In2O3晶体电子结构和光吸收机理研究

为了得到准确的In₂O₃晶体电子结构, 本文分别采用GGA, GGA+U, HSE06的方法计算了电子结构, 并进行了G₀W₀修正, 通过比较计算结果, 得到HSE06+G₀W₀方法计算得到的禁带宽带最接近实验结果. 在此基础上使用Hedin的G₀W₀近似方法和Bethe-Salpeter方程计算得到了In₂O₃晶体的光学性质, 计算结果与实验结果吻合很好, 在此基础上通过对准粒子能带结构、光学跃迁矩阵和光学吸收谱的分析, 给出了In₂O₃晶体的光学跃迁机理.     

50—5000 eV电子被C4H8O,C5H10O2, C6H5CH3和C4H8O2散射的总截面

使用电子被C, H和O原子散射总截面的实验数据, 利用修正后的可加性规则计算了能量为50—5000eV的电子被4个复杂大分子C₄H₈O, C₅H₁₀O₂, C₆H₅CH₃和C₄H₈O₂散射的总截面, 并将计算结果与实验结果及其他理论计算结果进行了比较. 结果表明, 即 关键词： 电子散射 可加性规则 总截面 几何屏蔽效应     

中低速C3+与He，Ne，Ar原子相互作用过程中单电子转移绝对截面的测量

实验测量了1.7v₀—4.2v₀(v₀为玻尔速度,v₀=2.19×10⁸cm/s)的C³⁺与He,Ne,Ar原子碰撞过程中单电子转移绝对截面.将实验结果与多体经典轨道蒙特卡罗模拟计算结果做了比较,发现测量结果与多体经典轨道蒙特卡罗模拟计算结果在趋势上相符.当入射离子速度在1.7v₀—2 关键词： 离子-原子碰撞 单电子转移 绝对截面     

相互作用能量参数对A(B1/21B1/22)O3系统有序畴形成的影响

本文利用有序-无序相变理论讨论了A(B_1/2¹B_1/2²)O₃系统中的有序-无序相变,半定量地研究了在A(B_1/2¹B_1/2²)O₃系统中相互作用能参数对形成B¹:B²=1:1有序畴的影响,理论计算结果与实验结果基本一致。 关键词：     

中速C3+与Ne原子靶相互作用过程中单电子转移绝对截面的测量

实验测量了2.2v₀—4.2v₀(v₀为玻尔速度,v₀=2.19×10⁸cm/s)的C³⁺与Ne原子碰撞过程中单电子转移绝对截面.将实验结果与多体经典轨道蒙特卡罗模拟计算结果进行了比较.用电离能的变化、屏蔽效应、动态关联对实验和理论计算结果间的数值差异做了分析.总体上,实验结果与多体经典轨道蒙特卡罗方法计算结果在趋势上相 关键词： 离子-原子碰撞 单电子转移 绝对截面     

质子滴线核12N在28Si靶上的核反应总截面测量

描述了50.4MeV/u的¹²N和42.3MeV/u的¹³N次级放射性束在²⁸Si靶上引起的核反应总截面σ_r实验研究,结果发现¹²N的反应总截面σ_r比其相邻同位素核¹³N有着异常的增大.这可能是核形变及核子对效应造成的,试验中的测量误差也不可忽视.利用微观Glauber模型计算了¹²N在²⁸Si靶上的核反应总截面,并与实验结果做了比较,发现理论计算与实验结果拟合较好 关键词： 质子晕 反应截面     

Ta对C—15相V2Hf和V2(Zr0.5Hf0.5)系列声子性能的影响

本文用中子飞行时间方法对C-15相的超导材料V₂Hf,V₂Ta和V₂Hf_0.8Ta_0.2以及V₂Zr_0.5。Hf_0.5和V₂Zr_0.5Hf_0.33Ta_0.17的热中子非弹性散射谱作了测量,并计算出相对的广义声子态密度。结果与早先发表的Nb对C-15相V₂Zr和V₂(Hf_0.5Zr_0.5)系列声子性能的影响一致:声子频率随超导转变温度T_c增加而软化,随T_c减小而硬化。这表明,对于此类材料弹性软化在一定程度上对提高T_c起了作用。结果还进一步表明V₂Zr或V₂Hf与V₂(Zr_0.5Hf_0.5)之间有着质的差别,V₂Hf加Ta后,T_c增加,声子频率软化,而V₂(Zr_0.5Hf_0.5)加Ta后,T_c减小,声子频率则略有硬化。这与V₂Zr和V₂(Hf_0.5Zr_0.5)加Nb的结果是一致的。此结果可以用角动量分波表象的能带论方法分析电-声耦合相互作用得出的杂化理论来定性解释。 关键词：     

应用特雷纳法和吉尔法求解脱硫脱硝中化学反应动力学方程

应用特雷纳法和吉尔法求解脱硫脱硝中一类化学反应动力学方程,均得到了满意的结果.分别讨论了NO-NO₂-N₂,NO-NO₂-N₂-O₂和NO-NO₂-N₂-O₂-H₂O系统,指出了各种系统脱除NO_x的途径.同时,讨论了加入CO₂及SO₂后,脱除NO_x和SO₂的情况.     

线形脑啡肽(N-Tyr1-Gly2-Gly3-Phe4-Leu5)的NMR溶液构象研究

本文在Bruker AM-400 NMR谱仪上,在不同温度下研究了线形脑啡肽(N-Tyr¹-Gly²-Gly³-Phe⁴-Leu⁵)在DMSO中的NMR溶液构象。由NMR测试结果,得到了NH化学位移温度梯度系数、扭转角φ、χ'约束和¹H-¹H NOE距离约束,用目标函数法计算了脑啡肽的溶液构象,分析了优势边链构象。研究结果指明了多肽骨架的柔变性且处于构象平衡中。     

Nb XIII离子3d94s2, 3d94s4p, 3d94p2 组态能级结构与跃迁的理论研究

用准相对论Hartree-Fock方法对Nb XIII离子二电子激发组态3d⁹4s², 3d⁹4s4p, 3d⁹4p² 的能级结构做了全面系统的理论计算研究.在对已有研究结果分析的基础上, 运用最小二乘方法对径向积分参数进行了优化计算, 得到了与这些组态有关的电偶极允许跃迁的谱线波长和跃迁概率.计算结果与最新的实验值做了对比分析, 表明本文计算结果是准确的. 研究发现, 波长40.92 nm的谱线, 属于3d⁹4s(¹D)4p²F_7/2–3d⁹ (²D)4s^{2 2}D_5/2 的跃迁谱线, 而不属于3d⁹4s (¹D)4p⁴D_7/2–3d⁹(²D)4s^{2 2}D_5/2 的跃迁谱线, 即上谱项能级为²F_7/2, 而不是⁴D_7/2. 关键词： Nb XIII离子 二电子激发组态 谱线波长 跃迁概率     

Storage performance with different charged state of manganese spinel battery

The power battery was manufactured with the commercial LiMn₂O₄ and graphite, and its storage performances with different charged state were studied. Structure, morphology, and surface-state change of the LiMn₂O₄ before and after storage were observed by XRD, SEM, XPS, CV, and AC technique, respectively. The electrochemical performances of LiMn₂O₄ battery were tested. The result shows that the capacity recovery of LiMn₂O₄ stored at discharge state is best (99.2%). While that of full-charged state is worst (93.6%). The cyclic performance of LiMn₂O₄ battery after storage is improved. The cyclic performance of LiMn₂O₄ stored at full-charged state is best (capacity retention ratio of 89.8% after 200?cycles), while that of before storage is 83.0%. The crystal of the spinel was destroyed after storage, and the intensity of breakage is increased with charge state increasing. The amount of soluble Mn and Li-ion migration resistance (R _f) are increased with charge state increasing, and the oxygen loss is detected.     

Optical properties of new photovoltaic materials: AgCuO2 and Ag2Cu2O3

AgCuO₂ and Ag₂Cu₂O₃ are new types of semiconductor materials. A theoretical study is presented for both the electronic and optical properties of these new photovoltaic materials in the framework of density functional theory (DFT). The calculated cohesive energy is −3.606 eV/atom and −3.723 eV/atom for Ag₂Cu₂O₃ and AgCuO₂, respectively. Electronic calculations indicate that AgCuO₂ is a small band gap semiconductor and Ag₂Cu₂O₃ is metallic in nature. The valency state of Cu is divalent in Ag₂Cu₂O₃ and trivalent in AgCuO₂. The largest absorption coefficient of CuO₂ is 332 244, which is significantly greater than that of CuInSe₂, CdTe, GaAs, etc.     

包钴型γ-Fe2O3磁粉矫顽力的研究

包钴型γ-Fe₂O₃磁粉分为包钴γ-Fe₂O₃(简记为Co-γ-Fe₂O₃)和包钴包亚铁γ-Fe₂O₃(简记为CoFe-γ-Fe₂O₃)两种,它们的矫顽力可比γ-Fe₂O₃磁粉的提高100至400Oe左右,本工作对这两种磁粉矫顽力增大的原因作了探讨,认为它们矫顽力增大的机制不同:CO-γ-Fe₂O₃矫顽力增大是由于表面包覆一层Co(OH)₂使表面各向异性增大,而CoFe-γ-Fe₂O₃则是由于表面包覆的是钴铁氧体,γ-Fe₂O₃与钴铁氧体之间发生耦合作用,使矫顽力增大。     

钨磷酸盐非晶铜离子导体的结构与电性能

本文给出了当CuI含量为30mol%时CuI-Cu₂O-WO₃-P₂O₅系统的玻璃形成区。测量了样品的交流电导率,得出了电导率随WO₃含量变化规律。采用红外光谱、阻抗谱、径向分布函数(RDF)和扫描电子显微镜(SEM)等测试手段研究了该系统材料的结构,讨论了电学性能与结构的相互关系。 关键词：     

Magnetic anisotropy and magnetostriction in a Lu2Fe17 intermetallic single crystal

The magnetic anisotropy and magnetostriction of a Lu₂Fe₁₇ single crystal are investigated. The temperature dependence of the magnetic anisotropy constant K ₁ is measured in the range 4.2–300 K. The results obtained are compared with the data calculated using the Callen theoretical formula. It is found that the temperature dependence of K ₁ for the Lu₂Fe₁₇ single crystal deviates from the temperature curve predicted by the localized single-ion model. The inference is drawn that a certain contribution to the magnetic anisotropy of the Lu₂Fe₁₇ compound is made by the magnetic anisotropy of band electrons. The longitudinal, transverse, and volume magnetostrictions of the Lu₂Fe₁₇ single crystal are studied, and the magnetostriction constants are calculated. It is demonstrated that the exchange integral of Lu₂Fe₁₇, as for the Y₂Fe₁₇ compound, substantially depends on the atomic volume. This dependence is responsible for the considerable difference between the Curie temperatures of the Lu₂Fe₁₇ and Y₂Fe₁₇ compounds. It is revealed that the magnetostriction of the Lu₂Fe₁₇ single crystal in the temperature range of the magnetic phase transition is determined by the two-ion exchange and single-ion contributions.     

Crystallization of Ge2Sb2Te5 phase—change optical disk media

In this paper, the crystallization behaviour of amorphous Ge₂Sb₂Te₅ thin films is investigated using differential scanning calorimetry), x-ray diffraction and optical transmissivity measurements. It is indicated that only the amorphous phase to face-centred-cubic phase transformation occurs during laser annealing of the normal phase-change structure, which is a benefit for raising the phase-change optical disk's carrier-to-noise ratio (CNR). For amorphous Ge₂Sb₂Te₅ thin films, the crystallization temperature is about 200℃ and the melting temperature is 546.87℃. The activation energy for the crystallization, E_a, is 2.25eV. The crystallization dynamics for Ge₂Sb₂Te₅ thin films obeys the law of nucleation and growth reaction. The sputtered Ge₂Sb₂Te₅ films were initialized by an initializer unit. The initialization conditions have a great effect on the reflectivity contrast of the Ge₂Sb₂Te₅ phase-change optical disk.     

Response improvement for In2O3-TiO2 thick film gas sensors

In₂O₃ is introduced into TiO₂ by sol-gel method to improve the response/recovery rate and expand the operating temperature, when the In₂O₃-TiO₂ mixed system is exposed to H₂/O₂. The sensor is fabricated by thick film technology. Influence of In₂O₃ on the film phase composition, microstructure and sensing characteristics is discussed. Dynamic response properties show that the operating temperature of the mixed system is at 500-800 °C, which is about 600-800 °C for pure TiO₂. Response time of the sensor is about 200-260 ms (millisecond) while recovery time is in a narrow range of 60-280 ms at 600-800 °C. The promoting mechanism is suggested to arise from the introduction of In₂O₃ and grain size effect of the sensing film. Then In₂O₃-TiO₂ thick films are surface-modified by Pt using chloroplatinic acid. The promoting effect of Pt dispersed on the mixed system is also investigated.     

Preparation of nanowall Bi2S3 films by chemical bath deposition

Nanowall shaped Bi₂S₃ films were prepared by chemical bath deposition in which ammonium citrate and thioacetamide were used as chelating reagent and sulfur source, respectively. The nanowall Bi₂S₃ films show large-surface-area nanowall shaped morphology. It is found that the pH value (pH = 6 or pH = 6.5) of the solution is a crucial parameter to obtain the nanowall shaped Bi₂S₃ films. The composition of the nanowall Bi₂S₃ films is close to the stoichiometric ratio of Bi₂S₃. The absorption edge of the nanowall shaped Bi₂S₃ films is located at around 900 nm, indicating that the optical bandgap of the Bi₂S₃ films is around 1.4 eV. The nanowall Bi₂S₃ films show obvious photo-sensitivity. The photo-to-dark conductivity ratios of the nanowall Bi₂S₃ films prepared at pH = 6 and pH = 6.5 are all around 50. This value is around five times than that of the non-nanowall shaped Bi₂S₃ films which is prepared at pH = 7.     

Electronic structure and half-metallicity in Heusler alloys Fe2YB (Y=Ti, V, Mn, Cr)

The electronic structure and magnetic properties of B-based Heusler alloys Fe₂YB (Y=Ti, V, Cr and Mn) have been studied theoretically. These alloys are all ferrimagnets except for Fe₂VB. The latter has 24 valence electrons and is a paramagnetic semimetal. Fe₂CrB is predicted to be half-metals at equilibrium lattice constant. The spin polarization of Fe₂MnB is also quite high. The calculated total moments are 1.00 μ_B for Fe₂CrB and 2.04 μ_B for Fe₂MnB. In Fe₂CrB and Fe₂MnB, the total moments are mainly determined by the partial moment of Cr or Mn. The Fe moment is relatively small and antiparallel to that of Cr or Mn. Under uniform lattice distortion, the half-metallicity of Fe₂CrB is more stable than Fe₂MnB, which is related to the detailed DOS structure of them near E_F.     

磁泡石榴石外延膜磁参数漂移的起因和抑制方法

本文研究了磁泡石榴石外延膜磁参数漂移的起因和抑制方法。我们认为石榴石外延膜磁参数漂移的主要起因是过饱和熔体的非自发成核和长大,并利用熔体营养料的有效浓度R_eff=R₄-R_n-R_e予以解释。外延过程熔体营养料浓度的消耗是R_n+R_e,而且R_n比R_e对石榴石外延膜磁参数的影响大得多。在回温控制过程中R_n=0,其熔体是相对稳定的。衬底的搅拌可加速熔体的非自发成核和长大。 关键词：