Spin pumping at the Co2FeAl0.5Si0.5/Pt interface

Spin pumping at the Co2FeAl0.5Si0.5/Pt and Pt/Co2FeAl0.5Si0.5 interfaces has been studied by ferromagnetic resonance technology(FMR). The spin mixing conductance of the Co2FeAl0.5Si0.5/Pt and Pt/Co2FeAl0.5Si0.5 interfaces was determined to be 3.7×1019m 2and 2.1×1019m 2 by comparing the Gilbert damping in a Co2FeAl0.5Si0.5single film, Co2FeAl0.5Si0.5/Pt bilayer film and a Pt/Co2FeAl0.5Si0.5/Pt trilayer film. Spin pumping is more efficient in the Co2FeAl0.5Si0.5/Pt bilayer film than in permalloy/Pt bilayer film.     

Spin pumping at the Co2FeAlo.sSio.5/Pt interface

Spin pumping at the Co2FeAlo.sSio.5/Pt and Pt/Co2FeAIo.sSio.5 interfaces has been studied by ferromagnetic res- onance technology （FMR）. The spin mixing conductance of the Co, FeA~o.sSio.s/Pt and Pt/Co2FeAlo.sSio.5 interfaces was determined to be 3.7~ lO19 m-2 and 2.1 ~ lO19 m 2 by comparing the Gilbert damping in a Co2FeAIo.sSio.5 sin- gle film, Co2FeAlo.sSio.s/Pt bilayer film and a Pt/Co2FeAIo.sSio.s/Pt trilayer film. Spin pumping is more efficient in the Co2FeAlosSios/Pt bilayer film than in permalloy/Pt bilayer film.     

Spin current transmission in Co1-xTbx films

We investigate the spin to charge conversion phenomena in Y₃Fe₅O₁₂/Pt/Co_1-xTb_x/Pt multilayers by both the spin pumping and spin Seebeck effects.We find that the spin transport efficiency is irrelevant to magnetization states of the perpendicular magnetized Co;Tb;films,which can be attributed to the symmetry requirement of the inverse transverse spin Hall effect.Furthermore,the spin transmission efficiency is significantly affected by the film concentration,revealing the dominant role of extrinsic impurity scattering caused by Tb impurity.The present results provide further guidance for enhancing the spin transport efficiency and developing spintronic devices.     

Strong perpendicular magnetic anisotropy in Co2FeAl0.5Si0.5 film sandwiched by MgO layers

Co2FeAl0.5Si0.5 (CFAS)-based multilayers sandwiched by MgO layers have been deposited and annealed at different temperatures. Perpendicular magnetic anisotropy (PMA) with the magnetic anisotropy energy density Ku ≈2.5×106 erg/cm3 (1 erg = 10-7 J) and the coercivity Hc = 363 Oe (1 Oe = 79.9775 A · m-1) has been achieved in the Si/SiO2/MgO (1.5 nm)/CFAS (2.5 nm)/MgO (0.8 nm)/Pt (5 nm) film annealed at 300 ℃. The strong PMA is mainly due to the top MgO layer. The structure can be used as top magnetic electrodes in half-metallic perpendicular magnetic tunnel junctions.     

Electron Holography of Barrier Structures in Co／ZrAlOx／Co Magnetic Tunnel Junctions

We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlOx/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlOx and ZrOx layers are mixed together, indicating that compact AlOx layer cannot be formed in such a bilayer structure of barriers. The Eli results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlOx/Co.     

AA bilayer graphene on Si-terminated SiO2 under electric field

The AA-stacked bilayer graphene/α-SiO2 （001） interfaces with Si terminated atoms are studied in the presence of an electric field F with different intensities by first principles. AA-stacked bilayer graphene is slightly mis-oriented on SiO2 substrate without electric field and the band gap is 0.557 eV. However, as F increases, the AA-stacked bilayer graphene has its layers gradually vertically shifted with each other and, finally, transfers into AB-stacked bilayer graphene and the band gap reduces to 0.252 eV under 0.015 Hartree.     

Magnetic properties of a Pt/Co2FeAl/MgO structure with perpendicular magnetic anisotropy

Microstructures and magnetic properties of Ta/Pt/Co 2 FeAl（CFA）/MgO multilayers are studied to understand perpendicular magnetic anisotropy（PMA） of half-metallic full-Heusler alloy films.PMA is realized in a 2.5-nm CFA film with B2-ordered structure observed by a high resolution transmission electron microscope.It is demonstrated that a high quality interface between the ferromagnetic layer and oxide layer is not essential for PMA.The conversions between in-plane anisotropy and PMA are investigated to study the dependence of magnetic moment on temperature.At the intersection points,the decreasing slope of the saturation magnetization（M s） changes because of the conversions.The dependence of M s on the annealing temperature and MgO thickness is also studied.     

Magnetic properties of a Pt/Co₂ FeAl/MgO structure with perpendicular magnetic anisotropy

Microstructures and magnetic properties of Ta/Pt/Co 2 FeAl(CFA)/MgO multilayers are studied to understand perpendicular magnetic anisotropy(PMA) of half-metallic full-Heusler alloy films.PMA is realized in a 2.5-nm CFA film with B2-ordered structure observed by a high resolution transmission electron microscope.It is demonstrated that a high quality interface between the ferromagnetic layer and oxide layer is not essential for PMA.The conversions between in-plane anisotropy and PMA are investigated to study the dependence of magnetic moment on temperature.At the intersection points,the decreasing slope of the saturation magnetization(M s) changes because of the conversions.The dependence of M s on the annealing temperature and MgO thickness is also studied.     

MICROSTRUCTURE AND FRACTAL FORMATION OF ANNEALED Ge-Au FILM AND Ge-Au/Au BILAYER FILMS

The as-deposited and annealed Ge-Au film and Ge-Au/Au bilayer films have been observed by transmission electron microscopy. The bilayer with a composition of Ge-5at%Au film is amorphous, while the Ge-22at%Au film is polycrystalline. Higher concentration of Au raises the structural heterogeneity and instability. Fractals can be observed in the Ge-5at%Au/Au bilayer samples annealed at 60-100℃. The difference of the fractal patterns generated from Ge-Au/An and a-Ge/Au films call be attributed to the higher heterogeneity and instability in Ge-Au/An bilayers.     

Growth of Structured Non—crystalline Boron—Oxygen—Nitrogen Films and Measurement of Their Electrical Properties

The boron-oxygen-nitrogen(BON) films have been grown on Si wafer by the low-frequency rf-plasma-enhanced metal-organic chemical vapour deposition method.The homogeneous film structure of completely amorphous BON is first fabricated on a low-temperature-made buffer at 500℃ with N2 plasma and is observed with a highresolution-electron microscope by the transmission-electron diffraction.The results show that the interfaces among substrate/buffer/film are clear and straight in the structured film.A heterogeneous film containing nano-sized crystalline particles is also grown by a routine growth procedure as a referential structure,The C-V characteristic is measured on both the amprphous and crystal-containing films by using the metal-oxidesemiconductor structure,The dielectric constants of the films are,therefore,deduced to be 5.9 and 10.5 for the amorphous and crystal-containing films,respectively,The C-V results also indicate that more trapped charges exist in the amorphous film.The binding energy of the B,O.and N atoms in the amprphous film is higher than that in the crystal-containing one,and the N-content in the latter is found to be higher than that in the former by x-ray photo-electron spectroscopy.The different electrical Property of the films is thought to originate from the energy state of the covalent electrons.     

Research on charge-ordering state in La0.5Sr0.5MnO2.88 and La0.5Sr0.5Mn0.5Ti0.5O3 systems

The structural, magnetic and transport properties of La_0.5Sr_0.5MnO_2.88 and La_0.5Sr_0.5Mn_0.5Ti_0.5O₃ samples have been investigated systematically. Indeed, this series has been considered to understand the influence of physical parameters such as oxygen deficiency and titanium doping effect in undoped La_0.5Sr_0.5MnO₃ sample. Ceramic material based on La_0.5Sr_0.5MnO_2.88 exhibits interesting behaviours of charge-ordering (CO), ferromagnetic (FM) states and a good conductivity down to the lowest temperatures. The substitution of Ti for Mn destroyed drastically the CO, damaged the motion of itinerant e_g electrons and changed the local parameters of perovskite cell. A change of the structure from tetragonal to rhombohedral symmetry is observed causing a weakening of double-exchange interaction. The experiment results show that the suppression of the CO is sensitive to the variety of Mn³⁺/Mn⁴⁺ ratio. In a field of 8 T at 10 K, FM and CO phase can be evaluated to be ∼20:80 according to the μ_exp/μ_cal ratio for La_0.5Sr_0.5MnO_2.88, whereas the CO state is suppressed for La_0.5Sr_0.5Mn_0.5Ti_0.5O₃ sample, FM and anti-ferromagnetic (AFM) phase are coexisted and evaluated to be ∼54:46, respectively.     

Picosecond optoelectronic switching in CdS0.5Se0.5

So far only few materials have been investigated for their application in fast opto-electronic switching. These materials are Si, GaAs and InP. The difficulty in obtaining a high resistivity specimen of group IV elemental semiconductors puts constraints on their high power handling capability. Most of the group III–V compounds have the possibility of showing up of Gunn effect at high fields, which has undesirable effect in high voltage switching. We have, therefore, investigated a mixed II–VI compound CdS_0.5Se_0.5 for its potential use as an opto-electronic switch.     

Sound velocity in La0.5Ca0.5MnO3

In this Letter the microscopic theory of the relative change in velocity of sound with temperature of La_0.5Ca_0.5MnO₃ is reported. The phonon Green function is calculated using the Green function technique of Zubarev in the limit of zero wave vector and low temperature. The lattice model electronic Hamiltonian in the presence of the phonon interaction with hybridization between the conduction electrons and the l-electrons is used. The relative change in velocity of sound at various temperatures is studied for different model parameters namely the position of the l-level, the effective phonon coupling strength and hybridization strength. The phonon anomalies observed experimentally at different temperatures are explained theoretically. An abrupt change in velocity at Neel temperature (TN) is observed clearly. It is observed that different parameters influence the velocity of sound.     

Glassy-ferromagnetic behavior in Eu0.5Sr0.5CoO3

Polycrystalline perovskite cobalt oxide Eu_0.5Sr_0.5CoO₃ was prepared by the conventional solid-state reaction method. X-ray powder patterns indicated the prepared samples are pure, cubic perovskite structure (Pm3?m), and with no evidence of any secondary phases. The dc magnetization and ac susceptibility measurements were carried out to investigate the magnetic properties of the sample, and which indicated that cluster-glasses properties are suppressed with the increasing of the coercive field. We denied the possibility of spin-glasses and the existence of the Hopkinson effect in Eu_0.5Sr_0.5CoO₃ through the temperature-dependent ac susceptibility measurements, and explained the magnetic behavior of Eu_0.5Sr_0.5CoO₃ with the competition between magnetic anisotropy and the external magnetic field.     

The microscopic features of (Li0.5La0.5)TiO3

In ionic conducting materials, the crystal structure is closely related to the ionic conductivity. In this research we studied the microscopic features of Li_0.5La_0.5TiO₃ which exhibited a lithium ionic conductivity as high as 1×10⁻³ Scm⁻¹ at room temperature by XRD, TEM and SIMS. It was found that the superstructure was caused by the ordering of La⁺³ and vacancy, producing the 2a_p×2a_p×2a_p unit cell. This ordering was found to be regular in microscopic region, but became irregular in macroscopic region. Li⁺ showed a random distribution which meet the needs for the fast ionic conduction. The second phase was found to be Li₂TiO₃ which existed in the grain boundary junctions.     

Electrical properties of SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. Scanning electron microscopy was applied to investigate the grain structure. The XRD studies revealed an orthorhombic structure in the SBNT 50/50 with lattice parameters a=5.522 Å, b=5.511 Å and c=25.114 Å. The dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material. Its occurrence was ascribed to the presence of ionized space charge carriers such as oxygen vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. The temperature dependence of various electrical properties was determined and discussed. The thermal activation energy for the grain electric conductivity was lower in the high temperature region (T>303.6 °C, E_a−ht=0.47 eV) and higher in the low temperature region (T<303.6 °C, E_a−lt=1.18 eV).     

Ferroelectric relaxor behaviour in Pb(Fe0.5Ta0.5)O3

The relaxor ferroelectric lead iron tantalate, Pb(Fe_0.5Ta_0.5)O₃ (PFT) is synthesized by Coulombite precursor method. The X-ray diffraction pattern of the sample at room temperature shows a cubic phase. The field dependence of dielectric response is measured in a frequency range 0.1 kHz — 1 MHz and in a temperature range from 173–373 K. The temperature dependence of permittivity (ɛ′) shows broad maxima at various frequencies. The frequency dependence of the permittivity maximum temperature (T _m ) has been modelled using Vogel-Fulcher relation.      

K0.5Bi0.5TiO3—Na0.5Bi0.5TiO3系统铁电陶瓷相界的X射线研究

用X射线衍射方法测定了K_0.5Bi_0.5TiO₃—Na_0.5Bi_0.5TiO₃系统不同组分试样的点阵常数和相变温度,确定了四方-三方相界组成。给出了K_0.5Bi_0.5TiO₃和Na_0.5Bi_0.5TiO₃的多晶X射线衍射数据。 关键词：     

SiFe0.5Co0.5 - a weak itinerant ferromagnet

The high field and high pressure magnetic properties of SiFe_0.5Co_0.5 alloy are characteristic of weak itinerant ferromagnets.