基于增益光纤长度优化的双波长运转掺铒光纤锁模激光器

构建了可自启动的双波长运转掺铒光纤锁模激光器.通过优化增益光纤长度,利用掺铒光纤在1530nm附近的再吸收效应调节激光器的增益谱,使激光器在1530nm和1560nm附近具有相同的增益强度.实验中采用31cm掺铒光纤作为增益光纤,以透射式半导体可饱和吸收体作为锁模器件,实现了自启动双波长锁模运转.激光器锁模输出重复频率为58.01MHz,信噪比为58.2dB,最高输出功率为4.8mW.锁模输出的光谱在1532.4nm和1552.3nm处具有两个强度接近的谱峰,谱峰间距约为20nm.该激光器无需手动调节即可实现双波长运转,更便于实际使用.     

低阈值展宽脉冲锁模掺Er3+光纤环形激光器的实验研究

将正色散值较小的掺铒光纤引入传统的环形腔构成了低阈值的展宽脉冲锁模激光器.通过使用这种掺铒光纤,激光器的锁模阈值大大降低,激光器的自起振泵浦功率仅为90 mW,而且在29 mW的低泵浦功率时仍然可维持稳定的锁模状态.实验中获得了脉冲宽度为175 fs,光谱半高宽为40 nm,重复频率为33 MHz的锁模脉冲输出.激光器工作稳定,光谱干净光滑.     

可切换多波长全光纤被动锁模光纤激光器

通过在基于碳纳米管的掺铒锁模光纤激光器中加入啁啾光纤光栅,实现了皮秒和飞秒孤子的可切换多波长锁模脉冲输出。通过调节偏振控制器,分别在1530.8,1549.5,1556.5 nm三个波长处实现了多波长可切换锁模脉冲输出,其中锁模脉冲的宽度分别为833 fs, 7.43 ps和899 fs。以上三个波长的形成是由掺铒光纤的增益谱和啁啾光纤光栅的滤波效应共同决定的。本研究为实现多波长、不同规格脉冲宽度锁模激光器的设计提供了参考。     

高重复频率全光纤被动锁模掺铒光纤激光器

报道了一种高重复频率全光纤非线性偏振旋转锁模掺铒光纤激光器, 获得了重复频率217 MHz的锁模脉冲输出. 该激光器使用一个偏振相关隔离器和一个偏振控制器即可获得稳定的锁模脉冲输出, 结构简单, 系统稳定. 激光器锁模脉冲的脉冲宽度为69 fs, 3 dB光谱宽度为56 nm, 射频频谱信噪比为76 dB.     

位于第三近红外窗口的平坦光纤超连续谱产生

报道了一种基于非线性偏振旋转效应的被动锁模光纤激光器。采用980 nm分布式反馈激光器作为泵浦源,0.5 m长的高掺杂掺铒光纤作为增益介质。实现了脉冲宽度为822 fs的传统孤子锁模脉冲,输出脉冲的平均功率为2.8 mW,信噪比为55.8 dB。通过微调腔内的偏振控制器,实现了传统孤子脉冲和孤子分子脉冲间的切换,孤子分子的脉冲宽度为312 fs,信噪比为53.86 dB。孤子分子脉冲经掺铒光纤放大器放大后泵浦一段57 m长的高非线性光纤,产生了位于第三近红外窗口（1600 nm～1870 nm）的超连续谱,其20 dB谱宽为355.8 nm。     

基于多模光纤干涉效应的百飞秒展宽脉冲产生

设计了基于多模干涉效应锁模的掺铒光纤激光器,利用渐变折射率多模光纤实现了锁模脉冲输出.通过控制泵浦功率,调节腔内偏振控制器,实验获得中心波长为1528 nm的展宽脉冲,3 dB带宽为37.2 nm,脉冲宽度为973.2 fs.在腔外进行色散补偿,将展宽脉冲的脉冲宽度压缩至280.1 fs.此外,通过提高总泵浦功率至96...     

基于1064nm光纤皮秒种子源的Nd:YAG再生放大器

利用Nd:YAG再生放大器,对1064 nm掺镱锁模全光纤激光器输出的皮秒脉冲进行了功率放大.研究分析了掺镱锁模全光纤激光器输出脉冲对Nd:YAG再生放大器能量提取效率的影响,通过对掺镱锁模全光纤激光器自相位调制的控制,减少了输出光谱的振荡结构,提高了掺镱锁模全光纤激光器对Nd:YAG再生放大器的能量提取效率,实现了对锁模全光纤激光器输出的中心波长1064.4 nm,3 dB光谱宽度0.35 nm、脉宽11 ps、单脉冲能量为3.2 nJ、频率为38 MHz的锁模脉冲的再生放大,得到输出重复频率为1 kHz,最大的单脉冲能量为1.3 mJ的皮秒脉冲.     

利用光谱滤波器实现自启动的全光纤超短脉冲掺Yb3+光纤激光器

讨论了利用光谱滤波器实现自启动的被动锁模掺Yb³⁺光纤环形激光器的锁模机理,并研制出全光纤结构超短脉冲掺Yb³⁺光纤环形激光器.使用980 nm二极管激光器作为抽运源,高掺杂浓度掺Yb³⁺光纤作为增益介质.在净群速度色散为正的环形腔中加入光谱滤波器,抑制Yb³⁺离子在1030 nm强发射峰的同时,通过对啁啾脉冲的光谱滤波实现脉冲压缩.光谱滤波器与光纤非线性偏振旋转效应相结合,实现了激光器在1053 nm可自启动、十分稳定的锁模运转.激光器锁模阈值功率300 mW,平均斜率效率18.3%,最大输出功率53.07 mW,对应最大输出脉冲能量3.2 nJ.锁模光脉冲中心波长1053.6 nm,3 dB带宽10.84 nm,重复频率16.45 MHz.锁模脉冲宽度为皮秒量级,经腔外光栅对压缩至188 fs. 关键词： 3+光纤激光器')" href="#">掺Yb³⁺光纤激光器 自启动锁模 全光纤     

基于多波长类噪声脉冲的掺铒光纤激光器

报道了一种基于多波长类噪声脉冲的被动锁模掺铒光纤激光器。采用980 nm半导体激光器作为泵浦源，2.5 m长的掺铒光纤作为增益介质。锁模机制为非线性放大环形镜(NALM)。通过自相关迹证明输出脉冲为类噪声脉冲。该类噪声脉冲的光谱3 dB带宽可达17.2 nm，边模抑制比为47.7 dB，重复频率为5.434 MHz，单脉冲能量为7.9 nJ。为了实现平坦的多波长输出，在NALM结构中加入Sagnac环干涉仪，获得了最大波长数为5的平坦多波长类噪声脉冲，平坦度为1.995。     

147 fs碳纳米管倏逝场锁模全光纤掺铒光纤激光器

利用化学腐蚀法在光纤包层表面成功制备了调制深度为3.9%的单壁碳纳米管饱和吸收体.组建了环形腔结构的全光纤掺铒光纤激光器,以制备的单壁碳纳米管薄膜为锁模元件,利用倏逝场锁模实现了锁模输出.锁模脉冲的中心波长为1556 nm,3 dB光谱带宽为24 nm,脉冲宽度为147 fs,重复频率为150 MHz.在520mW抽运功率下,平均输出功率为21 mW,相应的单脉冲能量为0.14 nJ.     

Passive mode locking of a diode-end-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror

We report an end-pumped and passive mode-locking all-solid-state laser. The laser consists of a Nd:GdVO4 crystal and a linear resonator with a semiconductor saturable absorber mirror that yield mode locking. We achieved stable continuous-wave mode locking with an 8-ps pulse duration at a 154-MHz repetition rate. The average output power was 600 mW with 4 W of pump power. To our knowledge this is the first report of the use of a Nd:GdVO4 crystal for mode locking with a semiconductor saturable absorber mirror.     

半导体可饱和吸收镜作为被动锁模吸收体实现超短脉冲可见激光发展状况

介绍了当前国际上流行的一种用于固体激光器被动锁模以获得皮秒和飞秒宽度脉冲的新型半导体吸收体 半导体可饱和吸收镜的基本原理和制作方法。描述了利用半导体可饱和吸收镜和倍频晶体获得可见光超短脉冲激光方面的研究现状,指出半导体可饱和吸收镜的使用将会加速超短脉冲三基色激光器的研制进程。     

Quantum-dot-based saturable absorber for femtosecond mode-locked operation of a solid-state laser

A quantum-dot-based saturable absorber has been demonstrated to initiate the generation of femtosecond pulses from a passively mode-locked solid-state laser. Control and tuning of the pulse duration from 58 ps to 158 fs was achieved. The 158 fs transform-limited pulses at 1280 nm are the shortest pulses that were produced from the Cr:forsterite laser passively mode locked by an InAs/InGaAs quantum-dot semiconductor saturable absorber mirror.     

Theory of passive mode-locking of CW dye lasers with contacted and non-contacted absorbers

A theoretical treatment of the influence of a saturable absorber in close contact with a highly reflecting mirror on a light pulse is given. The shaping of a Gaussian pulse during a single passage through such an absorber is calculated for various absorber lengths. The influence of absorber position and length on the pulse parameters and the stability of a continuously pumped dye laser are investigated. The shortest pulses and the most favourable operation conditions of the laser are to be expected in the case of a short contacted saturable absorber.     

Experimental Study of a Pulsed Ytterbium-Doped Fibre Laser with Fast and Slow Saturable Absorbers in a Linear Cavity

We present a linear-cavity stretched-pulse fibre laser and by semiconductor saturable-absorber mirrors. A with mode locking by a nonlinear polarization rotation Q-switched mode-locking cw train and a mode-locking pulse train are obtained in the experiment. We investigate the effects of the equivalent fast saturable absorber and the slow saturable absorbers in experiment. It is found that neither the nonlinear polarization evolution effect nor a semiconductor saturable absorber mirror is enough to produce the stable cw mode-locking pulses in this experiment. A nonlinear polarization evolution effect controls the cavity loss to literally carve the pulses; semiconductor saturable absorber mirrors provide the self-restarting and maintain the stability of the modelocking operation.     

Post-growth tailoring of quantum-dot saturable absorber mirrors by chemical etching

We have designed and grown a resonant, low-finesse quantum-dot saturable absorber mirror and subsequently modified the important parameters using chemical etching. The modulation depth and saturation fluence at the design wavelength of 1064 nm were modified by etching the sample to tune the cavity resonance. The device properties were characterised using normal incidence spectroscopic reflectivity measurements, intensity dependent reflectivity measurements and modelled using a transfer matrix approach. The saturable absorber mirror was used to facilitate self-starting, passively mode locked pulses in a neodymium vanadate laser operating at 1064 nm. The etching was found to affect the duration of the pulses, leading to temporal width tuning over a range of 94 ps. The shortest pulse duration of 84 ps was achieved for the cavity resonance close to 1064 nm, with an output power of 3 W. This method is an effective technique for post-growth engineering of the properties of semiconductor saturable absorber mirrors (SESAMs) with nanometre precision.     

Gold-reflector-based semiconductor saturable absorber mirror for femtosecond mode-locked Cr4+:YAG lasers

We developed a gold reflector based semiconductor saturable absorber mirror that has a sufficiently high reflectivity and a broad bandwidth and has been used to initiate the mode locking in a Cr⁴⁺:YAG laser. The laser achieved a similar efficiency to the lasers with Bragg-reflector-based semiconductor saturable absorber mirrors, but delivered a much broader spectrum and a shorter pulse.     

Stability regime study of a nonlinear mirror mode-locked laser

A diode array pumped nonlinear mirror mode-locked (ML) laser is developed and the regime of the stable operation for such a system is found to occur for a little detuning of intra-cavity second harmonic phase-matching. The existing theory of mode-locking using a fast saturable absorber (FSA) is used to derive corresponding equivalent parameters for a fast nonlinear mirror saturable absorber. The condition for stable single pulse ML operation is evaluated in terms of small signal gain of the laser medium and small signal nonlinear loss. The analysis explains the experimental observations and differentiates the regime of operation in ML, Q-switching and cw mode-locking.     

热键合技术的Cr4+:YAG被动调Q激光器理论和实验研究

 采用数值求解被动调Q速率方程，并讨论了基于热键合技术被动调Q激光器的优化方法。通过数值仿真讨论分析了谐振腔的损耗、饱和吸收体的初始透过率、输出镜的反射率和泵浦功率等参数对激光输出的影响。结果表明：输出镜存在最佳透过率，使得输出功率最高和脉冲能量最大；减小饱和吸收体的初始透过率能有效提高脉冲能量，并压缩脉宽，但是会增加阈值泵浦功率；泵浦功率与脉冲重复率和输出功率近似成线性增加，增大泵浦功率可以压缩脉宽。并通过实验验证了理论分析的正确性。     

1.5-microm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser

We present a new monolithic GaAs-based semiconductor saturable absorber operating at 1.55 microm. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55-microm wavelength range.