基于周期极化LiTaO3晶体的高增益简并啁啾脉冲参量放大

根据准相位匹配理论计算了周期极化LiTaO3(PPLT)体中0类准相位匹配过程(e+e→e)的增益曲线.在此基础上,使用数百μJ的低抽运能量获得了～106的增益和-10.3%的转换效率,实现了中心波长位于1064nm的基于简并光学啁啾脉冲参量放大(OPCPA)技术的高增益放大,为产生超短超强激光脉冲提供了新的技术手段.实验结果与理论预期基本符合.     

光参量啁啾脉冲饱和放大的增益稳定性

 光参量啁啾脉冲放大（OPCPA）在饱和放大区存在一个增益稳定点，据此设计了一个输出稳定的三级OPCPA系统；第一、二、三级分别选用准相位匹配的周期极化钛氧磷酸钾（PPKTP）晶体、LBO晶体和KDP晶体作为增益介质。饱和放大时，增益随泵浦光强度变化时的增益输出稳定性明显改善，在泵浦光强度抖动低于6%的情况下，各级光参量放大器OPA输出的增益抖动小于1%。前级采用准相位匹配的PPKTP晶体作为增益介质，在远低于破坏阈值的30MW/cm²的泵浦功率密度下，可得到2×10⁵的饱和放大增益和20%的能量转换效率。     

掺铒硫系玻璃的制备及其微结构光纤的中红外信号放大特性研究

为进一步揭示硫系玻璃基掺Er³⁺微结构光纤对于中红外波段信号的放大特性, 采用熔融淬火法研制了Er³⁺离子掺杂的Ga₅Ge₂₀Sb₁₀S₆₅硫系玻璃, 测试了玻璃样品的吸收光谱和2.7 μm波段荧光光谱, 利用Judd-Ofelt和Futchbauer-Ladenburg理论分别计算得到了Er³⁺离子的辐射跃迁概率、辐射寿命以及2.7 μm波段受激发射截面. 在此基础上, 建立了一个980 nm抽运下该玻璃基掺Er³⁺微结构光纤2.7 μm波段中红外信号的放大模型, 理论上研究了其作为2.7 μm波段中红外信号增益介质时的光放大特性. 结果显示, 硫系玻璃基掺Er³⁺微结构光纤具有优异的高增益和宽带放大品性. 在200 mW抽运功率激励下的100 cm光纤长度上, 最大小信号增益超过了40 dB, 高于30 dB信号增益的放大带宽达到了120 nm (2696—2816 nm). 研究表明, Ga₅Ge₂₀Sb₁₀S₆₅硫系玻璃基掺Er³⁺微结构光纤是一种理想的可应用于2.7 μm波段中红外宽带放大器的增益介质.     

双向泵浦钛宝石脉冲激光的多通放大

 从基本理论出发，系统地计算分析了双向泵浦钛宝石激光放大器的增益特性，进而采用新的放大构型完成了啁啾脉冲八通放大实验，放大总增益近10⁶，输出脉冲能量达0.8mJ。     

产生蓝色相干辐射和实现Nd:YAG 1.0642μm倍频90°非临界相位匹配的Nb:KTiPO4

本文报道了用熔盐顶部籽晶法生长Nb浓度(0～13)mol%的Nb:KTP晶体的倍频的Ⅱ型相位匹配的截止波长和Nd:YAG1.0642μm及Nd:YA1O₃1.0795μm激光在这些晶体中倍频的最佳相位匹配角的测量结果.从中可看出,由于Nb⁵⁺的引入使KTP晶体倍频的Ⅱ相位匹配的截止波长有效蓝移,目前已使截止波长蓝移至937nm且有效产生468.5nm的倍频蓝光.同时Nb⁵⁺的引入使Nd:YAG1.0642μm激光和Nd:YA1O₃倍频的最佳相位匹配方向产生很大的变化,目前已使Nb:KTP晶体倍频的最佳相位匹配方向为θ=88.32°、Φ=0°,非常接近于90°非临界相位匹配方向.     

Cl/HN3/I2全气相化学激光体系的化学动力学模拟计算

 对Cl/HN₃/I₂产生NCl(a)/I激光的过程进行了化学动力学计算，主要考察了Cl,HN₃和I₂的初始粒子数密度及其配比对小信号增益系数的影响。结果发现,当温度为400K, 初始Cl粒子数密度为1×10¹⁵，1×10¹⁶和1×10¹⁷cm^-3时,小信号增益系数分别达到1.6×10^-4,1.1×10^-3和1.1×10^-2cm^-1，获得最佳小信号增益系数的HN₃和I₂的初始粒子数密度分别为初始Cl粒子数密度的1～2倍和2%～4%。同时，对Cl，HN₃和I₂配比对小信号增益系数和增益持续时间的影响进行了讨论。     

1313nm脉冲泵浦下掺Er3+光纤中多波长可见光的产生

本文报道了以1313nmNd:YLF激光脉冲泵浦掺饵(Er³⁺)单模GeO₂/SiO₂光纤而产生多波长可见光的实验,在该光纤中观察到(463～510)nm间的多波长放大自发辐射过程,此过程对应于Er³⁺离子的²G_7/2等几个激发态到⁴I_13/2亚稳态的跃迁.其激发过程是分步的四光子吸收过程,同时,掺饵光纤的红外发射峰1530nm(⁴I_13/2-⁴I_15/2)与1313nm泵浦光之间的三波混频过程也对这一区间的连续多峰的光谱结构有贡献.实验中还观察到540nm附近的绿光辐射.     

掺杂比对CdGe(As11-xPx)2倍频与参量振荡的影响

 在相位匹配和可接受掺杂比理论的基础上，针对CdGe((As1_1-xP_x)₂晶体，研究了掺杂比对频率转换的影响。依据Sellmeier方程得到了倍频和Ho³⁺:YLF与Cr:Er:YSGG激光器泵浦光学参量振荡的相位匹配调谐曲线，并给出了不同掺杂下的可接受掺杂比。结果表明：掺杂晶体可实现2~9 μm范围内非临界相位匹配的倍频和2~18 μm的参量光产生；随着掺杂比的增大，可接受掺杂比近似线性减小，并随着波长改变展现出了不同变化趋势。     

深紫外和频晶体CLBO产生193 nm激光的频率变换

 简述了深紫外和频晶体CLBO的光学特性。根据相位匹配角公式、非线性有效系数公式、走离角公式和允许角公式，详细计算了CLBO晶体和频产生193 nm激光时的相位匹配角、非线性有效系数、和频时谐波走离角、允许角的具体数值。根据这些数值，并考虑产业化的要求，对目前几种和频方式进行了比较，最终选定波长为λ₁=2 100 nm的o光和波长为λ₂=213 nm的e光作为基频光进行和频的匹配方式。此方式相位匹配角为51.6°，具有大的非线性有效系数0.97，小的走离角3.7°，大的允许角1.9×10^-6 rad·mm，是非常理想的产生193 nm激光的匹配方式。     

B介子稀有衰变与荷电PG玻色子企鹅图贡献

计算了荷电PG玻色子P^±和P^±₈对B介子稀有衰变过程B→X_s,dνν和B_s,d→1⁺1^－(l=e,μ,τ)的企鹅图和箱图贡献.计算表明:(a)荷电PG玻色子可以对B介子稀有衰变分枝比Br(B→X_s,dνν)和Br(B_s,d→1⁺1^－)给出3～5倍的增强;(b)在大部分参数空间内,色八重态PG玻色子P₈^±起主要作用.     

Optimization of optical characteristics of In0.29Ga0.71As0.99N0.01/GaAs straddled nano-heterostructure

Designing of a nanoscale Quantum Well (QW) heterostructure with a well thickness of ～60?Å is critical for many applications and remains a challenge. This paper has a detailed study directed towards designing of In_0.29Ga_0.71As_0.99N_0.01/GaAs straddled nanoscale-heterostructure having a single QW of thickness ～60?Å and optimization of optical and lasing characteristics such as optical and mode gain, differential gain, gain compression, anti-guiding factor, transparency wavelength, relaxation oscillation frequency (ROF), optical power and their mutual variation behavior. The outcomes of the simulation study imply that for the carrier concentration of ～2?×?10¹⁸cm^?3 the optical gain of the nano-heterostructure is of 2100?cm^?1 at the wavelength is of 1.30?μm. Though the obtained gain is almost half of the gain of InGaAlAs/InP heterostructure, but from the wavelength point of view the InGaAsN/GaAs nano-heterostructure is also more desirable because the 1.30?μm wavelength is attractive due to negligible dispersion in the silica based optical fiber. Hence, the InGaAsN/GaAs nano-heterostructure can be very valuable in optical fiber based communication systems.     

Studies of a high performance TE CO2 laser using additives

It has been observed that significant increases (～ 40%) in both the small-signal gain and laser efficiency occur when small, carefully controlled quantities of tripropylamine are added to the gas mixture of a TE CO₂ laser. The results obtained are compared with the predictions of a detailed molecular kinetics model and are shown to be consistent with the proposal that doping helps to maintain the discharge uniformity at high energy loadings. With the small TE laser employed, the use of tripropylamine has enabled laser energy densities of ～ 47J 1^-1 atm^-1 to be achieved at a discharge efficiency of ～ 10%     

Internal photoemission and plasmon gain in solid and thin films of Al

Weak features in the electron spectrum of Al excited by bremsstrahlung radiation from a Cu anode have been studied using a recently developed multidetector. A feature at ～1410 eV which has been identified as the Al 2p internal photoelectron line was found to have an intensity 4.2 × 10^?3 times that of the Al KL_2,3L_2,3:¹D₂ Auger line, in agreement with a simple theoretical treatment. The identification of this feature is confirmed by the observation of an ～67% decrease in its intensity in spectra obtained from clean Al films in the thickness range 3.1–34.0 nm. The intensity of a plasmon gain peak at ～1404 eV is found to be independent of thickness for films of thickness greater than 7.5 nm.     

Ultrafast nonlinear processes in quantum-dot optical amplifiers

Ultrafast gain dynamics in quantum-dot optical amplifiers has been studied by using the pump-probe and four-wave mixing (FWM) techniques. It was found that there are at least three nonlinear processes, which are attributed to carrier relaxation to the ground states, phonon scattering, and carrier capture from the wetting layers into the quantum dots (QDs). The relevant time constants were evaluated to be ～90 fs, ～260 fs, and ～2 ps, respectively, under a 50 mA bias condition. The compressed gain recovered to 3% of its initial value in 4 ps, and no recovery component slower than 2 ps could be seen in the temporal range tested. This is quite different from the feature in quantum wells, where a very slow component (> 50 ps) exists. This suggests a possibility of enhancing the operation speed of semiconductor optical amplifiers by using QDs as an active layer. The third-order optical susceptibility (χ⁽³⁾) has been evaluated by means of both nonlinear transmission and FWM experiments. The results show that the nonlinearity expressed by χ⁽³⁾/g ₀ is quite similar to that of bulk and quantum wells, which can be explained by the similar relaxation times.     

Tm3+掺杂锗铌酸盐玻璃及其红外光谱特性

用高温熔融法制备了相同质量百分比浓度4%Tm₂O₃掺杂浓度下(90-x)GeO₂-xNb₂O₅-10Na₂O(其中数字为摩尔百分比x=1,2,4,6,8)以及Tm₂O₃掺杂浓度分别为质量百分比1%,2%,3%,4%下86GeO₂-4Nb₂O₅-10Na₂O(其中数字为摩尔分数)系列玻璃.研究了Nb₂O₅组分对玻璃热稳定性,荧光强度和J-O参数的影响.应用Judd-Ofelt理论,计算了Tm³⁺离子在Nb₂O₅浓度不同时的J-O强度参数(Ω₂,Ω₄,Ω₆)及Tm³⁺离子各激发态能级的自发跃迁概率、荧光分支比以及辐射寿命等光谱参量.根据McCumber理论,计算了Tm³⁺离子能级³F₄→³H₆(1.8 μm)跃迁的吸收截面和受激发射截面.从获得的吸收截面、发射截面与离子掺杂浓度计算了1.8 μm荧光波段的增益截面曲线.在808 nm波长光的激发下,研究了Tm³⁺掺杂玻璃在1.47与1.8 μm附近的荧光特性.发现当Tm₂O₃掺杂浓度为质量百分比3%时,在1.8 μm处的荧光强度达最大,然后随着掺杂浓度的增大,其荧光强度反而降低;当Nb₂O₅摩尔分数含量大约在2%时,Tm³⁺在1.8 μm处的荧光强度最强.并讨论了Nb₂O₅组分变化对玻璃结构与光谱特性的影响情况. 关键词： 3+掺杂锗铌酸盐玻璃')" href="#">Tm³⁺掺杂锗铌酸盐玻璃 红外光谱性质 交叉弛豫 2O₅')" href="#">Nb₂O₅     

Effect of MeV electron irradiation on the free volume of polyimide

The free volume of the microvoids in the polyimide samples, irradiated with 6 MeV electrons, was measured by the positron annihilation technique. The free volume initially decreased the virgin value from ～13.70 to ～10.98 Å³ and then increased to ～18.11 Å³ with increasing the electron fluence, over the range of 5?×?10¹⁴ – 5?×?10¹⁵ e/cm². The evolution of gaseous species from the polyimide during electron irradiation was confirmed by the residual gas analysis technique. The polyimide samples irradiated with 6 MeV electrons in AgNO₃ solution were studied with the Rutherford back scattering technique. The diffusion of silver in these polyimide samples was observed for fluences >2?×?10¹⁵ e/cm², at which microvoids of size ≥3 Å are produced. Silver atoms did not diffuse in the polyimide samples, which were first irradiated with electrons and then immersed in AgNO₃ solution. These results indicate that during electron irradiation, the microvoids with size ≥3 Å were retained in the surface region through which silver atoms of size ～2.88 Å could diffuse into the polyimide. The average depth of diffusion of silver atoms in the polyimide was ～2.5 μm.     

57Fe M?ssbauer analysis of the Upper Triassic-Lower Jurassic deep-sea chert: Paleo-redox history across the Triassic-Jurassic boundary and the Toarcian oceanic anoxic event

We investigated the paleo-redox change across the Triassic-Jurassic (T-J) boundary (～200?Ma) and the Early Toarcian oceanic anoxic event (T-OAE; ～183?Ma) recorded in the Upper Triassic to Lower Jurassic pelagic deep-sea cherts in the Inuyama area, Central Japan. The present ⁵⁷Fe M?ssbauer spectroscopic analysis for these cherts identified five iron species, i.e., hematite (α-Fe₂O₃), pyrite (FeS₂), paramagnetic Fe^3?+?, and two paramagnetic Fe^2?+? with different quadrupole splittings. The occurrence of hematite and pyrite in deep-sea cherts essentially indicates primary oxidizing and reducing depositional conditions, respectively. The results confirmed that oxidizing conditions persisted in deep-sea across the T-J boundary. In contrast, across the T-OAE, deep-sea environment shifted to reducing conditions. The first appearance of the gray pyrite-bearing chert marked the onset of the deep-sea oxygen-depletion in the middle Pliensbachian, i.e., clearly before the shallow-sea T-OAE.     

Passivation of aluminium–n+ silicon contacts for solar cells by ultrathin Al2O3 and SiO2 dielectric layers

Ultra‐thin thermally grown SiO₂ and atomic‐layer‐deposited (ALD) Al₂O₃ films are trialled as passivating dielectrics for metal–insulator–semiconductor (MIS) type contacts on top of phosphorus diffused regions applicable to high efficiency silicon solar cells. An investigation of the optimum insulator thickness in terms of contact recombination factor J_{0_cont} and contact resistivity ρ_c is undertaken on 85 Ω/□ and 103 Ω/□ diffusions. An optimum ALD Al₂O₃ thickness of ～22 Å produces a J_{0_cont} of ～300 fAcm^–2 whilst maintaining a ρ_c lower than 1 mΩ cm² for the 103 Ω/□ diffusion. This has the potential to improve the open‐circuit voltage by a maximum 15 mV. The thermally grown SiO₂ fails to achieve equivalently low J_{0_cont} values but exhibits greater thermal stability, resulting in slight improvements in ρ_c when annealed for 10 minutes at 300 °C without significant changes in J_{0_cont}. The after‐anneal J_{0_cont} reaches ～600 fAcm^–2 with a ρ_c of ～2.5 mΩ cm² for the 85 Ω/□ diffusion amounting to a maximum gain in open‐circuit voltage of 6 mV. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Polycrystalline GaSb films prepared by the coevaporation technique

Gallium antimonide (GaSb) films were deposited onto fused silica and n-Si (100) substrates by coevaporating Ga and Sb from appropriate evaporation sources. The films were polycrystalline in nature. The size and the shape of the grains varied with the change in the substrate temperature during deposition. The average surface roughness of the films was estimated to be 10 nm. Grain boundary trap states varied between 2×10¹² and 2.2×10¹² cm^?2 while barrier height at the grain boundaries varied between 0.09 eV and 0.10 eV for films deposited at higher temperatures. Stress in the films decreased for films deposited at higher temperatures. XPS studies indicated two strong peaks located at ～543 eV and ～1121 eV for Sb 3d_3/2 and Ga 2p_3/2 core-level spectra, respectively. The PL spectra measured at 300 K was dominated by a strong peak located ～0.55 eV followed by two low intensity peaks ～0.63 eV and 0.67 eV. A typical n-Si/GaSb photovoltaic cell fabricated here indicated V _oc～311 mV and J～29.45 mA/cm², the density of donors (N _d)～3.87×10¹⁵ cm^?3, built in potential (V _bi)～0.48 V and carrier life time (τ)～28.5 ms. Impedance spectroscopy measurements indicated a dielectric relaxation time ～100 μs.     

A study of energy transfer phenomenon leading to photon up-conversion in Ho3+:Yb3+:CaF2 crystalline powders and its temperature sensing properties

When Ho³⁺:Yb³⁺:CaF₂ crystalline powders prepared by combustion synthesis were exposed to near-infrared (λ ～ 975 nm) radiation, intense photon up-conversion (UC) was observed at the visible with emission bands peaked at ～ 545, ～650 and ～750 nm identified as 4f-4f transitions from higher levels (⁵F₄, ⁵S₂) and ⁵F₅ to lower levels ⁵I₈ and ⁵I₇ of Ho³⁺. The emission bands at the green and red, in particular, have been demonstrated to be useful for temperature sensing based on luminescence intensity ratio technique. However, no model is available in literature to explain the change of the electronic populations of states (⁵F₄, ⁵S₂) and ⁵F₅ with temperature. The UC phenomenon was studied from both theoretical and experimental points of view. A rate equation model with temperature dependent parameters for Ho³⁺ and Yb³⁺ electronic populations considering a high sensitization of Ho³⁺ ions by Yb³⁺ ions was used. High Yb³⁺ → Ho³⁺ energy transfer efficiency was found (～88% at room temperature). The change with temperature predicted by the model for the luminescence intensity ratio of the UC green and red emission lines agrees well with the experimental data.