eV in the most favorable extreme O-rich conditions). In the Al-N codoping case, the corresponding effective masses are marked decreased compared to the N mono-doping situations, and the formation energy of the N-Al-N system is as low as −2.54 eV in the O-rich condition. The above results can explain the electrical behaviors of the doped or codoped ZnO systems observed in experiments.     

Li-N, Li-2N共掺p型ZnO的第一性原理研究

利用密度泛函理论, 计算了本征ZnO, Li-N共掺杂ZnO及Li-2N共掺杂ZnO的电子结构. 计算结果表明, Li-N及Li-2N共掺杂ZnO体系的Fermi能级均不同程度地进入价带顶, 并在Fermi能级附近形成浅的受主能级, 这说明, Li, N原子共掺杂可获得稳定的p型ZnO;与Li-N掺杂ZnO体系相比, Li-2N掺杂ZnO体系进一步提高了体系的载流子浓度, 更有利于获得p型ZnO.     

N,Co共掺杂锐钛矿相YiO2光催化剂的第一性原理研究

采用第一性原理平面波超软赝势方法研究了N,Co共掺杂锐钛矿相TiO2的微观结构和光学性质.结果表明:N,Co共掺杂后TiO2晶格中产生的偶极矩使光生电子-空穴对更有效地分离;在TiO2导带和价带之间形成了新的杂质能级,一方面使吸收带边红移到可见光区,光吸收性能明显增强,另一方面有利于光生电子-空穴对的分离,提高TiO2的光量子效率;与纯TiO2相比,N,Co共掺杂锐钛矿相TiO2带边的氧化还原势只有微小的变化,共掺杂后TiO2的强氧化还原能力得以保持.     

First-principle study of optical properties of (N,Ga) codoped ZnO

To analyze the electronic structure and optical properties of (N, Ga) codoped ZnO, the parameters such as band structure, density of states, dielectric constant, absorption and reflection spectra of pure ZnO, N–Ga and 2N–Ga codoped ZnO were calculated by using first-principle method based on DFT (Density Functional Theory). The results demonstrated that the band gap of (N, Ga) codoped ZnO narrows, and 2N–Ga codoping can obtain a high-quality and more stable p-type ZnO. Compared with pure ZnO, the real and imaginary part of dielectric function of (N, Ga) codoped ZnO move toward a lower energy side; in ultraviolet region, the absorption spectrum reduces greatly, and the blue shift of reflectivity spectrum is observed; while in infrared region, the reflectivity spectrum of 2N–Ga codoped ZnO is twice that of pure ZnO or N–Ga codoped ZnO. The results provided certain theoretical reference for the study of ZnO-based transparent conductive thin films.     

Mn,N共掺杂对锐钛矿相TiO2微观结构和性能的影响

采用第一性原理平面波超软赝势方法,系统研究了Mn,N共掺杂对锐钛矿相TiO₂的晶体结构、缺陷形成能、电子结构、光学性质以及氧化还原能力的影响.研究表明:Mn,N共掺杂锐钛矿相TiO₂后,TiO₂晶格发生了畸变,导致晶体八面体偶极矩增加,有利于光生电子-空穴对的有效分离;在TiO₂带隙中出现了杂质能级,使锐钛矿相TiO₂的光学吸收带边红移,可见光区的吸收系数明显增大,有利于光催化效率的提高;在不考虑 关键词： 2')" href="#">锐钛矿相TiO₂ 第一性原理 Mn和N共掺杂 光催化性能     

金属和非金属共掺杂锐钛矿相TiO2的第一性原理计算

本文运用第一性原理的计算方法, 以C/TM和N/TM共掺杂(碳与过渡金属共掺杂和氮与过渡金属共掺杂)TiO₂为例, 分别计算了它们共掺杂TiO₂的束缚能、能带结构和态密度等, 通过对双掺杂结构的束缚能计算, 发现非金属和金属杂质有团聚成键的趋势, 其正的束缚能说明了掺杂原子与周围的原子成键, 因成键作用减少的体系能量高于因几何畸变带来的应力能. 在对N/V和C/Cr共掺杂能带结构和分子成键的详细分析中, 发现非金属和金属共掺杂TiO₂, 要使掺杂后TiO₂的光吸收边红移较大, 光催化性能较好, 就要符合金属和非金属共掺杂协同机制, 即 掺杂后在导带底下方和价带顶上方分别出现由金属3d和非金属2p态提供的杂质能级.     

Structural, optical and electrical properties of Al-N codoped ZnO films by RF-assisted MOCVD method

N-doped ZnO films were produced using N₂ as N source by metal-organic chemical vapor deposition (MOCVD) system which has been improved with radio-frequency (RF)-assisted equipments. The data of secondary ion mass spectroscopy (SIMS) indicate that the concentration of N in N-doped ZnO films is around 5 × 10²⁰ cm⁻³, implying that sufficient incorporation of N into ZnO can be obtained by RF-assisted equipment. On this basis, the structural, optical and electrical properties of Al-N codoped ZnO films were studied. Then, the effect of RF power on crystal quality, surface morphologies, optical properties was analyzed using X-ray diffraction, atomic force microscopy and photo-luminescence methods. The results illustrate that the RF plasma is the key factor for the improvement of crystal quality. Then the observation of A⁰X recombination associated with N_O acceptor in low-temperature PL spectrum proved that some N atoms have occupied the positions of O atoms in ZnO films. Hall measurements shown that p-type ZnO film deposited on quartz glasses was obtained when RF power was 150 W for the Al-N codoped ZnO films, while the resistivity of N-doped ZnO films was rather high. Compared with the Al-doped ZnO film, the obviously increased resistivity of codoped films indicates that the formation of N_O acceptors compensate some donors in ZnO films effectively.     

Donor-acceptor complexes in ZnO

One of the main obstacles to the technical application of the wide-gap semiconductor ZnO represents the difficulty to achieve reliable and sufficient p-type doping. The theoretically proposed concepts of cluster-doping or codoping should lead to an enhanced and stable p-type conductivity of ZnO. We report on PAC results obtained by codoping experiments of ZnO by ion implantation using the donor ¹¹¹In and the group-V acceptors N and P. The formation of In-N and In-P pairs has been observed. Based on these PAC results, there is no evidence for the formation of In-acceptor complexes involving more than one N or P acceptor. Finally, first reports on PAC investigations using ⁷⁷Br as donor in ZnO are presented.     

First-principles calculation on p-type conduction of (Sb,N) codoping in ZnO

Based on first-principles calculations, (Sb, N) codoped ZnO are investigated. We find that Sb_Zn–4N_O have lower formation energy and can form p-type conduction with smaller hole effective mass. In comparation to monodoping of Sb, Sb_Zn–4N_O complex can form better p-type conductivity than Sb_Zn–2V_Zn, which may be strongly compensated by Sb_Zn defect and result in a decrease of p-type conduction. So we inferred that (Sb, N) codoping in ZnO under O-poor condition should be a realizable candidate of p-type conduction.     

离子束增强沉积制备p型氧化锌薄膜及其机理研究

采用离子束增强沉积方法在Si和SiO₂/Si衬底上制备In-N共掺杂ZnO薄膜(INZO)，溅射靶是用ZnO和2 atm% In₂O₃粉体均匀混合并压制而成，在氩离子溅射ZnO靶的同时，氮、氩混合离子束垂直注入沉积的薄膜.实验结果显示INZO薄膜具有(002)的择优取向，并且为p型导电，电阻率最低为0.9Ωcm.薄膜在氮气、氧气气氛下退火，对薄膜的结构和电学特性与成膜和退火条件的关系进行了分析. 关键词： 氧化锌薄膜 p型掺杂 离子束增强沉积     

第一性原理研究Eu/N共掺杂锐钛矿TiO2光催化剂的电子和光学性质

基于密度泛函理论的第一性原理平面波赝势方法, 运用Vasp方法计算了Eu, N掺杂及Eu/N共掺杂锐钛矿TiO₂的结构, 并分析了其电子及光学性质. 通过计算发现有一些Eu的4f态电子在Eu掺杂锐钛矿TiO₂的体系的费米能级附近出现杂质能级, 并且N掺杂会使得锐钛矿TiO₂的禁带宽度减小. 对于共掺杂体系而言, Eu/N共掺杂的协同效应能导致锐钛矿TiO₂的晶格畸变及禁带宽度减小. 与此同时, 计算得到的光吸收谱表明Eu/N混合掺杂锐钛矿TiO₂展现出了明显的光谱吸收边缘红移. 这些计算结果表明Eu/N共掺杂锐钛矿TiO₂具有优良的光催化活性. 关键词： 2')" href="#">TiO₂ 共掺杂 可见光催化剂 密度泛函理论     

Mg,O共掺杂实现p型AlN的第一性原理研究

采用密度泛函理论下的第一性原理平面波超软赝势方法研究了纤锌矿本征AlN,Mg单掺杂AlN和Mg,O共掺杂AlN体系的晶格参数、能带结构、电子态密度、差分电荷密度及电子布居数.计算结果显示:在Mg,O共掺杂AlN体系中,激活施主O原子的引入能使受主能级降低,形成浅受主掺杂.同时,体系的非局域化特征显著,受主能带变宽.因而提高了Mg原子的受主掺杂浓度和系统的稳定性.Mg,O共掺杂更有利于制备p型AlN.     

Al-N共掺杂3C-SiC介电性质的第一性原理计算

采用基于密度泛函理论的第一性原理平面波超软赝势法,建立了未掺杂,Al,N单掺杂和Al-N共掺杂3C-SiC的4种超晶胞模型,并分别对模型进行了几何结构优化,对比研究了其能带结构,态密度分布和介电常数.计算结果表明:Al掺杂会增大SiC的晶格常数,而N对SiC的晶格影响很小.Al掺杂会导致费米能级进入价带,使3C-SiC成为p型半导体,且带隙宽度略为加宽.N掺杂后的SiC其导带和价带均向低能端发生移动,带隙稍有减小.本征3C-SiC几乎不具备微波介电损耗性能.但是可以通过进行Al掺杂或N掺杂加以改善,Al掺杂后的效果尤为突出.计算发现Al-N共掺杂后的3C-SiC材料在8.2—12.4 GHz范围内其微波介电损耗性能急剧下降,与实验结果相符合,并对这一结果进行了讨论分析.     

Synthesis and characterization of Al-N codoped p-type ZnO epitaxial films using high-temperature homo-buffer layer

Al-N codoped p-type ZnO thin films have been prepared by DC magnetron reactive sputtering reproducibly using a high-temperature (HT) homo-buffer layer. The influence of HT buffer layer deposition time (T_ht) on film properties was investigated by X-ray diffraction (XRD), scanning electron micro-spectra (SEM) and Hall measurement. The Al-N codoped ZnO film was improved evidently in its crystal quality by varying the value of T_ht. Results of Hall effect showed that all of the Al-N codoped ZnO thin films were p-type conduction and had resistivity mainly below 50 Ω cm. The optimum deposition time of HT buffer layer is around 3 min from the comprehensive consideration of structural, electrical, and optical properties. The obtained ZnO thin film can meet the need of application in optoelectronic devices based on ZnO.     

Yb：Er共掺杂对掺铒光纤激光器中自脉冲行为的抑制作用

为了进一步提高镱铒共掺杂光纤激光器的实用性，对镱铒掺杂光纤激光器的自脉冲现象进行了理论分析。利用掺杂光纤中铒离子对的可饱和吸收的作用而引起自脉冲运转及离子对互作用模型作为理论基础建立系统模型，通过理论计算分析了共掺杂镱后掺铒光纤的有效抽运速率，证明了镱铒共掺杂可以提高有效抽运速率。使用这种光纤，可以使抑制光纤激光器中离子对导致的自脉冲效应所需的抽运功率水平大大降低。半导体激光器输出的抽运功率足以抑制由离子对导致的自脉冲，提供稳定激光运转。在研制稳定单频或高重复频率锁模光纤激光器方面，这种可用激光二极管抽运的镱铒共掺光纤具有很大的潜力。     

Electronic Structure and Visible-Light Absorption of Transition Metals(TM=Cr,Mn, Fe,Co) and Zn-Codoped SrTiO_3: a First-Principles Study

First-principles calculations are performed on the influence of transition metal(TM=Cr, Mn, Fe, Co) as codopants on the electronic structure and visible-light absorption of Zn-doped Sr TiO_3. The calculated results show that(Zn,Mn)-codoped Sr TiO_3 requires the smallest formation energy in four codoping systems. The structures of the codoped systems display obvious lattice distortion, inducing a phase transition from cubic to rhombohedral after codoping. Some impurity Cr, Mn and Co 3d states appear below the bottom of conduction band and some Fe 3d states are located above the top of valence band, which leads to a significant narrowing of band gap after transition metal codoping. The enhancement of visible-light absorption are observed in transition metals(TM=Cr, Mn, Fe, Co) and Zn codoped Sr TiO_3 systems. The prediction calculations suggested that the(Zn,Mn)-and(Zn,Co)-codoped SrTiO_3 could be the desirable visible-light photocatalysts.     

Zn,O共掺杂实现p型AlN的第一性原理研究

基于密度泛函理论(density functional theory),采用第一性原理平面波超软赝势法,研究了纤锌矿AlN,Zn掺杂和Zn,O共掺杂AlN的晶体结构、能带、电子态密度、差分电荷分布及电荷布居数.计算结果表明:Zn,O共掺杂方法中引入激活施主O原子,能使受主能级向低能方向移动,形成了浅受主能级.同时,受主能带变宽、非局域化特征明显、从而提高了Zn原子的掺杂浓度和系统的稳定性.Zn,O共掺杂更有利于获得p型AlN. 关键词： 第一性原理 AlN 电子结构 p型共掺杂