Influence of Morphological Defects on Thermophysical Properties of γ-Gd<Subscript>2</Subscript>S<Subscript>3</Subscript>

The temperature dependences of the heat capacity (C _p ) and the thermal conductivity (κ) in the temperature range from 300 to 773 K of polycrystalline gadolinium sulfide samples (γ-GdS _y ) with the deviation of the composition from the integer stoichiometric were studied. It was found that the thermal conductivity of gadolinium sulfides decreases monotonically and reaches 0.74 W/(m K) at T = 773 K for the composition y = 1.479, which is much lower than for the known single-crystal samples. The influence of morphological defects (boundaries of crystallites and dislocations) on the intensity of scattering of phonons is studied. It has been established that ceramic samples of gadolinium sulphides have a large heat capacity and a lower thermal conductivity, in comparison with monocrystalline samples of the same composition.     

Plateau in the temperature dependence of the thermal conductivity of solid hydrogen containing heavy isotopic neon impurities at ultimately low concentrations

The thermal conductivity of solid hydrogen with 0.0001–0.0002 at. % Ne in the form of equilibrium samples grown at a low rate after remelting is investigated in the temperature range 1.5–10.0 K. It is demonstrated that the temperature dependence of the thermal conductivity for the samples containing neon at concentrations considerably lower than the limiting solubility of the heavy impurity exhibits a symmetric plateau. This behavior of the temperature dependence of the thermal conductivity differs qualitatively from the previously observed resonance minimum in the temperature dependence of the thermal conductivity for desublimated samples. A relaxation model is proposed for explaining the observed effect. According to this model, the plateau is explained by the formation of linear impurity structures that are located along dislocation lines and considerably enhance phonon scattering by dislocation cores. The density of linear impurity structures is estimated. The influence of these structures on the thermal conductivity is compared with the corresponding effect of uniformly distributed individual neon atoms in solid hydrogen.     

Low-temperature thermal conductivity of terbium-gallium garnet

Thermal conductivity of paramagnetic Tb₃Ga₅O₁₂ (TbGG) terbium-gallium garnet single crystals is investigated at temperatures from 0.4 to 300 K in magnetic fields up to 3.25 T. A minimum is observed in the temperature dependence κ(T) of thermal conductivity at T _min = 0.52 K. This and other singularities on the κ(T) dependence are associated with scattering of phonons from terbium ions. The thermal conductivity at T = 5.1 K strongly depends on the magnetic field direction relative to the crystallographic axes of the crystal. Experimental data are considered using the Debye theory of thermal conductivity taking into account resonance scattering of phonons from Tb³⁺ ions. Analysis of the temperature and field dependences of the thermal conductivity indicates the existence of a strong spin-phonon interaction in TbGG. The low-temperature behavior of the thermal conductivity (field and angular dependences) is mainly determined by resonance scattering of phonons at the first quasi-doublet of the electron spectrum of Tb³⁺ ion.     

The contribution of anion disorder to ionic conductivity on single crystals of β-PbF2

The effect of the different cooling processes on the disorder of flourine ions and ionic conductivity in β-PbF₂ has been studied by X-ray method and ionic conductivity measurements on single crystals below the transition temperature T_c. The spike-like diffuse scattering was observed along the <111>¹ directions around the Bragg reflections. The activation energies for the conduction process are 0.40 eV for the sample quenched from 970 K and 0.54 eV for the one from 720 K. The higher the quenching temperature is, the higher the conductivity and the lower the activation energy become. The dependence of conductivity on the different cooling processes is more evident in single crystals than in polycrystalline samples. The contribution of the different cooling processes to ionic conductivity can be quantitatively explained by the extent of ordering of mobile fluorine ions. Time dependence of ionic conductivity has not been observed.     

Effect of porosity on the thermoelectric efficiency of PbTe

The effect of electron and phonon scattering on nanometer-sized pores on the thermoelectric properties of lead telluride has been studied theoretically. Estimations show that the thermoelectric efficiency can increase by 20–25% at room temperature and by 5–10% at 600 K at the optimal pore size of several nanometers and the porosity of ~10%. An analysis shows that the increase in the thermoelectric efficiency due to additional scattering in the porous material is related to the decrease in the thermal conductivity of the lattice and the increase in the thermoelectric coefficient due to the change in the energy dependence of the relaxation time. To estimate the multiple scattering at high pore concentration, the lattice thermal conductivity by the molecular-dynamics method and the electron free paths in a coherent potential approximation were calculated. It is shown that the inclusion of the multiple scattering slightly influences the thermoelectric properties at noted sizes and pore concentrations.     

Thermal conductivity of (La0.25Pr0.75)0.7Ca0.3MnO3 under giant isotope effect conditions

The thermal conductivity of (La_0.25Pr_0.75)_0.7Ca_0.3MnO₃ manganite has been studied. The isotope substitution of ¹⁸O for ¹⁶O in this compound leads to a ferromagnetic-antiferromagnetic phase transition at low temperatures. It has been found that the thermal conductivity in the ferromagnetic state is approximately two times higher than in the antiferromagnetic state. It has been shown that the small value of thermal conductivity and its temperature dependence can be due to strong phonon scattering from crystal lattice defects, which are thought of as Jahn-Teller distortions. The parameters of this scattering can be determined within the Debye model of thermal conductivity from a comparison of samples differing in their isotope composition.     

Thermal conductivity of polycrystalline CVD diamond: Experiment and theory

The temperature dependences of thermal conductivity κ of polycrystalline CVD diamond are measured in the temperature range from 5 to 410 K. The diamond sample is annealed at temperatures sequentially increasing from 1550 to 1690°C to modify the properties of the intercrystallite contacts in it. As a result of annealing, the thermal conductivity decreases strongly at temperatures below 45 K, and its temperature dependence changes from approximately quadratic to cubic. At T > 45 K, the thermal conductivity remains almost unchanged upon annealing at temperatures up to 1650°C and decreases substantially at higher annealing temperatures. The experimental data are analyzed in terms of the Callaway theory of thermal conductivity [9], which takes into account the specific role of normal phonon-phonon scattering processes. The thermal conductivity is calculated with allowance for three-phonon scattering processes, the diffuse scattering by sample boundaries, the scattering by point and extended defects, the specular scattering by crystallite boundaries, and the scattering by intercrystallite contacts. A model that reproduces the main specific features of the thermal conductivity of CVD diamond is proposed. The phonon scattering by intercrystallite contacts plays a key role in this model.     

Peculiar aspects of galvonamagnetic properties of InS single crystals

The electrical conductivity and the Hall effect in electronic InS single crystals have been studied over a wide range of temperatures, from 150 K to 800 K, and their peculiarities have been elucidated. At temperatures of 200 K the Hall coefficient passes through a maximum but does not reach a minimum. The peculiarities of the temperature dependence of the Hall coefficient are explained within the two-band model, which incorporates the conduction band and the impurity band. The parameters of the impurity band have been determined. The hopping mechanism of scattering has been found to predominate in InS single crystals in the temperature range 150–270 K, and at temperatures of 270 K to 400 K the mobility is limited, mainly by scattering on impurity ions. Above 400 K electrons are scattered on polar lattice vibrations.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 29–34, January, 1989.     

Effect of C60 fullerene additions on the thermal conductivity of low-density polyethylene films

The thermal conductivity of LDPE + C₆₀ nanocomposites with a fullerene concentration up to 10 wt % is studied in the temperature range 20–80°C. This conductivity is found to nonlinearly decrease with increasing fullerene concentration. The decrease in the thermal conductivity of the composites is considered to be caused by a decrease in the phonon mean free path as a result of an increase in the number of scattering centers. The temperature dependence of the thermal conductivity is found to have a maximum.     

Peripheral phonons and phonon conductivity of a metal at low temperatures

The role of the peripheral and non-peripheral phonons in the estimation of the lattice thermal conductivity of a metal has been studied at low temperatures by calculating their separate contributions towards the total lattice thermal conductivity. The study is made in the temperature range 0.4–2.5 K with the help of the Ziman expression for the scattering of phonons by the charge carriers and the Callaway expression of the phonon conductivity, and Sb is taken as an example. The separate percentage contributions due to peripheral and non-peripheral phonons have also been studied and it is found that the percentage contribution due to peripheral phonons increases with increasing temperature while the percentage contribution due to non-peripheral phonons decreases with increasing temperature. The percentage contributions of the lattice thermal resistivities due to electrons and holes towards the total lattice thermal resistivity of Sb have also been reported in the present note.     

Band structure and scattering mechanisms in manganese monosilicide

The electrical and thermal conductivities, the thermal emf, and the Hall coefficient have been measured in manganese monosilicide at temperatures between 70 and 700 °K. Band parameters are calculated for MnSi on the basis of wide-band and narrow-band models. Scattering mechanisms for the current carriers and phonons are discussed; in particular, the anomalous temperature dependence of the thermal conductivity is attributed to the high efficiency for phonon scattering by conduction electrons.Translated from Izvestiya VUZ. Fizika, No. 12, pp. 108–112, December, 1969.     

Correlated charged impurity scattering in graphene

We study electron transport properties of graphene in the presence of correlated charged impurities via adsorption and thermal annealing of potassium atoms. For the same density of charged scattering centers, the sample mobility sensitively depends on temperature which sets the correlation length between the scatterers. The data are well-understood by a recent theory that allows us to quantitatively extract the temperature dependence of the correlation length. Impurity correlations also offer a self-consistent explanation to the puzzling sublinear carrier-density dependence of conductivity commonly observed in monolayer graphene samples on substrates.     

Thermal conductivity of polycrystalline zinc selenide

The thermal conductivity of optically transparent zinc selenide polycrystals fabricated by vapor deposition was experimentally studied in the temperature range 80–400 K in the as-deposited state and after deformation along the crystal growth direction followed by recrystallization. In the low-temperature range, textured ZnSe samples exhibit anisotropy of the thermal conductivity, which also persisted after their deformation and recrystallization. The anisotropy of the thermal conductivity is caused by phonon scattering by dislocations oriented along the crystal growth direction. The thermal conductivity of ZnSe at T>270 K is shown to be limited by the scattering of acoustic phonons by optical phonons.     

Effect of normal processes on thermal conductivity of germanium,silicon and diamond

The effect of normal scattering processes is considered to redistribute the phonon momentum in (a) the same phonon branch — KK-S model and (b) between different phonon branches — KK-H model. Simplified thermal conductivity relations are used to estimate the thermal conductivity of germanium, silicon and diamond with natural isotopes and highly enriched isotopes. It is observed that the consideration of the normal scattering processes involving different phonon branches gives better results for the temperature dependence of the thermal conductivity of germanium, silicon and diamond with natural and highly enriched isotopes. Also, the estimation of the lattice thermal conductivity of germanium and silicon for these models with the consideration of quadratic form of frequency dependences of phonon wave vector leads to the conclusion that the splitting of longitudinal and transverse phonon modes, as suggested by Holland, is not an essential requirement to explain the entire temperature dependence of lattice thermal conductivity whereas KK-H model gives a better estimation of the thermal conductivity without the splitting of the acoustic phonon modes due to the dispersive nature of the phonon dispersion curves.      

Molecular-dynamics calculation of the thermal conductivity coefficient of the germanium single crystal

The thermal conductivity coefficient of the germanium crystal lattice has been calculated by molecular dynamics simulation. Calculations have been performed for both the perfect crystal lattice and the crystal lattice with defects such as monovacancies. For the perfect germanium single crystal, the dependence of the thermal conductivity coefficient on the lattice temperature has been obtained in the temperature range of 150–1000 K. The thermal conductivity coefficient of the germanium lattice has been calculated as a function of the monovacancy concentration.     

Effect of dispersion on the phonon focusing and anisotropy of thermal conductivity of silicon single crystals in the boundary scattering regime

The effect of dispersion on the focusing of thermal phonons and on the thermal conductivity of silicon single crystals in the boundary scattering regime has been investigated. Analysis of the spectra of acoustic modes obtained for silicon single crystals from inelastic neutron scattering data has demonstrated that, upon transition from long-wavelength phonons to short-wavelength phonons, the directions of their focusing change. With an increase in temperature, this leads to a change in the anisotropy of thermal conductivity of phonons with different polarizations and, consequently, to a change in the anisotropy of the total thermal conductivity. Analysis of the temperature dependence of the thermal conductivity has revealed that the presence of extended flattened sections in the spectrum of short-wavelength transverse phonons indicates anomalously low values of the group velocity and, accordingly, a significant decrease in the contribution from these phonons to the thermal conductivity with increasing temperature. The contribution from longitudinal phonons to the thermal conductivity also significantly increases even at temperatures higher than 110 K and becomes dominant.     

Investigation of the luminescence properties and thermal stability of dysprosium,terbium, and europium ions singly- and co-doped strontium yttrium borate phosphors

A series of trivalent rare-earth element ions (europium, terbium, dysprosium) singly- and co-doped strontium yttrium borate phosphors was synthesized via the sol–gel method. The phase formation, luminescence properties, decay times, and energy transfer behaviors from terbium ions to europium ions, the thermal stability, and the Commission Internationale de L’Eclairage coordinates were investigated. Under the excitation of ultraviolet light, the singly doped phosphors exhibited green emission of terbium ions, white emission of dysprosium ions, and red emission of europium ions, respectively. For the terbium and europium ions co-doped strontium yttrium borate samples, a white emission can be realized by blending the doping concentration of terbium and europium ions. The critical distance between terbium and europium ions has been calculated to be about 14.52?Å and the energy transfer from terbium to europium occurred through the dipole–quadrupole interaction. At 150°C, the emission intensity of terbium and europium in the 12?mol% terbium and 14?mol% europium co-doped strontium yttrium borate sample was maintained at about 74% and 87% of their corresponding initial values, respectively, and the dysprosium ions singly doped strontium yttrium borate sample showed about 70% of its initial emission intensity at room temperature. The above results suggested that europium, terbium, dysprosium ions singly- and co-doped strontium yttrium borate phosphors have potential applications as ultraviolet-convertible phosphors.     

Low temperature specific heat and thermal conductivity of bulk metallic glass (Cu50Zr50)94Al6

The low temperature specific heat and thermal conductivity of (Cu₅₀Zr₅₀)₉₄Al₆ bulk metallic glass have been studied experimentally. A low temperature anomaly in the specific heat is observed in this alloy. It is also found that in addition to Debye oscillators, the localized vibration modes whose vibration density of state has a Gaussian distribution should be considered to explain the low temperature phonon specific heat anomaly. The phonon thermal conductivity dependence on temperature for the sample does not show apparent plateau characteristics as other glass materials do; however, the influence of the resonant scattering from the localized modes on the lattice thermal conductivity is prominent in the bulk metallic glass at low temperatures.     

双能隙超导体MgB2的热导

测量了多晶MgB2的热导，实验温区为5—300K.在双能隙模型下，用基于BCS超导理论的BRT热导理论对实验结果进行了分析，给出MgB2中两个能隙大小分别为16和51meV.对电子热导的分析结果表明σ能带准粒子受到的杂质散射远小于π能带准粒子受到的杂质散射.与单晶MgB2的热导实验结果相比，多晶MgB2的声子热导结果表明在c方向上热传导声子受到来自σ能带准粒子的散射，显示了MgB2在能量输运上的各向异性. 关键词： MgB2 热导率 能隙     

Effects of mini-Umklapp processes on heat transport in superlattices

Superlattice Umklapp processes contribute to phonon-phonon scattering and limit the thermal conductivity of insulating superlattices. The temperature dependence of the thermal conductivity is predicted using Callaway's phenomenological relaxation time approximation.