Synthesis and Structure of a New Ruthenium(II) Clathrochelate and the Use of a Highly Porous Ceramic Material with an Immobilized Complex in the Oxidative Conversion of Methane

Kinetics and Catalysis - A new ruthenium(II) cage complex with polar terminal groups in the apical substituents has been synthesized; the molecular design of the complex contributes to the...     

Effect of Irradiation Absorbed Dose and Organic Solvent on the Grafting Rate of PVDF-g-PHEMA through Gamma-ray Irradiation in a Homogenous Solution

High Energy Chemistry - Modification of Polyvinylidene fluoride (PVDF) by radiation grafting is a research hotspot in recent years. In this study, the monomer 2-Hydroxyethyl methacrylate (HEMA) was...     

Nonlinear Optical Properties of Novel Metallophthalocyanines

Journal of Applied Spectroscopy - Detailed measurements of nonlinear optical properties and optical limiting for four phthalocyanine (Pc) derivatives (PcCo, PcCu, PcMn, and PcSi) are reported. The...     

On Almost Interval Preserving Linear Operators

Siberian Mathematical Journal - A lattice homomorphism between quasi-Banach lattices is known to be compact if and only if it is a sum of a series of rank one lattice...     

Electron Energy-Loss Spectroscopy Study of the Change in the Free-Electron Density in Thin Superconducting NbN Films under Ion-Beam Irradiation

The change in the free-electron density in ultrathin (5 nm) superconducting NbN films in the initial state and after irradiation by O⁺ ions to doses of (0.1–0.9) × 10¹⁷ cm^–2 has been studied by electron energy-loss spectroscopy (EELS). The analysis has been performed on cross section samples prepared by the focused ion beam method, using plasmon oscillations with energies up to 50 eV. The radiation-induced replacement of nitrogen atoms with oxygen atoms in niobium nitride is found to change the electrical properties of the material, which leads to a decrease in the free-electron density with an increase in the irradiation dose.     

Full counting statistics of transport electrons through a two-level quantum dot with spin–orbit coupling

We study the full counting statistics of transport electrons through a semiconductor two-level quantum dot with Rashba spin–orbit (SO) coupling, which acts as a nonabelian gauge field and thus induces the electron transition between two levels along with the spin flip. By means of the quantum master equation approach, shot noise and skewness are obtained at finite temperature with two-body Coulomb interaction. We particularly demonstrate the crucial effect of SO coupling on the super-Poissonian fluctuation of transport electrons, in terms of which the SO coupling can be probed by the zero-frequency cumulants. While the charge currents are not sensitive to the SO coupling.