基于聚龙一号的钨丝阵Z箍缩内爆辐射特性

介绍了基于聚龙一号装置的Z箍缩诊断和实验布局, 分析了丝数132~300、丝直径5~10 m、丝阵直径13~30 mm的单/双层钨丝阵Z箍缩内爆动力学过程和软X射线辐射特性规律。研究表明, 钨丝阵等离子体的停滞时间与零维薄壳模型计算的停滞时间一致, 内爆轨迹存在偏离, 丝阵等离子体内爆开始前以丝烧蚀为主, 内爆开始时间约为总内爆时间的67%;随着负载质量和半径的增大, 负载电流、内爆停滞时间和X射线辐射脉冲半高宽也相应增加, X射线辐射峰值功率减小。双层钨丝阵的内爆均匀性和一致性优于单层丝阵, 其辐射峰值功率明显高于单层钨丝阵, 但单/双层钨丝阵辐射产额基本相当, 能量转换效率约为15%。此外, 还初步讨论了单层钨丝阵驱动的低密度泡沫动态黑腔辐射功率波形特征及其与纯钨丝阵内爆辐射的差异。     

单壳层喷气Z箍缩内爆特性分析

在“阳”加速器（电流峰值为500—850 kA,上升时间约为85 ns）上利用单壳层喷气负载开展了Z箍缩等离子体内爆实验,获得了等离子体的辐射产额、X光辐射图像等诊断结果.利用相应的诊断结果,定义了内爆时间,对内爆过程的主要阶段进行了划分,研究了等离子体位形、辐射强度分布等实验现象,同时对等离子体的内爆轨迹、内爆质量、径向收缩比、磁流体不稳定性等进行了初步分析. 关键词： Z箍缩')" href="#">喷气负载Z箍缩 等离子体内爆 X光辐射功率 “阳”加速器     

丝阵Z箍缩等离子体内爆过程单丝特性研究

研究了丝阵Z箍缩等离子体内爆过程中单丝行为、物理参数匹配、X射线发射情况。根据丝阵Z箍缩等离子体动力学一维模型研制了相关的计算程序，对单丝的内爆过程进行了数值模拟，对丝阵箍缩匹配关系进行了计算，给出了丝阵初始半径、电流脉冲宽度和峰值电流的匹配关系，同时对丝阵内的最小丝间距、材料的选择等问题进行优化研究。     

预脉冲在毛细管快放电软x射线激光中的作用

在一台毛细管快放电软x射线激光实验装置上，在相同主脉冲条件下（电流峰值18—30kA，半周期80ns），通过观测放电产生的软x射线辐射，研究了该装置固有的高幅值（2—5kA）和外加的低幅值（10—20A）两种预脉冲，对聚乙烯毛细管和高纯度陶瓷毛细管（99.9%）放电的管壁烧蚀及等离子体状态的影响.采用装置固有的几kA预脉冲和聚乙烯毛细管，放电 过程中产生了大量的管壁烧蚀，并且这种情况下的等离子体均匀性差，没有可能获得激光输 出.而采用20A的预脉冲和高纯度陶瓷毛细管，管壁烧蚀量大大减少，预电离等离子体的均匀 性好，在这种情况下，实验上利用x射线二极管观测到了激光尖峰信号. 关键词： 预脉冲 毛细管放电 软x射线激光     

快Z箍缩钨丝阵内爆物理研究

 通过理论和实验研究了快Z箍缩电磁内爆动力学物理过程及其辐射特性，完成了1维和2维辐射磁流体动力学数值模拟程序。利用阳加速器、强光一号脉冲功率装置、S-300装置和Angara-5-1装置，开展了实验研究，发展了一系列观察Z箍缩等离子体辐射的诊断系统。研制了单层、双层钨丝阵及单层丝阵加聚氘乙烯芯等负载。重点研究了能量耦合和内爆动力学规律。     

喷气Z箍缩内爆动力学过程的数值模拟研究

在分析了喷气Z箍缩内爆等离子体物理过程的基础上，作了必要的假定和简化，给出了物理模型和相应的数学方程组.研制了一维三温辐射磁流体动力学的数值模拟程序，对氖喷气Z箍缩内爆产生高温高密度等离子体过程进行了总体数值模拟，得到了等离子体各参量在内爆过程中的时空分布，再现了该内爆动力学整体过程，并与GAMBLE-Ⅱ装置的实验结果进行了比较.计算结果表明，在对热传导系数和等离子体电阻率作适当调整后，得到的计算结果是自洽的，其中内爆到心时刻、x射线辐射脉冲的脉宽和总能量等宏观量与实验结果比较接近.同时对喷气Z箍缩内爆过 关键词： 喷气Z箍缩 x射线辐射 辐射磁流体动力学     

Z箍缩丝阵负载参数的优化设计

 以俄罗斯S-300 Z-pinch 装置的负载电流波形为基准，利用Z箍缩的质点模型对钨丝阵负载的初始半径和线质量进行了系统的优化计算，得到了不同电流幅值的电流波形所对应的优化丝阵负载参数。发现了负载最大内爆动能与负载电流幅值的平方成正比关系。电流上升时间对最优丝阵负载参数的影响的计算表明，随着负载电流上升时间的增大，负载的最优线质量也要增大。     

扩散方程计算方法研究进展

描述多维内爆动力学过程的非平衡辐射流体力学问题包括电子、离子、光子（三温）热传导或辐射多群扩散等,它们具有多介质、大变形、高温、高压与强非均匀性等特点,其方程组具有强间断、强耦合和强非线性等特征。现有的九点格式和多点通量逼近方法（MPFA）在任意四边形网格上物理量计算出负,且九点格式中节点值计算不准确。全隐Picard迭代方法仅具有一阶收敛速度;     

电流脉冲前沿对电磁驱动固体套筒内爆的影响

固体套筒内爆是采用实验方法研究高能量密度状态下的材料力学性能的重要加载手段之一,国内已经建立起若干开展电磁内爆研究的驱动器。从电流脉冲前沿对固体套筒内爆性能影响的角度进行分析,为如何选择现有的实验装置开展固体套筒内爆实验研究提供依据。采用不可压缩零维模型进行计算,获得了套筒内爆速度受套筒尺寸、电流幅值以及电流脉冲前沿的影响情况。计算结果表明,开展固体套筒内爆的实验研究应选择电流脉冲前沿大于2 s的装置,这也为未来设计驱动能力更强的固体套筒内爆实验装置奠定了基础。     

用马赫贞德干涉仪测量喷气式Z箍缩等离子体密度

 为了研究喷气式Z箍缩（gas-puff Z-pinch）等离子体的内爆特性，研制了一套马赫-贞德干涉系统，并在小型喷气式Z箍缩装置(充电电压23kV,放电峰值电流210kA)上进行了试验，获得了清晰的干涉图像。根据干涉图上条纹的移动数目，计算得到该装置内爆早期等离子体的平均电子密度为10¹⁷~10¹⁸/cm³。     

磁场引导双电子束传输模拟和实验研究

 利用外加纵向磁场把单台加速器驱动双阴极二极管产生的同步双电子束引出双漂移管,是双电子束实用化的关键环节。在实心束情况下,对双电子束约束磁场进行了3维PIC模拟。在粒子模拟的基础上搭建了双电子束磁场引导系统,进行了磁场引导环形双电子束传输实验研究,在二极管电压约380 kV时,环形双束流值分别为5.10 kA和4.92 kA。实验结果表明,所设计磁场系统能够对环形双电子束进行有效约束,有效约束磁场约0.5 T。     

Effect of Electrical Pulses on the Mechanical Behavior of Single Crystals of Nickel-Based CMSX-4 Superalloy and the Mobility of Low-Angle Grain Boundary in Aluminum Bicrystals

The electroplastic effect is studied on mechanically loaded single crystals of nickel-based CMSX-4 superalloy and pure aluminum bicrystals. Both objects of study exhibit elevated plasticity under electrical pulses. Traces of the electroplastic deformation that occurs in CMSX-4 single crystals at current densities J higher than 3 kA mm^?2 and aluminum bicrystals at J exceeding 1.6 kA mm^?2 are analyzed using a scanning electron microscope.     

半导体开关单次超限工作研究

对半导体开关在这种超限条件下的单次使用情况进行了研究,尤其对级联状态多次试验。试验结果显示,额定电流为30mA的半导体开关可以实现单次放电电流达到10kA的稳定放电。通过对放电过程进行分析发现,开关从导通至最终损坏经过了一个比较复杂的物理过程,电路拓扑结构及其开关安装位置都将会对输出性能产生影响。     

铜基碳纳米管薄膜的制备及其强流脉冲发射特性研究

为了研究碳纳米管薄膜的强流脉冲发射特性, 采用酞菁铁高温热解方法在机械抛光铜基底上直接生长了碳纳米管薄膜 (Cu-CNTs), Cu-CNTs生长方向各异. 在20 GW脉冲功率源系统中采用二极结构对Cu-CNTs的强流脉冲发射特性进行研究, 研究结果表明: 在单脉冲发射条件下, 随脉冲电场峰值的增大, Cu-CNTs薄膜的发射电流峰值呈线性增加, 当宏观场强为15.5 V/μ时, 发射脉冲电流的峰值可达到5.56 kA, 对应的发射电流密度0.283 kA/cm², 当宏观场强达到32.0 V/μ时, 发射脉冲电流的峰值可达到18.19 kA, 对应的发射电流密度0.927 kA/cm², 发射电流能力明显优于已有报道. 在相同峰值, 连续多脉冲情况下, 碳纳米管薄膜具有良好的发射可重复性, 且发射性能稳定. 关键词： 强流脉冲发射 碳纳米管 铜基底 稳定性     

Feasibility of a High Average Power Crossed Field Closing Switch

Results of an experimentalprogram to determine the feasibility of using a crossed field device as a high average power triggered closing switch are reported. The tube contained coaxial, cylindrical electrodes and was triggered by pulsing a magnetic field (<0.1 T) to a value sufficiently high to trap electrons and initiate conduction. Holdoff voltages up to 60 kV were achieved, with peak (circuit limited) currents as high as 20 kA and pulse durations in the range of 1 to 100 ?s. Ignition jitter was ~0.1 ?s, and the voltage recovery rate was 2 kV/?s after 20 kA conduction and a 50 ?s deionization time. These single and double shot data indicate that it should be possible to build such a device to operate at high average power levels for use in high power (MW) modulators.     

基于反向开关晶体管的重复频率脉冲电流源

 介绍一种基于新型大功率半导体反向导通型双晶复合晶体管(RSD)开关的重复频率脉冲电流源。重复频率脉冲源主要包括半导体RSD开关、快速可控硅和磁开关等元件。初步实验产生的脉冲峰值电流约6.2 kA，脉冲宽度约10 μs，电流上升率可达18 kA/μs，工作电压约1 kV，可工作于单次和重复频率1，10和100 Hz等状态。     

Observation of tungsten particles in vacuum arcs by laser inducedfluorescence

We have clarified the relation between the decay of tungsten ion density in the vicinity of current zero and vacuum arc mode in high current period by using a laser induced fluorescence method in tungsten vacuum arcs of 60 Hz sinusoidal current with the peak value of 3.3, 6.7, and 9.8 kA. In the case of 6.7 kA, the arc mode was the anode spot mode. Because of the generation of the anode spot, the tungsten ion density near the anode was higher than near the cathode and the density near the anode was about ten times as high as the case of 3.3 kA which was the diffuse mode. In the case of 9.8 kA, which was the intense arc mode, the density near the anode was not significantly different from the case of 6.7 kA. The density near the cathode was higher than near the anode and tungsten ions were observed till about 30 μs after current zero while they disappeared at current zero in the other cases     

Spectroscopic Approach to the Analysis of High Current Arcs in SF6

Spectroscopic observations were carried out on transient free-burning arcs drawn by separating copper/tungsten electrodes in SF6 gas. The peak value of the arc current was varied up to 60 kA. A new optical method was developed to measure temperature and pressure profiles of the arc taking the magnetic pinch force into account. The arc voltage calculated from the obtained temperature and pressure profiles agreed well with electrical measurements. The results made it clear that the composition of the arc changes significantly at the critical instantaneous current of 10 kA. Above 10 kA the arc is composed of the electrode vapor, while it contains SF6 gas below 10 kA.     

Time Dependence of Anode Spot Formation Threshold Current in Vacuum Arcs

The variation of threshold current for the transition between the low current quiescent vacuum arc mode, and the high voltage noisy mode associated with anode spot formation, was measured as a function of peak current, current waveform frequency, and electrode separation on fixed diameter (25 mm) Cu and Ni electrodes. At current waveform frequencies of about 60 Hz on Cu electrodes, the threshold current depends mainly on electrode spacing, as has been observed by other investigators. However, at higher waveform frequencies, the threshold current becomes a strong function of peak current as well. At 347 Hz on 25 mm. diam. Cu electrodes separated by 10 mm, the threshold current rose from approximately 2 kA to 5.5 kA, as the peak current rose from 2 kA to 6 kA. At 543 Hz on 25 mm diam Ni electrodes separated by 9 mm, a saturation in threshold current at about 7.5 kA was observed for peak currents greater than 9 kA. Simultaneous anode temperature measurements indicated that the Ni anode surface temperature immediately prior to transition rose from about 1550° K to 2250° K with variations of peak current from 5 kA to 13 kA. Predictions of the variation of threshold current based on random transitions, and on cathode spot migration over the edge of the cathode, are compared with the experimental data.     

Magnetic and transport properties of Cu2MnAl Heusler alloy prepared by rapidly quenched method

The Cu₂MnAl alloy was prepared by rapidly quenched (suction-casting and melt-spinning) methods with various thicknesses of 20, 40 and 1000 μm. The X-ray diffraction (XRD) patterns of the fabricated samples show a single phase of Cu₂MnAl. All the samples reveal soft magnetic behavior with coercivity below 1.6 kA/m and Curie temperature of about 600 K. Resistance of the alloy behaves as a linear function of applied magnetic field. Magnetoresistance (MR) ratio depends on the thickness of the samples and achieves ∼0.8% at the field of 240 kA/m for the sample with thickness of 20 μm. The variation of the properties of the alloy can be interpreted by the difference of energy band structure caused by defects in the alloy.