甘氨酸吸附对Ni-Cu合金(110)表面偏析的影响

通过构造无序二元合金NixCu1-x(x=0.4)(110)表面的原子集团模型用来研究表面偏析. 根据这个模型，按覆盖度μ=0.33，应用Recursion方法计算了甘氨酸在NixCu1-x无序二元合金(110)表面吸附的电子结构. 结果表明，Ni0:4Cu0:6合金表面存在着Cu的偏析，甘氨酸的吸附抑制了Cu在表面的偏析，并使得合金表面的态密度在费米能级附近发生了很大变化，吸附时合金表面与甘氨酸之间发生了电荷转移.     

无序二元合金(Ni_xCu_(1-x))表面CO吸附及对表面偏析的影响

根据计算机编程构造出了存在和不存在表面偏析的无序二元合金NixCu1 -x(x =0 4 )的原子集团模型 ,然后按覆盖度θ=0 5 ,构造出了CO表面吸附的模型 ,应用Recursion方法计算了CO在NixCu1 -x(存在偏析和不存在偏析时 )合金表面不同位置 (顶位和芯位 )吸附的电子结构 .由此得出 :1 )CO在顶位吸附时较稳定 ;2 )CO吸附使合金表面态密度峰降低 ,带宽加宽 ,使d轨道的局域性变弱 ;3)CO的吸附抑制了Cu在表面富集 ,从电子层次上解释了CO吸附于NixCu1 -x对合金表面偏析的影响机理     

无序二元合金（NixCu1－x）不同解理面上O吸附对Cu偏析的影响

应用计算机编程构造出了存在和不存在表面偏析的无序二元合金Ni_xCu_1-x (x=0.4)(１００)表面及(１１０)表面的原子集团模型，然后按覆盖度θ=0.5，构造 出了O吸附后的原子集团模型，应用Recursion方法计算了O在Ni_xCu_{1-x(存在偏析和不存在偏析时)无序二元合金(１００)和(１１０)表面吸附的电子结构.由此 得出：1)O吸附使合金表面态密度峰降低，带宽加宽，并且表面Ni原子的d电子与吸附质O原 子的s，p电子的共价作用比Cu更强烈；2)O吸附在NixCu1-x(x=0.4) (１１０)表面比(１００)表面更稳定；3)O的吸附抑制了Cu在表面富集，且这种作用主要表 现在表面一层. 关键词： 化学吸附 表面偏析 Recursion方法 态密度}     

杂质对吸附系统O/RhxPt1-x衬底、合金(110)表面偏析的影响

构造了考虑吸附与偏析相互作用情况下无序二元合金Rhx Pt1-x(110)吸附氧表面的原子集团模型,其中O的覆盖度为0.5;构造了考虑杂质Ni,Cu,W对合金可能产生影响的吸附表面原子集团模型,杂质的掺入采用替位式.应用recursion方法计算了合金表面的环境敏感镶嵌能和电子结构.环境敏感镶嵌能计算表明杂质Ni,Cu和W均使O吸附RhxPt1-x(110)合金表面偏析情况发生逆转,Ni对Rh-Pt合金偏析的影响最大,其次是Cu,W对合金偏析的影响最小;电子结构计算表明杂质Ni,Ca W存在于合金表面时,使Rh与O的共价相互作用减弱,使表面偏析发生逆转,Pt再次偏析于表面.     

杂质对吸附系统O/RhxPt1-x衬底合金(110)表面偏析的影响

构造了考虑吸附与偏析相互作用情况下无序二元合金Rh_xPt_1-x(110)吸附氧表面的原子集团模型,其中O的覆盖度为0.5;构造了考虑杂质Ni,Cu,W对合金可能产生影响的吸附表面原子集团模型,杂质的掺入采用替位式.应用recursion方法计算了合金表面的环境敏感镶嵌能和电子结构.环境敏感镶嵌能计算表明杂质Ni,Ｃu和Ｗ均使O吸附Rh_xPt_1-x(110)合金表面 关键词： 化学吸附 表面偏析 recursion方法 态密度     

无序二元合金（NixCu1-x）表面CO吸附及对表面偏析的影响

根据计算机编程构造出了存在和不存在表面偏析的无序二元合金Ni_xCu_1-x（x=0.4）的原子集团模型，然后按覆盖度θ=0.5，构造出了CO表面吸附的模型 ，应用Recursion方法计算了CO在（Ni_xCu_1-x）（存在偏析和不存在偏析时）合金表面不同位置（顶位和芯位）吸附的电子结构 .由此得出：1)CO在顶位吸附时较稳定；2)CO吸附使合金表面态密度峰降低，带宽加宽，使d轨道的局域性变弱；3)CO的吸附抑制了Cu 关键词： 化学吸附 表面偏析 Recursion方法 态密度     

CO和O在无序二元合金NiCu表面上的化学吸附

本文用一维紧束缚模型和单电子化学吸附理论,在平均T矩阵近似下,研究了CO和O在无序二元合金Ni_xCu_1-x表面上的化学吸附特性,结果表明,CO和O在Ni_xCu_1-x表面上的化学吸附具有类似的性质,随合金中Ni浓度的增加,化学吸附能降低,化学吸附加强,Cu在NiCu合金表面的偏析在一定程度上减弱了CO和O在NiCu表面上的吸附。 关键词：     

NO在Cu(110)表面吸附的角分辨光电子能谱

本文用角分辨光电子能谱(ARUPS)(He Ⅱ),低能电子衍射(LEED)和俄歇电子能谱AES等方法研究了NO在Cu(110)表面吸附的光电子能谱。测量结果表明:在150K左右,NO在Cu(11O)表面是一个比较复杂的分解吸附过程。随着暴露量的不同,在Cu(110)表面形成的分解吸附分子是不同的。在NO5L暴露量时,主要形成O原子和N₂O分子吸附。吸附的LEED图形仍然是(1×1)。 关键词：     

BTA在铜表面吸附的密度泛函理论研究

本文基于密度泛函理论(DFT)的第一性原理研究了苯并三氮唑(BTA)分子吸附于铜表面的反应活性特征及其吸附在三种不同取向晶面时的电荷转移以及成键情况,结果表明：BTA分子的亲电和亲核活性中心为N(1)、N(2)和C(5),在铜表面垂直吸附时为化学吸附,Cu原子的最外层价电子转移到N(2)原子上,两者形成配位键;BTA分子在三种不同取向的铜表面吸附时的吸附能大小为：Cu(110)_x>Cu(100)_x>Cu(111)_x(x=T、B、H),T表示顶位,B表示桥位,H表示空位;BTA吸附在Cu(111)面的转移电荷量：T(顶位)>B(桥位)>H(空位).     

利用原子集团多重散射理论决定HCOO-Cu(110)的结构

利用原子集团多重散射理论计算甲酸在Cu(110)表面催化分解中间产物HCOO(formate)的O原子K边X射线吸收精细结构谱,证实formate吸附在Cu(110)表面长方元胞的短桥位,求得C—O键长等于1.26±0.01?,Cu—O键长为1.975±0.02?,O—C—O键角处于130°—134°范围内。上述结果与光电子衍射谱的分析结论一致。 关键词：     

Manipulation of Cu adatoms on anisotropic Cu surfaces using scanning tunneling microscopy

The physical origin of tip-induced motion of Cu adatoms on anisotropic Cu surfaces is investigated by means of total energy calculations which are based on three different semi-empirical potentials. The calculations show that for certain tip–adatom distances the activation barrier for the adatom to move towards the tip disappears completely, whereas the barrier in the opposite direction increases and the adatom experiences an attractive force towards the tip. The general trends do not depend on the shape and chemical nature of the tip, but quantitatively there appear differences.     

Formation and diffusion of S-decorated Cu clusters on Cu(111)

S-decorated Cu trimers are a likely agent of S-enhanced Cu transport between islands on Cu(111). According to ab initio calculations, excellent S bonding to trimer-Cu dangling valence results in an ad- Cu(3)S(3) formation energy of only approximately 0.28 eV, compared to 0.79 eV for a self-adsorbed Cu atom, and a diffusion barrier < or =0. 35 eV.     

Investigation of agglomerated Cu seed on Cu oxidation after chemical mechanical planarization

After chemical mechanical planarization (CMP), the reason which caused the formation of Cu-oxide defects at the interface between Cu deposit and TaN barrier layer has been studied. The experimental results of atomic force microscopy, secondary ion mass spectroscopy, X-ray diffraction demonstrated that the agglomeration phenomenon was found on Cu seed in the thickness of only 10 nm, thus resulting in the electrodeposited Cu film with more abundant C impurities at Cu/TaN interface and lower (1 1 1)/(2 0 0) ratio compared to the thick one (30 nm). Therefore it caused the Cu deposit with poor corrosion resistance and then the Cu-oxide defects were easily formed after CMP. As a result, the correlation between Cu-oxide defects at the Cu/TaN interface and the agglomeration on Cu seed layer was proposed herein.     

Quantum confinement in monatomic Cu chains on Cu(111)

The existence of one-dimensional (1D) electronic states in Cu/Cu(111) chains assembled by atomic manipulation is revealed by low-temperature scanning tunneling spectroscopy and density functional theory (DFT) calculations. Our experimental analysis of the chain-localized electron dynamics shows that the dispersion is fully described within a 1D tight-binding approach. DFT calculations confirm the confinement of unoccupied states to the chain in the relevant energy range, along with a significant extension of these states into the vacuum region.     

纳米铜团簇扩散性质研究

本文通过分子动力学模拟研究了纳米铜团簇的自扩散性质,结果表明Nc8949铜团簇自扩散系数随温度的升高而增大,在温度为1000 K时纳米铜团簇的扩散系数随团簇半径的倒数基本呈线性增加.同时指出在常温下团簇几乎无扩散行为,而某些文献中关于常温下晶粒扩散分子动力学模拟结果是模拟体系宏观转动造成的虚假现象.?     

表面Cu原子间相互作用对Cu(001)表面跳跃扩散行为的影响

采用嵌入原子方法的原子间相互作用势，利用准静态分子动力学模拟研究了Cu原子在Cu(001)表面吸附所导致的基体晶格畸变以及对其附近的另一个吸附原子自扩散行为的影响.研究结果表明，吸附原子的存在可以导致多达10层的Cu基体晶格产生畸变.两个吸附原子所产生的晶格畸变应力场之间的相互作用，可以导致吸附原子运动活性的增加.通过比较同一路径上往返跳跃扩散势垒的差异发现，在原子间相互作用势的有效距离之外，两个吸附原子的扩散行为可以认为是存在晶格畸变应力场相互作用的两个独立吸附原子的扩散；在原子间相互作用势的有效距离之 关键词： 表面吸附原子 晶格畸变 表面二聚体 扩散     

Electronic structures of halogen-doped Cu20 based on DFT calculationsElectronic structures of halogen-doped Cu20 based on DFT calculationsElectronic structures of halogen-doped Cu20 based on DFT calculations

In order to construct p-n homojunction of Cu20-based thin film solar cells that may increase its conversion efficiency, to synthesize n-type Cu20 with high conductivity is extremely crucial, and considered as a challenge in the near future. The doping effects of halogen on electronic structure of Cu20 have been investigated by density function theory calculations in the present work. Halogen dopants form donor levels below the bottom of conduction band through gaining or losing electrons, suggesting that halogen doping could make Cu20 have n-type conductivity. The lattice distortion, the impurity formation energy, the position, and the band width of donor level of Cu201-xHx （H = F, C1, Br, I） increase with the halogen atomic number. Based on the calculated results, chlorine doping is an effective n-type dopant for Cu20, owing to the lower impurity formation energy and suitable donor level.     

Scattering by Cu adatoms between image-potential bands on Cu(001)

With the increasing resolution and sensitivity of photoelectron spectroscopy, the influence of defects is becoming more and more obvious. Scattering processes induced by adsorbate atoms can be studied by time- and angle-resolved two-photon photoemission. We have examined the dynamics of electrons in image-potential states on the Cu(001) surface for statistically distributed Cu adatoms and have identified different scattering mechanisms. Scattering of electrons from the second (n=2) to the bottom of the first (n=1) image-potential band is observed, which we attribute to inelastic interband scattering with electrons in the bulk. At energies above the bottom of the n=2 band, resonant interband scattering from the n=2 to the n=1 image-potential band is found. The rate for these processes can be determined by modeling the time-resolved measurements via optical Bloch equations of a four-level system. Comparison of the transition and decay rates reveals that the decay rate of the n=2 electrons is almost exclusively changed by additional resonant interband-scattering processes upon adsorption. PACS 73.20.At; 79.60.Ht; 68.49.Jk     

Atomic adsorption of oxygen on Cu(111) and Cu(110)

We have studied angle-resolved inverse photoemission ( = 9.7 eV) after room temperature adsorption of oxygen on Cu(111) and Cu(110). On Cu(111) exposure to 500 L induces a band (3.0 eV aboveE _F at) which shows clear dispersion (1.0 eV) to higher energies for off normal incidence. Since no LEED superstructure is seen for that system, our results present strong evidence for the presence of short-range surface order. Two adsorbate bands are identified (2.8 eV and 6.3 eV at) on Cu(110)p(2×1)-O. Our results are in good agreement with a long-bridge adsorption site.