Y3Al5O12:Ce3+,Cr3+和Y3Al5O12:Ce3+,pr3+,Cr3+荧光粉体系中的能量传递

通过在YAG:Ce3+和YAG:Ce3+,pr3+荧光粉体系中分别掺入Cr3+离子来提高蓝光管芯白光LED的显色指数.Cr3+离子的加入,增加了红光发射,这归因于Cr3+的2E-4 A2跃迁的零声子线和声子边带发光.Ce3+→Cr3+的能量传递是增强红光发射的重要方式,在YAG:Ce3+,Cr3+体系中,由发射光谱得到...     

Anisotropy of the linear and quadratic magnetic birefringence in rare-earth semiconductors (γ-Ln2S3 (Ln=Dy3+, Pr3+, Gd3+, La3+)

The field and angular dependence of the magnetic linear birefringence (MLB) in noncentrosymmetric cubic (symmetry class T _d) rare-earth (RE) semiconductors γ-Ln₂S₃ (Ln=Dy³⁺, Pr³⁺, Gd³⁺, La³⁺) was studied. The field dependence of the MLB in Dy₂S₃ and Pr₂S₃ is a combination of two contributions, quadratic and linear with respect to the magnetic induction B, both possessing a strong anisotropy. The quadratic birefringence related to the Cotton-Mouton effect manifestations at a wavelength of λ=633 nm is characterized in Dy₂S₃ by the value of β=1.5 deg/(cm T²) and the anisotropy parameter a=?0.7 and in Pr₂S₃, by β=0.2 deg/(cm T²) and a=2. The non-reciprocal MLB caused by the magnetic-field-induced spatial dispersion reaches γ 0.55 and 0.71 deg/(cm T) in Dy₂S₃ and Pr₂S₃, respectively. The relationship between parameters A and g of the γ_ijkl tensor describing contributions of the B _ik_j type to the dielectric tensor ε_ij(ω, k, B) is A=2g in Dy₂S₃ (as well as in boracite crystals containing 3d ions), which is characteristic of the second-order magnetoelectric permittivity manifestations in the optical frequency range. In Pr₂S₃, the relationship A=3.3g is evidence of manifestations of the additional quadrupole mechanism. A comparison of the Cotton-Mouton and Faraday effects in Ln₂S₃ and in magnetic semiconductors Cd_1?x Mn_xTe shows a principal difference between these systems and indicates that both phenomena in Ln₂S₃ are determined by the optical transitions in RE ions rather than by the interband or exciton transitions. This is also confirmed by the comparison of the Cotton-Mouton effect manifestations in Ln₂S₃, in dielectric Dy₃Ga₅O₁₂ and Dy₃Al₅O₁₂ single crystal cubic garnets, and in Dy₂O₃. An analysis of the non-reciprocal MLB mechanisms related to manifestations of the local interconfiguration optical transitions 4f ^N→ 4f ^N?15d in RE ions showed that this phenomenon, in contrast to the Cotton-Mouton and Faraday effects, is caused by the presence of odd components of the crystal field acting upon the RE ion in Ln₂S₃. In Gd₂S₃, as well as in diamagnetic Ln₂S₃, neither the Cotton-Mouton effect nor the non-reciprocal MLB are manifested at T=294 K, which is explained by different microscopic mechanisms of the magnetooptical phenomena for ions in the S-state and diamagnetic ions, on the one hand, and RE ions with nonzero orbital moment, on the other hand.     

NaYF4:Eu3+,Tm3+,Yb3+材料中Stokes和反Stokes发光研究

合成了Eu3+,Tm3+和Yb3+掺杂的NaYF4材料.360 nm光激发呈蓝色发光,峰值位于452 nm,对应Tm3+的1D2→3F4跃迁;395 nm光激发旱橙色发光,峰值位于591 nm,对应Eu3+的5D0→7F1跃迁;409 nml光激发呈红色发光,峰值位于613 nm,对应Eu3+的5D0→7F2跃迁;980 nm光激发呈蓝色和红色发光,发光峰位于474和646 nm.蓝光来源Tm3+的1G4→3H6跃迁,红光来源Tm3+的1G4→3F4跃迁.在双对数曲线中,蓝光474 nm和红光646 nm的斜率分别为2.1和2.4,在980 nm光激发下,蓝光和红光发射都是双光子过程.还研究了材料的吸收光谱,并利用X射线衍射,扫描电镜测试了材料的物相结构和微观彤貌.结果表明:NaYF4:Eu3+,Tm3+,Yb3+材料具有较规则的六方相结构,结品良好.     

YLiF4: Er3+, Tm3+, Yb3+中Tm3+浓度对上转换发光的影响

利用水热法合成了YLiF4: Er3 , Tm3 , Yb3 , 其中Er3 和Yb3 的浓度保持固定不变, 分别为1 mol%和1.5 mol%, Tm3 浓度变化范围是2 mol%～8 mol%. 在这种共掺杂体系中, 同时观察到了Er3 , Tm3 和Yb3 的吸收, 且Tm3 的吸收随着其浓度的增强而增强. 在980 nm光的激发下, 当Tm3 浓度很小时, 这种材料的上转换发光为白光. 其中蓝光主要来源于Tm3 的激发态1G4到基态3H6的跃迁, 绿光来源于Er3 的4S3/2和2H11/2到基态4I15/2的跃迁, 红光既来源于Tm3 的1G4→3F4的跃迁, 也来源于Er3 的4F9/2→4I15/2的跃迁. 并且这种上转换发光强度随着Tm3 浓度的增强而降低, 但对应不同能级跃迁的发光强度降低的幅度不同, 这是因为Er3 和Tm3 之间的相互作用.     

Cr3+,Yb3+,Er3+共掺磷酸盐铒玻璃转镜调Q激光性质研究

研究了Cr3+,Yb3+,Er3+共掺磷酸盐铒玻璃转镜调Q激光性质.三种Er2O3掺杂浓度的激光实验结果表明,在Er2O3名义掺杂浓度为0.5wt%时,玻璃的综合激光性质最好,重复频率为0.1Hz时,它的激光阈值功率为14.5mJ,最大输出能量为9.6mJ,斜率效率为0.55%.在同种实验条件下,比较了Cr14和Kigre公司生产的QE-7S激光性质参数,实验表明,前者激光阈值功率稍低,而后者的斜率效率和最大输出功率略高.     

Na2SrSiO4∶Ce3+,Tb3+,Yb3+的制备及近红外量子剪裁发光性质

采用高温固相法制备了新型Na2SrSiO4∶Ce3+,Tb3+,Yb3+的近红外发光材料.对样品可见和近红外激发光谱、发射光谱及荧光寿命的研究表明,Na2SrSiO4∶Ce3+,Tb3+,Yb3+中存在高效的Tb3+→Yb3+的量子剪裁下转换效应,下转换量子效率约为182.4％.Ce3+的共掺大大提高了样品的紫外光吸收,显著敏化了样品的近红外发光效率.研究了Ce3+,Tb3+和Yb3+掺入量对其发光性质的影响.结果表明,当Ce3+的浓度为2％,Tb3+的浓度为13％和Yb3+的浓度为16％时,样品的近红外发光最强.     

LaOBr:Er3+,Tm3+红外跃迁的研究

对在基质LaOBr中分别加入Er3+和Tm3+稀土离子时的红外光谱强度随Er3+和Tm3+离子浓度的变化规律进行了研究.通过对在基质LaOBr中同时加入Er3+和Tm3+稀土离子对它们的发光强度随着浓度的变化呈现不同规律的研究,证实了发生于Er3+和Tm3+稀土离子之间的能量转移是影响Er3+和Tm3+红外发光的重要因素.并且,这种能量转移过程是以共振传递的方式进行的.另外,通过对Er3+的4S3/2能级寿命的测量,给出这种能量转移的直接证据.     

Ce3+,Tb3+氟化物磷光体的发光性质比较

采用溶液反应和固相反应分别合成了Ｋ３ＡｌＦ６基质化合物及ＫＢＦ４：Ｃｅ,Ｔｂ和Ｋ３ＡｌＦ６：Ｃｅ,Ｔｂ等磷光体,研究了它们的光谱特性,并与ＫＡｌＦ４：Ｃｅ,Ｔｂ、ＣａＦ２：Ｔｂ和ＡｌＦ３：Ｃｅ,Ｔｂ等磷光体的发光特性进行了比较。结果发现,ＣａＦ２：Ｃｅ,Ｔｂ、ＡｌＦ３：Ｃｅ,Ｔｂ、ＫＢＦ４：Ｃｅ,Ｔｂ和Ｋ３ＡｌＦ６：Ｃｅ,Ｔｂ等磷光体中Ｃｅ＾３＋对Ｔｂ＾３＋的能量传递不能有效进行,有时Ｔｂ＾３＋起     

Tb3+,Dy3+激活的LaBO3的发光和能量传递

本文研究了在紫外光激发下Tb3+,Dy3+单激活和Tb3++Dy3+共激活的LaBO3体系的发光性能和能量传递.结果表明,Dy3+,Tb3+共存时,Tb3+的发光强度远远大于无Dy3+时的发光强度,证明Dy3+对Tb3+有敏化作用,Dy3+→Tb3+能量传递机理为多极子相互作用的共振传递.     

KZnF3:Ce3+,Tb3+纳米粒子合成与发光

采用微乳液法合成了Ce3 ,Tb3 单掺和双掺KZnF3纳米晶。分析了样品的结构与形态,结果表明,所合成的样品均为单相,颗粒粒度分布均匀。讨论了光谱特性,并与高温固相法合成的产物作了对比。研究发现,KZnF3:Ce3 纳米晶的发射光谱与体相多晶相比,最强峰位置红移约35nm;在KZnF3纳米晶双掺体系中存在Ce3 →Tb3 能量传递,尤其是Tb3 的5D4→7F5跃迁发射显著增强,有望成为一种有发展前途的绿色荧光材料。     

LaGaO3:RE3+(RE3+=Eu3+,Ho3+)的光谱

本文用固态反应合成了钙钛矿型的LaGaO3和LaGaO3:RE3+(RE3+=Eu3+,Ho3+)荧光体,并观察了物相随不同的激活离子浓度的变化。测量了化合物在室温下的反射光谱,激发光谱和荧光光谱。研究了Eu3+的D0→7F2和Ho3+的5S2→5I8的荧光强度与激活离子浓度的关系,发现了浓度猝灭,并得到了最大荧光强度的浓度值。     

Yb3+,Er3+掺杂的SrAl2O4:Eu2+,Dy3+长余辉材料的发光特性

根据Dorenbos能级模型的推论,利用掺杂Yb3+和Er3+对典型的长余辉材料SrAl2O4:Eu2+,Dy3+(简称SAO:ED)的发光特性(发光强度和余辉时间)进行调制.在发光特性分析中,发展并使用了一种简便易行的解析模型,而不是常用的多项e指数衰减函数的经验模型.研究发现,正如Dorenbos所预言的,Yb+3掺杂确实能够提高SAO:ED的发光强度;但进一步研究发现,Yb3+不完全是发光中心,而是一种辅助激发中心.Er3+掺杂效果也和Dorenbos的预言相同,即它是一种俘获中心;但是当Er3+和Yb3+共掺杂时,Er3+却有一种脱俘作用,使得初始发光强度增强,衰减常数变小,但蓄光能力变化不大.     

NaGd(WO 4)2∶Yb^3+,Ho^3+,Cr^3+微米晶的上转换发光与温度特性

采用水热法制备了NaGd(WO4)2(NGW)∶Yb^3+,Ho^3+,Cr^3+微米晶。研究了Cr^3+离子掺杂浓度对样品的晶体结构、微观形貌、上转换发光及温度传感特性的影响。在980 nm激光激发下,所有样品均发射以546 nm为中心的较弱绿光和以660 nm为中心的强红光,分别对应于Ho^3+离子的5F4,5S2→5I8和5F5→5I8能级跃迁。随Cr^3+离子掺杂量增加,绿光发射峰强度逐渐减弱,而红光发射先增大后减小,在10%时达到最大,样品色坐标逐渐向红色区域偏移。样品的变温光谱表明,NGW∶Yb^3+,Ho^3+,10%Cr^3+微米晶具有很好的温度特性,其测温灵敏度在486 K时达到最大,约为0.0337 K^-1,比NGW∶Yb^3+,Ho^3+的灵敏度提高近1倍。     

Yb3+,Er3+掺杂的SrAl2O4:Eu2+,Dy3+长余辉材料的发光特性

根据Dorenbos能级模型的推论,利用掺杂Yb3+和Er3+对典型的长余辉材料SrAl2O4:Eu2+,Dy3+(简称SAO:ED)的发光特性(发光强度和余辉时间)进行调制.在发光特性分析中,发展并使用了一种简便易行的解析模型,而不是常用的多项e指数衰减函数的经验模型.研究发现,正如Dorenbos所预言的,Yb+3...     

Influence of γ-radiation on photoluminescence properties of YPO4:Eu3+,Ce3+ and YPO4:Dy3+,Ce3+ phosphors

Hexagonal YPO₄ phosphors doped with Eu³⁺/Dy³⁺ and co-doped with Ce³⁺ were synthesized by a hydrothermal route assisted using lauric acid as a capping agent. The prepared phosphors were characterized by transmission electron microscopy, infrared spectroscopy, powder X-ray diffraction and photoluminescence spectra. YPO₄: Eu³⁺ gives two red emission peaks at 587 and 610?nm corresponding to ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transitions, respectively. YPO₄: Dy³⁺ exhibits two emission peaks at 485?nm (blue) and 575?nm (yellow) corresponding to ⁴F_9/2→⁶H_15/2 and ⁴F_9/2→⁶H_13/2 transitions, respectively. Ce³⁺ ions enhanced the emission intensity as a co-dopant in both phosphors. Moreover, the effect of γ-radiation in the dose range 5–300?kGy on the photoluminescence behaviour of YPO₄:Eu³⁺,Ce³⁺ and YPO₄:Dy³⁺,Ce³⁺ was also investigated. Quenching of emission intensity, after irradiation at 5 and 300?kGy, was observed in both the phosphors due to loss of excess energy through a non-radiative relaxation process.     

Facile patterning of luminescent GdVO4:Ln (Ln?=?Eu3+, Dy3+, Sm3+) thin films by microcontact printing process

Ordered arrays of luminescent GdVO₄:Ln (Ln = Eu³⁺, Dy³⁺, Sm³⁺) films with dot patterns have been successfully fabricated via microcontact printing method. The soft-lithography process utilizes a PDMS elastomeric mold as the stamp combined with a Pechini-type sol–gel process to produce luminescent patterns on quartz plates, in which a GdVO₄:Ln (Ln = Eu³⁺, Dy³⁺, Sm³⁺) precursor solution was employed as ink. The ordered luminescent GdVO₄:Ln patterns were revealed by optical microscopy and their microstructure, consisting of nanometer-scale particles, as demonstrated by scanning electronic microscopy observations. In addition, photoluminescence and cathodoluminescence were carried out to characterize the patterned GdVO₄:Ln (Ln = Eu³⁺, Dy³⁺, Sm³⁺) samples. Upon UV-light or electron-beam irradiation, the rare earth ions Eu³⁺, Dy³⁺, and Sm³⁺ in the crystalline GdVO₄ host show their characteristic transitions dominated by ⁵D₀–⁷F₂, ⁴F_9/2–⁶H_13/2 ,and ⁴G_5/2–⁶H_7/2, respectively. These results make the combining soft lithography with a Pechini-type sol–gel route have potential applications as rare-earth luminescent pixels for next-generation field-emission display devices.     

惰性离子(La3+,Y3+,Gd3+)对配合物苯乙酮酸邻菲咯啉铕荧光性能的影响

以苯乙酮酸和邻菲咯啉为配体,不同摩尔比铕和惰性离子(La3 ,Y3 ,Gd3 )为中心离子,合成了系列配合物EuxRE1-xL3phen(RE=La,Y,Gd),测定了其荧光激发光谱和荧光发射光谱,研究了惰性离子(La3 ,Y3 ,Gd3 )对Eu3 荧光性能的影响.结果表明,配合物激发光谱相似,均在350～360 nm范围内出现最大激发,属于配体的吸收峰,在398 nm附近出现弱的激发为Eu3 的吸收峰;系列配合物荧光发射光谱相似,均显示Eu3 离子的特征发射光谱,位于583,595,617,654,703 nm附近出现5组强度不同的发射峰,分别归属为Eu3 的5D0-7F0,5D0-7F1,5D0-7F2,5D0-7F3,5D0-7F4能级跃迁.发射光谱表明,系列配合物中La3 离子对Eu3 的荧光发射峰峰位影响最大,EuxLa1-xL3phen中La3 的摩尔分数为0.7时,Eu3 的5D0-7F2跃迁可改变5.2 nm,而Y3 和Gd3 对Eu3 的荧光发射峰峰位影响较弱,配合物EuxY1-xL3phen和EuxGd1-xL3phen中Eu3 的荧光发射峰位变化较小,最大时仅改变2 nm;发射光谱强度表明,La3 对Eu3 的荧光发射影响最大,EuxLa1-xL3phen中La3 含量为0.7时,可使其相对荧光强度增大2倍以上,对其具有很好的敏化作用.这对人们寻找发光性能好、价格便宜的发光材料提供了理论依据.     

含Ce3+,Tb3+简单氟化物磷光体的荧光特性

采用溶液反应和固相反应合成了ＣａＦ２：Ｃｅ,Ｔｂ和ＡｌＦ３：Ｃｅ,Ｔｂ磷光体,研究了它们的光谱特性,结果发现,在ＣａＦ：Ｃｅ,Ｔｂ和ＡｌＦ３：Ｃｅ,Ｔｂ中Ｃｅ＾３＋对Ｔｂ＾３＋的能量传递不能有效进行,有时Ｔｂ＾３＋甚至对Ｃｅ＾３＋起猝灭作用。     

Er3+,Yb3+共掺磷酸盐玻璃沟道波导放大器

在自行研制的Er3 ，Yb3 共掺磷酸盐玻璃基质上用离子交换方法制作出沟导光波导放大器。在110mW的抽运功率下(抽运光波长为980nm)，在1．8cm长的器件上获得了3．8dB的小信号(信号光波长为1．55μm)增益，单位长度上的增益为2．1dB／cm。     

BaGa2Si2O8∶Eu^2+,Eu^3+,Pr^3+的发光性质及其防伪加密应用

采用高温固相法在单一基质中制备了具有多模态发光特性的系列荧光粉BaGa2Si2O8∶Eu2+,Eu3+,Pr3+,掺入适量的Pr3+可显著改善荧光粉的余辉发光性能。结果表明,该系列荧光粉在254 nm或365 nm的光激发下,具有不同颜色的光致发光和余辉发光,体现出多模发光特征;同时该系列荧光粉的余辉发光还具有不同的衰减时间。根据这些发光特性,选用合适的荧光粉制作了系列发光图案。相关典型应用示例表明,该发光图案的多模发光特征可应用于发光防伪应用,而基于其差异化的余辉衰减特性,还可以设计出可动态变化的余辉发光图案,从而增加发光防伪和加密的安全层级。