应力退火Fe基纳米晶薄带横向磁各向异性的介观结构研究

用原子力显微镜(AFM)观测了不同张应力退火的Fe基纳米晶(Fe_73.5Cu₁Nb₃Si_13.5B₉)薄带横断面的形貌，并结合X射线衍射(XRD)图谱对不同张应力退火的Fe基纳米晶薄带的介观结构进行分析；测量了不同张应力退火Fe基纳米晶薄带的纵向驱动巨磁阻抗(LDGMI)曲线及横向磁各向异性场；认为张应力退火Fe基纳米晶薄带感生横向磁各向异性场的介观结构机理，是由于外加张应力退火产生由非晶相包裹着的α-Fe(Si)纳米晶粒(包裹晶粒)的横向优势团聚. 关键词： 应力退火 介观结构 AFM 团聚     

非晶态合金薄带与膜的巨磁电阻抗效应理论及计算

通过建立具有平面近横向各向异性场的非晶态合金薄带及膜的磁畴结构模型，利用线性化Maxwell方程组及Landau-Lifshitz方程，推出了在高频交变磁场及外加面内轴向直流磁场H_ex作用下的铁磁材料的与取向相关的磁导率表达式，得到了对方位角平均的相对磁导率及阻抗的计算式，导出了磁导率与张量磁化率分量间的关系，对材料磁导率的实部及虚部随H_ex的变化进行了计算，并给出了对应的磁谱图.建立的磁导率与外磁场的理论关系可将Panina及Kraus给出的理论结果统一起来. 关键词： 非晶态合金薄带及膜 取向相关磁导率 GMI效应理论与计算 近横向各向异性场     

铁基合金薄带多次等温回火特性的研究

Fe基合金薄带的磁性能对应力敏感,特别是退火过程应力感生磁各向异性是否可以用回火方法消除,是一个令人感兴趣的科学问题.本文采用同步辐射X射线衍射技术,观测Fe_(73.5)Cu1Nb_3Si_(13.5)B_9非晶薄带经外加394.7 MPa应力540℃保温30 min退火后,进行多次等温回火样品的微观结构,用SupereyesB011型显微摄像机记录样品应力退火和回火过程的宏观伸长量,并利用HP4294A型阻抗分析仪测量相应样品的磁各向异性.对实验数据进行曲线拟合后发现,虽然应力退火过程的残余应力引起的晶格各向异性是产生磁各向异性的主要原因,但不是唯一原因,在应力退火过程中非晶基底的蠕变引起的纳米晶晶粒定向团聚,也是应力退火感生磁各向异性的重要原因;而且,因应力退火过程中非晶基底的蠕变引起纳米晶晶粒定向团聚感生的磁各向异性无法用等温回火方法完全消除.     

各向异性场对三明治膜巨磁阻抗效应的影响

根据具有巨磁阻抗(GMI)效应的实际三明治样品的状况，提出三明治结构作为理论计算的模型，考虑了磁性层的各向异性场，利用一定边界条件下的Maxwell方程和Landau-Lifshitz方程对模型进行了理论计算，得到了阻抗与频率、各向异性场等因素间的函数关系.在此基础上，着重讨论了各向异性场H_k的作用.H_k的大小、方向均会对GMI效应造成影响，最佳的H_k应在400A/m左右，位于面内并与电流垂直.还证实了三明治结构中磁性层的磁致伸缩只会减弱G 关键词： 巨磁阻抗(GMI)效应 三明治膜 Maxwell方程 Landau-Lifshitz方程     

Tb0.3Dy0.7Fe2单晶中巨磁致伸缩的逆效应

研究了Terfenol-D材料中巨磁致伸缩的逆效应,即磁机械效应.基于Stoner-Wohlfarth(SW)模型,考虑磁晶各向异性和应力各向异性能,依据自由能极小原理,获得了退磁态下Terfenol-D单晶中磁化强度方向和压应力的关系.采用数值方法求解了平衡条件下的非线性方程组.理论结果表明,Terfenol-D巨磁致伸缩单晶中的磁各向异性取决于磁晶各向异性和应力各向异性之间的竞争.在压应力的作用下,Terfenol-D单晶中的磁各向异性由立方向单轴转变.理论和实验结果的比较表明,存在一个临界压应力,使磁致伸缩效应达到极大值.该理论结果还解释了压应力使得Terfenol-D单晶材料难于磁化和磁致伸缩效应出现极大值的实验事实.理论计算不仅为研究这类问题提供了一个更准确的方法,而且其结果也有助于理解类似材料中的磁化过程. 关键词： Terfenol-D 磁机械效应 巨磁致伸缩效应 磁各向异性     

Tb0.3Dy0.7Fe2单晶中巨磁致伸缩的逆效应

研究了Terfenol-D材料中巨磁致伸缩的逆效应,即磁机械效应.基于Stoner-Wohlfarth(SW)模型,考虑磁晶各向异性和应力各向异性能,依据自由能极小原理,获得了退磁态下Terfenol-D单晶中磁化强度方向和压应力的关系.采用数值方法求解了平衡条件下的非线性方程组.理论结果表明,Terfenol-D巨磁致伸缩单晶中的磁各向异性取决于磁晶各向异性和应力各向异性之间的竞争.在压应力的作用下,Terfenol-D单晶中的磁各向异性由立方向单轴转变.理论和实验结果的比较表明,存在一个临界压应力,使磁致伸缩效应达到极大值.该理论结果还解释了压应力使得Terfenol-D单晶材料难于磁化和磁致伸缩效应出现极大值的实验事实.理论计算不仅为研究这类问题提供了一个更准确的方法,而且其结果也有助于理解类似材料中的磁化过程.     

横向偏置场作用的非晶带巨磁阻抗效应理论

采用多畴结构模型,考虑非晶带具有180°畴壁的磁畴及其两面的偏置磁场方向的不同,根据自由能最小原理,Maxwell方程组及带阻尼项的Landau-Lifshitz方程,建立了非晶态合金带在横向偏置磁场作用下的巨磁阻抗效应的理论计算公式. 提出并采用四状态平均磁导率代替单畴模型获得的磁导率,得到了更符合实际的处于偏置场作用的阻抗随外磁场变化的理论结果. 关键词： 偏置磁场 四状态 多畴结构 巨磁阻抗     

辐射感生应力弛豫对Alm Ga1-m N/GaN HEMT电学特性的影响

基于电荷控制原理建立了辐射感生AlmGa1-mN势垒层应力弛豫对AlmGa1-mN/GaN HEMTs器件电学特性影响的解析模型,并进行了仿真分析.结果表明,对于高Al组分HEMTs器件,AlmGa1-mN势垒层中辐射感生的应力弛豫影响更为显著.辐射感生应力弛豫不但导致2DEG下降和阈值电压正向漂移,而且能够引起漏极输出电流的明显下降.辐射感生应力弛豫是赝配AlmGa1-mN/GaN HEMTs辐射损伤的重要机理之一.     

FeCuNbSiB非晶带材压应力阻抗研究

采用单辊法制备了宽4.5 mm、厚25μm的Fe73.5Cu1Nb3Si13.5B9非晶带材,并进行热处理以消除带材的残余内应力,利用4294A型阻抗分析仪测试了非晶带材的应力阻抗效应.结果表明:当测试频率低于20 MHz时,FeCuNbSiB非晶带材的应力阻抗效应较弱,随着测试频率的升高,材料的应力阻抗效应出现了明显的增强;热处理后非晶带材的应力阻抗效应增强,且随着热处理温度的升高而增强.     

Fe中<100>{010}刃位错芯结构的各向异性修正

在位错晶格理论基础上,采用改进的Peierls-Nabarro方程研究了Fe中<100>{010}刃位错在各向异性近似下的芯结构和Peierls应力. 各向异性近似下的晶格离散效应、切变模量和能量因子的表达式都已确切给出. 在这三个各向异性因素中,晶格离散效应和能量因子可以使位错宽度变窄,切变模量可以使位错宽度变宽. 相比于各向同性近似,各向异性近似下的位错宽度变窄了近20%,并且各向异性近似下的位错宽度与数值计算的结果相一致. 更为重要的是,各向异性使位错的Peierls应力数值几乎加倍,数量级也由 变成了 ,而这些都会显著影响位错的运动机制. 因此,各向异性对于位错来说非常重要,在研究位错芯结构以及运动机制时需要考虑各向异性的影响.     

Giant magneto-impedance and stress-impedance effects of microwire composites for sensing applications

Composites consisting of glass-coated amorphous microwire Co_68.59Fe_4.84Si_12.41B_14.16 and 913 E-glass prepregs were designed and fabricated. The influences of tensile stress, annealing and number of composite layers on the giant magneto-impedance (GMI) and giant stress-impedance (GSI) effects in these composites were investigated systematically. It was found that the application of tensile stress along the microwire axis or an increase in the number of composite layers reduced the GMI effect and increased the circular anisotropy field, while the annealing treatment had a reverse effect. The value of matrix-wire interfacial stress calculated via the GMI profiles coincided with the value of the applied effective tensile stress to yield similar GMI profiles. Enhancement of the GSI effect was achieved in the composites relative to their single microwire inclusion. These findings are important for the development of functional microwire-based composites for magnetic- and stress-sensing applications. They also open up a new route for probing the interfacial stress in fibre-reinforced polymer (FRP) composites.     

Giant uniaxial stress-permeability effect on electrical parameters of heterotypic MnZn ferrite devices and electromagnetic effect

The effects of uniaxial stress on permeability and electrical parameters of heterotypic manganite zinc (MnZn) ferrite devices have been investigated. Giant stress-permeability, stress-capacitance and stress-impedance that are independent of skin effects have been simultaneously observed to exist in a wide range of frequency at room temperature. All the uniaxial stress effects enhance with increasing the permeability of the ferrite. The stress-inductance is same as the stress-impedance and reverse to the stress-capacitance in phase. The stress effects under uniaxial pulling force are analogical with those under uniaxial pressing force. A composite of electrostrain/stress-permeability has been fabricated. Its electromagnetic effects have been observed to be homologous with the stress effects and can also exist in wide range of frequency but display some maximums. Analysis shows that both stress and electromagnetic effects originate from the variation of the magnetic domain structure in the ferrites caused by applied mechanical stress.     

磁光效应的各向异性和非线性特性

应用经典电磁场理论和（间接）交换作用有效场概念，推导了顺磁性、铁磁性、反铁磁性和亚铁磁性介质中的磁光效应及其温度特性。理论分析表明，法拉第磁光效应具有各向异性特性；法拉第旋转不仅与顺磁性和铁磁性介质中的磁化强度Ｍ或反铁磁性和亚铁磁性介质中的次晶格磁化强度Ｍｉ的非线性项有关，而且还应与Ｍ或Ｍｉ的高次项有关。（间接）交换作用是导致磁光效应、磁光效应各向异性以及它们的复杂温度特性的重要原因。理论较为圆满     

漫射近似在测量生物组织光学性质中的适用范围

漫射近似理论经常被用来作为测量生物组织光学特性参数实验和方法的理论基础,但是漫射近似理论只是一种对辐射传输理论的近似结果,在一定条件下有其特定的适用范围.为了确定漫射近似理论在活体非侵入式无损测量要求下的适用范围,本文采用Monte Carlo模拟校验的方法,对漫射近似理论和Monte Carlo模拟计算的结果进行了比较,给出了基于单散射反照率a和各向异性因子g的漫射近似理论适用范围数值标准.这一标准为漫射理论的应用提供了参考依据.     

A comparison of two theories of acoustoelasticity

The presence of a plane stress field causes small changes in the phase velocities of orthogonally polarized SH waves. The (small) difference in phase velocities (birefringence) can be used for non-destructive stress measurement. However, material anisotropy can affect phase velocity to the same extent as stress.Two theories have been developed which account for the effect of both stress and anisotropy. The theory of Iwashimizu and Kubomura assumes isotropy in the third-order elastic moduli and anisotropy in second-order moduli. A different approach was taken by Okada, who assumed the existence of a matrix analogous to the index of the refraction matrix in optics.In this paper, we generalize the theory of Iwashimizu and Kubomura by retaining anisotropy in third-order moduli. We show how Okada's theory can be made to agree with this more general theory.We also compare the predictions of the various theories with birefringence data obtained from uniaxial tension tests on 2024-T351 aluminium specimens. Both the Okada theory and the theory of Iwashimizu and Kubomura gave good agreement with experiment.     

Defects in semiconductors observed by positron annihilation

The origin of the effect of defects on positron annihilation in semiconductors has been studied. The electron-positron momentum densities in elemental semiconductors (Si and Ge), III-V compound semiconductors (GaAs, InP and GaSb), diamond and the proton irradiated Si were investigated by a full-scale use of the two-dimensional angular correlation of positron annihilation radiations (2D-ACAR). The obtained results showed, as a whole, good agreement with the electron momentum distribution of the fully occupied Jones zone with a small exception for the fact that the low density channels are running along the three principal axes. This anisotropy was strong in elemental semiconductors, while it was weakened in compound semiconductors. This anisotropy and its dependence on the material were found to be generally understood by the incorporation of crystal symmetry. The anisotropy will be discussed by group theory in conjunction to the effect of defects on positron annihilation.     

β-1,3,5,7-四硝基-1,3,5,7-四氮杂环辛烷热膨胀各向异性的量子化学计算与分子动力学模拟

在303～383 K和NPT系综和COMPASS力场下对β-1,3,5,7-四硝基-1,3,5,7-四氮杂环辛烷(HMX)超晶胞初始结构的分子动力学模拟,得到常压下各温度的晶体平衡构型并发现分子的堆积方式不变;通过线性拟合求算出线膨胀系数与实验值相近,体现出明显的各向异性. 采用密度泛函理论方法对沿各晶轴方向膨胀率变化(100%～105%)的HMX单胞模型进行了总能计算,得到的能量变化率体现各向异性并与热膨胀系数值关联,建立了关联方程. 由此阐 释了HMX晶体热膨胀各向异性的本质即特定的分子堆积模式.     

Effect of elastic anisotropy on the strain fields and band edges in stacked InAs/GaAs quantum dot nanostructures

The effect of elastic anisotropy on the strain fields and confinement potentials in InAs/GaAs quantum dot (QD) nanostructures was investigated for an isolated dot and a stacked multi-layer dots using finite element analysis and model solid theory. The assumption of isotropy tends to underestimate especially hydrostatic strain that is known to modify confinement potentials in conduction band. Consideration of anisotropy results in a wider band gap and shallower potential well as compared with the isotropic model. Since the band gap and potential well depth would be related to opto-electronic properties of quantum dot systems via quantum mechanical effects, it is suggested that consideration of elastic anisotropy in the calculation of strains and band structures is necessary for the design of QD-based opto-electronic devices.     

Beweglichkeitsanisotropie und Relaxation warmer Elektronen inn-Typ Germanium

The nonohmic part of the electric conductivity ofn-type germanium in a weak electric field depends on the field direction in the crystal. Measurements were made both with d.c. and microwave fields at lattice temperatures between 85 and 273° K. The anisotropy decreases with increasing field frequency and temperature. The data show that the effect of the effective mass anisotropy is enhanced by intervalley scattering. From the measured frequency dependence of the conductivity anisotropy the intervalley relaxation time is calculated and compared with results obtained from the acoustoelectric effect. In 〈001〉-direction where all 〈111〉-valleys of the conduction band are equally populated, the conductivity between 200 and 273° K is in accordance with theoretical results obtained byAdawi for an isotropic model; at lower temperature there are deviations even if ionized impurity scattering is included in the theory. The energy relaxation time is calculated from the measured frequency dependence of the 〈001〉-conductivity and compared with previous results.     

Szintillationsanisotropie von Anthrazenkristallen bei Beschuß mit α-Teilchen im Energiebereich 1–3 MeV

Anthracene crystals have been bombarded by α-particles of variable energy. The total luminescence and the scintillation anisotropy are measured as a function of α-particle energy. In the energy range 1–9 MeV the scintillation anisotropy is found to be an almost linear function of α-energy. The results are compared with those obtained from Kienzles theory of anisotropy and Voltz' theory of specific luminescence. It is shown that the experimental results cannot be explained by assuming only the quenching parameter to be anisotropic.