中心波长为13．9nm的正入射Mo／Si多层膜

用由铜靶激光等离子体光源等组成的反射率计对自行设计的周期厚度为7.14nm的120层Mo/Si多层膜进行极紫外(EUV)波段反射率测量。由于多层膜层数增加所引起的吸收、膜层界面之间的扩散以及镀膜过程中的膜厚控制误差或表面被氧化(污染)等原因,正入射Mo/Si多层膜在13.9nm处的反射率低于理论计算值73.2%,最后用原子力显微镜(AFM)测量其表面粗糙度为σ=0.401nm。     

磁控溅射制备横向梯度分布的Mo/Si周期多层膜

 采用磁控溅射方法在Si基板上镀制了横向梯度分布的Mo/Si周期多层膜。以X射线掠入射反射测量了横向梯度多层膜的膜系结构,在基板65 mm长度范围内,多层膜周期从8.21 nm线性减小到6.57 nm,周期梯度为0.03 nm/mm。国家同步辐射实验室反射率计的反射率测试结果表明：该横向梯度分布周期多层膜上不同位置,能反射在13.3~15.9 nm波段范围内不同波长的极紫外光,反射率为60%~65%。     

A simultaneous multiwavelength dispersive X-ray reflectometer for time-resolved reflectometry

Aiming for the realization of time-resolved specular X-ray reflectivity measurements on the sub-second to millisecond timescales, a conceptually new method of measuring specular X-ray reflectivity curves is developed. Using this method the entire profile of the reflectivity curve of interest is measured in place. A horizontally convergent X-ray beam which has a one-to-one correlation between its direction and energy is realized using a curved crystal or laterally graded multilayers on an elliptic substrate. The X-ray beam is then incident on the surface of the specimen placed at the focus such that the glancing angle in the vertical direction is the same for all X-ray components, which are reflected in the vertical direction by the surface and diverge in the horizontal plane. The perpendicular momentum transfer continuously changes as a function of the horizontal ray direction even with fixed glancing angle since the wavelength (energy) changes. The X-ray intensity distribution across the beam direction measured downstream of the specimen using a one- or two-dimensional detector represents the X-ray reflectivity curve. Specular X-ray reflectivity curves are measured with exposure times ranging from 2?ms to 1?s for a gold film of thickness 14.3?nm on a silicon substrate. The potential of this method for time-resolved measurements is demonstrated by recording reflectivity curves with a time resolution of 20?ms from a rotating specimen.     

应用碳化硅表面改性技术降低全息-离子束刻蚀光栅刻槽的粗糙度

采用具有良好比刚度和热稳定性的碳化硅材料作为基底,使用全息-离子束刻蚀技术制作了光栅。碳化硅材料表面固有缺陷导致制作的光栅刻槽表面粗糙度高,槽底和槽顶粗糙度分别达到了29.6 nm和65.3 nm (R_q)。通过等离子辅助沉积技术在碳化硅表面镀制一层均匀的硅改性层,经过抛光可以获得无缺陷的超光滑表面。XRD测试表明制备的硅改性层为无定形结构。原子力显微镜的测试结果表明:经过抛光后,表面粗糙度为0.64 nm(R_q)。在此表面上制作的光栅刻槽表面粗糙度明显降低,槽底和槽顶粗糙度分别为2.96 nm和7.21 nm,相当于改性前的1/10和1/9。     

Development of high-throughput, high-damage-threshold beam separator for 13 nm high-order harmonics

We demonstrate a high-throughput, high-damage-threshold beam separator for wavelengths shorter than 30 nm, which uses a 10 nm thick niobium nitrogen film prepared on a Si substrate, set at the Brewster angle relative to the pump wavelength. The film was deposited by rf reactive magnetron sputtering on a Si substrate. The beam separator has an attenuation ratio of 0.01 and a damage-threshold intensity of at least 0.8 TW/cm2 for a 26 fs pump pulse. The measured reflectivity of the beam separator exceeded 70% in a wavelength range of 13-18 nm. This broadband beam separator may be used to eliminate energetic laser pulses from longitudinally pumped x ray lasers as well as from high-order harmonics.     

太阳电池中新腐蚀液实现纳米黑硅表面的一步腐蚀制备

通过引入添加剂,调节腐蚀溶液的pH值,实现了一步法制备黑硅表面. 在取得低表面反射率的同时,减小了黑硅层的腐蚀深度,对于16 min腐蚀的黑硅层,其表面加权平均反射率可达5%(300～1200 nm),但腐蚀深仅约为200 nm. 减小腐蚀深度能够降低黑硅太阳电池的表面复合速率,从而提高太阳电池性能,尤其是开路电压及填充因子. 以新腐蚀液制备的黑硅为衬底,在常规太阳电池产线上制备大面积p-Si黑硅太阳电池,实现了15.63%的转换效率,具有高的开路电压(624.32 mV)和填充因子(77.88%),改进了大面积黑硅太阳电池的性能.     

Antireflective properties of porous Si nanocolumnar structures with graded refractive index layers

We report on the antireflective characteristics of porous silicon (Si) nanocolumnar structures consisting of graded refractive index layers and carry out a rigorous coupled-wave analysis simulation. The refractive index of Si is gradually modified by a tilted angle electron beam evaporation method. For the fabricated Si nanostructure with a Gaussian index profile of 100 nm, reflectivity (R) of less than 7.5% is obtained with an average value of approximately 2.9% at the wavelength region of 400-800 nm. The experimental results are reasonably consistent with the simulated results for the design of antireflective Si nanostructures.     

超高阈值Pick-off反射镜的研制

 采用水中抛光技术抛制了90mm×60mm×10 mm的K₉玻璃基片,表面粗糙度达1nm。在APS1504镀膜机上,摸索了电子束蒸发镀膜的最佳工艺条件,较稳定地在该超光滑玻璃表面上镀制了对波长1054 nm、入射角45°、反射率R≥99.5%的反射膜。膜层的抗激光损伤阈值可达26 J/cm²(1054nm, 1ns),镀膜后该玻璃基片反射波前可达l /10(p-v),最终制备了超高阈值Pick-off反射镜。     

Surface disorder in c-Si induced by swift heavy ions

The disorders induced in crystalline silicon (c-Si) through the process of electronic energy loss in the swift heavy ion irradiation were investigated. A number of silicon <1 0 0> samples were irradiated with 65 MeV oxygen ions at different fluences, 1×10¹³ to 1.5×10¹⁴ ions/cm², and characterized by the Raman spectroscopy, the optical reflectivity, the X-ray reflectivity, the atomic force microscopy (AFM) and the X-ray diffraction (XRD) techniques. The intensity, redshift, phonon coherence length and asymmetric broadening associated with the Raman peaks reveal that stressed and disordered lattice zones are produced in the surface region of the irradiated silicon. The average crystallite size, obtained by analyzing Raman spectrum with the phonon confinement model, was very large in the virgin silicon but decreased to<100 nm dimension in the ion irradiated silicon. The results of the X-ray reflectivity, AFM and optical reflectivity of 200–700 nm radiation indicate that the roughness of the silicon surface has enhanced substantially after ion irradiation. The diffusion of oxygen in silicon surface during ion irradiation is evident from the oscillation in the X-ray reflectivity spectrum and the sharp decrease in the reflectivity of 200–400 nm radiation. The rise in temperature, estimated from the heat spike model, was high enough to melt the local silicon surface. The results of XRD indicate that lattice defects have been induced and a new plane <2 1 1> has been formed in the silicon <1 0 0>after ion irradiation. The results of the present study show that the energy deposited in crystalline silicon through the process of electronic energy loss ～0.944 keV/nm per ion is sufficient to induce disorders of appreciable magnitude in the silicon surface even at a fluence of ～10¹³ ions/cm².     

多晶硅表面陷阱坑形貌的光学性能模拟

采用COMSOL Multiphysics 3.5a有限元分析软件中的RF模块对3种硅片绒面的陷阱坑形貌(轻度腐蚀、正常腐蚀和过度腐蚀)的光学性能进行了数值模拟.通过求解麦克斯韦方程组和材料本构方程,获得了3种陷阱坑的表面电场z分量、表面磁场y分量和反射率的变化规律.结果表明:当波长为600 nm时,轻度腐蚀陷阱坑的表面电场z分量和表面磁场y分量的数值最小,反射率最高(约为35%);正常腐蚀陷阱坑的表面电场z分量和表面磁场y分量其次,反射率约为17%;过度腐蚀陷阱坑的表面电场z分量和表面磁场y分量的数值最大,反射率最低(约为10%).通过实验和模拟结果对比可知,模拟值和试验值的反射率变化趋势基本一致,两者吻合较好,可为实际生产和试验提供理论参考.     

多晶硅表面陷阱坑形貌的光学性能模拟

采用COMSOL Multiphysics 3.5a有限元分析软件中的RF模块对3种硅片绒面的陷阱坑形貌(轻度腐蚀、正常腐蚀和过度腐蚀)的光学性能进行了数值模拟.通过求解麦克斯韦方程组和材料本构方程,获得了3种陷阱坑的表面电场z分量、表面磁场y分量和反射率的变化规律.结果表明:当波长为600 nm时,轻度腐蚀陷阱坑的表面电场z分量和表面磁场y分量的数值最小,反射率最高(约为35％);正常腐蚀陷阱坑的表面电场z分量和表面磁场y分量其次,反射率约为17％;过度腐蚀陷阱坑的表面电场z分量和表面磁场y分量的数值最大,反射率最低(约为10％).通过实验和模拟结果对比可知,模拟值和试验值的反射率变化趋势基本一致,两者吻合较好,可为实际生产和试验提供理论参考.     

Formation of colorized silicon by femtosecond laser pulses in?different background gases

A single-crystal silicon(111) wafer surface fixed on an x–y translation stage is scanned with a focused femtosecond laser beam at a wavelength of 800 nm under different atmospheres (air, vacuum, and nitrogen). Different colors from different angles on the surface of the silicon then appear. From the result of the experiments, periodic ripple surface structures emerge on the surface of colorized silicon, and the phenomenon is more obvious in vacuum and nitrogen than in air. The periods of the surface structures on silicon are not the same in the different atmospheres. Under vacuum, the period is the longest and is closer to the wavelength of the laser irradiation. Different from metals, the range of energy density is smaller when the colorized silicon appears with femtosecond laser pulses. Through SEM, TEM, and AFM, we observe in detail the microstructures of colorized silicon that forms in air, vacuum, and nitrogen and analyze the possible physical mechanism. Finally, research into the optical reflection of the colorized silicon indicates that the reflectivity is not higher than 30% in the 250–800 nm range.     

Nanometric thinning of bonded silicon wafers using sacrificial anodic oxidation and investigated by X-ray reflectivity

X-ray reflectivity and atomic force microscopy are used to investigate silicon oxide ultra-thin films. Quantitative results are shown using a reflectivity simulation model based on kinematical X-ray theory. Changes in film thickness are discussed in relation to current density, voltage, charge and anodization time. The density and resistivity of silicon oxide are calculated and compared to that of thermal oxide. The electrical field existing in the layer during anodization is estimated. Surface roughness is also measured locally and averaged over the entire surface, producing a low value that meets microelectronic requirements. Thickness is carefully controlled. We show that ultra-thin silicon oxide films are of very high quality. Similar investigations are made on a twisted bonded silicon substrate obtained by the molecular bonding of two silicon wafers. It is shown that the silicon oxide is also of very good quality and can be used as a sacrificial silicon oxide in thinning down the upper silicon film. Controlled, accurate thinning is achieved down to a thickness of 10 nm, the level which is required for etching the dislocation network present at the bonding interface.     

Specular reflection of very slow metastable neon atoms from a solid surface

An ultracold narrow atomic beam of metastable neon in the 1s3[(2s)(5)3p:1P0] state is used to study specular reflection of atoms from a solid surface at extremely slow incident velocity. The reflectivity on a silicon (1,0,0) surface and a BK7 glass surface is measured at the normal incident velocity between 1 mm/s and 3 cm/s. The reflectivity above 30% is observed at about 1 mm/s. The observed velocity dependence is explained semiquantitatively by the quantum reflection that is caused by the attractive Casimir-van der Waals potential of the atom-surface interaction.     

三硼酸锂晶体上1064 nm,532 nm,355 nm三倍频增透膜的设计

采用矢量法设计了三硼酸锂晶体上1064 nm、532 nm和355 nm三倍频增透膜,结果表明1064 nm、532 nm和355 nm波长的剩余反射率分别为0.0017%、0.0002%和0.0013%。根据误差分析,薄膜制备时沉积速率精度控制在 5.5%时,1064 nm、532 nm和355 nm波长的剩余反射率分别增加至0.20%、0.84%和1.89%。当材料折射率的变化控制在 3%时,1064 nm处的剩余反射率增大为0.20%,532 nm和355 nm处分别达0.88%和0.24%。与薄膜物理厚度相比,膜层折射率对剩余反射率的影响大。对膜系敏感层的分析表明,在1064 nm和355 nm波长,从入射介质向基底过渡的第二层膜的厚度变化对剩余反射率的影响最大,其次是第一膜层。在532 nm波长,第一和第三膜层是该膜系的敏感层。同时发现,由于薄膜材料的色散,1064 nm5、32 nm和355 nm波长的剩余反射率分别增加至0.15%、0.31%和1.52%。     

MOCVD多功能在线监测探头的设计与实现

根据MOCVD在线监测设备的发展需要,设计了一种多功能在线监测探头,能够同时实现带反射率修正的三种红外辐射测温以及两个波长的反射率曲线监测,即:940nm/1 550nm双波长比色测温、940nm单色辐射测温、1 550nm单色辐射测温、940nm反射率曲线以及1 550nm反射率曲线监测.对探头的比色测温性能进行测试分析,并利用该探头对Si(111)衬底在我国自主研发的MOCVD系统中生长InGaN/GaN MQW结构蓝光LED外延片进行在线监测.结果分析表明:比色测温900℃~1 100℃范围内精度高于1℃;在700℃~1 100℃范围内重复性误差均在0.7℃内;距离容差性为2mm;三种红外测温最低量程均为435℃;并能有效避免探测孔有效面积变化的影响;由940nm反射率曲线得:n-GaN层的膜厚监测相对误差为3.6%.该设计能够同时实现MOCVD在线测温及膜厚测量,可为MOCVD在线监测设备开发提供参考.     

基于BiFeO_3/ITO复合膜表面钝化的黑硅太阳电池性能研究

采用金属银辅助化学刻蚀法在制绒的硅片表面刻蚀纳米孔形成微纳米双层结构,以期获得高吸收率的太阳能电池用黑硅材料.鉴于微纳米结构会在晶硅表面引入大量的载流子复合中心,利用磁控溅射技术在黑硅太阳电池表面制备了BiFeO_3/ITO复合膜,并对其表面性能和优化效果进行了探索.实验制备的具有微纳米双层结构的黑硅纳米线长约180—320 nm,在300—1000 nm波长范围内入射光反射率均在5%以下.沉积BiFeO_3/ITO复合薄膜后的黑硅太阳能电池反射率略有提高,但仍然具有较强的光吸收性能;采用BiFeO_3/ITO复合膜的黑硅太阳能电池开路电压和短路电流密度分别由最初的0.61 V和28.42 mA/cm~2提升至0.68 V和34.57 mA/cm~2,相应电池的光电转化效率由13.3%上升至16.8%.电池综合性能的改善主要是因为沉积BiFeO_3/ITO复合膜提高了电池光生载流子的有效分离,从而增强了黑硅太阳电池短波区域的光谱响应,表明具有自发极化性能的BiFeO_3薄膜对黑硅太阳能电池的表面性能可起到较好的优化作用.     

A new texturing technique of monocrystalline silicon surface with sodium hypochlorite

This work proposes a new texturing technique of monocrystalline silicon surface for solar cells with sodium hypochlorite. A mixed solution consisting of 5 wt% sodium hypochlorite and 10 vl% ethanol has been found that results in a homogeneous pyramidal structure, and an optimal size of pyramids on the silicon surface. The textured silicon surface exhibits a lower average reflectivity (about 10.8%) in the main range of solar spectrum (400–1000 nm).     

应用离子束修正高精度CGH基底

计算全息图(CGH)作为零位补偿器广泛应用于高精度非球面的检测中,但CGH的基底误差直接限制了非球面的检测精度。为了获得超高精度的CGH基底,提出了应用离子束修正CGH基底的加工工艺。采用不同束径的离子束去除函数对一边长152 mm(有效口径140 mm圆形区域)、厚6.35 mm的正方形熔石英CGH基底分别进行了精抛、精修和透射波前修正实验。经过总计7轮的迭代修正,最终获得了透射波前为PV值20.779 nm、RMS值0.685 nm的超高精度CGH基底。实验结果表明:应用离子束修正高精度CGH基底的加工工艺具有较大优势,不仅具有较高的加工效率而且可以获得超高的加工精度。     

K9和石英玻璃基片上Au膜真空紫外反射特性研究

采用离子束溅射法,分别在经过不同前期清洗方法处理过的K9及石英玻璃光学基片上,选择不同的镀膜参量,镀制了多种厚度的Au膜。对镀制的Au膜在真空紫外波段较宽波长范围内的反射率进行了连续测量。测试结果表明:辅助离子源的使用方式、Au膜厚度对反射镜的反射率有重大影响。基片材料、镀前基片表面清洗工艺等对反射率也有一定影响。采用镀前离子轰击,可显著提高Au膜反射率及膜与基底的粘合力;获得最高反射率时的最佳膜厚与基片材料、镀膜工艺密切相关。对经过离子清洗的石英基片,膜厚在30 nm左右反射率最高;比较而言,石英基片可获得更高的反射率;辅助离子源的使用还显著影响获得最高反射率时对应的最佳膜厚值,且对K9基片的影响更显著。